FCH029N65S3-F155 [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V , 75 A, 29 mΩ, TO-247;
| 型号： | FCH029N65S3-F155 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V , 75 A, 29 mΩ, TO-247 |
| 文件： | 总10页 (文件大小：363K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – Power,
N-Channel, SUPERFET) III,
Easy Drive
650 V, 75 A, 29 mW
FCH029N65S3
Description
www.onsemi.com
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET
Easy drive series helps manage EMI issues and allows for easier
design implementation.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
29 mW @ 10 V
75 A
D
Features
• 700 V @ T = 150°C
J
G
• Typ. R
= 23.7 mW
DS(on)
• Ultra Low Gate Charge (Typ. Q = 201 nC)
g
• Low Effective Output Capacitance (Typ. C
= 1615 pF)
S
oss(eff.)
POWER MOSFET
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
• UPS / Solar
G
D
S
TO−247−3LD
CASE 340CX
MARKING DIAGRAM
$Y&Z&3&K
FCH
029N65S3
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
FCH029N65S3
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
June, 2020 − Rev. 0
FCH029N65S3/D
FCH029N65S3
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
− DC
30
V
− AC (f > 1 Hz)
30
I
D
Drain Current
− Continuous (T = 25°C)
75
A
C
− Continuous (T = 100°C)
50.8
200
C
I
Drain Current
− Pulsed (Note 1)
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
503
AS
AS
I
11.5
4.63
100
E
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
20
P
(T = 25°C)
463
W
W/°C
°C
D
C
− Derate Above 25°C
3.7
T , T
Operating and Storage Temperature Range
−55 to +150
300
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. I = 11.5 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 37.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.27
40
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
q
JC
JA
R
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
N/A
Quantity
FCH029N65S3−F155
FCH029N65S3
TO−247 G03
Tube
N/A
30 Units
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
−
−
−
−
−
−
V
V
V
V
I
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
= 0 V, I = 1 mA, T = 150_C
GS
D
J
DBV
/ DT
Breakdown Voltage Temperature
Coefficient
= 1 mA, Referenced to 25_C
0.72
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650 V, V = 0 V
−
−
−
−
6.2
−
1
mA
DSS
GS
= 520 V, T = 125_C
−
C
I
Gate to Body Leakage Current
=
30 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 7.0 mA
2.5
−
−
4.5
29
−
V
mW
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 37.5 A
23.7
48
D
g
FS
= 20 V, I = 37.5 A
−
D
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2
FCH029N65S3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
6340
166
1615
287
201
46
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V = 0 V
GS
oss(eff.)
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
Q
= 400 V, I = 37.5 A, V = 10 V
D GS
g(tot)
(Note 4)
Q
gs
gd
Q
81
ESR
f = 1 MHz
0.85
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
V
= 400 V, I = 37.5 A,
−
−
−
−
35
49
−
−
−
−
ns
ns
ns
ns
d(on)
DD
GS
D
= 10 V, R = 2 W
g
t
r
(Note 4)
t
120
29.5
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
−
−
−
−
−
−
−
75
200
1.2
−
A
A
S
I
SM
V
SD
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 37.5 A
−
V
GS
SD
t
rr
= 400 V, I = 37.5 A,
516
12.2
ns
mC
DD
SD
dI /dt = 100 A/ms
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
www.onsemi.com
3
FCH029N65S3
TYPICAL CHARACTERISTICS
200
100
200
8 V
V
GS
= 10 V
V
= 0 V
GS
100
6.5 V
6.0 V
250 ms Pulse Test
5.5 V
T = 25°C
J
10
7.0 V
10
1
T = 150°C
J
1
T
= 25°C
C
250 ms Pulse Test
T = −55°C
J
0.1
0.2
1
10
20
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.05
0.04
0.03
0.02
200
100
V
= 0 V
GS
250 ms Pulse Test
V
= 20 V
GS
10
V
= 10 V
GS
1
0.01
0
T = 150°C T = 25°C
T = −55°C
J
J
J
0.1
0
25
50
75
100
125
150
175
200
0
0.2
0.4
0.6
0.8
1.0
1.2
I , DRAIN CURRENT (A)
D
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
Current and Gate Voltage
1M
100K
10K
1K
10
8
V
DD
= 130 V
I
D
= 37.5 A
V
DD
= 400 V
C
ISS
6
C
C
OSS
100
10
4
V
C
= 0 V, f = 1 MHz
= C + C
GS
RSS
iss
gs
gd
(C = shorted)
ds
2
0
C
C
= C + C
1
oss
rss
ds gd
= C
gd
0.1
0.1
1
10
100
1000
0
50
100
150
200
250
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
FCH029N65S3
TYPICAL CHARACTERISTICS
1.2
1.1
1.0
3.0
V
I
= 0 V
= 10 mA
V
I
= 10 V
= 37.5 A
GS
GS
D
D
2.5
2.0
1.5
1.0
0.9
0.8
0.5
0
−75 −50 −25
0
25 50 75 100 125 150 175
−75 −50 −25
0
25
50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
300
100
80
60
40
30 ms
100 ms
Operation in this
area is limited
1 ms
10
1
by R
10 ms
DC
DS(on)
20
0
T
= 25°C
C
T = 150°C
J
Single Pulse
0.1
1
10
100
1000
25
50
75
100
125
150
V
DS
, DRAIN−SOURCE VOLTAGE (V)
T , CASE TEMPERATURE (°C)
C
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
50
40
30
20
10
0
0
130
260
390
520
650
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Eoss vs. Drain−to−Source Voltage
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5
FCH029N65S3
TYPICAL CHARACTERISTICS
2
1
Duty Cycle − Descending Order
0.5
0.2
0.1
0.05
0.1
0.02
P
DM
0.01
Z
q
= r(t) x R
q
JC
0.01
JC(t)
R
= 0.27°C/W
q
JC
t
Peak T = P
Duty Cycle, D = t /t
x Z
+ T
JC(t) C
1
q
J
DM
Single Pulse
t
2
1
2
0.001
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Response Curve
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6
FCH029N65S3
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
FCH029N65S3
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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