FCDN614 [ONSEMI]
1-Channel ESD Protector;
| 型号： | FCDN614 |
| 厂家： | 
ONSEMI |
| 描述： | 1-Channel ESD Protector |
| 文件： | 总4页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FCDN614-UBM
1-Channel ESD Protector
Functional Description
The FCDN614-UBM provides robust ESD protection for sensitive
parts that may be subjected to electrostatic discharge (ESD). The tiny
form factor and single wirebond requirement enables it to be used in
very confined spaces. The electrical ‘back-to-back Zener’
configuration also provides ESD protection in cases where nodes with
AC signals are present. This device is designed and characterized to
safely dissipate ESD strikes of at least 8 kV, according to the
MIL-STD-883 (Method 3015) specification for Human Body Model
(HBM) ESD.
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ELECTRICAL SCHEMATIC
Al (Aluminum on Underside)
Features
• Compact Die Protects from ESD Discharges
• Almost No Conduction at Signal Amplitudes Less than 4 V
• ESD Protection to over 8 kV Contact Discharge per MIL_STD_883
Bare Silicon on Underside
International ESD Standard
Applications
ORDERING INFORMATION
• LED Lighting
• Modules
• Interface Circuits
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NOTE: The diagram shows a typical application with an AuSn or Au back metal on the ESD die. The diagram also shows the
polarity convention for the ESD die.
Figure 1. Applications Drawing
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
June, 2012 − Rev. 4
FCDN614−UBM/D
FCDN614−UBM
I
Table 1. CURRENT/VOLTAGE GRAPH
Symbol
Description
I
CL+
I
Positive Clamping Current
Positive Clamping Voltage
CL+
V
CL+
I
Leakage Current at V
L2+
L2+
V
I
Voltage Condition: +10 V
I
L2+
L2+
V
CL−
V
L1−
I
L1+
Leakage Current at V
V
L1+
L1+
I
I
V
L1+
V V
L2+ CL+
L1−
V
L1+
Voltage Condition: +4 V
I
Negative Clamping Current
Negative Clamping Voltage
CL−
V
CL−
L1−
I
Leakage Current at V
L1−
CL−
V
L1−
Voltage Condition: −4 V
Figure 2. Current/Voltage Graph
Table 2. ORDERING INFORMATION
Ordering Part Number
Topside Metal
Al (Aluminum)
Backside Metal
Thickness
Shipping Method
FCDN614−UBM
Bare Silicon
4 mils
Wafer Form
SPECIFICATIONS
Table 3. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
Operating Temperature Range
Storage Temperature Range
−40 to +150
−65 to +150
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 4. STANDARD OPERATING CONDITIONS
Parameter
Rating
Units
Operating Temperature Range
−40 to +150
°C
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2
FCDN614−UBM
SPECIFICATIONS (Cont’d)
Table 5. ELECTRICAL CHARACTERISTICS (Note 1)
Symbol Parameter
Test Conditions
Min
Typ
Max
Units
I
Leakage Current
V = 4 V, 150°C (Note 2)
4.0
mA
mA
mA
LEAK
V = 4 V, 25°C (V
)
0.3 (I
)
)
L1
L1
V = +10 V, 25°C (V
)
0.5 (I
L2+
L2+
V
Signal Clamp Voltage
T = 25°C
V
kV
V
CL
A
Positive Polarity on Signal Node (V
)
at 10 mA (I
)
+10.5
+12.0
+15.0
−5.0
CL+
CL+
Negative Polarity on Signal Node (V
)
at −10 mA (I
)
−9.0
−7.0
CL−
CL−
V
ESD
ESD Protection − Withstand Voltage:
Human Body Model
(MIL−STD−883, Method 3015)
T = 25°C
A
(Note 2)
8
V
Clamping Voltage during Transient Events on
Signal Node
I
= 1 A, t = 8/20 ms
CL_ESD
PP P
Positive Transients
Negative Transients
(Note 2)
+22
−15
C
Input Capacitance
At 1 MHz, 30 mV osc.
Level, 0 VDC Bias
At 1 MHz, 30 mV osc.
Level, 3 VDC Bias
(Note 2)
4.7
3.0
pF
IN
1. Operating characteristics are over standard operating conditions unless otherwise specified.
2. This parameter is guaranteed by design and/or characterization.
MECHANICAL DETAILS
Table 6. MECHANICAL SPECIFICATIONS
Stepping Size:
240 mm x 240 mm
Parameter
Composition
Condition
Units
Silicon Wafer,
p+ Doped
Die Shape
Square
240
240
4
Length (Stepping Size)
Width (Stepping Size)
Thickness
mm
mm
mils
mm
Saw Street Widths (Space
between Devices on Wafer)
(Note 1)
70 (X−Direction)
70 (Y−Direction)
Top Pad Length
125
mm
mm
Top Pad Width
125
Top Pad Opening:
125 mm x 125 mm
Top Pad Composition
Back Metal (Underside)
Die (Stepping Size)
Passivation Opening
Active Size
Al (Aluminum)
Bare Silicon
240
70
mm
mm
mm
mm
Figure 3. Package Dimensions
160
5
Active to PA Opening
1. The saw street is defined as the passivation−free area between
devices.
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3
FCDN614−UBM
MECHANICAL DETAILS (Cont’d)
Passivation−Free
Saw Street: 70 mm
Stepping Size:
240 mm x 240 mm
Figure 4. Wafer Array
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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PUBLICATION ORDERING INFORMATION
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FCDN614−UBM/D
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