FCA76N60N [ONSEMI]
功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，76 A，36 mΩ，TO-3P;
| 型号： | FCA76N60N |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，76 A，36 mΩ，TO-3P 局域网 PC 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：1550K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2017 Sept
FCA76N60N
®
N 沟道 SupreMOS MOSFET
600 V, 76 A, 36 mΩ
特性
说明
SupreMOS® MOSFET 是飞兆半导体的下一代高压超级结（SJ）
技术，该技术采用区别于传统 SJ MOSFET 产品的深沟槽填充工
艺。这项先进技术和精密的工艺控制提供了最低的 Rsp on-
resistance （导 通 电 阻 规 格） ，卓 越 的 开 关 性 能 和 耐 用 性。
SupreMOS MOSFET 产品非常适合高频开关电源转换器应用，
如功率因数校正 (PFC)、服 务 器 / 电信电源、平板电视电源、ATX
电源及工业电源应用。
•
•
•
•
•
RDS(on) = 28 mΩ (Typ.) @VGS = 10 V, ID = 38 A
超低栅极电荷 （典型值 Qg = 218 nC)
低有效输出电容 （典型值 Coss(eff.)= 914 pF)
100% 经过雪崩测试
符合 RoHS 标准
应用
•
太阳能逆变器
•
AC-DC 电源
D
G
G
D
TO-3PN
S
S
MOSFET 最大额定值 TC = 25oC 除非另有说明。
FCA76N60N
600
符号
VDSS
VGSS
参数
单位
V
漏极－源极电压
栅极－源极电压
±30
V
- 连续 (TC = 25oC)
- 连续 (TC = 100oC)
- 脉冲
76
ID
A
漏极电流
48.1
IDM
EAS
IAR
228
A
mJ
A
漏极电流
（注 1）
（注 2）
（注 1）
（注 1）
（注 3）
8022
76
单脉冲雪崩能量
雪崩电流
EAR
5.40
mJ
重复雪崩能量
100
MOSFET dv/dt 耐用性
二极管恢复 dv/dt 峰值
dv/dt
PD
V/ns
12
(TC = 25oC)
- 超过 25oC 时降额
543
W
W/oC
oC
功耗
5.40
TJ, TSTG
TL
-55 to +150
300
工作和存储温度范围
oC
用于焊接的最大引脚温度，距离外壳 1/8”，持续 5 秒
热性能
FCA76N60N
符号
RθJC
参数
结至外壳热阻最大值
单位
0.23
40
oC/W
RθJA
结至环境热阻最大值
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©2010 飞兆半导体公司
1
FCA76N60N Rev. 1
封装标识与定购信息
器件编号
顶标
封装
包装方法
塑料管
卷尺寸
不适用
带宽
数量
FCA76N60N
FCA76N60N
TO-3PN
不适用
30 单元
电气特性 TC = 25oC 除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
BVDSS
I
I
D = 1 mA, VGS = 0 V,TJ = 25oC
600
-
-
-
-
V
漏极－源极击穿电压
ΔBVDSS
/ ΔTJ
击穿电压温度系数
0.73
V/oC
D = 1 mA，参考 25oC
V
DS = 480 V, VGS = 0 V
VDS = 480 V, TJ = 125oC
GS = ±30 V, VDS = 0 V
-
-
-
-
-
-
10
IDSS
IGSS
μA
零栅极电压漏极电流
100
V
±100
nA
栅极 - 体漏电流
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 38 A
VDS = 20 V, ID = 38 A
2.0
-
4.0
36.0
-
V
mΩ
S
栅极阈值电压
-
-
28.5
88
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
-
-
-
-
9310
370
3.1
12385
pF
pF
pF
pF
pF
nC
nC
输入电容
V
DS = 100 V, VGS = 0 V,
Coss
495
输出电容
f = 1 MHz
Crss
5.0
反向传输电容
输出电容
Coss
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 380 V, VGS = 0 V
196
914
218
39
-
Coss(eff.)
Qg(tot)
Qgs
-
285
-
有效输出电容
10V 的栅极电荷总量
栅极 - 源极栅极电荷
V
V
DS = 380 V, ID = 38 A,
GS = 10 V
Qgd
-
-
66
-
-
nC
栅极 - 漏极 “ 密勒 ” 电荷
等效串联电阻 (G-S)
（说明 4）
ESR
f = 1 MHz
1.0
Ω
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
34
24
78
58
ns
ns
ns
ns
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
VDD = 380 V, ID = 38 A,
VGS = 10 V, RG = 4.7 Ω
235
32
480
74
（说明 4）
漏极 - 源极二极管特性
IS
-
-
-
-
-
-
-
76
228
1.2
-
A
A
漏极 - 源极二极管最大正向连续电流
漏极 - 源极二极管最大正向脉冲电流
漏极 - 源极二极管正向电压
反向恢复时间
ISM
VSD
trr
VGS = 0 V, ISD = 38 A
-
V
613
16
ns
μC
V
GS = 0 V, ISD = 38 A,
dIF/dt = 100 A/μs
Qrr
-
反向恢复电荷
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. I = 25.3 A， R = 25 Ω，启动 T = 25°C。
AS
G
J
3. I ≤ 76 A， di/dt ≤ 200 A/μs， V ≤ 380 V，启动 T = 25°C。
SD
DD
J
4. 本质上独立于工作温度的典型特性。
www.onsemi.com
©2010 飞兆半导体公司
2
FCA76N60N Rev. 1
典型性能特征
图 1. 导通区域特性
图 2. 传输特性
1000
100
10
1000
VGS = 15.0 V
10.0 V
6.0 V
5.5 V
5.0 V
4.5 V
100
10
1
150oC
25oC
-55oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
1
0.1
1
10
20
2
4
6
8
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
图 3. 导通电阻变化与漏极电流和栅极电压
图4. 体二极管正向电压变化与源电流和温度
50
1000
45
40
100
10
1
150oC
25oC
VGS = 10V
35
VGS = 20V
30
*Notes:
1. VGS = 0V
*Notes: TC = 25oC
2. 250μs Pulse Test
25
0
50
100
150
200
250
300
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
图 5. 电容特性
图 6. 栅极电荷
100000
10
VDS = 120V
Ciss
10000
1000
8
6
4
2
0
VDS = 300V
Coss
VDS = 480V
100
*Notes:
1. VGS = 0V
2. f = 1MHz
10
C
C
C
= C + C (C = shorted)
gs gd ds
iss
Crss
= C + C
ds gd
oss
rss
= C
gd
*Notes: ID = 38A
160 200
1
0.1
1
10
100
600
0
40
80
120
240
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
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©2010 飞兆半导体公司
3
FCA76N60N Rev. 1
典型性能特征 （接上页）
图 7. 击穿电压变化与温度
图8. 导通电阻变化与温度
3.0
1.2
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
0.9
0.8
*Notes:
1. VGS = 10V
*Notes:
1. VGS = 0V
2. ID = 38A
2. ID = 1mA
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
图 9. 最大安全工作区
图10.最大漏极电流与壳体温度
500
80
30μs
100
100μs
1ms
60
40
20
0
10
10ms
Operation in This Area
DC
is Limited by R DS(on)
1
*Notes:
1. TC = 25oC
0.1
2. TJ = 150oC
3. Single Pulse
0.01
1
10
100
1000
25
50
75
100
125
150
o
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ C]
图 11. 瞬态热响应曲线
1
0.5
0.1
0.2
0.1
PDM
t1
t2
0.05
0.01
*Notes:
0.02
1. ZθJC(t) = 0.23oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
Single pulse
0.005
10-5
10-4
10-3
10-2
10-1
100
101
102
t1，矩形脉冲持续时间 [ 秒 ]
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©2010 飞兆半导体公司
4
FCA76N60N Rev. 1
I
= 常量
G
图 12. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图 13. 阻性开关测试电路与波形
VGS
图 14. 非箝位感性开关测试电路与波形
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©2010 飞兆半导体公司
5
FCA76N60N Rev. 1
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图 15. 二极管恢复 dv/dt 峰值测试电路与波形
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©2010 飞兆半导体公司
6
FCA76N60N Rev. 1
机械尺寸
图 16. TO3， 3 引脚、塑料， EIAJ SC-65
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不超出飞兆公司全球范围内的条款与条件，尤其指保修，保修涵盖飞
兆半导体的全部产品。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003
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©2010 飞兆半导体公司
7
FCA76N60N Rev. 1
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