FCA20N60-F109 [ONSEMI]
分立 MOSFET;
| 型号： | FCA20N60-F109 |
| 厂家： | 
ONSEMI |
| 描述： | 分立 MOSFET 局域网 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：1016K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FCA20N60
N-Channel SuperFET MOSFET
®
600 V, 20 A, 190 mΩ
Description
SuperFET® MOSFET is ON Semiconductor’s first genera-tion
of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
Features
•
•
•
•
•
650V @ TJ = 150°C
Typ. RDS(on) = 150 mΩ
Ultra Low Gate Charge (Typ. Qg = 75 nC )
Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )
100% Avalanche Tested
Applications
•
Solar Inverter
•
AC-DC Power Supply
D
G
G
D
TO-3PN
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
FCA20N60 /
FCA20N60-F109
Symbol
VDSS
VGSS
Parameter
Unit
Drain to Source Voltage
Gate-Soure voltage
600
±30
V
V
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pu ls ed
20
ID
D r a in C u r r e n t
A
12.5
60
IDM
Dr ain Cur rent
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
690
20
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
20.8
4.5
mJ
V/ns
W
W/oC
oC
(TC = 25oC)
- Derate Above 25oC
208
PD
Power Dissipation
1.67
-55 to +150
300
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
oC
Thermal Characteristics
FCA20N60 /
FCA20N60_F109
Symbol
Parameter
Unit
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.6
oC/W
41.7
Publication Order Number:
©2008 Semiconductor Components Industries, LLC.
October-2017,Rev. 3
FCA20N60/D
Package Marking and Ordering Information
Part Number
FCA20N60
Top Mark
FCA20N60
FCA20N60
Package
TO-3PN
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
30 units
FCA20N60-F109
Tube
N/A
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
I
D = 250 μA, VGS = 0 V, TJ = 25oC
ID = 250 μA, VGS = 0 V, TJ = 150oC
600
-
-
-
-
V
V
BVDSS
Drain to Source Breakdown Voltage
650
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, Referenced to 25oC
-
-
0.6
-
-
V/oC
Drain-Source Avalanche Breakdown
Voltage
BVDS
VGS = 0 V, ID = 20 A
DS = 600 V, VGS = 0 V
700
V
V
-
-
-
-
-
-
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 480 V, TC = 125oC
10
VGS = ±30 V, VDS = 0 V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 10 A
VDS = 40 V, ID = 10 A
3.0
-
5.0
0.19
-
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
0.15
17
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
2370
1280
95
3080
pF
pF
pF
pF
pF
nC
nC
nC
V
DS = 25 V, VGS = 0 V,
Coss
Crss
Coss
Coss(eff.)
Qg
Output Capacitance
1665
f = 1 MHz
Reverse Transfer Capacitance
Output Capacitance
-
85
-
VDS = 480 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 400 V, VGS = 0 V
65
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
165
75
98
18
-
VDS = 480 V, ID = 20 A,
V
Qgs
13.5
36
GS = 10 V
(Note 4)
Qgd
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
62
140
230
65
135
290
470
140
ns
ns
ns
ns
VDD = 300 V, ID = 20 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
20
60
1.4
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, ISD = 20 A
-
V
530
10.5
ns
μC
VGS = 0 V, ISD = 20 A,
dIF/dt = 100 A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2:
3:
I
I
= 10 A, V = 50 V, R = 25 Ω, starting T = 25°C.
DD G J
AS
SD
≤ 20 A, di/dt ≤ 200 A/μs, V ≤ BV
, starting T = 25°C.
J
DD
DSS
4: Essentially independent of operating temperature typical characteristics.
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2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
102
VGS
102
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101
150oC
Bottom : 5.5 V
101
25oC
-55oC
100
100
* Note
* Notes :
1. VDS = 40V
1. 250μs Pulse Test
o
2. 250μs Pulse Test
2. T = 25 C
C
2
4
6
8
10
10-1
100
101
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101
100
0.4
0.3
VGS = 10V
0.2
VGS = 20V
150oC
25oC
0.1
* Notes :
1. VGS = 0V
2. 250μs Pulse Test
o
* Note : T = 25 C
J
0.0
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10000
12
10
8
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 100V
VDS = 250V
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
Coss = Cds + Cgd
Crss = Cgd
VDS = 400V
Coss
6
* Notes :
1. VGS = 0 V
C
iss
2. f = 1 MHz
4
Crss
2
* Note : I = 20A
D
0
10-1
100
101
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
* Notes :
0.9
0.8
1. VGS = 0 V
* Notes :
2. I = 250 μA
D
1. V = 10 V
0.5
GS
2. I = 20 A
D
0.0
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
25
Operation in This Area
102
is Limited by R DS(on)
20
15
10
5
100 us
101
1 ms
10 ms
DC
100
* Notes :
1. T = 25 o
C
10-1
10-2
C
2. T = 150 o
C
J
3. Single Pulse
0
100
101
102
103
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
100
D=0.5
* N otes
:
0.2
o
10-1
1. Zθ JC(t) = 0.6 C /W M ax.
2. D uty Factor, D =t1/t2
0.1
3. TJM - TC
= PD M * Zθ JC(t)
0.05
PDM
0.02
0.01
t1
t2
10-2
single pulse
10-5
10-4
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
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4
IG = const.
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
相关型号：
FCA20N60S_F109
Power Field-Effect Transistor, 20A I(D), 600V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
FAIRCHILD
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