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FAN7888MX [ONSEMI]

225V，可兼容 3.3/5V 输入逻辑，0.65/0.35A 汲/源电流，3 相半桥门极驱动集成电路;
FAN7888MX
型号： FAN7888MX
厂家： ONSEMI    ONSEMI
描述：

225V，可兼容 3.3/5V 输入逻辑，0.65/0.35A 汲/源电流，3 相半桥门极驱动集成电路

PC 驱动 光电二极管 接口集成电路
文件： 总15页 (文件大小：418K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
DATA SHEET  
www.onsemi.cn  
3 Ԫᩅჯ᧥ᥡ╁҈ IC  
FAN7888  
SOIC−20, 300 mils  
CASE 751BJ−01  
ᛄ៮  
FAN7888ꢀꢀꢁꢁꢂꢂꢃꢃꢄꢅꢆꢇꢄꢀIC，ᚎᙱ✈ꢅ▨ꢆ、▨  
᫯ꢇꢄMOSFET
٬
 IGBT，࿅ļꢈꢆ▨᪎ +200 V。  
onsemi Ŕ▨ꢈꢆ૤◦
٬͑
ᰁ
ࡊ
ૐὨℴᑠᤏ
׏
Åƽᚑ▨ֿꢇꢄ  
ࡈ
ई▨ dv/dt 
ࡊ
ૐ▏੣⛻ԃൺ࿅ļ。  
MARKING DIAGRAM  
̨᪫Ŕꢈၓᨼᕂꢈᢿş▨ֿꢅꢆꢇꢄ
ࡈ
ई V = 15 Vꢀ៖
׏
ૠ  
BS  
$Y&Z&2&K  
FAN7888  
EBIKE  
ַ▨᪎ V = −9.8 V (͘५Ȝ) ­⌖ᵃဘ࿅ļ。  
S
ᄳꢀV
ꢀ٬
 V ꢀ෯ꢅᓧൺ⃘Ȝꢈꢆ៖，ᴀꢆ₽ῑ (UVLO) ꢈᢿ  
DD  
BS  
׏
ℂᵂֱ⛿ᜥⅬ。  
ᩣϚꢇꢄ
ࡈ
Ŕᒩꢈἡꢀ/ ∬ꢈἡ͘५ȜϦЋꢇꢀ350 mA/650 mA，  
᫒✈ꢅꢈᤚꢇꢄ
ߋ
যŔꢂLjꢃꢄၴ✈。  
$Y  
&Z  
&2  
&K  
= Logo  
= Assembly Plant Code  
= 2−Digit Date Code  
= 2−Digits Lot Run Traceability Code  
⑙ሇ  
•ꢈ಺ꢉ࿅ļꢂꢃ὎ꢄꢈꢆ᪎А +200 V  
•ꢈᐠᣩꢂꢃŔᒩꢈἡ / ∬ꢈἡꢇꢄ்ѻꢇ 350 mA/650 mA (͘५Ȝ)  
•ꢈ3 ꢃꢄჯꢅꢆꢇꢄ
ࡈ
 
FAN7888 = Specific Device Code  
EBIKE  
rd  
= 3 Line Marking  
•ꢈෙꢅ V = 15 V ៖Ŕǁ
ח
Āᩣ，̡ᚈŔ៯ V ᘦဥᑉีೃ −9.8 V  
BS  
S
•ꢈԙᰝŔᣠଇĀᚍზ᪯៖⃄：50 ns  
ORDERING INFORMATION  
•ꢈ͜ꢉ 3.3 V
٬
 5 V ᩣͅꢊꢋ  
•ꢈᐠᣩ  
See detailed ordering and shipping information on page 13 of  
this data sheet.  
ꢂꢃꢌͥꢍꢎ 270 ns ͘५ꢏԚ៖⃄Ŕꢐꢂꢑℂꢈᢿ  
•ꢈͥꢍ͑ᰁ dv/dt 
ࡊ
ૐὨℴꢈᢿ  
•ꢈᐠᣩꢂꢃͥꢍ NVLO ѿ்  
• This Device is Pb−Free, Halide Free and is RoHS Compliant  
ၴ✈  
•ꢈꢈꢒꢓŔꢈᤚၴ✈ (ꢈꢄ಺ꢔꢕ、ꢈꢄ࿅͗)  
•ꢈꢂLjꢈᤚָꢖꢇꢄ
ࡈ
 
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
December, 2022 − Rev. 4  
FAN7888CN/D  
FAN7888  
͘५ၴ✈ꢀᢿ  
+15 V  
Up to 200 V  
1
2
VB1 20  
HIN1  
LIN1  
HIN2  
LIN2  
HIN3  
LIN3  
LO3  
VS3  
19  
HO1  
3−Phase
VS1  
VS1  
3
4
5
6
7
8
9
18  
Q1  
Q3  
Q5  
BLDC Motor  
Controller  
LO1 17  
VB2 16  
Q1  
Q3  
IU  
VS1  
Q5  
U
15  
14  
13  
HO2  
VS2  
3−Phase Inverter  
IV  
VS2  
Q4  
Q6  
Q2  
VS2  
V
W
LO2  
VDD  
IW  
VS3  
HO3  
12  
11  
Q4  
Q6  
Q2  
10 VB3  
GND  
VS3  
ࣞ
 1. ⛹LjៀЗDŽἡ (BLDC) ꢀ҈ᤚ╁҈
ࡈ
Ŕၴ✈  
www.onsemi.cn  
2
 
FAN7888  
ͥ᮸ᨦ
ࣞ
 
VB1  
UVLO  
HO1  
R R  
Q
NOISE  
CANCELLER  
UHIN  
S
HIN1  
HIN2  
HIN3  
LIN1  
LIN2  
LIN3  
VS1  
VDD  
VDD_UVLO  
UVLO  
SCHMITT  
TRIGGER INPUT  
LO1  
ULIN  
VDD  
DELAY  
GND  
U Phase Driver  
SHOOT−THOUGH  
PREVENTION  
VB2  
HO2  
VS2  
VDD  
VHIN  
VLIN  
V Phase Driver  
W Phase Driver  
LO2  
CONTROL LOGIC  
VB3  
HO3  
VS3  
VDD  
WHIN  
WLIN  
LO3  
ࣞ
 2. ѿ்ᨦ
ࣞ
 
www.onsemi.cn  
3
FAN7888  
ჵ௪࿣ภ  
HIN1  
LIN1  
HIN2  
LIN2  
HIN3  
LIN3  
LO3  
VS3  
1
2
20 VB1  
19 HO1  
18 VS1  
3
LO1  
VB2  
4
17  
16  
15  
5
HO2  
6
7
14 VS2  
LO2  
VDD  
8
13  
12  
11  
HO3  
VB3  
9
GND  
10  
ࣞ
 3. ჵ௪࿣ภ (⍆ᒖ
ࣞ
)  
ჵ௪ᛄ៮  
ჵ௪
ח
 
1
׭
Ӏ  
HIN1  
LIN1  
HIN2  
LIN2  
HIN3  
LIN3  
LO3  
ᛄ៮  
ꢀꢁꢂꢃ 1 ꢄꢀꢁꢅꢆꢇꢈꢂ 1  
ꢃꢁꢂꢃ 1 ꢄꢀꢁꢅꢆꢇꢈꢂ 1  
ꢀꢁꢂꢃ 2 ꢄꢀꢁꢅꢆꢇꢈꢂ 2  
ꢃꢁꢂꢃ 2 ꢄꢀꢁꢅꢆꢇꢈꢂ 2  
ꢀꢁꢂꢃ 3 ꢄꢀꢁꢅꢆꢇꢈꢂ 3  
ꢃꢁꢂꢃ 3 ꢄꢀꢁꢅꢆꢇꢈꢂ 3  
ꢃꢁꢂꢃꢄꢀꢁ 3 ꢈꢄ  
2
3
4
5
6
7
8
V
ꢀꢁꢄꢀꢁ 3 ꢅꢉꢀꢊꢋꢅꢌꢊꢆ  
ꢀꢁꢄꢀꢁ 3 ꢅꢂꢃꢄꢀꢈꢄ  
ꢀꢁꢄꢀꢁ 3 ꢅꢉꢀꢊꢋꢊꢆ  
ꢍꢇ  
S3  
9
HO3  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
V
B3  
GND  
V
DD  
ꢆꢇꢅꢈꢎꢏꢃꢁꢂꢃꢄꢀꢁꢅꢊꢋꢊꢆ  
ꢃꢁꢂꢃꢄꢀꢁ 2 ꢅꢈꢄ  
LO2  
V
S2  
ꢀꢁꢄꢀꢁ 2 ꢉꢀꢊꢋꢅꢌꢊꢆ  
ꢀꢁꢄꢀꢁ 2 ꢂꢃꢄꢀꢁꢈꢄ  
ꢀꢁꢄꢀꢁ 2 ꢅꢉꢀꢊꢋꢊꢆ  
ꢃꢁꢂꢃꢄꢀꢁ 1 ꢈꢄ  
HO2  
V
B2  
LO1  
V
S1  
ꢀꢁꢄꢀꢁ 1 ꢉꢀꢊꢋꢅꢌꢊꢆ  
ꢀꢁꢄꢀꢁ 1 ꢂꢃꢄꢀꢁꢈꢄ  
ꢀꢁꢄꢀꢁ 1 ꢅꢉꢀꢊꢋꢊꢆ  
HO1  
V
B1  
www.onsemi.cn  
4
FAN7888  
ভෙᣠଇ⍭ൺȜ (ꢐꢑꢉꢒꢓꢔ，T = 25°C)  
A
׶
ח
 
֢ᝐ  
ᣠ෯Ȝ  
−0.3  
ᣠଇȜ  
Եĭ  
V
VB  
V
V
ꢀꢁꢉꢀꢊꢋꢊꢆ  
225.0  
B1,2,3  
V
S
ꢀꢁꢉꢀꢊꢋꢅꢌꢊꢆ  
V
− 25  
V
V
+ 0.3  
V
S1,2,3  
B1,2,3  
S1,2,3  
B1,2,3  
B1,2,3  
V
V
ꢀꢁꢉꢀꢈꢄꢊꢆ  
ꢃꢁꢈꢊൺꢆꢇꢋꢊꢆ  
ꢃꢁꢈꢄꢊꢆ  
V
− 0.3  
+ 0.3  
V
HO1,2,3  
V
−0.3  
25.0  
V
DD  
LO1,2,3  
−0.3  
−0.3  
−
V
V
+ 0.3  
V
DD  
DD  
V
IN  
ꢆꢇꢈꢂꢊꢆ (HIN1,2,3 ꢈ LIN1,2,3)  
ꢋᚈꢅꢅꢌꢊꢆᨼᕂ᫯╧  
ꢌ૧ (Ỉዯ 1) (Ỉዯ 2) (Ỉዯ 3)  
ণೃ▏ꢍ⋍ℋ  
+ 0.3  
V
dV /dt  
S
50  
V/ns  
W
P
D
−
1.47  
85  
q
−
°C/W  
°C  
°C  
JA  
T
J
ণꢕ  
−
+150  
+150  
T
STG  
സꢎꢕႆ  
−55  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
(ꢏ૓ᚡᝧ)  
ꢐ᥼ꢊꢆᡕ᪗ᣠଇ⍭ൺꢐጸꢑꢒꢄꢅꢐීꢓ，ꢁꢔꢕ்ꢖᔿꢗ。ꢐ᥼ᡕ᪗ꢘꢙ᪩ꢚ℠ꢐ，෦ꢑẵꢛᚑꢁꢔꢌ்，ꢕ்ꢖොೄꢁꢔᔿꢗ，ᅑꢜ  
ꢕ∰ሇ。  
1. ൩᎕ꢝ 76.2 x 114.3 x 1.6 mm PCB ᥟ (FR−4 ▏ḇ▛♣ᤰ᝹)。  
2. ꢏ૓ꢞꢟ᧧ꢠ：  
JESD51−2: ꢖꢗꢊꢘ⋍ꢙꢚꢛẵ▏ꢍꢜꢔ − ꢝꢞꢟꢠ  
JESD51−3: ꢡꢡጸꢢꢣ᎕ꢤ᎕ꢅꢃꢏꢥො⋍ꢦꢧꢙꢚᥟ  
3. ꢢꢘꢙꢨꢣꢟꢩꢤꢪᡕ᪗ PD  
。
ᖈภ࿅ļ᥁Ö  
׶
ח
 
֢ᝐ  
ᣠ෯Ȝ  
ᣠଇȜ  
V + 20  
S1,2,3  
Եĭ  
V
V
V
ꢀꢁꢉꢀꢊꢋꢊꢆ  
V
+ 10  
B1,2,3  
S1,2,3  
ꢀꢁꢉꢀꢊꢋꢅꢌꢊꢆ  
ꢊꢋꢊꢆ  
6 − V  
200  
V
S1,2,3  
DD  
V
10  
20  
V
DD  
HO1,2,3  
V
ꢀꢁꢈꢄꢊꢆ  
ꢃꢁꢈꢄꢊꢆ  
V
S1,2,3  
V
B1,2,3  
V
V
GND  
GND  
−40  
V
V
V
LO1,2,3  
DD  
V
ꢆꢇꢈꢂꢊꢆ (HIN1,2,3 ꢈ LIN1,2,3)  
▏ꢍꢕႆ  
V
IN  
DD  
T
+125  
°C  
A
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
(ꢏ૓ᚡᝧ)  
ꢀꢥꢫꢬꢭꢦීꢓጸꢮꢑꢎꢒꢊꢆꢯ，ꢤꢛᚑ்ꢰꢱꢲꢳꢴ。ꢵꢯꢶꢢꢫꢬꢭꢦීꢓጸꢮꢑꢷൺීꢓꢞꢸꢅꢊꢆꢟꢳꢴ，ꢕ்ꢖᅑꢜꢁꢔꢅ  
ꢕ∰ሇ。  
www.onsemi.cn  
5
 
FAN7888  
ꢀᷴ⑙ሇ (V  
(V , V  
) = 15.0 V, T = 25°C, ꢹꢺꢧꢸꢓꢔVIN ꢈ IIN ꢏꢧꢞ GND ꢦꢨꢩꢠ。VO ꢈ IO ꢏꢧꢞ GND ꢈ VS1,2,3  
BIAS  
DD BS1,2,3 A  
ꢦꢨꢩꢠ，ꢻꢼꢥꢪꢝꢅꢈꢄ LO1,2,3 ꢈ HO1,2,3)  
׶
ח
 
⑙ሇ  
᥁Ö  
ᣠ෯Ȝ  
͘५Ȝ  
ᣠଇȜ  
Եĭ  
Įֿꢀ⁰᮸Ϧ  
I
V
ꢊꢋꢽꢾꢊꢠ  
V = 0 V ꢿ 5 V  
LIN1,2,3  
−
−
160  
500  
8.2  
7.8  
0.4  
350  
900  
9.0  
8.5  
−
mA  
mA  
V
QDD  
DD  
I
ꣀꢫꣁꣂꢅ V ꢊꢋꢭꢦꢊꢠ  
f
= 20 kHz, RMS ꢐ  
PDD1,2,3  
DD  
LIN1,2,3  
V
V
DD  
V
DD  
V
DD  
ꢊꢋꣃꢆꢱꢬ꣄ꢐ  
ꢊꢋꣃꢆꣅꢬ꣄ꢐ  
ꢊꢋꣃꢆ꣆ൺ꣇▏  
V
DD  
V
DD  
V
DD  
= Sweep, V = 15 V  
7.2  
6.8  
−
DDUV+  
DDUV−  
DDHYS  
BS  
V
= Sweep, V = 15 V  
V
BS  
V
= Sweep, V = 15 V  
V
BS  
಺ꢀꢀ⁰᮸Ϧ  
ꣀꢫꣁꣂꢅ V ꢽꢾꢊꢠ  
I
V
= 0 V ꢿ 5 V  
−
−
50  
400  
8.2  
7.8  
0.4  
−
120  
800  
9.0  
8.5  
−
mA  
mA  
V
QBS1,2,3  
BS  
HIN1,2,3  
I
ꣀꢫꣁꣂꢅ V ꢊꢋꢭꢦꢊꢠ  
f
= 20 kHz, RMS ꢐ  
PBS1,2,3  
BS  
HIN1,2,3  
V
V
V
BS  
V
BS  
V
BS  
ꢊꢋꣃꢆꢱꢬ꣄ꢐ  
ꢊꢋꣃꢆꣅꢬ꣄ꢐ  
ꢊꢋꣃꢆ꣆ൺ꣇▏  
V
V
V
V
= 15 V, V = Sweep  
7.2  
6.8  
−
BSUV+  
BSUV−  
BSHYS  
DD  
BS  
= 15 V, V = Sweep  
V
DD  
BS  
V
= 15 V, V = Sweep  
V
DD  
BS  
I
LK  
ꢅꢌꢊꢋꢅ꣈ꢊꢠ  
᧥ᥡ╁҈
ࡈ
ᩣϚ᮸Ϧ  
= V = 200 V  
S1,2,3  
−
10  
mA  
B1,2,3  
V
ꢀꢊ꣉ꢈꢄꢊꢆ，V  
ꢃꢊ꣉ꢈꢄꢊꢆ，V  
−V  
I =20 mA  
−
−
−
1.0  
0.6  
−
V
V
OH  
BIAS  
O
O
V
I =20 mA  
O
−
OL  
O+  
O
I
ꢈꢄꢀ꣊ꢘ꣋ꢭꢊꢠ (Ỉዯ 4)  
V
O
V
O
= 0 V, V = 5 V, PW < 10 ms  
250  
500  
−
350  
650  
−9.8  
mA  
mA  
V
IN  
I
O−  
ꢃꢊ꣉ꢈꢄ꣊ꢘ꣋ꢭꢊꢠ (Ỉዯ 4)  
= 15 V, V = 0 V, PW < 10 ms  
−
IN  
V
IN ꢮꢯꢰꢈꢝ H ꢯꢋᚈꢅꣅꢬ V ꣌꣍ꢊꢆ  
−7.0  
S
O
S
ᬋᩡᩣͅ᮸Ϧ (HIN, LIN)  
V
ꢆꢇ ”1” ꢈꢂꢊꢆ  
2.5  
−
−
−
−
V
V
IH  
V
ꢆꢇ ”0” ꢈꢂꢊꢆ  
1.0  
50  
IL  
I
ꢆꢇ ”1” ꢈꢂꢅꢌꢊꢠ  
ꢆꢇ ”0” ꢈꢂꢅꢌꢊꢠ (Ỉዯ 4)  
ꢈꢂꢟ꣎ꢊℋ  
V
V
= 5 V  
= 0 V  
−
25  
−
mA  
mA  
kW  
IN+  
IN  
I
−
2.0  
300  
IN−  
IN  
R
100  
200  
IN  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
(ꢏ૓ᚡᝧ)  
ꢹꢺꢧꢏꢓꢔ，“ꢊ꣏꣐ሇ”ጸꢮꢑꢒꢄꢅ꣑ꢎꢒꢙꢚꢜꢔꢟꢅꢱꢲሇ்ꢏꢧ。ꢐ᥼ꢢꢤꢳꢜꢔꢟꢳꢴ，ꢱꢲሇ்ꢕ்ꢴ“ꢊ꣏꣐ሇ”ጸꢮꢑꢎ  
ꢒሇ்ꢏꢧꢤꢵೄ。  
4. ꢏꢧ꣒꣓꣔꣕꣖ꢶ  
҈ᇡꢀᷴ⑙ሇ (T = 25°C, V  
(V , V  
) = 15.0 V, V  
= GND, C  
= 1000 pF ꢐꢑꢉꢷꢓꢔ)  
A
BIAS  
DD  
BS1,2,3  
S1,2,3  
Load  
׶
ח
 
֢ᝐ  
᥁Ö  
ᣠ෯Ȝ  
͘५Ȝ  
130  
150  
50  
ᣠଇȜ  
220  
240  
120  
80  
Եĭ  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
t
ොꣁꢰ꣗꣘ꢯ  
ꢸ꣙ꢰ꣗꣘ꢯ  
ොꣁꢹꢺꢯꢶ  
ꢸ꣙ꢟ꣚ꢯꢶ  
ොꣁ꣘ꢯꢻ꣛ I t  
ꢸ꣙꣘ꢯꢻ꣛ I t  
꣜ꢼꢯꢶ  
V
V
= 0 V  
= 0 V  
−
−
ON  
S1,2,3  
t
OFF  
S1,2,3  
t
R
−
t
F
−
30  
MT1  
MT2  
DT  
−t  
I
I
−
−
50  
ON(H) OFF(L)  
−t  
−
−
50  
OFF(H) ON(L)  
100  
−
270  
−
440  
60  
MDT  
꣜ꢼꢯꢶꢻ꣛ I t  
−t  
I
DT1 DT2  
www.onsemi.cn  
6
 
FAN7888  
͘५⑙ሇ  
300  
250  
200  
150  
100  
250  
200  
150  
100  
50  
50  
0
0
−40 −20  
0
20  
40  
60  
80 100 120  
80 100 120  
80 100 120  
−40 −20  
0
20  
40  
60  
80 100 120  
80 100 120  
80 100 120  
Temperature (°C)  
Temperature (°C)  
ࣞ
 4. ො᫪Āᚍზ៖ vs. ꢁႆ  
ࣞ
 5. ͓ឍĀᚍზ៖ vs. ꢁႆ  
120  
100  
80  
100  
80  
60  
60  
40  
40  
20  
0
20  
0
−40 −20  
0
20  
40  
60  
−40 −20  
0
20  
40  
60  
Temperature (°C)  
Temperature (°C)  
ࣞ
 6. ො᫪⛺ԧ៖⃄ vs. ꢁႆ  
ࣞ
 7. ͓ឍ⛻ℝ៖⃄ vs. ꢁႆ  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
−40 −20  
0
20  
40  
60  
−40 −20  
0
20  
40  
60  
Temperature (°C)  
Temperature (°C)  
ࣞ
 8. ො᫪ზ៖ԙᰝ vs. ꢁႆ  
ࣞ
 9. ͓ឍზ៖ԙᰝ vs. ꢁႆ  
www.onsemi.cn  
7
FAN7888  
͘५⑙ሇ (꣝)  
500  
400  
300  
200  
100  
60  
50  
40  
30  
20  
10  
0
−40 −20  
0
20  
40  
60  
80 100 120  
−40 −20  
0
20  
40  
60  
80 100 120  
Temperature (°C)  
Temperature (°C)  
ࣞ
 10. ᵛԚ៖⃄ vs. ꢁႆ  
ࣞ
 11. ᵛԚ៖⃄ԙᰝ vs. ꢁႆ  
350  
300  
250  
200  
150  
100  
50  
120  
100  
80  
60  
40  
20  
0
0
−40 −20  
0
20  
40  
60  
80 100 120  
−40 −20  
0
20  
40  
60  
80 100 120  
Temperature (°C)  
Temperature (°C)  
ࣞ
 12. ∩ᇡ VDD ꢀ⁰ꢀἡ⛾ꢁႆŔ͓
ߋ
 
ࣞ
 13. ∩ᇡ VBS ꢀ⁰ꢀἡ⛾ꢁႆŔ͓
ߋ
 
1000  
800  
1000  
800  
600  
400  
200  
0
600  
400  
200  
0
−40 −20  
0
20  
40  
60  
80 100 120  
−40 −20  
0
20  
40  
60  
80 100 120  
Temperature (°C)  
Temperature (°C)  
ࣞ
 14. ࿅ļ VDD ꢀ⁰ꢀἡ⛾ꢁႆŔ͓
ߋ
 
ࣞ
 15. ࿅ļ VBS ꢀ⁰ꢀἡ⛾ꢁႆŔ͓
ߋ
 
www.onsemi.cn  
8
FAN7888  
͘५⑙ሇ (꣝)  
9.0  
8.5  
8.0  
9.0  
8.5  
8.0  
7.5  
7.0  
7.5  
7.0  
−40 −20  
0
20  
40  
60  
80 100 120  
−40 −20  
0
20  
40  
60  
80 100 120  
Temperature (°C)  
Temperature (°C)  
ࣞ
 16. VDD UVLO+ ⛾ꢁႆŔ͓
ߋ
 
ࣞ
 17. VDD UVLO− ⛾ꢁႆŔ͓
ߋ
 
9.0  
8.5  
8.0  
9.0  
8.5  
8.0  
7.5  
7.0  
7.5  
7.0  
−40 −20  
0
20  
40  
60  
80 100 120  
−40 −20  
0
20  
40  
60  
80 100 120  
Temperature (°C)  
Temperature (°C)  
ࣞ
 18. VBS UVLO+ ⛾ꢁႆŔ͓
ߋ
 
ࣞ
 19. VBS UVLO− ⛾ꢁႆŔ͓
ߋ
 
0.60  
0.45  
0.30  
0.15  
0.00  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
−40 −20  
0
20  
40  
60  
80 100 120  
−40 −20  
0
20  
40  
60  
80 100 120  
Temperature (°C)  
Temperature (°C)  
ࣞ
 20. ▨ĭᩣϚꢀի vs. ꢁႆ  
ࣞ
 21. ĮĭᩣϚꢀի vs. ꢁႆ  
www.onsemi.cn  
9
FAN7888  
͘५⑙ሇ (꣝)  
3.0  
3.0  
2.5  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
2.0  
1.5  
1.0  
0.5  
0.0  
−40 −20  
0
20  
40  
60  
80 100 120  
−40 −20  
0
20  
40  
60  
80 100 120  
Temperature (°C)  
Temperature (°C)  
ࣞ
 22. ᬋᩡ▨ᩣͅꢀի vs. ꢁႆ  
ࣞ
 23. ᬋᩡĮᩣͅꢀի vs. ꢁႆ  
50  
40  
30  
20  
10  
0
−7  
−8  
−9  
−10  
−11  
−12  
−40 −20  
0
20  
40  
60  
80 100 120  
−40 −20  
0
20  
40  
60  
80 100 120  
Temperature (°C)  
Temperature (°C)  
ࣞ
 24. ᬋᩡᩣͅ▨ȯਾꢀἡ vs. ꢁႆ  
ࣞ
 25. ̡ᚈŔ៯
ױ
 VS ꢀի⛾ꢁႆŔ͓
ߋ
 
500  
400  
300  
200  
100  
0
−40 −20  
0
20  
40  
60  
80 100 120  
Temperature (°C)  
ࣞ
 26. ᩣͅ⛻ᒩꢀℋ vs. ꢁႆ  
www.onsemi.cn  
10  
FAN7888  
ၴ✈ǁ቏  
ƽᒄѿ்  
HIN1,2,3/LIN1,2,3  
LIN1,2,3/HIN1,2,3  
ᴀիῑൺ (UVLO)  
ꢗ ꢊ ꢂ ꢃ Ŕ ▨ ֿ
٬
 Į ֿ ꢇ ꢄ 
ࡈ
 ꢌ ᣩ ᴀ ꢆ ῑ ൺ  
(UVLO)ꢀƽꢘꢈᢿ，்ꢙꢚꢛꢜꢝꢞꢈꢟꢈꢆ (V  
٬
಺ꢉꢈꢉꢈꢆ (V  
)
ꢀĮꢅᓧ  
DD  
)。ᄳ V
ꢀ٬
 V  
BS1,2,3  
DD  
BS1,2,3  
ൺŔ⃘Ȝꢈꢆ៖，UVLOꢀꢈᢿ்ꢙꢑℂᜥⅬ。UVLO  
ꢠ▏ℂᵂꢈꢟᨼᕂꢡꢢꢋŔꢣꢄ。  
Shoot−Through Prevent  
HO1,2,3/LO1,2,3  
LO1,2,3/HO1,2,3  
After DT  
៿᫪⍔ℂѿ்  
FAN7888ꢀꢤᣩꢥꢂꢑℂꢈᢿ，ꢝꢦ▨ֿ
٬Į
ֿꢦЖ  
ᩣͅ。ꢧꢨᚎᙱ✈ꢩℂᵂ▨ֿᩣ
Ϛ٬Į
ֿᩣϚ
׬
៖ꢪ  
ꢂ，ꢫ
٬
 28 ᐠꢬ
ࣞ
 27。  
ࣞ
 28. ៿᫪⍔ℂỂᅂ  
HIN1,2,3/LIN1,2,3  
ᚭļᛄ៮  
FAN7888 ꢀ⛰ꢭꢂLjꢃꢄꢅꢆꢇꢄ
ࡈ
，ͥꢍᣩ͘५  
270 nsŔꢏԚ៖⃄ꢀ，᫒✈ꢅꢂLjꢮЗꢐἡ (BLDC)ꢀꢈ  
ᤚꢇꢄ
ߋ
য，ꢫ
ࣞ
 1 ᐠꢬ。  
LIN1,2,3/HIN1,2,3  
ࣞ
 29ꢀꢯꢰf⛰ꢊꢂLj BLDCꢀꢈᤚꢇꢄ
ߋ
যꢱꢲ 120  
ꢳἡ
ࡈ
Ŕꢪ͓ꢴꢵ。◦ꢶӶꢷꢸ：ȧᚎ⛿ꢹŔ back  
EMFꢀꢷꢸꢀꢺꢸ，ꢻꢼၓꢽ✄ᣩꢾꢙŔꢿꣀ，
׊
ꣁꣂ  
ꢈἡꢀꣃꢳŔ 120 ꢈ꣄ꣀŔꣅꢸ，ꢪ͓ꢴꢵꢫᐠꢬ，  
꣆்‡⛿꣇ൺ꣈ꣅ。
ࣞ
ꢀ29ꢀ꣉५꣊꣋ꢈᢿŔ࿅ļꢷꢸ  
꣌ꢬ，ꢗ ꣍ꢡ 60 ꣀꢈ꣄ꣀ，Ϲ⛰ꢊ 60⋅ ꢼϦ "ᕂLj"  
Аꢌ⛰Lj，ꢫ
ࣞ
 29 ᐠꢬ。  
Shoot−Through Prevent  
HO1,2,3/LO1,2,3  
After DT  
LO1,2,3/HO1,2,3  
After DT  
ࣞ
 27. ៿᫪⍔ℂỂᅂ  
www.onsemi.cn  
11  
 
FAN7888  
−30  
0
30  
60  
90  
120  
150  
180  
210  
240  
270  
300  
330  
Elec °  
Input / Output  
Q5 (HIN3)  
Q1 (HIN1)  
Q3 (HIN2)  
Q5 (HIN3)  
HIN / HO1,2,3  
LIN / LO1,2,3  
Q6 (LIN2)  
Q2 (LIN3)  
Q4 (LIN1)  
Phase Current  
I
U
I
V
I
W
Phase Voltage  
V
S1  
Phase Back EMF  
V
V
S2  
S3  
Current Flow  
Direction  
U
V
W
U
V
W
U
V
W
U
V
W
U
V
W
U
V
W
ࣞ
 29. 120 ŧ  
რ͓៖⃄
ࣞ
 
50%  
50%  
HIN1,2,3  
/LIN1,2,3  
tON(H)  
tOFF(H)  
90%  
tR  
tF  
90%  
HO1,2,3  
10%  
10%  
MT1  
90%  
MT2  
90%  
tOFF(L)  
tON(L)  
LO1,2,3  
10%  
10%  
ࣞ
 30. რ͓៖⃄ൺ)  
www.onsemi.cn  
12  
FAN7888  
ᙲ៽ǁ቏  
†
᮸Ö০
ח
 
FAN7888MX  
෡᎕  
࿅ļꢁႆී
ࣔ
 
Shipping  
SOIC−20, 300 mils  
(Pb−Free, Halide Free)  
−40°C to +125°C  
1000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.cn  
13  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOIC−20, 300 mils  
CASE 751BJ−01  
ISSUE O  
DATE 19 DEC 2008  
SYMBOL  
MIN  
NOM  
MAX  
2.64  
0.30  
2.55  
0.51  
0.33  
13.00  
10.64  
7.60  
2.36  
2.49  
A
A1  
A2  
b
0.10  
2.05  
0.31  
0.41  
0.27  
c
0.20  
E1  
E
D
12.60  
10.01  
7.40  
12.80  
10.30  
7.50  
E
E1  
e
1.27 BSC  
h
0.25  
0.40  
0º  
0.75  
1.27  
8º  
0.81  
L
b
e
θ
5º  
15º  
θ1  
PIN#1 IDENTIFICATION  
TOP VIEW  
D
h
h
q1  
q
A2  
A
q1  
L
c
A1  
END VIEW  
SIDE VIEW  
Notes:  
(1) All dimensions are in millimeters. Angles in degrees.  
(2) Complies with JEDEC MS-013.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON34287E  
SOIC−20, 300 MILS  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
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