FAN23SV65AMPX [ONSEMI]

降压稳压器,同步,15 A;
FAN23SV65AMPX
型号: FAN23SV65AMPX
厂家: ONSEMI    ONSEMI
描述:

降压稳压器,同步,15 A

稳压器
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中文:  中文翻译
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FAN23SV65AMPX  
Buck Regulator,  
Synchronous, 15 A  
Description  
The FAN23SV65A is a highly efficient synchronous buck regulator.  
The regulator is capable of operating with an input range from 7 V to  
24 V and supporting up to 15 A continuous load currents. The device  
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can operate from a 5 V rail ( 10%) if V , P , and P are  
IN  
VIN  
VCC  
connected together to bypass the internal linear regulator.  
The FAN23SV65A utilizes ON Semiconductor’s constant ontime  
control architecture to provide excellent transient response and to  
maintain a relatively constant switching frequency. This device  
utilizes Pulse Frequency Modulation (PFM) mode to maximize  
lightload efficiency by reducing switching frequency when the  
inductor is operating in discontinuous conduction mode at light loads,  
while clamping the minimum frequency above the audible range with  
ultrasonic mode.  
PQFN34  
CASE 483AM  
Switching frequency and overcurrent protection can be  
programmed to provide a flexible solution for various applications.  
Output overvoltage, undervoltage, overcurrent, and thermal  
shutdown protections help prevent damage to the device during fault  
conditions. After thermal shutdown is activated, a hysteresis feature  
restarts the device when normal operating temperature is reached.  
MARKING DIAGRAM  
$Y&Z&3&K  
FAN23  
SV65A  
Features  
V Range: 7 V to 24 V Using Internal Linear Regulator for Bias  
IN  
V Range: 4.5 V to 5.5 V with V /P /P  
Connected to Bypass  
IN  
IN VIN VCC  
Internal Regulator  
$Y  
&Z  
&3  
&K  
= Logo  
= Assembly Plant Code  
= Numeric Date Code  
= Lot Code  
= Specific Device Code  
High Efficiency: Over to 96% Peak  
Continuous Output Current: 15 A  
Internal Linear Bias Regulator  
FAN23SV65A  
Accurate Enable Facilitates V UVLO Functionality  
IN  
PFM Mode for LightLoad Efficiency  
Excellent Line and Load Transient Response  
Precision Reference: 1% Over Temperature  
Output Voltage Range: 0.6 to 5.5 V  
Programmable Frequency: 200 kHz to 1 MHz  
Programmable SoftStart  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
Low Shutdown Current  
Adjustable Sourcing Current Limit  
Internal Boot Diode  
Thermal Shutdown  
Halogen and Lead Free, RoHS Compliant  
Applications  
Mainstream Notebooks  
Servers and Desktop Computers  
Game Consoles  
Telecommunications  
Storage  
Base Stations  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
June, 2018 Rev. 2  
FAN23SV65AMPX/D  
FAN23SV65AMPX  
ORDERING INFORMATION  
Part Number  
Operating  
Temperature Range  
Configuration  
PFM with Ultrasonic Mode  
Package  
Output Current (A)  
FAN23SV65AMPX  
40 to 125°C  
15  
34Lead,  
PQFN, 5.5 mm x 5.0 mm  
TYPICAL APPLICATION DIAGRAMS  
VIN = 19V  
VIN = 19 V  
R11  
10 ꢀ  
C10  
2.2 F  
C9  
0.1 F  
CIN  
0.1 F  
CIN  
4x10 F  
R7  
64.9 kꢀ  
PVCC  
VIN  
PVIN  
VCC  
EN  
Ext  
EN  
C3  
0.1 F  
R8  
VOUT = 1.2 V  
BOOT  
SW  
10 kꢀ  
FAN23SV65A  
IOUT = 0 15 A  
R7, R8 used for Accurate EN  
R7, R8 open for Ext EN  
L1  
0.56 H  
PGOOD  
ILIM  
SOFTSTART  
R2  
1.5 kꢀ  
C4  
0.1 F  
COUT  
8x47 F  
R5 1.47 kꢀ  
R3  
10 kꢀ  
C5  
100 pF  
C7  
15 nF  
FREQ  
FB  
R9  
54.9 kꢀ  
R6  
4.99 kꢀ  
R4  
10 kꢀ  
AGND  
PGND  
Figure 1. Typical Application with VIN = 19 V  
VIN = 5 V  
R11  
10 ꢀ  
C10  
2.2 F  
C9  
0.1 F  
CIN  
CIN  
0.1 F  
4x10 F  
PVCC  
VIN  
PVIN  
VCC  
EN  
Ext  
EN  
C3  
0.1 F  
VOUT = 1.2 V  
BOOT  
SW  
FAN23SV65A  
= 0 15 A  
IOUT  
L1  
0.56 H  
PGOOD  
ILIM  
SOFTSTART  
R2  
1.5 kꢀ  
C4  
0.1 F  
COUT  
8x47 F  
R5 1.47 kꢀ  
R3  
10 kꢀ  
C5  
100 pF  
C7  
15 nF  
FREQ  
FB  
R9  
54.9 kꢀ  
R6  
4.99 kꢀ  
R4  
10 kꢀ  
AGND  
PGND  
Figure 2. Typical Application with VIN = 5 V  
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2
 
FAN23SV65AMPX  
FUNCTIONAL BLOCK DIAGRAM  
VIN  
BOOT PVIN  
PVCC  
VCC  
Linear  
Regulator  
PVCC  
VCC  
VCC UVLO  
ENABLE  
1.26V/1.14V  
PVCC  
EN  
VCC  
VCC  
10mA  
Modulator  
HS Gate  
Driver  
SS  
FB  
FB  
Comparator  
VREF  
SW  
PFM  
Comparator  
FREQ  
Control  
Logic  
nd  
2
Level OVP  
x1.2  
x1.1  
x0.9  
Comparator  
PVCC  
1st Level OVP  
Comparator  
LS Gate  
Driver  
UnderVoltage  
Comparator  
VCC  
PGOOD  
Thermal  
Shutdown  
10mA  
Current Limit  
Comparator  
AGND  
ILIM  
PGND  
Figure 3. Block Diagram  
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3
FAN23SV65AMPX  
PIN CONFIGURATION  
5
5
7
6
4
2
1
3
4
6
8
9
8
3
2
7
1
9
PVIN 10  
PVIN 11  
34 NC  
33 NC  
NC  
34  
33  
10 PVIN  
PVIN  
(P2)  
11  
12  
13  
NC  
PVIN  
FREQ  
SS  
FREQ  
32  
31  
SW  
32  
31  
SW  
SW  
SW 13  
SS  
AGND  
(P1)  
SW  
(P3)  
SW 14  
SW 15  
SW 16  
SW 17  
PGOOD 30  
SW  
SW  
SW  
SW  
30 PGOOD  
14  
15  
EN  
29  
28  
27  
EN  
29  
28  
27  
16  
17  
NC  
FB  
NC  
FB  
21  
20  
19  
18  
18  
19  
20  
21  
22  
23  
24  
25  
26  
25  
24  
23  
22  
26  
Figure 4. Pin Assignment (Bottom View)  
Figure 5. Pin Assignment (Top View)  
Description  
PIN DEFINITIONS  
Name  
PVIN  
VIN  
Pad / Pin  
P2, 511  
1
Power input for the power stage  
Power input to the linear regulator; used in the modulator for input voltage feedforward  
Power output of the linear regulator; directly supplies power for the lowside gate driver  
and boot diode. Can be connected to VIN and PVIN for operation from 5 V rail  
PVCC  
25  
VCC  
PGND  
AGND  
SW  
26  
1821  
Power supply input for the controller  
Power ground for the lowside power MOSFET and for the lowside gate driver  
Analog ground for the analog portions of the IC and for substrate  
Switching node; junction between highand lowside MOSFETs  
P1, 4, 23  
P3, 2, 1217, 22  
3
BOOT  
Supply for highside MOSFET gate driver. A capacitor from BOOT to SW supplies the  
charge to turn on the Nchannel highside MOSFET. During the freewheeling interval  
(lowside MOSFET on), the highside capacitor is recharged by an internal diode  
connected to PVCC  
ILIM  
FB  
24  
27  
29  
31  
32  
Current limit. A resistor between ILIM and SW sets the current limit threshold  
Output voltage feedback to the modulator  
EN  
Enable input to the IC. Pin must be driven logic high to enable, or logic low to disable  
Softstart input to the modulator  
SS  
FREQ  
Ontime and frequency programming pin. Connect a resistor between FREQ and AGND  
to program ontime and switching frequency  
PGOOD  
NC  
30  
Power good; opendrain output indicating V  
is within set limits  
OUT  
28, 3334  
Leave pin open or connect to AGND  
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4
FAN23SV65AMPX  
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)  
A
Symbol  
Parameter  
Power Input  
Conditions  
Referenced to PGND  
Min.  
0.3  
0.3  
Max.  
30.0  
30.0  
Unit  
V
V
PVIN  
V
IN  
Modulator Input  
Boot Voltage  
Referenced to AGND  
V
V
BOOT  
Referenced to PVCC  
0.3  
0.3  
30.0  
33.0  
V
V
Referenced to PVCC, < 20 ns  
V
SW  
SW Voltage to GND  
Referenced to PGND, AGND  
1  
5  
30.0  
30.0  
V
V
Referenced to PGND, AGND < 20 ns  
Boot to SW Voltage  
Boot to PGND  
Referenced to SW  
0.3  
0.3  
6.0  
30  
V
V
V
V
BOOT  
Referenced to PGND  
Gate Drive Supply Input Referenced to PGND, AGND  
0.3  
0.3  
0.3  
0.3  
0.3  
0.3  
0.3  
0.3  
6.0  
6.0  
V
V
PVCC  
V
Controller Supply Input  
Current Limit Input  
Referenced to PGND, AGND  
Referenced to AGND  
VCC  
V
6.0  
V
ILIM  
V
Output Voltage Feedback Referenced to AGND  
6.0  
V
FB  
EN  
SS  
V
Enable Input  
Referenced to AGND  
6.0  
V
V
Soft Start Input  
Frequency Input  
Referenced to AGND  
6.0  
V
V
Referenced to AGND  
6.0  
V
FREQ  
V
Power Good Output  
Referenced to AGND  
6.0  
V
PGOOD  
ESD  
Electrostatic Discharge  
Human Body Model, JESD22A114  
Charged Device Model, JESD22C101  
1000  
2500  
+150  
+150  
V
V
T
J
Junction Temperature  
Storage Temperature  
°C  
°C  
T
STG  
55  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Conditions  
Referenced to PGND  
Referenced to AGND  
Min  
Max.  
Unit  
V
PVIN  
Power Input  
7
7
24  
24  
V
V
V
IN  
Modulator Input  
T
Junction Temperature  
Load Current  
40  
+125  
°C  
J
I
T = 25°C, No Airflow  
20  
A
V
LOAD  
A
VPVIN, VIN,  
PV , V , and Gate Drive Supply Input  
V
V
, V Connected for 5 V  
PVCC  
4.5  
5.5  
IN  
IN  
PVIN, IN  
V
Rail Operation and Referenced to  
PGND, AGND  
PVCC  
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
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5
FAN23SV65AMPX  
THERMAL CHARACTERISTICS  
(The thermal characteristics were evaluated on a 4layer pcb structure (1 oz/1 oz/1 oz/1 oz) measuring 7 cm x 7 cm).  
Symbol  
Parameter  
Typ.  
35  
Unit  
°C/W  
°C/W  
°C/W  
Thermal Resistance, JunctiontoAmbient  
JA  
Thermal Characterization Parameter, JunctiontoTop of Case  
Thermal Characterization Parameter, JunctiontoPCB  
2.7  
2.3  
JC  
JPCB  
ELECTRICAL CHARACTERISTICS (Unless otherwise noted; V = 12 V, V  
=1.2 V, and T = T = 40 to +125°C. (Note 2)  
OUT A J  
IN  
Symbol  
Parameter  
Condition  
Min.  
Typ.  
Max.  
Unit  
SUPPLY CURRENT  
I
Shutdown Current  
Quiescent Current  
EN = 0 V  
EN = 5 V, Not Switching  
EN =5 V, f = 500 kHz  
16  
A  
mA  
mA  
VIN,SD  
I
1.8  
VIN,Q  
IVIN,GateCharge Gate Charge Current  
22  
sw  
LINEAR REGULATOR  
V
Regulator Output Voltage  
Regulator Current Limit  
4.75  
60  
5.05  
5.25  
V
REG  
REG  
I
mA  
REFERENCE, FEEDBACK COMPARATOR  
V
FB Voltage Trip Point  
FB Pin Bias Current  
590  
596  
0
602  
100  
mV  
nA  
FB  
FB  
I
100  
MODULATOR  
t
OnTime Accuracy  
R
= 56.2 k,  
FREQ  
20  
20  
%
ON  
V
=10 V,  
IN  
t
=250 ns, No Load  
ON  
t
Minimum SW OffTime  
Minimum SW OnTime  
Minimum Duty Cycle  
320  
45  
374  
ns  
ns  
OFF,MIN  
t
ON,MIN  
D
FB = 1 V  
0
%
MIN  
f
Minimum Frequency Clamp  
18.2  
25.4  
32.7  
kHz  
MINF  
SOFTSTART  
I
SoftStart Current  
SS = 0.5 V  
SS < 0.6 V  
7
10  
13  
A  
%
SS  
t
SS OnTime Modulation  
25  
100  
ON,SSMOD  
VSSCLAMP,NOM Nominal SoftStart Voltage  
V
= 0.6 V  
400  
40  
mV  
FB  
Clamp  
VSSCLAMP,OVL  
SoftStart Voltage Clamp in  
Overload Condition  
V
=0.3 V,  
mV  
mV  
FB  
OC Condition  
PFM ZEROCROSSING DETECTION COMPARATOR  
V
OFF  
ZCD Offset Voltage  
T = T = 25°C  
A
6  
0
J
CURRENT LIMIT  
I
Valley Current Limit Accuracy  
T = T = 25°C,  
10  
1  
10  
1
%
LIM  
A
J
IVALLEY=18 A  
VILIM,OFFSET  
Comparator Offset  
mV  
K
ILIM  
I
SetPoint Scale Factor  
85  
LIM  
I
Temperature Coefficient  
4000  
ppm/°C  
LIMTC  
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6
FAN23SV65AMPX  
ELECTRICAL CHARACTERISTICS (Unless otherwise noted; V = 12 V, V  
=1.2 V, and T = T = 40 to +125°C. (Note 2)  
OUT A J  
IN  
Symbol  
ENABLE  
Parameter  
Condition  
Min.  
Typ.  
Max.  
Unit  
V
Rising Threshold  
1.11  
1.26  
122  
1.14  
4.5  
1.43  
V
mV  
V
TH+  
V
HYST  
Hysteresis  
V
Falling Threshold  
Enable Voltage Clamp  
Clamp Current  
1.00  
4.3  
1.28  
TH  
ENCLAMP  
V
I
IEN = 20 A  
V
24  
100  
76  
A  
nA  
A  
ENCLAMP  
I
Enable Pin Leakage  
Enable Pin Leakage  
EN = 1.2 V  
EN = 5 V  
ENLK  
ENLK  
I
UVLO  
V
ON  
V
CC  
Good Threshold Rising  
4.4  
V
V
HYS  
Hysteresis Voltage  
160  
mV  
FAULT PROTECTION  
V
PGOOD UV Trip Point  
PGOOD OV Trip Point  
Second OV Trip Point  
On FB Falling  
On FB Rising  
86  
89  
111  
122  
92  
115  
125  
125  
2.03  
1
%
%
UVP  
V
108  
118  
VOP1  
OVP2  
V
On FB Rising; LS = On  
%
R
PGOOD PullDown Resistance IPGOOD = 2 mA  
PGOOD SoftStart Delay  
PGOOD  
tPG,SSDELAY  
0.82  
1.42  
ms  
A  
I
PGOOD Leakage Current  
PG,LEAK  
THERMAL SHUTDOWN  
T
Thermal Shutdown Trip Point  
(Note 1)  
155  
15  
°C  
°C  
OFF  
T
HYS  
Hysteresis (Note 1)  
INTERNAL BOOTSTRAP DIODE  
V
Forward Voltage  
Reverse Leakage  
I = 10 mA  
0.6  
V
FBOOT  
F
I
R
V
R
= 24 V  
1000  
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
1. Guaranteed by design; not production tested.  
2. Device is 100% production tested at T = 25°C. Limits over that temperature are guaranteed by design.  
A
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7
 
FAN23SV65AMPX  
TYPICAL PERFORMANCE CHARACTERISTICS  
Tested using evaluation board circuit shown in Figure 1 with V = 19 V, V  
= 1.2 V, F = 500 kHz, T = 25°C, and no airflow;  
IN  
OUT  
sw  
A
unless otherwise specified.  
100  
90  
80  
70  
60  
50  
40  
30  
20  
100  
90  
80  
70  
60  
50  
19VIN_5VOUT_500KHZ_1.2UH  
12VIN_5VOUT_500KHZ_1.2UH  
12VIN_3.3VOUT_500KHZ_1.2UH  
12VIN_1.2VOUT_500KHZ_0.56UH  
12VIN_1.05VOUT_500KHZ_0.4UH  
19VIN_3.3VOUT_500KHZ_1.2UH  
19VIN_1.2VOUT_500KHZ_0.56UH  
19VIN_1.05VOUT_500KHZ_0.4UH  
40  
30  
20  
20  
10  
0.01  
0.1  
1
0.01  
0.1  
1
10  
20  
Load Current (A)  
Load Current (A)  
Figure 6. Efficiency vs. Load Current with VIN = 19 V  
and fSW = 500 kHz  
Figure 7. Efficiency vs. Load Current with VIN = 12 V  
and fSW = 500 kHz  
100  
90  
80  
70  
60  
100  
90  
80  
70  
60  
50  
50  
12VIN_1.2VOUT_300KHZ_0.72UH  
19VIN_1.2VOUT_300KHZ_0.72UH  
40  
40  
19VIN_1.2VOUT_500KHZ_0.56UH  
12VIN_1.2VOUT_500KHZ_0.56UH  
30  
30  
19VIN_1.2VOUT_1MHZ_0.3UH  
12VIN_1.2VOUT_1MHZ_0.3UH  
20  
20  
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
Load Current (A)  
Load Current (A)  
Figure 8. Efficiency vs. Load Current with  
Figure 9. Efficiency vs. Load Current with  
VIN = 12 V and VOUT = 1.2 V  
V
IN = 19 V and VOUT = 1.2 V  
100  
90  
80  
70  
60  
50  
100  
90  
80  
70  
60  
50  
12VIN_1.05VOUT_500KHZ_0.4UH  
12VIN_1.2VOUT_300KHZ_0.72UH  
12VIN_1.2VOUT_500KHZ_0.56UH  
12VIN_1.2VOUT_1MHZ_0.3UH  
12VIN_3.3VOUT_500KHZ_1.2UH  
12VIN_5VOUT_500KHZ_1.2UH  
19VIN_5VOUT_500KHZ_1.2UH  
19VIN_3.3VOUT_500KHZ_1.2UH  
19VIN_1.2VOUT_300KHZ_0.72UH  
19VIN_1.2VOUT_500KHZ_0.56UH  
19VIN_1.05VOUT_500KHZ_0.4UH  
19VIN_1.2VOUT_1MHZ_0.3UH  
0
5
10  
15  
20  
0
5
10  
15  
20  
Load Current (A)  
Load Current (A)  
Figure 10. Efficiency vs. Load Current with  
VIN = 19 V  
Figure 11. Efficiency vs. Load Current with  
VIN = 12 V  
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8
FAN23SV65AMPX  
TYPICAL PERFORMANCE CHARACTERISTICS (continued)  
Tested using evaluation board circuit shown in Figure 1 with V = 19 V, V  
= 1.2 V, F = 500 kHz, T = 25°C, and no airflow;  
IN  
OUT  
sw A  
unless otherwise specified.  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
80  
70  
60  
50  
40  
30  
20  
10  
0
19VIN_1.2VOUT_1MHz_0.3uH  
19VIN_1.2VOUT_500kHz_0.56uH  
19Vin_1.2Vout_300kHz_0.72uH  
12VIN_1.2VOUT_1MHz_0.3uH  
12VIN_1.2VOUT_500kHz_0.56uH  
12VIN_1.2VOUT_300kHz_0.72uH  
0
5
10  
15  
20  
0
5
10  
15  
20  
Load Current (A)  
Load Current (A)  
Figure 12. Case Temperature Rise vs. Load Current on  
4 Layer PCB, 1 oz Copper, 7 cm x 7 cm  
Figure 13. Case Temperature Rise vs. Load Current  
on 4 Layer PCB, 1 oz Copper, 7 cm x 7 cm  
1.22  
1.215  
1.21  
1.22  
1.215  
1.21  
1.205  
1.2  
1.205  
1.2  
1.195  
1.195  
0A_1.2VOUT  
19VIN_1.2VOUT  
1.19  
1.19  
15A_1.2VOUT  
12VIN_1.2VOUT  
1.185  
1.185  
1.18  
1.18  
0
2
4
6
8
10  
7
9
11 13 15 17 19 21 23 25  
Input Voltage (V)  
Load Current (A)  
Figure 14. Load Regulation  
Figure 15. Line Regulation  
EN (5 V/div)  
EN (5 V/div)  
V
= 19 V  
= 0 A  
V
= 19 V  
= 15 A  
IN  
IN  
Soft Start (0.5 V/div)  
Soft Start (0.5 V/div)  
I
I
OUT  
OUT  
V
OUT  
(0.5 V/div)  
V
OUT  
(0.5 V/div)  
PGOOD (5 V/div)  
PGOOD (5 V/div)  
Time (500 s/div)  
Time (500 s/div)  
Figure 16. Startup Waveforms with 0 A Load Current  
Figure 17. Startup Waveforms with 15 A Load Current  
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9
FAN23SV65AMPX  
TYPICAL PERFORMANCE CHARACTERISTICS (continued)  
Tested using evaluation board circuit shown in Figure 1 with V = 19 V, V  
= 1.2 V, F = 500 kHz, T = 25°C, and no airflow;  
IN  
OUT  
sw  
A
unless otherwise specified.  
EN (5 V/div)  
EN (5 V/div)  
V
= 19 V  
= 0 A  
IN  
Soft Start (0.5 V/div)  
I
OUT  
Soft Start (0.5 V/div)  
V
(0.5 V/div)  
OUT  
V
= 19 V  
= 15 A  
IN  
V
OUT  
Prebias  
I
OUT  
V
OUT  
(0.5 V/div)  
PGOOD (5 V/div)  
PGOOD (5 V/div)  
Time (200 s/div)  
Time (500 s/div)  
Figure 18. Shutdown Waveforms with  
15 A Load Current  
Figure 19. Startup Waveforms with PreBias  
Voltage on Output  
V
OUT  
(20 mV/div)  
V
OUT  
(20 mV/div)  
V
= 19 V  
= 0 A  
V
= 19 V  
= 15 A  
IN  
IN  
I
I
OUT  
OUT  
V
SW  
(10 V/div)  
V
SW  
(10 V/div)  
Time (20 s/div)  
Time (1 s/div)  
Figure 20. Static Load Ripple at No Load  
Figure 21. Static Load Ripple at Full Load  
V
OUT  
(20 mV/div)  
V
OUT  
(20 mV/div)  
V
= 19 V  
= 1.2 V  
V
= 19 V  
= 1.2 V  
IN  
IN  
I
(1 A/div)  
OUT  
V
OUT  
V
OUT  
I
(1 A/div)  
OUT  
Time (50 s/div)  
Time (50 s/div)  
Figure 22. Operation as Load Changes from 0 A to 3 A Figure 23. Operation as Load Changes from 3 A to 0 A  
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10  
FAN23SV65AMPX  
TYPICAL PERFORMANCE CHARACTERISTICS (continued)  
Tested using evaluation board circuit shown in Figure 1 with V = 19 V, V  
= 1.2 V, F = 500 kHz, T = 25°C, and no airflow;  
IN  
OUT  
sw  
A
unless otherwise specified.  
V
OUT  
(20 mV/div)  
V
OUT  
(20 mV/div)  
V
IN  
= 19 V, V  
= 1.2 V  
OUT  
I
from 0 A to 7.5 A, 2.5 A/s  
OUT  
I
(5 A/div)  
OUT  
I
(5 A/div)  
OUT  
V
IN  
= 19 V, V  
= 1.2 V  
OUT  
I
from 7.5 A, to 15 A, 2.5 A/s  
OUT  
Time (100 s/div)  
Time (100 s/div)  
Figure 24. Load Transient from 0% to 50%  
Load Current  
Figure 25. Load Transient from 50% to 100%  
Load Current  
PGOOD indicates UVP  
Level 2  
Pull VOUT to 3.8 V  
through 3 resistor  
PGOOG (5 V/div)  
With V  
falling in OCP  
OUT  
V
OUT  
(1 V/div)  
V (0.5 V/div)  
fb  
Level 1  
V
OUT  
(1 V/div)  
Soft Start (1 V/div)  
PGOOD (5 V/div)  
I (10 A/div)  
L
I
= 0 A then short output  
OUT  
V
SW  
(10 V/div)  
Time (20 s/div)  
Figure 26. OverCurrent Protection with Heavy  
Figure 27. OverVoltage Protection Level 1  
Load  
and Level 2  
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11  
FAN23SV65AMPX  
CIRCUIT OPERATION  
The FAN23SV65A uses a constant ontime modulation  
architecture with VIN feedforward input to  
accommodate a wide VIN range. This method provides  
normal operating range. The resistor value can be calculated  
from the following equation:  
a
V
IN,max * VEN,Clamp,min  
22 A  
REN  
u
(eq. 2)  
fixed switching frequency (f ) operation when the  
SW  
inductor operates in Continuous Conduction Mode (CCM)  
and variable frequency when operating in Pulse Frequency  
Mode (PFM) at light loads. Additional benefits include  
excellent line and load transient response, cyclebycycle  
current limiting, and no loop compensation is required.  
At the beginning of each cycle, FAN23SV65A turns on  
Constant Ontime Modulation  
The FAN23SV65A uses a constant ontime modulation  
technique, in which the HS MOSFET is turned on for a fixed  
time, set by the modulator, in response to the input voltage  
and the frequency setting resistor. This ontime is  
proportional to the desired output voltage, divided by the  
input voltage. With this proportionality, the frequency is  
essentially constant over the load range where inductor  
current is continuous.  
the highside MOSFET (HS) for a fixed duration (t ). At  
ON  
the end of t , HS turns off for a duration (t ) determined  
ON  
OFF  
by the operating conditions. Once the FB voltage (V ) falls  
FB  
below the reference voltage (V ), a new switching cycle  
REF  
For buck converter in ContinuousConduction Mode  
(CCM), the switching frequency f is expressed as:  
begins.  
SW  
The modulator provides a minimum offtime (t  
)
OFFMIN  
VOUT  
VIN   tON  
fSW  
+
of 320 ns to provide a guaranteed interval for lowside  
MOSFET (LS) current sensing and PFM operation. Toffmin is  
also used to provide stability against multiple pulsing and  
limits maximum switching frequency during transient  
events.  
(eq. 3)  
The ontime generator sets the ontime (t ) for the  
ON  
highside MOSFET, which results in the switching  
frequency of the regulator during steadystate operation. To  
maintain a relatively constant switching frequency over a  
wide range of input conditions, the input voltage  
information is fed into the ontime generator.  
Enable  
The enable pin can be driven with an external logic signal,  
connected to a resistive divider from PVIN/Vin to ground to  
create an UnderVoltage Lockout (UVLO) based on the  
PVIN/VIN supply, or connected to PVIN/VIN through a  
single resistor to autoenable while operating within the EN  
pin internal clamp current sink capability.  
The EN pin can be directly driven by logic voltages of 5 V,  
3.3 V, 2.5 V, etc. If the EN pin is driven by 5 V logic, a small  
current flows into the pin when the EN pin voltage exceeds  
the internal clamp voltage of 4.3 V. To eliminate clamp  
current flowing into the EN pin use a voltage divider to limit  
the EN pin voltage to < 4 V.  
tON is determined by:  
CtON  
ItON  
tON  
+
+
  2 V  
(eq. 4)  
(eq. 5)  
where ItON is:  
VIN  
RFREQ  
1
10  
ItON  
 
where R  
is the frequencysetting resistor described  
FREQ  
in the Setting Switching Frequency section; C  
is the  
tON  
internal 2.2 pF capacitor; and I  
is the V feedforward  
tON  
IN  
current that generates the ontime.  
The FAN23SV65A implements opencircuit detection on  
the FREQ pin to protect the output from an infinitely long  
ontime. In the event the FREQ pin is left floating, switching  
of the regulator is disabled. The FAN23SV65A is designed  
To implement the UVLO function based on PVIN/VIN  
voltage level, select values for R7 and R8 in Figure 1 such  
that the tap point reaches 1.26 V when VIN reaches the  
desired startup level using the following equation:  
for V input range 7 to 24 V, f 200 kHz to 1 MHz,  
IN  
SW  
VIN,on  
resulting in an I  
ratio exceeding 1 to 15.  
R7 + R8ǒ Ǔ  
* 1  
tON  
(eq. 1)  
VEN,on  
As the ratio of V  
to V increases, t  
introduces  
OUT  
IN  
OFF,min  
where VIN,on is the input voltage for startup and V  
is  
a limit on the maximum switching frequency as calculated  
in the following equation, where the factor 1.2 is included in  
the denominator to provide some headroom for transient  
operation:  
EN,on  
the EN pin rising threshold of 1.26 V. With R8 selected as  
10 k, and V = 9 V the value of R7 is 61.9 k.  
IN,on  
The EN pin can be pulled high with a single resistor  
connected from VIN to the EN pin. With VIN > 5.5 V a series  
resistor is required to limit the current flow into the EN pin  
clamp to less than 24 A to keep the internal clamp within  
VOUT  
ǒ1 * Ǔ  
Vin,min  
fSW +t  
(eq. 6)  
1.2   tOFF,min  
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12  
FAN23SV65AMPX  
SoftStart (SS)  
filter of a 10 resistor and 0.1 F capacitor to minimize any  
noise sources from the driver supply.  
An UnderVoltage Lockout (UVLO) circuit monitors the  
VCCvoltage to ensure proper operation. Once the VCC voltage  
is above the UVLO threshold, the part begins operation after  
an initialization routine of 50 s. There is no UVLO circuitry  
A conventional softstart ramp is implemented to provide  
a controlled startup sequence of the output voltage. A  
current is generated on the SS pin to charge an external  
capacitor. The lesser of the voltage on the SS pin and the  
reference voltage is used for output regulation.  
To reduce V  
ripple and achieve a smoother ramp of the  
on either the PVCC or V rails.  
OUT  
IN  
output voltage, t is modulated during softstart. T  
starts at 50% of the steadystate ontime (PWM Mode) and  
ramps up to 100% gradually.  
ON  
ON  
Pulse Frequency Modulation (PFM)  
One of the key benefits of using a constant ontime  
modulation scheme is the seamless transitions in and out of  
Pulse Frequency Modulation (PFM) Mode. The PWM  
signal is not slave to a fixed oscillator and, therefore, can  
operate at any frequency below the target steadystate  
frequency. By reducing the frequency during lightload  
conditions, the efficiency can be significantly improved.  
The FAN23SV65A provides a ZeroCrossing Detector  
(ZCD) circuit to identify when the current in the inductor  
reverses direction. To improve efficiency at light load, the  
LS MOSFET is turned off around the zero crossing to  
eliminate negative current in the inductor. For predictable  
operation entering PFM mode the controller waits for nine  
consecutive zero crossings before allowing the LS  
MOSFET to turn off.  
During normal operation, the SS voltage is clamped to  
400 mV above the FB voltage. The clamp voltage drops to  
40 mV during an overload condition to allow the converter  
to recover using the softstart ramp once the overload  
condition is removed. Ontime modulation during SS is  
disabled when an overload condition exists.  
To maintain a monotonic softstart ramp, the regulator is  
forced into PFM Mode during softstart. The minimum  
frequency clamp is disabled during softstart.  
The nominal startup time is programmable through an  
internal current source charging the external softstart  
capacitor C :  
SS  
ISS   tSS  
VREF  
CSS  
+
(eq. 7)  
In PFM Mode, f varies or modulates proportionally to  
SW  
where:  
the load; as load decreases, f  
also decreases. The  
SW  
C
SS  
= External softstart programming capacitor;  
switching frequency, while the regulator is operating in  
PFM, can be expressed as:  
I
t
= Internal softstart charging current source, 10 A;  
= Softstart time; and  
SS  
SS  
2   L   IOUT  
VOUT  
VIN  
V
REF  
= 600 mV  
fSW  
+
 
(eq. 8)  
t2   (VIN * VOUT  
)
ON  
For example; for 1ms startup time, C = 15 nF. The  
softstart option can be used for ratiometric tracking. When  
EN is LOW, the softstart capacitor is discharged.  
SS  
where L is inductance and IOUT is output load current.  
Minimum Frequency Clamp  
To maintain a switching frequency above the audible  
range, the FAN23SV65A clamps the switching frequency to  
a minimum value of 18 kHz. The LS MOSFET is turned on  
to discharge the output and trigger a new PWM cycle. The  
minimum frequency clamp is disabled during softstart.  
Startup on PreBias  
FAN23SV65A allows the regulator to start on a prebias  
output, V , and ensures V  
OUT  
is not discharged during the  
OUT  
softstart operation.  
To guarantee no glitches on VOUT at the beginning of the  
softstart ramp, the LS is disabled until the first  
positivegoing edge of the PWM signal. The regulator is also  
forced into PFM Mode during softstart to ensure the  
inductor current remains positive, reducing the possibility of  
discharging the output voltage.  
Protection Features  
The converter output is monitored and protected against  
overcurrent,  
overvoltage,  
undervoltage,  
and  
hightemperature conditions.  
OverCurrent Protection (OCP)  
The FAN23SV65A uses current information through the  
LS to implement valleycurrent limiting. While an OC  
event is detected, the HS is prevented from turning on and  
the LS is kept on until the current falls below the  
userdefined set point. Once the current is below the set  
point, the HS is allowed to turn on.  
Internal Linear Regulator  
The FAN23SV65A includes a linear regulator to facilitate  
singlesupply operation for selfbiased applications. PVCC  
is the linear regulator output and supplies power to the  
internal gate drivers. The PVCC pin should be bypassed  
with a 2. 2 F ceramic capacitor. The device can operate  
During an OC event, the output voltage may droop if the  
load current is greater than the current the converter is  
providing. If the output voltage drops below the UV  
threshold, an overload condition is triggered. During an  
overload condition, the SS clamp voltage is reduced to  
from a 5 V rail if the V , P , and P  
together to bypass the internal linear regulator.  
pins are connected  
IN VIN  
VCC  
VCC Bias Supply and UVLO  
The VCC rail supplies power to the controller. It is  
generally connected to the PVCC rail through a lowpass  
www.onsemi.com  
13  
FAN23SV65AMPX  
40 mV and the ontime is fixed at the steadystate duration.  
In certain applications, especially designs utilizing only  
ceramic output capacitors, there may not be sufficient ripple  
magnitude available on the feedback pin for stable  
operation. In this case, an external circuit consisting of 2  
resistors (R2 and R6) and 2 capacitors (C4 and C5) can be  
added to inject ripple voltage into the FB pin (see Figure 1).  
There are some specific considerations when selecting the  
RCC ripple injector circuit. For typical applications, use  
4.99 kfor R6, the value of C4 can be selected as 0.1 F and  
approximate values for R2 and C5 can be determined using  
the following equations.  
By nature of the control method; as VOUT drops, the  
switching frequency is lower due to the reduced rate of  
inductor current decay during the offtime.  
The ILIM pin has an opendetection circuit to provide  
protection against operation without a current limit.  
UnderVoltage Protection (UVP)  
If VFB is below the undervoltage threshold of 11% V  
REF  
(534 mV), the part enters UVP and PGOOD pulls LOW.  
OverVoltage Protection (OVP)  
There are two levels of OV protection: +11% and +22%.  
During an OV event, PGOOD pulls LOW.  
R2 must be small enough to develop 12 mV of ripple:  
(VIN * VOUT)   VOUT  
VIN   0.012 V   C4   fSW  
R2 t  
(eq. 11)  
When V is > +11% of V  
(666 mV), both HS and LS  
FB  
REF  
turn off. By turning off the LS during an OV event, V  
overshoot can be reduced when there is positive inductor  
current by increasing the rate of discharge. Once the V  
R2 must be selected such that the R2C4 time constant  
enables stable operation:  
OUT  
FB  
0.33   2  fSW   LOUT   COUT  
R2 t  
(eq. 12)  
voltage falls below V , the latched OV signal is cleared  
REF  
C4  
and operation returns to normal.  
A second overvoltage detection is implemented to  
The minimum value of C5 can be selected to minimize the  
capacitive component of ripple appearing on the feedback  
pin:  
protect the load from more serious failure. When V rises  
FB  
+22% above the V  
(732 mV), the HS turns off until a  
REF  
LOUT   COUT   (R3 ) R4)  
power cycle on VCC and the LS is forced on until 530 mV  
of V  
C5min  
+
(eq. 13)  
R2   R3   R4   C4  
.
FB  
Using the minimum value of C5 generally offers the best  
transient response, and 100 pF is a good initial value in many  
applications. However, under some operating conditions  
excessive pulse jitter may be observed. To reduce jitter and  
improve stability, the value of C5 can be increased:  
OverTemperature Protection (OTP)  
FAN23SV65A incorporates an overtemperature  
protection circuit that disables the converter when the  
controller die temperature reaches 155°C. The IC restarts  
when the die temperature falls below 140°C.  
C5 2   C5min  
(eq. 14)  
Power Good (PGOOD)  
The PGOOD pin serves as an indication to the system that  
the output voltage of the regulator is stable and within  
regulation. Whenever V  
window or the regulator is at overtemperature (UV, OV, and  
OT), the PGOOD pin is pulled LOW.  
5 V PVCC  
The PVCC is the output of the internal regulator that  
supplies power to the drivers and V . It is crucial to keep  
this pin decoupled to PGND with a w1 F X5R or X7R  
ceramic capacitor. Because VCC powers internal analog  
circuit, it is filtered from PVCC with a 10 resistor and  
0.1ꢅ ꢁ F X7R decoupling ceramic capacitor to AGND.  
CC  
is outside the regulation  
OUT  
PGOOD is an opendrain output that asserts LOW when  
V
OUT  
is out of regulation or when OT is detected.  
Setting the Output Voltage (VOUT)  
The output voltage V  
highside MOSFET ontime interval when the valley of the  
is regulated by initiating a  
OUT  
APPLICATION INFORMATION  
Stability  
divided output voltage appearing at the FB pin reaches  
Constant ontime stability consists of two parameters:  
V . Since this method regulates at the valley of the output  
REF  
stability criterion and sufficient signal at V  
Stability criterion is given by:  
.
FB  
ripple voltage, the actual DC output voltage on V  
is  
OUT  
offset from the programmed output voltage by the average  
value of the output ripple voltage. The initial V setting  
tON  
RESR   COUT uu  
2
OUT  
(eq. 9)  
of the regulator can be programmed from 0.6 V to 5.5 V by  
an external resistor divider (R3 and R4):  
Sufficient signal requirement is given by:  
R3  
I
 
R
u
V
(eq. 10)  
R4 +  
I
N
D
E
S
R
F
B
(eq. 15)  
VOUT  
ǒ Ǔ* 1  
VREF  
where I  
is the inductor current ripple and V is the  
FB  
IND  
ripple voltage on V  
FB, which should be w12 mV.  
where V  
is 600 mV.  
REF  
www.onsemi.com  
14  
FAN23SV65AMPX  
For example; for 1.2 V V  
and 10 kR3, then R4 is  
at VIN = 19 V, with a resultant small increase in 
פ
VIN ripple  
voltage above 120 mV used in the calculation. Also, each  
10ꢅ ꢁ F can carry over 3 ARMS in the frequency range from  
100 kHz to 1 MHz, exceeding the input capacitor current  
rating requirements. An additional 0.1 F capacitor may be  
needed to suppress noise generated by high frequency  
switching transitions.  
OUT  
10 kꢀꢆ For 600 mV V , R4 is left open. V is trimmed  
OUT  
FB  
to a value of 596 mV when V  
output voltage, including the effect of the output ripple  
voltage, can be approximated by the equation:  
= 600 mV, so the final  
REF  
Vrip  
(eq. 16)  
R3  
R4  
  ƪ1 ) ƫ)  
ƪ ƫ  
VOUT + VFB  
2
Output Capacitor Selection  
Output capacitor C  
RMS current I  
is selected based on voltage rating,  
rating, and capacitance. For  
Setting the Switching Frequency (fSW)  
OUT  
f
is programmed through external R  
as follows:  
COUT(RMS)  
SW  
FREQ  
capacitors having DC voltage bias derating, such as ceramic  
capacitors, higher rating is highly recommended.  
VOUT  
20   VtON   fSW  
(eq. 17)  
RFREQ  
+
When calculating  
requirement is the current load step transient. If the  
unloading transient requirement (I transitioning from  
C
,
usually the dominant  
OUT  
where C  
= 2.2 pF internal capacitor that generates tON.  
For example; for f = 500 kHz and V  
tON  
= 1.2 V, select a  
SW  
OUT  
OUT  
standard value for R  
= 54.9 k.  
FREQ  
HIGH to LOW), is satisfied, then the load transient (I  
OUT  
transitioning LOW to HIGH), is also usually satisfied. The  
unloading COUT calculation, assuming C has negligible  
parasitic resistance and inductance in the circuit path, is  
given by:  
Inductor Selection  
The inductor is typically selected based on the ripple  
OUT  
current (I ), which is usually selected as 25% to 45% of the  
L
maximum DC load. The inductor current rating should be  
selected such that the saturation and heating current ratings  
exceed the intended currents encountered in the application  
over the expected temperature range of operation.  
Regulators that require fast transient response use smaller  
inductance and higher current ripple; while regulators that  
require higher efficiency keep ripple current on the low side.  
The inductor value is given by:  
I2MAX * I2  
(VOUT ) VOUT)  
MIN  
2 * V2  
(eq. 21)  
COUT + L   
OUT  
where IMAX and IMIN are maximum and minimum load  
steps, respectively and VOUT is the voltage overshoot,  
usually specified at 3 to 5%.  
For example: for V = 12 V, V  
= 1.2 V, 10 A IMAX, 5 A  
I
OUT  
I
, f  
MIN SW  
= 500 kHz, L  
= 560 nH, and 4% V  
OUT OUT  
(VIN * VOUT)  
IL   fSW  
VOUT  
VIN  
deviation of 48 mV; the COUT value is calculated to be 356 F.  
This capacitor requirement can be satisfied using eight  
47ꢅ ꢁ F, 6.3 Vrated X5R ceramic capacitors. This  
calculation applies for load current slew rates that are faster  
than the inductor current slew rate, which can be defined as  
VOUT/L during the load current removal.  
(eq. 18)  
L +  
 
For example: for 19 V V , 1.2 V V  
, 15 A load, 25%  
IN  
OUT  
I
,
a
n
d
5
0
0
k
H
z
f
;
L
i
s
5
7
6
n
H
,
a
n
d
a
s
t
a
n
d
a
r
d
v
a
l
u
e
o
f
L
SW  
560 nH is selected.  
Input Capacitor Selection  
Setting the Current Limit  
Input capacitor C is selected based on voltage rating,  
IN  
Current limit is implemented by sensing the inductor  
valley current across the LS MOSFET VDS during the LS  
ontime. The current limit comparator prevents a new  
ontime from being started until the valley current is less  
than the current limit.  
The set point is configured by connecting a resistor from  
the ILIM pin to the SW pin. A trimmed current is output onto  
the ILIM pin, which creates a voltage across the resistor.  
When the voltage on ILIM goes negative, an overcurrent  
condition is detected.  
RMS current I  
rating, and capacitance. For  
CIN(RMS)  
capacitors having DC voltage bias derating, such as ceramic  
capacitors, higher rating is strongly recommended. RMS  
current rating is given by:  
Ǹ
  D   (1 * D)  
(eq. 19)  
ICIN(RMS) + ILOAD*MAX  
where I  
is the maximum load current and D is  
LOADMAX  
the duty cycle V  
V . The maximum I  
occurs  
OUT/ IN  
CIN(RMS)  
at 50% duty cycle.  
The capacitance is given by:  
R
ILIM  
is calculated by:  
ILOAD*MAX   D   (1 * D)  
fSW   VIN  
(eq. 20)  
CIN  
+
RILIM + 1.08   KILIM   IVALLEY  
(eq. 22)  
where VIN is the input voltage ripple, normally 1% of  
V .  
where K  
is the current source scale factor, and  
ILIM  
I
is the inductor valley current when the current limit  
IN  
VALLEY  
threshold is reached. The factor 1.08 accounts for the  
temperature offset of the LS MOSFET compared to the  
control circuit.  
For example; for V = 19 V, VIN = 120 mV, V  
=
IN  
OUT  
1.2 V, 15 A load, and f = 500 kHz; C is 14.8 F and  
SW  
IN  
I
is 3.64 A . Select a minimum of three 10 F 25  
RMS  
CIN(RMS)  
With the constant ontime architecture, HS is always  
turned on for a fixed ontime; this determines the  
peaktopeak inductor current.  
V rated ceramic capacitors with X7R or similar dielectric,  
recognizing that the capacitor DC bias characteristic  
indicates that the capacitance value falls approximately 60%  
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15  
FAN23SV65AMPX  
Current ripple I is given by:  
Sensitive analog components including SS, FB, ILIM,  
FREQ, and EN should be placed away from the highvoltage  
switching circuits such as SW and BOOT and connected to  
their respective pins with short traces. The inner PCB layer  
closest to the FAN23SV65A device should have power  
ground (PGND) under the power processing portion of the  
device (PVIN, SW, and PGND). This inner PCB layer  
should have a separate analog ground (AGND) under the P1  
pad and the associated analog components. AGND and  
PGND should be connected together near the IC between  
PGND pins 1821 and AGND pin 23, which connects to P1  
thermal pad.  
The AGND thermal pad (P1) should be connected to  
AGND plane on inner layer using four 0.25 mm vias spread  
under the pad. No vias are included under PVIN (P2) and  
SW (P3) to maintain the PGND plane under the power  
circuitry intact.  
ǒV  
Ǔ
IN * VOUT   tON  
IL  
+
(eq. 23)  
L
From the equation above, the worstcase ripple occurs  
during an output short circuit (where V is 0 V). This  
should be taken into account when selecting the current limit  
set point.  
The FAN23SV15M uses valleycurrent sensing; the  
) set point is the valley (I  
The valley current level for calculating R  
OUT  
current limit (I  
).  
ILIM  
VALLEY  
is given by:  
ILIM  
IL  
2
IVALLEY + ILOAD(CL)  
*
(eq. 24)  
where I  
is the DC load current when the current  
limit threshold is reached.  
LOAD (CL)  
For example: In a converter designed for 15 A steadystate  
operation and 4.5 A current ripple, the currentlimit  
threshold could be selected at 120% of I  
accommodate transient operation and inductor value  
decrease under loading. As a result, I is 18 A,  
Power circuit loops that carry high currents should be  
arranged to minimize the loop area. Primary focus should be  
to minimize the loop for current flow from the input  
capacitor to PVIN, through the internal MOSFETs, and  
returning to the input capacitor. The input capacitor should  
be as close to the PVIN terminals as possible.  
to  
LOAD,(SS)  
LOAD,(CL)  
I
= 15.75 A, and R  
is selected as the standard  
VALLEY  
ILIM  
value of 1.47 k.  
The current return path from PGND at the lowside  
MOSFET source to the negative terminal of the input  
capacitor can be routed under the inductor and also through  
vias that connect the input capacitor and lowside MOSFET  
source to the PGND region under the power portion of the  
IC.  
Boot Resistor  
In some applications, especially with higher input  
voltage, the V ring voltage may exceed derating  
guidelines of 80% to 90% of absolute rating for V . In this  
situation a resistor can be connected in series with boot  
SW  
SW  
capacitor (C3 in Figure 1) to reduce the turnon speed of the  
The SW node trace that connects the source of the  
highside MOSFET and the drain of the lowside MOSFET  
to the inductor should be short and wide.  
To control the voltage across the output capacitor, the  
output voltage divider should be located close to the FB pin,  
with the upper FB voltage divider resistor connected to the  
positive side of the output capacitor and the bottom resistor  
connected to the AGND portion of the FAN23SV65A  
device.  
When using ceramic capacitors with external ramp  
injection circuitry (R2, C4, C5 in Figure 1), R2 and C4  
should be connected near the inductor and coupling  
capacitor C5 should be placed near FB pin to minimize FB  
pin trace length.  
high side MOSFET to reduce the amplitude of the V ring  
SW  
voltage. If necessary, a resistor and capacitor snubber can be  
added from VSW to PGND to reduce the magnitude of the  
ringing voltage. Please contact ON Semiconductor  
Customer Support for assistance selecting a boot resistor or  
snubber circuit in applications that operate above a 21 V  
typical input voltage.  
PRINTED CIRCUIT BOARD (PCB) LAYOUT  
GUIDELINES  
The following points should be considered before  
beginning a PCB layout using the FAN23SV65A. A sample  
PCB layout from the evaluation board is shown in Figure 28  
Figure 31 following these layout guidelines.  
Power components (input capacitors, output capacitors,  
inductor, and FAN23SV65A device) should be placed on a  
common side of the PCB in close proximity to each other  
and connected using surface copper.  
Decoupling capacitors for PVCC and VCC should be  
located close to their respective device pins.  
SW node connections to BOOT, ILIM, and ripple  
injection resistor R2 should be through separate traces.  
www.onsemi.com  
16  
FAN23SV65AMPX  
Figure 28. Evaluation Board Top Layer Copper  
Figure 29. Evaluation Board Inner Layer 1 Copper  
www.onsemi.com  
17  
FAN23SV65AMPX  
Figure 30. Evaluation Board Top Layer Copper  
Figure 31. Evaluation Board Inner Layer 1 Copper  
www.onsemi.com  
18  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
PQFN34 5X5.5, 0.5P  
CASE 483AM  
ISSUE A  
DATE 02 JUL 2021  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13662G  
PQFN34 5X5.5, 0.5P  
PAGE 1 OF 2  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
PQFN34 5X5.5, 0.5P  
CASE 483AM  
ISSUE A  
DATE 02 JUL 2021  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13662G  
PQFN34 5X5.5, 0.5P  
PAGE 2 OF 2  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “asis” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
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