FAM65V05DF1 [ONSEMI]
智能功率模块 (IPM)，AEC-Q，汽车，逆变器，650V，50A;
| 型号： | FAM65V05DF1 |
| 厂家： | 
ONSEMI |
| 描述： | 智能功率模块 (IPM)，AEC-Q，汽车，逆变器，650V，50A |
| 文件： | 总16页 (文件大小：766K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Auto SPM) Series
Automotive 3-Phase IGBT
Smart Power Module
FAM65V05DF1
General Description
FAM65V05DF1 is an advanced Auto SPM module providing
a fully−featured high−performance auxiliary inverter output stage
for hybrid and electric vehicles. These modules integrate optimized
gate drive of the built−in IGBTs to minimize EMI and losses, while
also providing various protection features, in a compact 12 cm
footprint.
2
3D Package Drawing
(Click to Activate 3D Content)
ASPM27−CCA
Features
CASE MODCB
• Automotive SPM in 27 Pin DIP Package
• 650 V/50 A 3−phase IGBT Module with Low Loss IGBTs
and Soft Recovery Diodes Optimized for Motor Control
Applications
MARKING DIAGRAM
• Integrated Gate Drivers with Internal VS connection, Under
Voltage lockout, Over−current shutdown, Temperature Sensing
Unit and Fault reporting
• Electrically Isolated AlN Substrate with Low Rqjc
• Module Serialization for Full Traceability
• UL Certified No. E209204 (UL 1557)
• Pb−Free, Halid Free and RoHS Compliant
• AEC & AQG324 Qualified and PPAP Capable
Applications and Benefits
Automotive high voltage auxiliary motors such as air conditioning
compressor and oil pump.
• Compact Design
• Simplified PCB Layout and Low EMI
• Simplified Assembly
• High Reliability
ON
= onsemi Logo
FAM65V05DF1
XXX
Y
WW
0000001
= Specific Device Code
= Lot Number
= Year
= Work Week
= Serial Number
ORDERING INFORMATION
Related Resources
• AN−8422 − 650 V Auto SPM Series; Automotive 3−Phase IGBT
Smart Power Module User’s Guide
See detailed ordering and shipping information on page 7
of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
May, 2022 − Rev. 2
FAM65V05DF1/D
FAM65V05DF1
PIN CONFIGURATION
TOP VIEW
Figure 1. Pin Configuration
PIN DESCRIPTION
Pin Number
Name
VCC (L)
COM
Description
1
2
Low−side Common Bias Voltage for IC and IGBTs Driving
Common Supply Ground
3
IN (UL)
IN (VL)
IN (WL)
VFO
Signal Input for Low−side U Phase
4
Signal Input for Low−side V Phase
5
Signal Input for Low−side W Phase
6
Fault Output
7
VTS
Output for LVIC temperature sense
8
CSC
Capacitor (Low−pass Filter) for Short−Current Detection Input
Signal Input for High−side U Phase
9
IN (UH)
VCC (H)
VB (U)
VS (U)
IN (VH)
VCC (H)
VB (V)
VS (V)
IN (WH)
VCC (H)
VB (W)
VS (W)
NU
10
11
12
13
14
15
16
17
18
19
20
21
22
High−side Common Bias Voltage for IC and IGBTs Driving
High−side Bias Voltage for U Phase IGBT Driving
High−side Bias Voltage Ground for U Phase IGBT Driving
Signal Input for High−side V Phase
High−side Common Bias Voltage for IC and IGBTs Driving
High−side Bias Voltage for V Phase IGBT Driving
High−side Bias Voltage Ground for V Phase IGBT Driving
Signal Input for High−side W Phase
High−side Common Bias Voltage for IC and IGBTs Driving
High−side Bias Voltage for W Phase IGBT Driving
High−side Bias Voltage Ground for W Phase IGBT Driving
Negative DC–Link Input for U Phase
NV
Negative DC–Link Input for V Phase
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2
FAM65V05DF1
PIN DESCRIPTION (continued)
Pin Number
Name
NW
U
Description
23
24
25
26
27
Negative DC–Link Input for W Phase
Output for U Phase
V
Output for V Phase
W
Output for W Phase
P
Positive DC–Link Input
INTERNAL EQUIVALENT CIRCUIT AND INPUT/OUTPUT PINS
Figure 2. Schematic
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3
FAM65V05DF1
GATE DRIVERS BLOCK DIAGRAM
High Side Gate Driver (x3 Single Channel)
• Control circuit under−voltage (UV) protection
• 3.3 V/5 V CMOS/LSTTL compatible, Schmitt trigger
input
High−Side Region
AS7107X
VB
R
R
UVLO
XOR
Common
Mode
Pre
Driver
Q
HO
VS
Common
Mode
Noise
Filter
VCC
Noise
Canceller
Noise
Canceller
25 V
S
25 V
25 V
Input
Filter
Short−Pulse
Generator
HIN
5 kW
COM
Figure 3. High Side Gate Drivers (Block Diagram)
Low Side Gate Driver (x1 Monolithic Three−Channel)
• Control circuit under−voltage (UV) protection
• Short circuit protection (SC)
• Fault Output
• 3.3 V/5 V CMOS/LSTTL compatible, Schmitt trigger
input
• Temperature sensing unit
U−Phase
LINU
LOU
LOV
V−Phase
LINV
W−Phase
VDD
Pre
Driver
Restart
LINW
Input Filter
Matching Delay
LOW
5 kW
80 mA
TSD
TSU
FO
TSU
CSC
UVLO
(Temperature Sensing Unit)
Timer
Filter
CSC Filter
0.5 V
VCC
COM
25 V
AS4743X
Figure 4. Low Side Gate Drivers (Block Diagram)
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4
FAM65V05DF1
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise specified)
J
Symbol
Parameter
Conditions
Rating
Unit
INVERTER PART
V
Supply Voltage
Applied between P− N , N , N
500
575
V
V
PN
PN(Surge)
U
V
W
V
Supply Voltage (Surge)
Applied between P− N , N , N
U V
W
dI/dt ≤ 3 A/ns
V
Collector−Emitter Voltage
T = 25°C
650
50
V
A
A
CES
J
at the IGBT/Diode
I
C
IGBT Continuous Collector
Current
T
T
= 100°C, T
= 100°C, T
= 175°C (Note 1)
= 175°C,
C
Jmax
I
IGBT Peak Collector Pulse
Current
150
CP
C
Jmax
V
CC
= V = 15 V, less than 1 ms (Note 6)
BS
P
Collector Dissipation
Junction Temperature
T
= 25°C per IGBT
333
W
°C
°C
C
C
T
IGBT/Diode
Driver IC
−40 ~ +175
−40 ~ +150
J
CONTROL PART
V
Control Supply Voltage
Applied between V
, V − COM
20
20
V
V
CC
CC(H) CC(L)
V
High−side Control Bias Voltage Applied between V
− V
,
BS
B(U)
S(U)
− V
S(V) B(W) S(W)
V
− V
, V
B(V)
V
IN
Input Signal Voltage
Applied between IN
, IN
, IN
,
−0.3 ~ V + 0.3
V
(UH)
(VH)
(WH)
CC
IN
, IN
, IN
− COM
(UL)
(VL)
(WL)
V
Fault Output Supply Voltage
Fault Output Current
Applied between V − COM
−0.3 ~ V + 0.3
V
mA
V
FO
FO
CC
I
Sink Current at V Pin
5
FO
FO
V
SC
Current Sensing Input Voltage
Temperature Sense Unit
Applied between C − COM
−0.3 ~ V + 0.3
CC
SC
V
−0.3 ~ 2/3 × V
V
TS
CC
TOTAL SYSTEM
T
Storage Temperature
Isolation Voltage
−40 ~ 125
2500
°C
STG
V
60 Hz, Sinusoidal, AC 1 minute,
Connection Pins to heat sink plate
V
rms
ISO
T
LEAD
Max Lead Temperature at the
Base of the Package During
pcb Assembly
No remelt of internal solder joints
200
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
PACKAGE CHARACTERISTICS
Symbol
Parameter
Conditions
Inverter IGBT part (per IGBT)
Inverter FWD part (per DIODE)
Typ
−
Max
0.45
0.85
−
Unit
°C/W
°C/W
nH
R
Junction to Case Thermal
Resistance (Note 2)
th(j−c)Q
R
−
th(j−c)F
L
s
Package Stray Inductance
P to N , N , N (Note 3)
24
U
V
W
1. Current limited by package terminal, defined by design.
2. Case temperature measured below the package at the chip center, compliant with MIL STD 883−1012.1 (single chip heating), DBC
discoloration allowed, please refer to application note AN−9190 (Impact of DBC Oxidation on SPM Module Performance).
3. Stray inductance per phase measured per IEC 60747−15.
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5
FAM65V05DF1
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
INVERTER PART (T as specified)
J
V
Collector-Emitter Leakage
Current
V
I
= V = 15 V, V = 5 V
−
−
1.65
1.9
−
V
V
CE(SAT)
CC
C
BS
IN
= 50 A, T = 25°C
J
V
= V = 15 V, V = 5 V
2.4
CC
BS
IN
I
= 50 A, T = 125°C
C
J
V
FWD Forward Voltage
V
V
V
= 0 V, I = 30 A, T = 25°C
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
2.1
−
2.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
V
V
F
IN
F
J
= 0 V, I = 30 A, T = 125°C
1.9
IN
F
J
HS
t
High Side Switching Times
= 300 V, V = V = 15 V
0.73
0.12
0.80
0.14
0.10
0.70
0.15
0.87
0.19
0.20
0.68
0.20
0.86
0.19
0.14
0.64
0.24
0.88
0.23
0.20
5
ms
ON
PN
CC
BS
I
= 50 A
C
t
C(ON)
V
IN
= 0 V ↔ 5 V, Ls = 55 nH,
Inductive Load
t
OFF
T = 25°C (Notes 4, 5)
J
t
C(OFF)
t
rr
t
High Side Switching Times
Low Side Switching Times
Low Side Switching Times
V
C
= 300 V, V = V = 15 V
ms
ms
ms
ON
PN
CC
BS
I
= 50 A
t
C(ON)
V
IN
= 0 V ↔ 5 V, Ls = 55 nH,
Inductive Load
T = 125°C (Notes 4, 5)
t
OFF
J
t
C(OFF)
trr
LS
t
V
C
= 300 V, V = V = 15 V
CC BS
ON
PN
I
= 50 A
t
C(ON)
V
IN
= 0 V ↔ 5 V, Ls = 55 nH,
Inductive Load
T = 25°C (Notes 4, 5)
t
OFF
J
t
C(OFF)
t
rr
t
V
C
= 300 V, V = V = 15 V
CC BS
ON
PN
I
= 50 A
t
C(ON)
V
IN
= 0 V ↔ 5 V, Ls = 55 nH,
Inductive Load
T = 125°C (Notes 4, 5)
t
OFF
J
t
C(OFF)
trr
SCWT
Short Circuit Withstand Time
(Note 6)
V
CC
= V = 15 V, V = 450 V,
ms
BS
PN
T = 25°C, Non−repetitive
J
I
Collector−Emitter Leakage
Current for IGBT and Diode
in Parallel
T = 25°C, V = 650 V
−
−
3
−
mA
CES
J
CE
T = 125°C, V = 650 V
150
1500
mA
J
CE
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FAM65V05DF1
ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter
Test Conditions
Min
Typ
Max
Unit
CONTROL PART (T = −40°C to 150°C, unless otherwise specified, typical values specified at T = 125°C)
J
J
I
Quiescent V Supply Current
V
= 15 V,
(UL, VL, WL)
V
− COM
−
−
−
−
−
−
5
mA
mA
QCCL
CC
CC
IN
CC(L)
= 0 V
= 0 V
I
V
= 15 V,
(UH, VH, WH)
V
CC(H)
− COM
150
0.30
QCCH
CC
IN
I
Operating V Supply Current
V
PWM
= 15 V
V
V
V
– COM
– COM
– COM
mA
PCCH
CC
CC(UH, VH, WH)
CC(UH)
CC(VH)
CC(WH)
f
= 20 kHz
Duty = 50%, applied to
one PWM signal input
for high−side
I
V
PWM
= 15 V
V
CC(L)
– COM
−
−
8.5
mA
QCCL
CC(UH, VH, WH)
f
= 20 kHz
Duty = 50%, applied to
one PWM signal input
for low−side
I
Quiescent V Supply Current
V
= 15 V,
(UH, VH, WH)
V
V
V
− V
−
−
−
−
150
4.5
mA
QBS
BS
BS
B(U)
B(V)
B(W)
S(U)
S(V)
S(W)
IN
= 0 V
−V
− V
I
Operating V Supply Current
V
CC
= V = 15 V
V
B(U)
V
B(V)
V
B(W)
− V
mA
PBS
BS
BC
S(U)
−V
S(V)
IN
= 0 V
(UH, VH, WH)
− V
S(W)
V
Fault Output Voltage
V
V
V
= 0 V, V Circuit: 4.7 kW to 5 V Pull−up
4.5
−
−
−
−
V
V
V
V
V
V
V
ms
V
FOH
SC
SC
CC
FO
V
= 1 V, V Circuit: 4.7 kW to 5 V Pull−up
0.5
0.59
13.2
13.8
13
FOL
FO
V
SC(ref)
Short−Circuit Trip Level
= 15 V (Note 7)
C
−COM
SC
0.45
10.6
11.0
10.5
10.8
−
0.52
−
UV
Supply Circuit Under−
Voltage Protection
Detection Level, T = 125°C
J
CCD
CCR
BSD
BSR
UV
UV
UV
Reset Level, T = 125°C
−
J
Detection Level, T = 125°C
−
J
Reset Level, T = 125°C
−
13.3
−
J
t
Fault−out Pulse Width
60
2.4
FOD
V
LVIC Temperature Sensing
Voltage Output
V
CC(L)
= 15 V, T =125°C (Note 8)
LVIC
−
−
TS
V
ON Threshold Voltage
OFF Threshold Voltage
Applied between IN
, IN
, IN ,
(VH) (WH)
−
2.6
1.2
3.1
V
V
IN(ON)
(UH)
IN
, IN
, IN
– COM
(UL)
(VL)
(WL)
V
0.9
−
IN(OFF)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. t and t
include the propagation delay time of the internal drive IC. t
and t
are the switching times of IGBT itself under the
ON
OFF
C(ON)
C(OFF)
given gate driving condition internally. Refer to Figure 6 for detailed information.
5. Stray inductance Ls is sum of stray inductance of module & setup.
6. Verified by design and bench−testing only.
7. Short−circuit current protection is functional only for low side.
8. T
is the junction temperature of the LVIC itself.
LVIC
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
FAM65V05DF1
FAM65V05DF1
ASPM27−CCA
10 Units/Tube
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FAM65V05DF1
HINx
LINx
t
rr
t
off
t
on
100% I
Cx
I
Cx
90% I
Cx
10% V
10% V
CEx
10% I
CEx
10% I
Cx
Cx
V
CEx
t
t
c(on)
c(off)
Figure 5. Switching Time Definition
Figure 6. Switching Evaluation Circuit
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FAM65V05DF1
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Supply Voltage
Conditions
Min
−
Max
450
15
Max
500
Unit
V
V
Applied between P − N , N , N
U V W
PN
CC
V
Control Supply Voltage
Applied between V
Applied between V
, V
− COM
13.5
13.3
16.5
18.5
V
CC(H) CC(L)
V
BS
High−side Bias Voltage
− V
,
15
V
B(U)
S(U)
− V
S(V) B(W) S(W)
V
B(V)
− V
, V
dV /dt,
Control Supply Variation
−1
−
1
V/ms
CC
dV /dt
BS
t
Blanking Time for Preventing Arm−short
PWM Input Signal
For Each Input Signal
T = 125°C
C
1.0
−
−
−
−
−
20
4
ms
kHz
V
dead
f
PWM
V
Voltage for Current Sensing
Applied between N , N , N
W
−4
SEN
U
V
– COM (Including surge voltage)
T
J
Junction Temperature
−40
−
150
°C
MECHANICAL CHARACTERISTICS AND RATINGS
Limits
Typ
0.62
−
Parameter
Mounting Torque
Conditions
Conditions
Recommended 0.62 N⋅m
Min
0.52
−
Max
0.80
+150
−
Unit
N⋅m
mm
g
Mounting Screw: − M3
Device Flatness
Weight
−
15
Figure 7. Flatness Measurement Position
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FAM65V05DF1
TYPICAL INVERTER CHARACTERISTICS
100
100
90
80
70
60
50
40
30
20
10
0
T = 25°C
T = 25°C
J
J
90
T = 125°C
T = 125°C
J
J
80
T = 150°C
J
T = 150°C
J
70
60
50
40
30
20
10
0
0
1
2
3
4
0
1
2
3
4
V
CE
(V)
V
CE
(V)
Figure 8. Output Characteristics IGBT Inverter
(Typical)
Figure 9. Forward Characteristics DIODE Inverter
(Typical)
VCC = VBS = 15 V, VIN = 5 V
VIN = 0 V
18.00
18.00
EON, VPN = 450 V
EOFF, VPN = 450 V
EON, VPN = 300 V
EOFF, VPN = 300 V
EON, VPN = 450 V
EOFF, VPN = 450 V
EON, VPN = 300 V
EOFF, VPN = 300 V
16.00
14.00
12.00
10.00
8.00
16.00
14.00
12.00
10.00
8.00
6.00
6.00
4.00
4.00
2.00
2.00
0.00
0.00
0
20
40
60
80
100
0
20
40
60
80
100
I , Collector Current (A)
C
I , Collector Current (A)
C
Figure 10. Switching Losses IGBT Inverter High−Side
Figure 11. Switching Losses IGBT Inverter Low−Side
(Typical) versus Collector Current
(Typical) versus Collector Current
V
CC = VBS = 15 V
V
CC = VBS = 15 V
V
IN = 0 V ↔ 5 V, Ls = 55 nH, Inductive Load, TJ = 125°C
VIN = 0 V ↔ 5 V, Ls = 55 nH, Inductive Load, TJ = 125°C
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FAM65V05DF1
TYPICAL INVERTER CHARACTERISTICS (continued)
175
150
0.50
0.40
0.30
0.20
0.10
0.00
ERR, VPN = 450 V, HS
ERR, VPN = 450 V, LS
ERR, VPN = 300 V, HS
ERR, VPN = 300 V, LS
IC Module
125
IC Chip
100
75
50
25
0
0
20
40
60
80
100
0
100
200
300
400
500
600
700
V
CE
(V)
I , Forward Current (A)
F
Figure 12. Reverse Recovery Energy DIODE Inverter
(Typical) versus Forward Current
VCC = VBS = 15 V
Figure 13. Reverse Bias Safe Operating Area IGBT
(RBSOA) Inverter
VCC = VBS = 15 V, Tj = 150°C
V
IN = 0 V ↔ 5 V, Ls = 55 nH, Inductive Load, TJ = 125°C
1.00
1.00
ZthJC DIODE
ZthJC IGBT
0.10
0.10
0.01
i:
1
2
3
4
i:
1
2
3
4
0.05
ri [°C/W]: 0.0070
t [s]:
0.1389 0.2439 0.1411
1.31e−4 2.09e−3 5.86e−
ri [°C/W]: 0.0264
0.0615 0.132
5.8e−5 1.25e−3 5.14e−3
1.05e−5
t [s]:
0.0001
6.04e−6
0.01
0.0001
0.001
0.01
0.1
1
0.001
0.01 0.1
1
Time Duration (s)
Time Duration (s)
Figure 14. Transient Thermal Impedance IGBT
Inverter
Figure 15. Transient Thermal Impedance DIODE
Inverter
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FAM65V05DF1
TYPICAL CONTROLLER CHARACTERISTICS
3.50
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
VTS
VIN(ON)
VIN(OFF)
3.00
2.50
2.00
1.50
1.00
0.50
50
80
140
50
80
140
−40
−10
20
110
−40
−10
20
110
TJ (5C)
TJ (5C)
Figure 16. Temperature Profile of VTS (Typical)
Figure 17. Threshold Voltage versus Temperature
12.40
12.80
UVCCD
UVCCR
UVBSD
UVBSR
12.60
12.40
12.20
12.00
11.80
12.20
12.00
11.80
11.60
11.40
11.20
11.00
11.60
11.40
11.20
50
80
140
−40
−10
20
110
50
80
140
−40
−10
20
110
TJ (5C)
TJ (5C)
Figure 18. Supply Under−Voltage Protection
High−Side (Typical)
Figure 19. Supply Under−Voltage Protection
Low−Side (Typical)
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FAM65V05DF1
TIMING CHART PROTECTIVE FUNCTION
Lower arms
control input
A6
A7
Protection
circuit state
SET
A4
RESET
Lower arms
gate input
A3
A2
SC
A1
Output Current
Sensing Voltage
A8
SC Reference Voltage
t
FOD
Fault Output Signal
A5
Step
Description
Normal operation. IGBT on and carrying current
A1
A2
A3
A4
A5
A6
A7
A8
Short−circuit current threshold reached
Protection function triggered
IGBT turns off with soft turn−off
Fault output activated (initial delay 2 ms, t
min. 50 ms)
FOD
IGBT “LO” input
IGBT “HI” input is ignored
Current stays at zero during fault state
Figure 20. Short−Circuit Current Protection
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FAM65V05DF1
Input Signal
Protection Circuit
State
RESET
SET
RESET
Filtering
UV
CCR
B1
B6
Control
Supply Voltage
UV
B3
B4
CCD
B2
B7
Restart
Output Current
High−level (no fault output)
B5
Fault Output Signal
Step
Description
Control supply voltage rises above reset voltage UV
Normal operation. IGBT on and carrying current
B1
B2
B3
B4
B5
B6
B7
CCR
Control supply voltage falls below detection voltage UV
CCD
Filtered supply voltage falls below UV
and IGBT turns off
CCD
Fault output activated (initial delay 2 ms, t
min. 50ms)
FOD
Control supply voltage rises above reset voltage UV
CCR
IGBT “HI” input is followed after fault output duration and supply voltage rise
Figure 21. Under−Voltage Protection (Low−side)
Input Signal
Protection Circuit
State
RESET
C1
SET
RESET
Filtering
UV
BSR
C5
Control
Supply Voltage
UV
C3
C4
BSD
C2
C6
Restart
Output Current
Fault Output Signal
Step
Description
Control supply voltage rises above reset voltage UV
Normal operation. IGBT on and carrying current
C1
C2
C3
C4
C5
C6
CCR
Control supply voltage falls below detection voltage UV
CCD
Filtered supply voltage falls below UVCCD and IGBT turns off
Control supply voltage rises above reset voltage UV
CCR
IGBT “HI” input is followed after supply voltage rise
Figure 22. Under−Voltage Protection (High−side)
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14
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
27LD MODULE PDD STD
CASE MODCB
ISSUE A
DATE 30 JAN 2023
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DOCUMENT NUMBER:
DESCRIPTION:
98AON13500G
27LD MODULE PDD STD
PAGE 1 OF 1
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