FAM04V18DT1 [ONSEMI]
Automotive Power Module (APM), Automotive, 3-Phase, MOSFET;
| 型号： | FAM04V18DT1 |
| 厂家： | 
ONSEMI |
| 描述： | Automotive Power Module (APM), Automotive, 3-Phase, MOSFET |
| 文件： | 总9页 (文件大小：732K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
3 Phase Inverter Automotive
Power Module
FAM04V18DT1
Features
• Full Bridge Inverter for Variable Speed Motor Drive
• Temperature Sensing
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• R−C Snubber Circuits for each MOSFET
• Electrically Isolated DBC Substrate for Low Rthjc
• Compact Design for Low Total Module Resistance
• Module Serialization for Full Traceability
• Lead Free, RoHS and UL94 V−0 Compliant
• Automotive Qualified
• This Device is Pb−Free and is RoHS Compliant
APM20CBB / 20LD,
CASE MODFZ
Applications
• 12 V Motor Control
• Brake System, Electrical Streering, Turbo Charger
Benefits
ORDERING INFORMATION
• Enable Design of Small, Efficient and Reliable System for Reduced
See detailed ordering and shipping information on page 2 of
this data sheet.
Vehicle Fuel Consumption and CO Emission
2
• High Current Application
• Low Thermal Resistance
• Simplified Vehicle Assembly
• High EMI Performance
Figure 1. Pin Configuration
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
May, 2020 − Rev. 0
FAM04V18DT1/D
FAM04V18DT1
Table 1. ORDERING INFORMATION
Pb−Free
Operating
and RoHS Compliant
Temperature Range
Part Number
Package
APM20−CBB
Packing Method
FAM04V18DT1
Yes
−40C ∼ 125°C
Tube
Table 2. PIN DESCRIPTION
Pin No.
1
Pin Name
Pin Descriptions
NTC+
NTC−
NTC Thermistor Terminal 1
2
NTC Thermistor Terminal 2
3
U_DN
Gate of Q4
4
U_UP
Gate of Q1
5
U_SENSE
V_DN
Sense Pin for Source of Q1 and Drain of Q4
6
Gate of Q5
7
V_UP
Gate of Q2
8
NC
Not used
9
V_SENSE
W_DN
W_UP
NC
Sense Pin for Source of Q2 and Drain of Q5
10
11
12
13
14
15
16
17
18
19
20
Gate for Q6
Gate for Q3
Not used
W_SENSE
V_LINK
B−_SENSE
B−
Sense Pin for Source of Q3 and Drain of Q6
Sense Pin for Battery Voltage and Drain of High Side MOSFETs
B− Sense
Battery−
B+
Battery+
W Phase
V Phase
U Phase
W Phase Power lead
V Phase Power lead
U Phase Power lead
Block Diagram
V−link
Q1
B+
C1
R1
C2
Q2
Q5
Q3
Q6
C3
R3
V_up
U_up
W_up
R2
U_sense
V_sense
W_sense
NTC
U
V
W
C7
C4
R4
C5
R5
C6
R6
Q4
U_dn
V_dn
W_dn
B−_sense
B−
Figure 2. Schematic
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2
FAM04V18DT1
Flammability Information
Solder
All materials present in the power module meet UL
flammability rating class 94 V−0.
Solder used is a lead free SnAgCu alloy.
Compliance to RoHS directives
The power module is 100% lead free and RoHS compliant
2000/53/C directive.
Table 3. ABSOLUTE MAXIMUN RATINGS (T = 25°C, Unless Otherwise Specified)
J
Symbol
Parameter
Rating
40
Unit
V
V
V
(Q1~Q6)
(Q1~Q6)
(Q1~Q6)
Drain to Source Voltage
Gate to Source Voltage
DS
20
V
GS
E
Single Pulse Avalanche Energy (Note 1)
Maximum Junction Temperature
Storage Temperature
1466
mJ
°C
°C
AS
T
J
175
T
STG
−40 ~ +125
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 4. ELECTRICAL SPECIFICATIONS (T = 25°C, Unless Otherwise Specified)
J
Parameter
Conditions
= 250 μA, V = 0 V
Min
Typ
Max
Units
B
VDSS
Drain−to−Source Breakdown
I
D
40
V
GS
Voltage
V
Gate to Source Threshold Voltage
V
= V , I = 250 mA
2
4
V
V
GS(th)
GS
DS
D
V
Source−to−Drain Diode Voltage
I
= 80 A, V = 0 V
1.1
0.85
SD
SD
GS
R
R
R
R
R
R
Q1
Q2
Q3
Q4
Q5
Q6
Q1 Inverter High Side MOSFETs
(Note 2)
V
= 10 V, I = 80 A
0.60
0.53
0.45
1.03
0.90
0.77
mΩ
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
GS
D
Q2 Inverter High Side MOSFETs
(Note 2)
V
= 10 V,I = 80 A
0.75
0.65
1.48
1.28
1.25
mΩ
mΩ
mΩ
mΩ
mΩ
GS
GS
GS
GS
GS
D
Q3 Inverter High Side MOSFETs
(Note 2)
V
V
V
V
= 10 V, I = 80 A
D
Q4 Inverter Low Side MOSFETs
(Note 2)
= 10 V, I = 80 A
D
Q5 Inverter Low Side MOSFETs
(Note 2)
= 10 V, I = 80 A
D
Q6 Inverter Low Side MOSFETs
(Note 2)
= 10 V, I = 80 A
D
I
Gate−to−Source Leakage Current
Drain−to−Source Leakage Current
V
=
20 V, V = 0 V
−100
+100
2
nA
GSS
GS
DS
I
V
= 40 V, V = 0 V
μA
DSS
DS
GS
Total loop resistance, Total Module RDS(ON):
V
GS
= 10 V, I = 80 A
2.36
3.4
mΩ
D
Vbatt(+) → Phase → GND(−)
Switching
Characteristics
V = 10 V, V = 14 V, I = 30 A
GS DD D
Tdon, Turn−on delay time
Tr, Rise time
500
400
nS
nS
nS
nS
Tdoff, Turn−off delay time
Tf, Fall time
1000
400
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Starting T = 25°C, L = 0.47 mH, I = 79 A, V = 40 V during inductor charging and V = 0 V during time in avalanche.
J
AS
DD
DD
2. All MOSFETs (bare die) have same die size and Rdson level, The different Rdson values listed in the datasheet are due to the different access
points available inside the module for Rdson measurement.
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3
FAM04V18DT1
Table 5. TEMPERATURE SENSE (NTC THERMISTOR)
Parameter
Test Conditions
Min
Max
Units
Resistance
Current = 1 mA
7.5
13
kΩ
Table 6. MOSFETS RDSON MEASUREMENT PATHS
+ Force
B+
− Force
U phase
Pin 20
+ Sense
Vlink
− Sense
U sense
Pin 5
+ Force
U phase
Pin 20
− Force
B−
+ Sense
U sense
Pin 5
− Sense
Q1
Q2
Q3
Q4
Q5
Q6
B− sense
Pin 15
Pin 17
B+
Pin 14
Vlink
Pin 16
B−
V phase
Pin 19
V sense
Pin 9
V phase
Pin 19
V sense
Pin 9
B− sense
Pin 15
Pin 17
B+
Pin 14
Vlink
Pin 16
B−
W phase
Pin 18
W sense
Pin 13
W phase
Pin 18
W sense
Pin 13
B− sense
Pin 15
Pin 17
Pin 14
Pin 16
Gate Points
Force Points
Sense Points
Figure 3.
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4
FAM04V18DT1
Table 7. MODULE RDSON MEASUREMENT PATHS
+ Force
B+
− Force
U phase
Pin 20
+ Sense
B+
− Sense
U phase
Pin 20
+ Force
U phase
Pin 20
− Force
B−
+ Sense
U phase
Pin 20
− Sense
B−
Q1
Q2
Q3
Q4
Q5
Q6
Pin 17
B+
Pin 17
B+
Pin 16
B−
Pin 16
B−
V phase
Pin 19
V phase
Pin 19
V phase
Pin 19
V phase
Pin 19
Pin 17
B+
Pin 17
B+
Pin 16
B−
Pin 16
B−
W phase
Pin 18
W phase
Pin 18
W phase
Pin 18
W phase
Pin 18
Pin 17
Pin 17
Pin 16
Pin 16
Gate Points
Force Points
Sense Points
Figure 4.
Table 8. THERMAL RESISTANCE
Parameters
Min
Typ
0.69
Max
0.97
Unit
Rthjc
Q1−Q6 Thermal Resistance J−C
−
C/W
Thermal Resistance Junction to case,
Single Inverter FET
Table 9. ISOLATION VOLTAGE (Isolation Voltage between DBC Bottom Surface and All Module Pins)
Test
Test Conditions
Min
Max
Unit
μA
Leakage @
VAC = 3 kV
−
300
Isolation Voltage
(Hi−Pot)
Frequency = 50 Hz
Test Time = 1 s
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5
FAM04V18DT1
Table 10. REFERENCE TYPICAL CHARACTERISTICS FOR DISCRETE MOSFET FDBL9401_F085,
USED IN HIGH SIDE AND LOW SIDE MOSFETS OF THIS MODULE
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
B
Drain−to−Source Breakdown Voltage
Drain−to−Source Leakage Current
I
= 250 μA, V = 0 V
40
−
−
−
−
−
−
1
V
VDSS
D
GS
I
V
= 40 V
= 0 V
20 V
T = 25°C
μA
mA
nA
DSS
DS
J
V
T = 175°C (Note 3)
J
−
1
GS
I
Gate−to−Source Leakage Current
V
V
=
−
100
GSS
GS
ON CHARACTERISTICS
V
R
Gate to Source Threshold Voltage
Drain to Source On Resistance
= V I = 250 μA
DS, D
2.0
−
3.0
4.0
V
GS(th)
GS
I
D
= 80 A
T = 25°C
J
0.50
0.86
0.65
1.10
mΩ
mΩ
DS(on)
V
GS
= 10 V
T = 175°C (Note 3)
J
−
DYNAMIC CHARACTERISTICS
V
= 25 V, V = 0 V
GS
C
Input Capacitance
−
−
−
−
−
−
−
−
15900
4025
604
2.6
−
−
−
−
−
−
−
−
pF
pF
pF
Ω
DS
iss
f = 1 MHz
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Gate Resistance
rss
R
f = 1 MHz
= 20 V
g
V
Q
Total Gate Charge at 10 V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
V
= 0 to 10
220
29
nC
nC
nC
nC
DD
g(ToT)
GS
I
= 80 A
D
Q
= 0 to 2 V
g(th)
GS
Q
73
gs
gd
Q
41
SWITCHING CHARACTERISTICS
V
DD
V
GS
= 20 V, I = 80 A
D
t
Turn−On Time
Turn−On Delay
Rise Time
−
−
−
−
−
−
−
54
82
106
52
−
221
−
ns
ns
ns
ns
ns
ns
on
= 10 V, R
= 6 Ω
GEN
t
t
d(on)
t
r
−
Turn−Off Delay
Fall Time
−
d(off)
t
f
−
t
Turn−Off Time
215
off
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Voltage
I
= 80 A, V = 0 V
−
−
−
−
−
−
1.25
1.2
V
V
SD
SD
GS
I
= 40 A, V = 0 V
GS
SD
I = 80 A, dl /dt = 100 A/μs
t
Reverse Recovery Time
119
228
133
274
ns
nC
F
SD
rr
V
= 32 V
DD
Q
Reverse Recovery Charge
rr
3. The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production.
J
Table 11. COMPONENTS
Component
Size
Maker
Remarks
1
MOSFET
PT8 40 V
PT8 40 V, bare die used
6ea
260 x 145 mil
ON
AEC Q101
qualified by
FDBL9401_F085
in FDBL9401
Semiconductor
2
3
4
5
R1, 2, 3, 4,
5, 6
Resistors
Capacitors
Capacitor
Thermistor
1406 10 Ω 200 mV 1%
8200 pF 50 V 5%
6ea
6ea
1ea
1ea
2200 x 1100
Vishay
Murata
Murata
Murata
AEC Q200
qualified
[μm]
C1, 2, 3, 4,
5, 6
2000 x 1250
AEC Q200
qualified
[μm]
C7
1206 100 nF 100 V 10%
2010 x 1250
AEC Q200
qualified
[μm]
NTC
NCP18XH103F0SRB −
10 kW
1600 x 800
AEC Q200
qualified
[μm]
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6
FAM04V18DT1
Mechanical Characteristics and Ratings
Figure 5.
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7
FAM04V18DT1
PACKAGE DIMENSIONS
APM20CBB / 20LD, PDD STD, R−EPS MODULE
CASE MODFZ
ISSUE A
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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