ESDM1051MX4T5G [ONSEMI]
5.5v 微型封装二极管，用于 ESD 防护;
| 型号： | ESDM1051MX4T5G |
| 厂家： | 
ONSEMI |
| 描述： | 5.5v 微型封装二极管，用于 ESD 防护 局域网 测试 二极管 |
| 文件： | 总7页 (文件大小：403K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
5.5V ESD Protection Diodes
Micro−packaged Diodes for ESD
Protection
ESDM1051
The ESDM1051 Series is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
smartphone, smart−watch, or many other portable / wearable
applications where board space comes at a premium.
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Features
X4DFN2 (01005)
CASE 718AA
• Low Capacitance (22 pF Typ, I/O to GND)
• Small Body Outline Dimensions − 01005 Size: 0.445 x 0.240 mm
• Protection for the Following IEC Standards:
IEC 61000−4−2 (Level 4)
MARKING DIAGRAM
LM
• Low ESD Clamping Voltage
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
L
= Specific Device Code
M = Date Code
Compliant
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
PIN CONFIGURATION
AND SCHEMATIC
Rating
Symbol
Value
−55 to +125
−55 to +150
260
Unit
°C
Operating Junction Temperature Range
Storage Temperature Range
T
J
T
stg
°C
1
2
Lead Solder Temperature −
T
L
°C
Maximum (10 Seconds)
ESDM1051:
IEC 61000−4−2 Contact
IEC 61000−4−2 Air
ESD
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
30
30
kV
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See Application Note AND8308/D for further description of
survivability specs.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
March, 2021 − Rev. 0
ESDM1051/D
ESDM1051
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
A
Parameter
Symbol
Conditions
Min
Typ
Max
5.5
8.2
0.1
Unit
V
Reverse Working Voltage
Breakdown Voltage
V
RWM
I/O Pin to GND
I = 1 mA, I/O Pin to GND
V
BR
6.1
6.8
V
T
Reverse Leakage Current
I
R
V
= 5.5 V, I/O Pin to GND
RWM
mA
V
Clamping Voltage
TLP (Note 1)
V
C
7.5
8.4
I
PP
= 8 A
IEC 61000−4−2 Level 2 equivalent
( 4 kV Contact, 8 kV Air)
I
= 16 A
PP
IEC 61000−4−2 Level 2 equivalent
( 8 kV Contact, 16 kV Air)
Reverse Peak Pulse Current
Clamping Voltage
I
IEC61000−4−5 (8x20 ms)
= 11 A, (8/20 ms pulse)
11
13
8.0
0.11
22
A
V
PP
V
I
PP
8.8
25
C
Dynamic Resistance
Junction Capacitance
R
100 ns TLP Pulse
= 0 V, f = 1 MHz
W
DYN
C
V
R
pF
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z = 50 W, t = 100 ns, t = 1 ns, averaging window; t = 70 ns to t = 90 ns.
0
p
r
1
2
ORDERING INFORMATION
Device
†
Package
Shipping
ESDM1051MX4T5G
X4DFN2 (01005)
10,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
ESDM1051
TYPICAL CHARACTERISTICS
30
25
20
15
10
5
10
5
0
−5
−10
−15
−20
−25
−30
0
−5
−10
−20
0
20
40
60
80
100 120 140
−20
0
20
40
60
80
100 120 140
Time (ns)
Time (ns)
Figure 1. ESD Clamping Voltage
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage
Negative 8 kV Contact per IEC61000−4−2
20
18
16
14
12
10
10
9
−20
10
9
−18
−16
−14
−12
−10
8
8
7
7
6
6
5
5
8
6
4
2
0
4
3
2
1
0
−8
−6
−4
−2
0
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14
V
CTLP
(V)
V
CTLP
(V)
Figure 3. Positive TLP I−V Curve
Figure 4. Negative TLP I−V Curve
10
10
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14
I
PK
(A)
I
PK
(A)
Figure 5. Positive Clamping Voltage vs. Peak
Figure 6. Negative Clamping Voltage vs. Peak
Pulse Current (tp = 8/20 ms)
Pulse Current (tp = 8/20 ms)
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3
ESDM1051
TYPICAL CHARACTERISTICS
1E−03
1E−04
1E−05
1E−03
1E−04
1E−05
1E−06
1E−07
1E−06
1E−07
1E−08
1E−09
1E−08
1E−09
1E−10
1E−11
1E−12
1E−10
1E−11
−11−10 −9 −8 −7 −6 −5 −4 −3 −2 −1
0
1
2
3
4
5
6
7
8
9
10 11
−11−10 −9 −8 −7 −6 −5 −4 −3 −2 −1 0 1 2 3 4 5 6 7 8 9 10 11
V
R
(V)
V
R
(V)
Figure 7. Breakdown Voltage
Figure 8. Reverse Leakage Current
30
25
20
15
10
5
0
−6 −5 −4 −3 −2 −1
0
1
2
3
4
5
6
V
BIAS
(V)
Figure 9. Line Capacitance, f = 1 MHz
0.0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
−1.6
−1.8
−2.0
−2.2
−2.4
−2.6
−2.8
−3.0
1.0E+06
1.0E+07
1.0E+08
Frequency (Hz)
Figure 10. Magnitude vs. Frequency
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4
ESDM1051
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
I
peak
First Peak
Current
(A)
100%
90%
Test Volt-
age (kV)
Current at
30 ns (A)
Current at
60 ns (A)
Level
1
2
3
4
2
4
6
8
7.5
15
4
8
2
4
6
8
I @ 30 ns
22.5
30
12
16
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
Figure 11. IEC61000−4−2 Spec
50 W Coax
Cable
Transmission Line Pulse (TLP) Measurement
L
Attenuator
S
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 12. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 13 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels.
÷
50 W Coax
Cable
I
M
V
M
10 MW
DUT
V
C
Oscilloscope
Figure 12. Simplified Schematic of a Typical TLP
System
Figure 13. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
X4DFN2, 0.445x0.24, 0.27P
CASE 718AA
ISSUE A
DATE 21 MAR 2017
SCALE 10:1
A
B
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
MILLIMETERS
PIN 1
REFERENCE
DIM MIN
NOM MAX
E
A
A1
b
D
E
e
0.15
−−−
0.18
0.21
0.03
TOP VIEW
−−−
0.170 0.185 0.200
0.415 0.445 0.475
0.210 0.240 0.270
0.270 BSC
A
0.03
0.03
C
C
L
0.105 0.120 0.135
A1
SEATING
PLANE
GENERIC
MARKING DIAGRAMS*
C
SIDE VIEW
X
X
e
e/2
2X b
2
X
= Specific Device Code
PIN 1
2X L
*This information is generic. Please refer to
device data sheet for actual part marking.
Some products may not follow the Generic
Marking.
0.10 C A B
NOTE 3
0.05 C
BOTTOM VIEW
RECOMMENDED
MOUNTING FOOTPRINT*
2X
0.21
0.27
PITCH
1
2X
0.13
DIMENSIONS: MILLIMETERS
See Application Note AND8398/D for more mounting details
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON29067G
X4DFN2, 0.445X0.24, 0.27P
PAGE 1 OF 1
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