ES2C [ONSEMI]

2.0A超快速恢复整流器;
ES2C
型号: ES2C
厂家: ONSEMI    ONSEMI
描述:

2.0A超快速恢复整流器

功效 光电二极管
文件: 总5页 (文件大小:146K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.com  
Fast Rectifiers  
ES2A-ES2D  
SMB  
CASE 403AF  
Features  
For Surface Mount Applications  
GlassPassivated Junction  
LowProfile Package  
MARKING DIAGRAM  
Easy Pick and Place  
Builtin Strain Relief  
Superfast Recovery Times for High Efficiency  
These are PbFree Devices  
ZYWW  
ES2x  
(COLOR BAND DENOTES CATHODE)  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Z
Y
= Assembly Plant Code  
= Year  
Symbol  
Parameter  
Value  
Unit  
WW  
ES2x  
= Work Week  
= Specific Device Code  
x = A, B, C, D  
V
RRM  
Maximum Repetitive Reverse Voltage  
V
ES2A  
ES2B  
ES2C  
ES2D  
50  
100  
150  
200  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 3  
of this data sheet.  
I
Average Rectified Forward Current,  
2.0  
A
A
F(AV)  
0.375Lead Length at T = 115°C  
L
I
NonRepetitive Peak Forward Surge  
Current, 8.3 ms Single HalfSine Wave  
50  
FSM  
T
Storage Temperature Range  
55 to +150  
55 to +150  
°C  
°C  
STG  
T
J
Operating Junction Temperature Range  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Symbol  
Parameter  
Value  
1.66  
75  
Unit  
W
P
D
Power Dissipation  
R
Thermal Resistance,  
Junction to Ambient (Note 1)  
°C/W  
θ
JA  
R
Thermal Resistance,  
Junction to Lead (Note 1)  
20  
°C/W  
θ
JL  
1. Device mounted on FR4 PCB 0.013 mm.  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Value  
ES2A  
ES2B  
ES2C  
ES2D  
Symbol  
Parameter  
Maximum Forward Voltage  
Reverse Recovery Time  
Test Conditions  
I = 2.0 A  
Unit  
V
V
F
0.90  
20  
F
t
rr  
I = 0.5 A, I = 1.0 A,  
ns  
F
RR  
R
I
= 0.25 A  
I
Maximum Reverse Current at Rated V  
T = 25_C  
10  
mA  
R
R
A
350  
T = 100_C  
A
C
Total Capacitance  
V
R
= 4.0 V, f = 1.0 MHz  
18  
pF  
T
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
© Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
April, 2022 Rev. 2  
ES2D/D  
 
ES2AES2D  
TYPICAL PERFORMANCE CHARACTERISTICS  
50  
2.5  
2.0  
1.5  
1.0  
0.5  
0
T = 25°C  
Pulse Width = 300 ms  
2% Duty Cycle  
A
10  
1
Single Pulse  
Half Wave  
60 Hz  
Resistive or Inductive Load  
0.375(9.0 mm) Lead Lengths  
0.1  
0.01  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
0
20  
40  
60  
80 100 120 140 160  
Lead Temperature (5C)  
V , Forward Voltage (V)  
F
Figure 1. Forward Current Derating Curve  
Figure 2. Foward Voltage Characteristics  
60  
50  
1000  
100  
10  
T = 100°C  
A
40  
30  
20  
T = 75°C  
A
T = 25°C  
A
1
10  
0
0.1  
1
10  
100  
0
20  
40  
60  
80  
100  
120  
140  
Number of Cycles at 60 Hz  
Percent of Rated Peak Reverse Voltage (%)  
Figure 3. NonRepetitive Surge Current  
Figure 4. Reverse Current vs. Reverse Voltage  
60  
50  
40  
30  
20  
10  
0
0.1  
1
10  
100  
500  
V , Reverse Voltage (V)  
R
Figure 5. Total Capacitance  
www.onsemi.com  
2
ES2AES2D  
50 W  
50 W  
noninductive  
noninductive  
t
rr  
+0.5 A  
()  
DUT  
Pulse  
Generator  
(Note 3)  
0
50 V  
(approx)  
0.25 A  
(+)  
50 W  
noninductive  
Oscilloscope  
(Note 2)  
1.0 A  
Set Time Base for  
5/10 ns/cm  
NOTES:  
1.0 cm  
2. Rise time = 7.0 ns max; Input impedance = 1.0 MW 22 pF.  
3. Rise time = 10 ns max; Source impedance = 50 W.  
Figure 6. Reverse Recovery Time Characteristic and Test Circuit Diagram  
ORDERING INFORMATION  
Part Number  
Device Code Marking  
Package Type  
Shipping  
ES2A  
ES2A  
SMB  
3000 / Tape & Reel  
3000 / Tape & Reel  
3000 / Tape & Reel  
3000 / Tape & Reel  
(PbFree)  
ES2B  
ES2C  
ES2D  
ES2B  
ES2C  
ES2D  
SMB  
(PbFree)  
SMB  
(PbFree)  
SMB  
(PbFree)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.com  
3
 
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SMB  
CASE 403AF  
ISSUE O  
DATE 31 AUG 2016  
5.60  
5.08  
M
B
B
0.13  
C B A  
2.50  
3.95  
3.30  
2.20  
1.91  
B
2.20  
4.70  
4.75  
4.05  
B
LAND PATTERN RECOMMENDATION  
A
8°  
0°  
2.65 MAX  
A
R0.15 4X  
GAUGE  
PLANE  
2.45  
1.90  
0.45  
0.41  
0.15  
0.30  
0.05  
0.203  
0.050  
8°  
0  
B
C
2.15  
1.65  
1.60  
0.75  
M
0.13  
C B A  
DETAIL A  
SCALE 20 : 1  
NOTES:  
A. EXCEPT WHERE NOTED CONFORMS TO  
JEDEC DO214 VARIATION AA.  
B
DOES NOT COMPLY JEDEC STD. VALUE.  
C. ALL DIMENSIONS ARE IN MILLIMETERS.  
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,  
MOLD FLASH AND TIE BAR PROTRUSIONS.  
E. DIMENSION AND TOLERANCE AS PER ASME  
Y14.51994.  
F. LAND PATTERN STD. DIOM5336X240M.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13441G  
SMB  
PAGE 1 OF 1  
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
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rights of others.  
© Semiconductor Components Industries, LLC, 2019  
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
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TECHNICAL PUBLICATIONS:  
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