EMI8033 [ONSEMI]
Common Mode Filter with ESD Protection;型号: | EMI8033 |
厂家: | ONSEMI |
描述: | Common Mode Filter with ESD Protection |
文件: | 总9页 (文件大小:250K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Common Mode Filter with
ESD Protection
3 750 MHz Common Mode Stop Band
Attenuation for MIPI D−PHY Interfaces
EMI803x Series
www.onsemi.com
Functional Description
The EMI803x is a family of Common Mode Filters (CMF) with
integrated ESD protection, a first in the industry. Differential signaling
I/Os can now have both common mode filtering and ESD protection in
one package. The EMI803x protects against ESD pulses up to 15 kV
contact per the IEC61000−4−2 standard.
XDFN6
CASE 711AY
XDFN10
CASE 711AX
XDFN16
CASE 711AZ
The EMI803x is well−suited for protecting systems using
high−speed differential ports such as MIPI D−PHY; corresponding
ports in removable storage, and other applications where ESD
protection are required in a small footprint package.
The EMI803x is available in a RoHS−compliant, XDFN−10 for 2
Differential Pair and XDFN−16 package for 3 Differential Pair.
MARKING DIAGRAMS
AC M
AA M
AD M
G
G
G
1
1
1
XX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
Features
• Total Insertion Loss DM
< 3.7 dB at 2.5 GHz
LOSS
ELECTRICAL SCHEMATICS
• Large Differential Mode Cutoff Frequency f
> 2.5 GHz
3dB
• High Common Mode Stop Band Attenuation
• Low Channel Resistance 6.0 W
• Provides ESD Protection to IEC61000−4−2 Level 4, 15 kV Contact
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
EMI8032
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• USB 3.0
• MHL 2.0
• mSD Card
• eSATA
• HDMI/DVI Display in Mobile Phones
• MIPI D−PHY (CSI−2, DSI, etc) in Mobile Phones and Digital Still
Cameras
EMI8033
• Automotive Cameras
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Figure 1. EMI8031 Electrical Schematic
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
August, 2020 − Rev. 0
EMI8031/D
EMI803x Series
PIN FUNCTION DESCRIPTION
Device Pin
EMI8031
1
EMI8031
EMI8033
Pin Name
In_1+
Type
Description
1
2
1
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
CMF Channel 1+ to Connector (External)
CMF Channel 1− to Connector (External)
CMF Channel 1+ to ASIC (Internal)
CMF Channel 1− to ASIC (Internal)
CMF Channel 2+ to Connector (External)
CMF Channel 2− to Connector (External)
CMF Channel 2+ to ASIC (Internal)
CMF Channel 2− to ASIC (Internal)
CMF Channel 3+ to Connector (External)
CMF Channel 3− to Connector (External)
CMF Channel 3+ to ASIC (Internal)
CMF Channel 3− to ASIC (Internal)
Ground
In_1−
2
2
Out_1+
Out_1−
In_2+
6
10
9
16
5
15
NA
NA
NA
NA
NA
NA
NA
NA
3,4
4
4
In_2−
5
5
Out_2+
Out_2−
In_3+
7
13
6
12
NA
NA
NA
NA
3, 8
7
In_3−
8
Out_3+
Out_3−
VN
10
9
3,6,14,11
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Parameter
Operating Temperature Range
Symbol
Value
−40 to +85
−65 to +150
260
Unit
°C
T
OP
Storage Temperature Range
T
STG
°C
Maximum Lead Temperature for Soldering Purposes
(1/8” from Case for 10 seconds)
T
L
°C
DC Current per Line
I
100
mA
LINE
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
www.onsemi.com
2
EMI803x Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Reverse Working Voltage
Test Conditions
Min
Typ
Max
Unit
V
V
RWM
(Note 3)
3.3
V
Breakdown Voltage
I = 1 mA; (Note 4)
4.0
9.0
1.0
V
BR
T
I
Channel Leakage Current
T = 25°C, V = 3.3 V, GND = 0 V
mA
W
LEAK
A
IN
R
Channel Resistance
(Pins 1−6, 2−5) − EMI8031
6.0
CH
(Pins 1−10, 2−9, 4−7 and 5−6) − EMI8031
(Pins 1−16, 2−15, 4−13, 5−12, 7−10 and 8−9) − EMI8033
DM
Differential Mode Insertion Loss
@ 2.5 GHz
3.7
2.5
dB
LOSS
f
Differential Mode Cut-off Frequency
50 W Source and Load
GHz
3dB
Termination
F
Common Mode Stop Band Attenuation
@ 750 MHz
30
dB
kV
atten
V
In-system ESD Withstand Voltage
a) Contact discharge per IEC 61000-4-2 standard, Level 4
(External Pins)
b) Contact discharge per IEC 61000-4-2 standard, Level 1
(Internal Pins)
(Notes 1 and 2)
ESD
15
2
V
CL
TLP Clamping Voltage
Forward I = 8 A
8.94
13.4
−3.96
−7.62
V
PP
Forward I = 16 A
PP
Forward I = −8 A
PP
Forward I = −16 A
PP
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Standard IEC61000−4−2 with C
= 150 pF, R
= 330, GND grounded.
Discharge
Discharge
2. These measurements performed with no external capacitor.
3. TVS devices are normally selected according to the working peak reverse voltage (V
or continuous peak operating voltage level.
), which should be equal to or greater than the DC
RWM
4. V is measured at pulse test current I .
BR
T
www.onsemi.com
3
EMI803x Series
TYPICAL CHARACTERISTICS
0
−1
−2
−3
−4
−5
−6
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
1.E+05
−7
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+06
1.E+07
1.E+08
1.E+09
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 2. Typical Differential Mode Attenuation
vs. Frequency
Figure 3. Typical Common Mode Attenuation
vs. Frequency
Interface
Data Rate (Gb/s)
Fundamental Frequency (MHz)
ESD813x Differential Insertion Loss (dB)
MIPI
1.5
750
m1 = 1.25
Figure 4. Differential Mode Insertion Loss
www.onsemi.com
4
EMI803x Series
TRANSMISSION LINE PULSE (TLP) MEASUREMENTS
Transmission Line Pulse (TLP) provides current versus voltage (I−V) curves in which each data point is obtained from a
100 ns long rectangular pulse from a charged transmission line. A simplified schematic of a typical TLP system is shown in
Figure 5. TLP I−V curves of ESD protection devices accurately demonstrate the product’s ESD capability because the 10 s
of amps current levels and under 100 ns time scale match those of an ESD event. This is illustrated in Figure 6 where an 8 kV
IEC61000−4−2 current waveform is compared with TLP current pulses at 8 A and 16 A. A TLP curve shows the voltage at
which the device turns on as well as how well the device clamps voltage over a range of current levels. Typical TLP I−V curves
for the EMI803x are shown in Figure 5.
Attenuator
L
50 W Coax Cable
SW
÷
50 W Coax Cable
VM
IM
10 MQ
VC
DUT
Oscilloscope
Figure 5. Simplified Schematic of a Typical TLP System
Figure 6. Comparison Between 8 kV IEC61000- 4- 2 and 8 A and 16 A TLP Waveforms
18
16
14
12
10
8
−18
−16
−14
−12
−10
−8
6
−6
−4
4
−2
2
0
0
0
2
4
6
8
10
12
14
16
18
0
−2
−4
−6
−8 −10 −12 −14 −16 −18
V (V)
clamp
V
clamp
(V)
Figure 7. Positive and Negative TLP Waveforms
www.onsemi.com
5
EMI803x Series
ORDERING INFORMATION
Orderable Part Number
†
Marking
Package
Shipping
EMI8031MUTAG,
AC
XDFN6
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
SZEMI8031MUTAG*
(Pb−Free)
EMI8032MUTAG,
SZEMI8032MUTAG*
AA
AD
XDFN10
(Pb−Free)
EMI8033MUTAG,
SZEMI8033MUTAG*
XDFN16
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
www.onsemi.com
6
EMI803x Series
PACKAGE DIMENSIONS
XDFN6, 1.50x1.35, 0.5P
CASE 711AY
ISSUE O
NOTES:
A
B
E
D
L
L
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 MM FROM TERMINAL TIP.
PIN 1
REFERENCE
L1
2X
0.10
C
DETAIL A
MILLIMETERS
ALTERNATE
DIM MIN
MAX
0.50
0.05
CONSTRUCTIONS
A
A1
A3
b
0.40
0.00
2X
0.10 C
TOP VIEW
0.15 REF
0.15
0.25
EXPOSED Cu
MOLD CMPD
D
1.50 BSC
1.35 BSC
0.50 BSC
A
DETAIL B
E
(A3)
0.10
0.08
C
e
A1
L
0.35
---
0.65
0.55
0.15
0.85
6X
L1
L2
L3
DETAIL B
C
ALTERNATE
0.15 REF
SEATING
PLANE
CONSTRUCTION
C
SIDE VIEW
RECOMMENDED
MOUNTING FOOTPRINT
e
DETAIL A
3X
L
0.50
3X
1
6
3
4
PITCH
0.86
3X
L2
3X
0.56
L3
1.55
1
6X b
M
C A B
0.10
0.51
5X
0.32
M
C
NOTE 3
0.05
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
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7
EMI803x Series
PACKAGE DIMENSIONS
XDFN10 2.50x1.35, 0.5P
CASE 711AX
ISSUE A
NOTES:
A
B
E
D
L
L
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 MM FROM THE TERMINAL TIP.
PIN ONE
REFERENCE
L1
2X
0.10
C
MILLIMETERS
DETAIL A
DIM MIN
MAX
0.50
0.05
ALTERNATE
A
A1
A3
b
0.40
0.00
CONSTRUCTIONS
2X
0.10 C
TOP VIEW
0.15 REF
0.15
0.25
D
2.50 BSC
1.35 BSC
0.50 BSC
0.40 0.60
--- 0.15
EXPOSED Cu
MOLD CMPD
A
C
DETAIL B
E
(A3)
0.10
0.08
C
e
L
L1
C
DETAIL B
ALTERNATE
A1
SEATING
PLANE
CONSTRUCTION
SIDE VIEW
RECOMMENDED
MOUNTING FOOTPRINT
9X
DETAIL A
10X L
e
5
6
1
PACKAGE
8X
0.65
0.25
OUTLINE
1.55
10
b
10X
1
M
C A B
0.10
0.47
0.50 PITCH
NOTE 3
C
M
0.05
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
www.onsemi.com
8
EMI803x Series
PACKAGE DIMENSIONS
XDFN16 4.0x1.35, 0.5P
CASE 711AZ
ISSUE O
A
B
D
L
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2X
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM THE TERMINAL TIP.
0.10
C
L1
DETAIL A
PIN ONE
REFERENCE
E
ALTERNATE TERMINAL
CONSTRUCTIONS
MILLIMETERS
DIM MIN
MAX
0.50
0.05
2X
A
A1
A3
b
0.40
0.00
0.15 REF
0.15
4.00 BSC
0.10
C
TOP VIEW
EXPOSED Cu
MOLD CMPD
0.25
DETAIL B
A
D
(A3)
E
e
1.35 BSC
0.50 BSC
0.10
C
C
L
L1
L2
0.40
−−−
0.20 REF
0.60
0.15
DETAIL B
ALTERNATE
16X
0.08
CONSTRUCTION
SEATING
PLANE
A1
C
SIDE VIEW
e/2
RECOMMENDED
SOLDERING FOOTPRINT*
DETAIL A
16X
0.65
0.50
PITCH
e
16X L
8
9
1
1.55
L2
1
16
16X b
15X
0.25
0.48
0.10 C A B
DIMENSIONS: MILLIMETERS
0.05
C
NOTE 3
BOTTOM VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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