EMH2408-TL-H [ONSEMI]
N 沟道，功率 MOSFET，20V，4A，45mΩ，双 EMH8;
| 型号： | EMH2408-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，功率 MOSFET，20V，4A，45mΩ，双 EMH8 |
| 文件： | 总7页 (文件大小：548K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1170A
EMH2408
N-Channel Power MOSFET
http://onsemi.com
Ω
20V, 4A, 45m , Dual EMH8
Features
•
The EMH2408 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,
thereby enabling high-density mounting
1.8V drive
Halogen free compliance
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
20
±12
4
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
I
PW 10 s, duty cycle 1%
When mounted on ceramic substrate (900mm2 0.8mm) 1unit
When mounted on ceramic substrate (900mm2 0.8mm)
16
A
≤
μ
≤
DP
P
P
1.0
1.2
150
W
W
°C
°C
×
D
T
×
Channel Temperature
Storage Temperature
Tch
Tstg
--55 to +150
This product is designed to “ESD immunity < 200V ”, so please take care when handling.
*
Machine Model
*
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: EMH8
7045-006
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
EMH2408-TL-H
0.2
0.125
Packing Type : TL
Marking
8
5
LH
TL
Lot No.
1
4
0.5
2.0
Electrical Connection
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
8
7
6
5
EMH8
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
71112 TKIM/90308PE TIIM TC-00001558 No. A1170-1/7
EMH2408
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
20
V
μA
μA
V
(BR)DSS
D
GS
=20V, V =0V
I
I
V
V
V
V
I
1
DSS
DS
GS
DS
DS
GS
=±8V, V =0V
DS
±10
1.3
GSS
V
(off)
GS
=10V, I =1mA
0.4
2.0
D
Forward Transfer Admittance
| yfs |
=10V, I =2A
3.4
S
D
R
R
R
(on)1
=4A, V =4.5V
D GS
34
49
45
67
m
m
m
Ω
Ω
Ω
DS
DS
DS
Static Drain-to-Source On-State Resistance
(on)2
(on)3
I
=1A, V =2.5V
D GS
I
=0.5A, V =1.8V
D GS
74
115
Input Capacitance
Ciss
345
67
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=10V, f=1MHz
pF
pF
ns
DS
52
t
t
t
t
(on)
9.2
60
d
r
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
30
ns
d
f
38
ns
Total Gate Charge
Qg
4.7
0.65
1.6
0.8
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=10V, V =4.5V, I =4A
GS
DS
D
V
SD
I =4A, V =0V
S GS
1.2
Switching Time Test Circuit
V
=10V
V
DD
IN
4.5V
0V
I
=2A
D
V
IN
R =5Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
EMH2408
P.G
50Ω
S
Ordering Information
Device
Package
EMH8
Shipping
3,000pcs./reel
memo
EMH2408-TL-H
Pb Free and Halogen Free
No. A1170-2/7
EMH2408
I
D
-- V
I
D
-- V
GS
DS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
=10V
DS
0.5
0
V
=1.2V
GS
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
DS
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
IT13500
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
GS
-- V
IT13499
R
(on) -- V
R
(on) -- Ta
DS
GS
DS
110
100
90
80
70
60
50
40
30
20
110
100
90
80
70
60
50
40
30
20
Ta=25°C
I =0.5A
D
1A
4A
10
0
10
0
8
0
1
2
3
4
5
6
7
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
Ambient Temperature, Ta -- °C
IT13501
IT13502
GS
| yfs | -- I
I
-- V
SD
D
S
7
5
7
5
V
=0V
V
=10V
GS
DS
3
2
3
2
1.0
7
5
1.0
7
3
2
5
0.1
7
5
3
2
3
2
0.1
0.01
0.01
0.1
2
3
5
7
2
3
5
7
1.0
2
3
5
7
0.3
0.5
0.7
0.9
1.1
IT13504
0.1
Drain Current, I -- A
IT13503
Diode Forward Voltage, V -- V
SD
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
5
1000
V
V
=10V
=4.5V
f=1MHz
DD
GS
3
2
7
5
100
3
2
7
5
3
2
t
f
100
7
5
t (on)
d
10
7
5
3
2
3
2
0.01
2
3
5
7
2
3
5
7
2
3
5
7
0
2
4
6
8
10
12
14
16
18
20
0.1
1.0
10
Drain Current, I -- A
Drain-to-Source Voltage, V
-- V
IT13505
IT13506
D
DS
No. A1170-3/7
EMH2408
V
-- Qg
A S O
GS
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
3
2
V
=10V
I
=16A
PW≤10μs
DS
DP
I =4A
D
10
7
5
1ms
I =4A
D
3
2
1.0
7
5
3
2
Operation in this
area is limited by R (on).
DS
0.1
7
5
3
2
Ta=25°C
0.5
0
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
0.01
0.01
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
2
3
5
7
2
3
5
7
2
3
5
7
2
3
0.1
1.0
10
Drain-to-Source Voltage, V
DS
-- V
Total Gate Charge, Qg -- nC
IT13507
IT13508
P
-- Ta
D
1.4
1.2
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(900mm2✕0.8mm)
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT13509
No. A1170-4/7
EMH2408
Embossed Taping Specification
EMH2408-TL-H
No. A1170-5/7
EMH2408
Outline Drawing
Land Pattern Example
EMH2408-TL-H
Mass (g) Unit
Unit: mm
0.008
mm
* For reference
0.3
0.5
No. A1170-6/7
EMH2408
Note on usage : Since the EMH2408 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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PS No. A1170-7/7
相关型号：
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N-Channel Power MOSFET, 30V, 4A, 59mΩ, Dual EMH8, SOT-383FL / EMH8, 3000-REEL
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