EFC4619R-TR [ONSEMI]
双 N 沟道，功率 MOSFET，24V，6A，23mΩ;
| 型号： | EFC4619R-TR |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道，功率 MOSFET，24V，6A，23mΩ |
| 文件： | 总9页 (文件大小：306K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA2179A
EFC4619R
Power MOSFET
24V, 6A, 23mΩ N-Channel Dual EFCP
Features
http://onsemi.com
2.5V drive
Protection diode in
Common-drain type
2KV ESD HBM
Halogen free compliance
Applications
Lithium-ion battery charging and discharging switch
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Source to Source Voltage
Gate to Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Symbol
Conditions
Ratings
Unit
V
V
24
SSS
V
I
12
V
GSS
6
60
A
S
I
PW10s, duty cycle1%
When mounted on ceramic substrate (5000mm20.8mm)
A
SP
P
1.6
W
C
C
T
Channel Temperature
Storage Temperature
Tch
150
Tstg
- 55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7074
Ordering & Package Information
Device
Package
Shipping
note
Pb-Free
and
Halogen-Free
5000
pcs. / reel
EFC4619R-TR
EFCP
1.61
EFC4619R-TR
4
3
Packing Type: TR
Marking
TR
FU
LOT No.
1
2
Electrical Connection
4
0.65
Rg
3
1: Source1
2: Gate1
Rg
3: Gate2
2
4: Source2
0.3
EFCP1616-4CE-022
Rg=200
1
Semiconductor Components Industries, LLC, 2014
January, 2014
12314HK/51513TKIM TC-00002913 No.A2179-1/9
EFC4619R
Electrical Characteristics at Ta 25C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
24
max
Source to Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Cutoff Voltage
V(BR)
SSS
I =1mA, V =0V
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
V
A
A
V
S
GS
I
V
SS
=20V, V =0V
1
SSS
GSS
GS
I
V
V
V
=±8V, V =0V
SS
1
GS
V
(off)
GS
=10V, I =1mA
0.5
1.3
SS
S
Forward Transfer Admittance
| yfs |
=10V, I =3A
5.8
19.8
20.5
21
S
SS
S
R
R
R
R
R
(on)1
SS
(on)2
SS
(on)3
SS
(on)4
SS
(on)5
SS
I =3A, V =4.5V
GS
13.5
14
23
24
m
m
m
m
m
ns
S
I =3A, V =4.0V
GS
S
Static Source to Source On-State
Resistance
I =3A, V =3.7V
GS
14.5
14.9
18.5
25.5
30
S
I =3A, V =3.1V
GS
23
S
I =3A, V =2.5V
GS
27
35
S
Turn-ON Delay Time
Rise Time
t (on)
340
d
t
440
ns
r
V
SS
=10V, V =4.5V, I =3A Test Circuit 7
GS
S
Turn-OFF Delay Time
Fall Time
t (off)
24400
22400
21.7
0.8
ns
d
t
ns
f
Total Gate Charge
Forward Source to Source Voltage
Qg
V
SS
=10V, V =4.5V, I =6A Test Circuit 8
GS
nC
V
S
V
I =3A, V =0V
S GS
Test Circuit 6
1.2
F(S-S)
No.A2179-2/9
EFC4619R
Test circuits are example of measuring FET1 side
Test Circuit 2
Test Circuit 1
I
I
GSS
SSS
S2
S2
G2
G1
G2
A
V
G1
SS
A
V
GS
S1
S1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
Test Circuit 3
Test Circuit 4
fs
y
V
(off)
GS
S2
S2
G2
G2
A
A
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
G1
V
SS
V
G1
SS
V
GS
V
GS
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
S1
S1
Test Circuit 6
Test Circuit 5
(on)
V
F(S-S)
R
SS
S2
S2
4.5V
IF
IS
G2
G1
G2
V
V
G1
VGS=0V
V
GS
When FET1 is
measured,+4.5V is added to
S1
S1
VGS of FET2.
Test Circuit 8
Qg
Test Circuit 7
t (on), t , t (off), t
f
d
r d
S2
S2
RL
A
G2
G1
G2
G1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
I
=1mA
G
V
RL
R
R
V
SS
S1
S1
50
V
SS
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
PG
PG
No.A2179-3/9
EFC4619R
I
S
-- V
I -- V
S GS
SS
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
9
8
7
6
5
4
3
2
V
=10V
SS
10.0V
1
0
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
2.5
Source to Source Voltage, V
-- V
Gate to Source Voltage, V -- V
GS
SS
R
SS
(on) -- V
R
(on) -- Ta
SS
GS
100
90
80
70
60
50
40
30
20
50
45
40
35
30
25
20
15
10
0
Ta=25°C
S
I =3A
10
0
0
2
4
6
8
10
--60 --40 --20
0
20
40
60
80
100 120 140 160
Gate to Source Voltage, V
GS
-- V
Ambient Temperature, Ta -- °C
|
y
fs | -- I
I
S
-- V
S
F(S-S)
10
7
5
10
7
5
V
=10V
V
=0V
GS
SS
3
2
3
2
1.0
7
5
1.0
7
5
3
2
3
2
0.1
7
5
0.1
7
5
3
2
3
2
0.01
0.001
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10
0
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1.0
Source Current, I -- A
Forward Source to Source Voltage, V
F(S-S)
-- V
S
S/W Time -- I
V
-- Qg
S
GS
100K
4.5
4.0
3.5
V
V
=10V
V
=10V
7
5
SS
SS
I =6A
=4.5V
GS
S
3
2
t
f
10K
3.0
2.5
2.0
1.5
1.0
7
5
3
2
1K
7
5
3
2
t (on)
d
0.5
0
100
0.01
0
5
10
15
20
25
2
3
5
7
2
3
5
7
2
3
5
7
0.1
1.0
Source Current, I -- A
Total Gate Charge, Qg -- nC
S
No.A2179-4/9
EFC4619R
A S O
P
-- Ta
T
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
7
When mounted on ceramic substrate
(5000mm2×0.8mm)
5
3
2
I
=60A(PW≤10μs)
SP
10
7
5
3
2
I =6A
S
DC operation
1.0
7
5
3
2
Operation in this area
is limited by R (on).
SS
0.1
7
5
3
2
Ta=25°
C
Single pulse
When mounted on ceramic substrate (5000mm2×0.8mm)
0.01
0.01
2
3
5
7
2
3
5
7
2
3
5
7
10
2
3
0
20
40
60
80
100
120
140
0.1
1.0
Source Voltage to Source Voltage, V
SS
-- V
Ambient Temperature, Ta -- °C
No.A2179-5/9
EFC4619R
Taping Specification
EFC4619R-TR
No.A2179-6/9
EFC4619R
No.A2179-7/9
EFC4619R
Outline Drawing
EFC4619R-TR
Land Pattern Example
Mass (g) Unit
Unit: mm
0.0014
mm
* For reference
No.A2179-8/9
EFC4619R
Note on usage : Since the EFC4619R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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PS No.A2179-9/9
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