EFC3J018NUZTDG [ONSEMI]
Power MOSFET, Dual N-Channel, 20 V, 23 A, 4.7 mΩ;
| 型号： | EFC3J018NUZTDG |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, Dual N-Channel, 20 V, 23 A, 4.7 mΩ |
| 文件： | 总8页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power, Dual,
N-Channel, for 1-2 Cells
Lithium-ion Battery
Protection
V
R
MAX
I MAX
S
SSS
SS(ON)
20 V
4.7 mW @ 4.5 V
4.75 mW @ 4.0 V
4.9 mW @ 3.8 V
5.4 mW @ 3.1 V
9.0 mW @ 2.5 V
23 A
20 V, 4.7 mW, 23 A
ELECTRICAL CONNECTION
EFC3J018NUZ
4, 6
Introduction
Rg
This Power MOSFET features a low on−state resistance. This
device is suitable for applications such as power switches of portable
machines. Best suited for 1−2 cells lithium−ion battery applications.
5
2
1: Source1
2: Gate1
Rg
Features
• 2.5 V Drive
• 2 kV ESD HBM
3: Source1
4: Source2
5: Gate2
• Common-Drain Type
• ESD Diode-Protected Gate
• This Device is Pb-Free and Halide Free
6: Source2
1, 3
Rg = 200 W
N-Channel
Applications
• 1-2 Cells Lithium-ion Battery Charging and Discharging Switch
Specifications
WLCSP6, 1.77 y 3.05
CASE 567KS
ABSOLUTE MAXIMUM RATINGS (T = 25°C)
A
Parameter
Source to Source Voltage
Gate to Source Voltage
Symbol
Value
20
Unit
V
MARKING DIAGRAM
V
SSS
GSS
V
12
V
MT
Maximum Operating Gate to Source
Voltage (Note 1)
V
8
V
YMZZ
GSS(OP)
Source Current (DC)
I
23
A
A
S
MT
Y
= Specific Device Code
= Year
Source Current (Pulse)
PW ≤ 100 ms, duty cycle ≤ 1%
I
SP
100
M
= Month
Total Dissipation (Note 2)
Junction Temperature
P
2.5
W
ZZ
= Assembly Lot Number
T
T
150
°C
j
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
Storage Temperature
T
−55 to +150
°C
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Functional operation above the stresses listed in the recommended operating
ranges is not implied. Extended exposure to stresses beyond the
recommended operating ranges limits may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
Unit
Junction to Ambient (Note 2)
R
50
°C/W
θ
JA
2
2. Surface mounted on ceramic substrate (5000 mm × 0.8 mm).
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
September, 2022 − Rev. 2
EFC3J018NUZ/D
EFC3J018NUZ
ELECTRICAL CHARACTERISTICS (T = 25°C) (Note 3)
A
Parameter
Symbol
Conditions
I = 1 mA, V = 0 V (Figure 1)
Min
20
−
Typ
−
Max
−
Unit
V
Source to Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Gate Threshold Voltage
V
(BR)SSS
S
GS
I
V
= 20 V, V = 0 V (Figure 1)
−
1
mA
mA
V
SSS
GSS
SS
GS
SS
GS
I
V
V
=
8 V, V = 0 V (Figure 2)
−
−
1
SS
V
R
(th)
= 10 V, I = 1 mA (Figure 3)
0.5
2.5
2.56
2.6
2.9
3.3
−
−
1.3
4.7
4.75
4.9
5.4
9.0
−
GS
S
Static Source to Source On-State
Resistance
(on) I = 5 A, V = 4.5 V (Figure 4)
3.6
3.65
3.75
4.15
4.75
280
890
4100
2800
75
mW
mW
mW
mW
mW
ns
SS
S
GS
I = 5 A, V = 4.0 V (Figure 4)
S
GS
I = 5 A, V = 3.8 V (Figure 4)
S
GS
I = 5 A, V = 3.1 V (Figure 4)
S
GS
I = 5 A, V = 2.5 V (Figure 4)
S
GS
Turn-ON Delay Time
Rise Time
t (on)
d
V = 10 V, V = 4.5 V, I = 3 A
SS GS S
(Figure 5)
t
r
−
−
ns
Turn-OFF Delay Time
Fall Time
t (off)
d
−
−
ns
t
f
−
−
ns
Total Gate Charge
Qg
V
SS
= 10 V, V = 4.5 V, I = 23 A
−
−
nC
GS
S
(Figure 6)
Forward Source to Source Voltage
V
F(S-S)
I = 3 A, V = 0 V
(Figure 7)
−
0.74
1.2
V
S
GS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Refer to the JIS 7030 measuring methods for transistors for measuring.
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2
EFC3J018NUZ
Test Circuits are Example of Measuring FET1 Side
/ I
V
I
(BR)SSS SSS
GSS
S2
S2
S1
G2
G1
G2
A
G1
A
V
SS
When FET1 is measured,
Gate and Source of FET2
are short−circuited.
V
GS
S1
Figure 1. Test Circuit 1
Figure 2. Test Circuit 2
V
GS
(th)
G2
G1
R
(on)
SS
S2
S1
S2
S1
IS
G2
A
When FET1 is measured,
Gate and Source of FET2
are short−circuited.
V
G1
V
SS
V
GS
V
GS
Figure 3. Test Circuit 3
Figure 4. Test Circuit 4
Qg
t (on), t , t (off), t
d
r
d
f
S2
S2
RL
A
G2
G2
When FET1 is measured,
Gate and Source of FET2
are short−circuited.
V
I
G
= 1 mA
PG
G1
G1
RL
V
SS
S1
S1
V
SS
PG
When FET1 is measured,
Gate and Source of FET2
are short−circuited.
Figure 5. Test Circuit 5
Figure 6. Test Circuit 6
V
F(S−S)
S2
IS
G2
G1
VGS = 0 V
V
When FET1 is measured,
S1
+4.5 V is added to V
of FET2.
GS
Figure 7. Test Circuit 7
NOTE: When FET2 is measured, the position of FET1 and FET2 is switched.
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3
EFC3J018NUZ
6.0
5.5
5.0
4.5
4.0
3.5
3.0
10
9
T = 25°C
4.5 V
3.8 V
3.1 V
A
V
SS
= 10 V
8
1.8 V
25°C
2.5 V
7
6
5
4
3
T = 75°C
A
2.5
2.0
1.5
1.0
−25°C
2
1
0
1.3 V
0.5
0
V
= 1.0 V
GS
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
0.5
1.0
1.5
2.5
2.0
V
SS
, Source to Source Voltage (V)
V
GS
, Gate to Source Voltage (V)
Figure 9. IS − VGS
Figure 8. IS − VSS
10
9
30
25
20
15
10
5
I
S
= 5 A
T = 25°C
S
A
I
= 5 A
8
V
GS
= 2.5 V
7
V
GS
= 3.1 V
6
5
V
GS
= 3.8 V
4
V
GS
= 4.0 V
3
2
1
0
V
GS
= 4.5 V
0
0
2
4
8
10
0
40
6
−60 −40 −20
20
60 80 100 120 140 160
V
GS
, Gate to Source Voltage (V)
T , Ambient Temperature(5C)
A
Figure 10. RSS(on) − VGS
Figure 11. RSS(on) − Ta
10000
10
7
V
GS
= 0 V
7
5
td(off)
tf
5
3
2
3
2
T = 75°C
A
25°C
1.0
7
5
3
2
1000
−25°C
7
5
tr
0.1
7
td(on)
3
2
5
3
2
V
= 10 V
= 4.5 V
SS
V
GS
100
0.01
0.01
2 3 5 7
100
2 3 5 7
0.1
2 3 5 7 2 3 5 7
1.0 10
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I , Source Current (A)
S
V , Forward Source to Source Voltage (V)
F(S-S)
Figure 12. IS − VF(S−S)
Figure 13. SW Time − IS
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4
EFC3J018NUZ
1000
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
7
5
3
2
V
= 10 V
= 23 A
SS
I
S
I
= 100 A (PW ≤ 100 ms)
SP
100
7
5
3
2
I
S
= 23 A
1 ms
10
7
5
3
10 ms
2
Operation in
1.0
this area is limited
7
100 ms
DC Operation
5
by R (on).
SS
3
2
T
A
= 25°C
Single Pulse
0.1
7
5
When mounted on ceramic substrate
3
2
2
(5000 mm x 0.8 mm)
0.01
2 3 5 7
100
2 3 5 7
2 3 5 7
2 3 5 7
1.0 10
0
10
20
30
40
50
60
70
80
0.01
0.1
V
SS
, Source to Source Voltage (V)
Figure 15. SOA
Qg, Total Gate Charge (nC)
Figure 14. VGS − Qg
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Surface mounted on ceramic substrate
(5000 mm x 0.8 mm)
2
0
20
40
60
80
100 120 140 160
T , Ambient Temperature (5C)
A
Figure 16. PT − Ta
100
7
5
Duty Cycle = 0.5
0.2
3
2
10
0.1
0.05
7
5
3
2
0.02
0.01
1.0
7
5
3
2
0.1
7
5
3
2
0.01
Single Pulse
7
5
3
2
Surface mounted on ceramic substrate
2
(5000 mm x 0.8 mm)
0.001
3
7
3
7
3
7
2
5
3
7
5
2
5
2
5
3
7
2
3
7
3
7
5
2
5
2
5
2
0.00001
0.001
P , Pulse Time (s)
0.01
0.1
1.0
10
0.000001
0.0001
T
Figure 17. RqJA − Pulse Time
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5
EFC3J018NUZ
ORDERING INFORMATION
Device
†
Marking
Package
Shipping (Qty / Packing)
EFC3J018NUZTDG
MT
WLCSP6, 1.77 × 3.05
(Pb-Free / Halide Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Note on usage: Since the EFC3J018NUZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Please contact sales
for use except the designated application.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WLCSP6, 1.77x3.05
CASE 567KS
ISSUE O
DATE 29 OCT 2014
SCALE 4:1
NOTES:
E
A
B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
DIM
A
b
b1
D
MIN
−−−
0.22
0.32
MAX
0.145
0.28
PIN A1
REFERENCE
0.38
1.77 BSC
2X
E
e
e2
L
3.05 BSC
0.80 BSC
0.8775 BSC
0.05
0.05
C
2X
C
0.975
1.035
TOP VIEW
SIDE VIEW
A
RECOMMENDED
SOLDERING FOOTPRINT*
0.03
0.03
C
C
2X
4X
8X
R0.18
SEATING
0.25
C
1.005
PLANE
PACKAGE
OUTLINE
e2
e2
2X
b
e/2
1
2
3
0.80
PITCH
0.05
0.03
C
C
A B
e
1
1.76
PITCH
DIMENSIONS: MILLIMETERS
4X b1
6
5
4
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
L
BOTTOM VIEW
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON92329F
WLCSP6, 1.77X3.05
PAGE 1 OF 1
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