ECH8668-TL-H [ONSEMI]
互补,双功率 MOSFET 20V;Ordering number : ENA1510A
ECH8668
Power MOSFET
http://onsemi.com
–
–
Ω
Ω
20V, 7.5A, 17m , 20V, 5A, 38m , Complementary Dual ECH8
Features
•
The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
high-speed switching , thereby enablimg high-density mounting
•
•
•
1.8V drive
Halogen free compliance
Protection diode in
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
N-channel
20
P-channel
--20
Unit
V
V
DSS
V
±10
7.5
40
±10
V
GSS
I
--5
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
I
PW 10 s, duty cycle 1%
--40
A
≤
μ
≤
DP
P
P
When mounted on ceramic substrate (900mm2 0.8mm) 1unit
When mounted on ceramic substrate (900mm2 0.8mm)
1.3
1.5
W
W
°C
°C
×
D
T
×
Channel Temperature
Storage Temperature
Tch
150
--55 to +150
Tstg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: ECH8
7011A-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
Top View
2.9
ECH8668-TL-H
Packing Type : TL
Marking
0.15
8
5
TP
0 to 0.02
Lot No.
TL
4
1
Electrical Connection
0.65
0.3
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
2
3
4
ECH8
Bottom View
Semiconductor Components Industries, LLC, 2013
July, 2013
80112 TKIM/O2809PE TKIM TC-00002167 No. A1510-1/8
ECH8668
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
20
(BR)DSS
D
GS
I
V
=20V, V =0V
1
A
A
μ
DSS
DS GS
I
V
=±8V, V =0V
±10
1.3
μ
GSS
GS DS
V
(off)
|
V
=10V, I =1mA
0.5
4.2
V
GS
yfs
DS D
Forward Transfer Admittance
V
I
=10V, I =4A
D
7
S
|
DS
R
R
R
(on)1
(on)2
(on)3
=4A, V =4.5V
GS
13
18
17
26
48
m
Ω
Ω
Ω
DS
DS
DS
D
Static Drain-to-Source On-State Resistance
I
D
=2A, V =2.5V
GS
m
m
I
D
=0.5A, V =1.8V
GS
30
Input Capacitance
Ciss
1060
180
135
17.5
120
68
pF
Output Capacitance
Coss
Crss
V
=10V, f=1MHz
pF
pF
ns
DS
Reverse Transfer Capacitance
Turn-ON Delay Time
t
t
t
t
(on)
d
r
Rise Time
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
ns
d
f
80
ns
Total Gate Charge
Qg
10.8
2.1
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Qgs
Qgd
V
=10V, V =4.5V, I =7.5A
GS
DS
D
2.9
V
SD
I =7.5A, V =0V
S GS
0.74
1.2
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=--1mA, V =0V
--20
V
(BR)DSS
D GS
I
V
=--20V, V =0V
--1
±10
A
A
μ
DSS
DS
GS
I
V
=±8V, V =0V
GS DS
μ
GSS
V
(off)
|
V
=--10V, I =--1mA
DS D
--0.4
4.9
--1.3
V
GS
yfs
Forward Transfer Admittance
V
I
=--10V, I =--3A
D
8.3
29
S
|
DS
R
R
R
(on)1
(on)2
(on)3
=--3A, V =--4.5V
GS
38
58
98
m
Ω
Ω
Ω
DS
DS
DS
D
Static Drain-to-Source On-State Resistance
I
D
=--1.5A, V =--2.5V
GS
41
m
m
I
D
=--0.5A, V =--1.8V
GS
64
Input Capacitance
Ciss
960
180
140
14
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--10V, f=1MHz
pF
pF
ns
DS
t
t
t
t
(on)
d
r
55
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
92
ns
d
f
68
ns
Total Gate Charge
Qg
11
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=--10V, V =--4.5V, I =--5A
2.0
2.8
--0.82
DS
GS
D
V
SD
I =--5A, V =0V
S GS
--1.2
Switching Time Test Circuit
[N-channel]
[P-channel]
V =10V
DD
V = --10V
DD
V
IN
V
IN
4V
0V
0V
--4V
I
=4A
I
= --3A
D
D
V
IN
V
IN
R =2.5Ω
R =3.33Ω
L
L
D
V
OUT
D
V
OUT
PW=10μs
D.C.≤1%
PW=10μs
D.C.≤1%
G
G
ECH8668
ECH8668
P. G
P. G
50Ω
50Ω
S
S
Ordering Information
Device
Package
ECH8
Shipping
memo
Pb Free and Halogen Free
ECH8668-TL-H
3,000pcs./reel
No. A1510-2/8
ECH8668
I
-- V
DS
I
-- V
[Nch]
[Nch]
=10V
D
D GS
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
10
9
V
DS
8
7
6
5
4
3
V
=1.5V
GS
2
1
0
0.5
0
0
0.1
0.2
0.3
0.4
0.5
IT12483
0
0.5
1.0
1.5
2.0
2.5
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
GS
-- V
IT12484
DS
R
(on) -- V
[Nch]
R
(on) -- Ta
[Nch]
DS
GS
DS
40
35
30
25
20
15
10
40
35
30
25
20
15
10
Ta=25°C
I
=2A
D
4A
5
0
5
0
0
2
4
6
8
10
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
Ambient Temperature, Ta -- °C
IT12485
IT12486
GS
| yfs | -- I
[Nch]
I
-- V
[Nch]
D
S SD
10
7
5
10
7
V
=0V
V
=10V
GS
DS
5
3
2
3
2
1.0
7
5
1.0
7
3
2
5
0.1
7
5
3
2
3
2
0.1
0.01
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
2
3
5
7
2
3
5
7
2
3
5 7
10
0.1
1.0
Drain Current, I -- A
IT12487
Diode Forward Voltage, V
SD
-- V
IT12488
D
SW Time -- I
[Nch]
Ciss, Coss, Crss -- V
DS
[Nch]
D
1000
3
2
V
V
=10V
=4V
f=1MHz
DD
GS
7
5
Ciss
3
2
1000
7
5
100
3
2
7
5
3
2
100
t (on)
d
7
5
10
0.1
2
3
5
7
2
3
5
7
0
2
4
6
8
10
12
14
16
18
20
1.0
10
Drain-to-Source Voltage, V
-- V
Drain Current, I -- A
IT12489
IT12490
DS
D
No. A1510-3/8
ECH8668
V
GS
-- Qg
[Nch]
A S O
[Nch]
PW≤10μs
7
5
4.5
4.0
3.5
I
=40A
DP
V
=10V
DS
=7.5A
3
2
I
D
1ms
I =7.5A
D
10
7
5
3.0
2.5
2.0
1.5
1.0
3
2
1.0
7
5
Operation in this
3
2
area is limited by R (on).
DS
0.1
7
5
Ta=25°C
Single pulse
3
2
0.5
0
When mounted on ceramic substrate
(900mm2×0.8mm)
0.01
0.01
0
0
0
1
2
3
4
5
6
7
8
9
10
11
2
3
5
7
2
3
5
7
2
3
5
7
10
2
3
5
0.1
1.0
Drain-to-Source Voltage, V
DS
-- V
IT12491
IT14781
Total Gate Charge, Qg -- nC
I
D
-- V
DS
I
-- V
[Pch]
[Pch]
D GS
--5
--4
--3
--2
--8
V
= --10V
GS
--7
--6
--5
--4
--3
--2
--1
0
--1
0
V
= --1.2V
GS
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
Drain-to-Source Voltage, V
DS
-- V
Gate-to-Source Voltage, V
GS
-- V
IT13074
IT13073
R
(on) -- V
[Pch]
R
(on) -- Ta
[Pch]
DS
GS
DS
140
120
100
80
100
80
Ta=25°C
I
= --0.5A
D
--1.5A
--3.0A
60
60
40
40
20
0
20
0
--1
--2
--3
--4
--5
--6
--7
--8
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
GS
-- V
Ambient Temperature, Ta -- °C
IT13075
IT13076
| yfs | -- I
[Pch]
= --10V
I
-- V
[Pch]
D
S SD
3
2
--10
7
5
V
=0V
V
GS
DS
3
2
10
7
5
--1.0
7
5
3
2
3
2
1.0
7
--0.1
7
5
5
3
2
3
2
0.1
--0.01
--0.01
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT13078
2
3
5
7
2
3
5
7
2
3
5
7
--0.1
--1.0
--10
IT13077
Drain Current, I -- A
Diode Forward Voltage, V -- V
SD
D
No. A1510-4/8
ECH8668
[Pch]
[Pch]
SW Time -- I
Ciss, Coss, Crss -- V
DS
D
3
2
1000
f=1MHz
V
V
= --10V
= --4V
DD
GS
7
5
3
2
Ciss
1000
7
5
100
7
5
3
2
3
2
t (on)
d
100
10
7
7
2
3
5
7
2
3
5
7
2
3
5
7
0
--2
--4
--6
--8
--10 --12 --14 --16 --18 --20
--0.01
--0.1
--1.0
--10
Drain Current, I -- A
Drain-to-Source Voltage, V
-- V
IT13079
IT13080
D
DS
V
-- Qg
[Pch]
A S O
[Pch]
GS
--4.5
--100
7
5
V
= --10V
I
= --40A
DP
DS
PW≤10μs
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
I = --5A
D
3
2
1ms
--10
7
5
I = --5A
D
3
2
--1.0
7
5
Operation in this
area is limited by R (on).
3
2
DS
--0.1
7
5
Ta=25°C
Single pulse
3
2
--0.5
0
When mounted on ceramic substrate
(900mm2×0.8mm)
--0.01
--0.01
0
1
2
3
4
5
6
7
8
9
10
11
2
3
5
7
2
3
5
7
2
3
5
7
--10
2
3
5
--0.1
--1.0
Total Gate Charge, Qg -- nC
IT13081
Drain-to-Source Voltage, V
DS
-- V
IT13082
P
-- Ta
[Nch/Pch]
D
1.8
When mounted on ceramic substrate
(900mm2×0.8mm)
1.6
1.5
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
IT13083
Ambient Temperature, Ta -- °C
No. A1510-5/8
ECH8668
Embossed Taping Specification
ECH8668-TL-H
No. A1510-6/8
ECH8668
Outline Drawing
Land Pattern Example
ECH8668-TL-H
Mass (g) Unit
Unit: mm
0.02
mm
* For reference
0.4
0.65
No. A1510-7/8
ECH8668
Note on usage : Since the ECH8668 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
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PS No. A1510-8/8
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