ECH8654-TL-H [ONSEMI]
P 沟道，功率 MOSFET，-20V，-5A，38mΩ，双 ECH8;
| 型号： | ECH8654-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，功率 MOSFET，-20V，-5A，38mΩ，双 ECH8 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA0981B
ECH8654
P-Channel Power MOSFET
http://onsemi.com
–
–
Ω
20V, 5A, 38m , Dual ECH8
Features
•
•
•
Low ON-resistance
Halogen free compliance
1.8V drive
Protection diode in
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
--20
Unit
V
V
DSS
V
±10
V
GSS
I
-- 5
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
When mounted on ceramic substrate (900mm2 0.8mm) 1unit
When mounted on ceramic substrate (900mm2 0.8mm)
--40
A
≤
μ
≤
DP
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
P
P
1.3
W
W
°C
°C
×
D
T
1.5
×
Tch
150
Tstg
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: ECH8
7011A-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
ECH8654-TL-H
Top View
2.9
Packing Type : TL
Marking
0.15
8
5
WZ
0 to 0.02
TL
LOT No.
4
1
Electrical Connection
0.65
0.3
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
2
3
4
ECH8
Bottom View
Semiconductor Components Industries, LLC, 2013
July, 2013
91212 TKIM/62012 TKIM/N1407PE TIIM TC-00001014 No. A0981-1/7
ECH8654
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
--20
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I =--1mA, V =0V
D GS
(BR)DSS
I
V
=--20V, V =0V
--1
A
A
μ
DSS
DS GS
I
V
=±8V, V =0V
±10
μ
GSS
GS DS
V
(off)
|
V
=--10V, I =--1mA
--0.4
4.9
--1.3
V
GS
yfs
DS D
Forward Transfer Admittance
V
DS
=--10V, I =--3A
D
8.3
S
|
R
R
R
(on)1
(on)2
(on)3
I
=--3A, V =--4.5V
GS
29
41
38
58
98
m
Ω
Ω
Ω
DS
DS
DS
D
Static Drain-to-Source On-State Resistance
I
D
=--1.5A, V =--2.5V
GS
m
m
I
D
=--0.5A, V =--1.8V
GS
64
Input Capacitance
Ciss
960
180
140
14
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--10V, f=1MHz
pF
pF
ns
DS
t
t
t
t
(on)
d
r
55
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
92
ns
d
f
68
ns
Total Gate Charge
Qg
11
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=--10V, V =--4.5V, I =--5A
2.0
2.8
--0.82
DS
GS
D
V
SD
I =--5A, V =0V
S GS
--1.2
Switching Time Test Circuit
V
= --10V
V
DD
IN
0V
--4V
I
= --3A
D
V
IN
R =3.33Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
ECH8654
P.G
50Ω
S
Ordering Information
Device
Package
ECH8
Shipping
memo
ECH8654-TL-H
3,000pcs./reel
Pb Free and Halogen Free
No. A0981-2/7
ECH8654
I
D
-- V
DS
I
-- V
D GS
--5
--4
--3
--2
--8
--7
--6
--5
--4
--3
--2
V
= --10V
GS
--1
0
--1
0
V
= --1.2V
GS
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
IT13074
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V -- V
GS
IT13073
DS
R
(on) -- V
R
DS
(on) -- Ta
DS
GS
140
120
100
80
100
80
Ta=25°C
I
= --0.5A
D
--1.5A
--3.0A
60
60
40
40
20
0
20
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
Ambient Temperature, Ta -- °C
IT13075
IT13076
GS
| yfs | -- I
I
S
-- V
SD
D
3
2
--10
7
5
V
=0V
V
= --10V
GS
DS
3
2
10
7
5
--1.0
7
5
3
2
3
2
1.0
7
--0.1
7
5
5
3
2
3
2
0.1
--0.01
--0.01
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT13078
2
3
5
7
2
3
5
7
2
3
5 7
--10
--0.1
--1.0
Drain Current, I -- A
IT13077
Diode Forward Voltage, V -- V
SD
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
3
2
1000
f=1MHz
V
V
= --10V
= --4V
DD
GS
7
5
3
2
Ciss
1000
7
5
100
7
5
3
2
3
2
t (on)
d
100
10
7
7
2
3
5
7
2
3
5
7
2
3
5
7
0
--2
--4
--6
--8
--10 --12 --14 --16 --18 --20
--0.01
--0.1
--1.0
--10
Drain Current, I -- A
Drain-to-Source Voltage, V
DS
-- V
IT13079
IT13080
D
No. A0981-3/7
ECH8654
V
-- Qg
A S O
GS
--4.5
--100
7
V
= --10V
I
= --40A
DP
DS
PW≤10μs
5
--4.0 I = --5A
D
3
2
1ms
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--10
I = --5A
7
5
D
3
2
--1.0
7
5
Operation in this
area is limited by R (on).
3
2
DS
--0.1
7
5
Ta=25°C
Single pulse
3
2
--0.5
0
Mounted on a ceramic board (900mm2
×0.8mm) 1unit
--0.01
--0.01
0
1
2
3
4
5
6
7
8
9
10
11
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
--0.1
--1.0
--10
Total Gate Charge, Qg -- nC
IT13081
Drain-to-Source Voltage, V
DS
-- V
IT13082
P
-- Ta
D
1.8
Mounted on a ceramic board (900mm2×0.8mm)
1.6
1.5
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
IT13083
Ambient Temperature, Ta -- °C
No. A0981-4/7
ECH8654
Embossed Taping Specification
ECH8654-TL-H
No. A0981-5/7
ECH8654
Outline Drawing
Land Pattern Example
ECH8654-TL-H
Mass (g) Unit
Unit: mm
0.02
mm
* For reference
0.4
0.65
No. A0981-6/7
ECH8654
Note on usage : Since the ECH8654 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A0981-7/7
相关型号：
ECH8657TL
Power Field-Effect Transistor, 4.5A I(D), 35V, 0.059ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, ECH8, 8 PIN
ONSEMI
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