ECH8503-TL-H [ONSEMI]
Bipolar Transistor, -50V, -5A, Low VCE(sat), PNP Dual;
| 型号： | ECH8503-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | Bipolar Transistor, -50V, -5A, Low VCE(sat), PNP Dual |
| 文件： | 总7页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1680A
ECH8503
Bipolar Transistor
http://onsemi.com
–
–
( )
sat PNP Dual ECH8
50V, 5A, Low V
CE
Features
•
Composite type, facilitating high-density mounting
Mounting height 0.9mm
Halogen free compliance
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
-50
CBO
V
-50
V
CEO
V
-6
V
EBO
I
C
-5
A
Collector Current (Pulse)
Base Current
I
-10
A
CP
I
B
-1
1.3
A
Collector Dissipation
Total Dissipation
P
P
When mounted on ceramic substrate (900mm2 0.8mm) 1unit
W
W
×
C
T
When mounted on ceramic substrate (900mm2 0.8mm)
1.6
×
Junction Temperature
Storage Temperature
Tj
150
C
C
°
°
Tstg
-55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: ECH8
7011A-008
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
Top View
2.9
ECH8503-TL-H
Taping Type : TL
Marking
0.15
8
5
MC
0 to 0.02
TL
Lot No.
4
1
Electrical Connection
0.65
0.3
8
7
6
5
1 : Emitter1
2 : Base1
3 : Emitter2
4 : Base2
5 : Collector2
6 : Collector2
7 : Collector1
8 : Collector1
1
2
3
4
ECH8
Bottom View
Semiconductor Components Industries, LLC, 2013
August, 2013
53012 TKIM/51910EA TKIM TC-00002334 No. A1680-1/7
ECH8503
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
-0.1
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
V
= -50V, I =0A
A
A
μ
CBO
CB E
I
V
= -4V, I =0A
-0.1
560
μ
EBO
EB C
h
V
CE
= -2V, I = -500mA
200
FE
C
Gain-Bandwidth Product
Output Capacitance
f
V
= -10V, I = -500mA
280
42
MHz
pF
mV
mV
V
T
CE C
Cob
V
CB
= -10V, f=1MHz
V
(sat)1
(sat)2
(sat)
I
C
= -1A, I = -50mA
-60
-100
-190
-1.1
CE
B
Collector-to-Emitter Saturation Voltage
V
I
C
= -2.5A, I = -125mA
-110
-0.9
CE
B
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
V
I = -2.5A, I = -125mA
C B
BE
V
I
C
= -10 A, I =0A
-50
-50
-6
V
μ
(BR)CBO
E
V
I
C
= -1mA, R
=
V
∞
(BR)CEO
BE
V
I = -10 A, I =0A
E
V
μ
(BR)EBO
C
t
t
t
30
170
17
ns
on
Storage Time
See specified Test Circuit.
ns
stg
f
Fall Time
ns
Note) The specifications shown above are for each individual transistor.
Switching Time Test Circuit
I
B1
PW=20μs
D.C.≤1%
V
OUT
I
B2
INPUT
R
B
V
R
R
L
50Ω
+
+
100μF
470μF
V
BE
=5V
V
CC
= --12V
I = --20I =20I = --2.5A
C B1 B2
Ordering Information
Device
Package
ECH8
Shipping
memo
ECH8503-TL-H
3,000pcs./reel
Pb Free and Halogen Free
No. A1680-2/7
ECH8503
I
C
-- V
CE
I
-- V
C CE
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--5.0
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.2
0
--0.5
0
I =0mA
I =0mA
B
B
0
--0.1
--0.2
--0.3
--0.4
--0.5
0
--0.4
--0.8
--1.2
--1.6
--2.0
Collector-to-Emitter Voltage, V
CE
-- V IT15447
Collector-to-Emitter Voltage, V
CE
-- V IT15448
h
-- I
I
-- V
FE
C
C
BE
1000
--5
--4
--3
--2
V
= --2V
V
= --2V
CE
CE
7
5
3
2
100
7
5
3
2
--1
0
10
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
2
3
5
7
2
3
5
7
--1.0
2
3
5
7
--0.01
--0.1
Collector Current, I -- A
C
Base-to-Emitter Voltage, V
-- V
IT15449
IT15450
BE
f
-- I
C
Cob -- V
T
CB
3
2
7
5
V
= --10V
f=1MHz
CE
3
2
100
7
5
100
7
5
3
2
3
2
10
--1.0
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
--0.01
--0.1
--1.0
--10
Collector Current, I -- A
IT15451
IT15452
Collector-to-Base Voltage, V
-- V
C
CB
V
(sat) -- I
C
V
(sat) -- I
C
CE
CE
5
--1000
I
/ I =20
I / I =50
C B
C
B
7
5
3
2
3
2
--100
7
5
--100
7
5
3
2
3
2
--10
--10
7
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
--1.0
2
3
5
7
--0.01
--0.1
--1.0
--0.01
--0.1
Collector Current, I -- A
IT15453
IT15454
Collector Current, I -- A
C
C
No. A1680-3/7
ECH8503
V
BE
(sat) -- I
C
Forward Bias A S O
2
3
2
I
/ I =20
B
I
= --10A
C
CP
--10
7
5
I = --5A
C
3
2
--1.0
--1.0
7
5
7
5
3
2
--0.1
7
5
3
3
2
Ta=25°C
Single pulse
2
--0.01
2
3
5
7
2
3
5
7
--1.0
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
--0.01
--0.1
--1.0
--10
--0.01
--0.1
Collector Current, I -- A
IT15455
Collector-to-Emitter Voltage, V
-- V IT15456
C
CE
P
-- Ta
C
1.8
When mounted on ceramic substrate
(900mm2
×
0.8mm)
1.6
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
IT15457
Ambient Temperature, Ta -- °C
No. A1680-4/7
ECH8503
Embossed Taping Specification
ECH8503-TL-H
No. A1680-5/7
ECH8503
Outline Drawing
Land Pattern Example
ECH8503-TL-H
Mass (g) Unit
Unit: mm
0.02
mm
* For reference
0.4
0.65
No. A1680-6/7
ECH8503
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PS No. A1680-7/7
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