ECH8308-TL-H [ONSEMI]
P 沟道功率 MOSFET，-12V，-10A，12.5mΩ;
| 型号： | ECH8308-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道功率 MOSFET，-12V，-10A，12.5mΩ |
| 文件： | 总6页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power, P-Channel,
Single ECH8
-12 V, -10 A, 12.5 mW
SOT−28FL / ECH8
CASE 318BF
ECH8308
MARKING DIAGRAM
Features
• Best Suited for Load Switching
• 1.8 V Drive
JK
Lot No.
• Protection Diode in
• Low ON−resistance
• This is a Pb−Free and Halide Free Device
ELECTRICAL CONNECTION
ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C)
8
1
7
6
5
1: Source
2: Source
3: Source
4: Gate
5: Drain
6: Drain
7: Drain
8: Drain
Parameter
Symbol
Conditions
Ratings
Unit
Drain−to−Source
Voltage
V
DSS
−12
V
Gate−to−Source
Voltage
V
GSS
10
V
Drain Current (DC)
I
D
−10
−40
A
A
2
3
4
Drain Current (Pulse)
I
PW ≤ 10 ms,
duty cycle ≤ 1%
DP
ORDERING INFORMATION
Allowable Power
Dissipation
P
D
When mounted on
ceramic substrate
1.6
W
†
2
Device
Package
Shipping
(900 mm × 0.8 mm)
ECH8308−TL−H
3000 /
Tape & Reel
SOT−28FL / ECH8
(Pb−Free and
Halide Free)
Channel Temperature
Storage Temperature
Tch
150
°C
°C
Tstg
−55 to
+150
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
June, 2023 − Rev. 2
ECH8308/D
ECH8308
ELECTRICAL CHARACTERISTICS (at Ta = 25°C)
Ratings
Typ
−
Min
−12
−
Max
−
Parameter
Drain−to−Source Breakdown Voltage
Zero−Gate Voltage Drain Current
Gate−to−Source Leakage Current
Cutoff Voltage
Symbol
Conditions
Unit
V
V
I = −1 mA, V = 0 V
D GS
(BR)DSS
I
V
V
V
V
I
= −12 V, V = 0 V
−
−10
10
−1.3
−
mA
mA
V
DSS
GSS
DS
GS
DS
DS
GS
I
=
8 V, V = 0 V
−
−
DS
V
GS(off)
= −6 V, I = −1 mA
−0.4
12
−
−
D
Forward Transfer Admittance
| yfs |
= −6 V, I = −4.5 A
21
S
D
Static Drain−to−Source On−State
Resistance
R
R
R
(on)1
= −4.5 A, V = −4.5 V
9.2
14
12.5
20
33
−
mW
mW
mW
pF
pF
pF
ns
DS
DS
DS
D
GS
(on)2
(on)3
I
D
I
D
= −2 A, V = −2.5 V
−
GS
= −1 A, V = −1.8 V
−
22
GS
Input Capacitance
Ciss
V
DS
= −6 V, f = 1 MHz
−
2300
720
550
24
Output Capacitance
Reverse Transfer Capacitance
Turn−ON Delay Time
Rise Time
Coss
Crss
−
−
−
−
t (on)
d
See specified Test Circuit.
−
−
t
r
−
130
230
195
26
−
ns
Turn−OFF Delay Time
Fall Time
t (off)
d
−
−
ns
t
f
−
−
ns
Total Gate Charge
Qg
V
D
= −6 V, V = −4.5 V,
−
−
nC
nC
nC
V
DS
GS
I
= −10 A
Gate−to−Source Charge
Gate−to−Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
−
4.0
7.1
−0.79
−
−
−
V
SD
I
S
= −10 A, V = 0 V
−
−1.2
GS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
V
DD
= −6 V
V
IN
0 V
−4.5 V
I
= −5 A
D
L
V
IN
R = 1.2 W
D
V
OUT
PW = 10 ms
D.C. ≤ 1%
G
ECH8308
P.G
S
50 W
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2
ECH8308
−10
−9
−14
−8.0 V
−4.5 V
−3.5 V
−2.5 V
V
DS
= −6 V
−1.5 V
−12
−8
−10
−8
−7
−6
−1.8 V
−5
−4
−6
−4
−2
0
−3
−2
25°C
V
= −1.2 V
T = 75°C
A
GS
−1
−25°C
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8
0
0
−0.1
0
−0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9 −1.0
V
GS
, Gate−to−Source Voltage (V)
Figure 2. ID − VGS
V
DS
, Drain−to−Source Voltage (V)
Figure 1. ID − VDS
40
35
30
T = 25°C
A
35
30
−3 A
V
GS
= −1.8 V, I = −1 A
D
−5 A
25
20
15
I
D
= −1 A
25
20
15
10
5
V
GS
= −2.5 V, I = −3 A
D
10
V
GS
= −4.5 V, I = −5 A
D
5
0
0
−60
0
−1
−3
−4
−5
−6
−7
−8
−40 −20
0
20 40 60 80 100 120 140 160
−2
V
GS
, Gate−to−Source Voltage (V)
Ta, Ambient Temperature (°C)
Figure 4. RDS(on) − Ta
Figure 3. RDS(on) − VGS
3
2
7
5
3
2
V
= −6 V
V
= 0 V
DS
GS
−10
7
5
3
2
10
7
−1.0
7
5
3
2
5
T = −25°C
A
3
2
T = 75°C
25°C
A
25°C
−0.1
7
5
3
2
75°C
1.0
7
−25°C
5
−0.01
7
5
3
2
3
2
0.1
−0.01
−0.001
2
3
5 7
2
3
5 7
−1.0
2
3
5 7
−10
0
−1.0
−0.1
−0.2
−0.4
−0.6
−0.8
−1.2
I , Drain Current (A)
D
V
SD
, Diode Forward Voltage (V)
Figure 6. IS − VSD
Figure 5. SyfsY − ID
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3
ECH8308
7
2
f = 1 MHz
V
DD
V
GS
= −6 V
= −4.5 V
5
1000
7
5
3
2
Ciss
t (off)
d
3
2
t
f
1000
100
Coss
7
5
7
5
t
r
Crss
t (on)
3
2
d
3
2
10
−0.01
2 3 5 7
2 3 5 7
−1.0
2 3 5 7
−10
2 3
−0.1
0
−2
−4
−6
−8
−10
−12
I , Drain Current (A)
D
V
, Drain−to−Source Voltage (V)
DS
Figure 7. SW Time − ID
Figure 8. Ciss, Coss, Crss − VDS
−4.5
7
5
I
I
= −40 A
DP
V
= −6 V
DS
−4.0
I = −10 A
D
3
2
1 ms
10 ms
100 ms
DC Operation
−3.5
−3.0
−2.5
= −10 A
D
−10
7
5
(Ta = 25°C)
3
2
−2.0
−1.5
−1.0
−0.5
0
Operation in this
area is limited by R (on).
−1.0
DS
7
5
Ta = 25°C
Single pulse
When mounted on ceramic substrate
(900 mm × 0.8 mm)
3
2
2
−0.1
−0.01
2 3 5 7
2 3 5 7
−0.1
−1.0
2 3 5 7
−10
2 3
12
14 16 18 20 22
24 26
4
10
0
2
6
8
Qg, Total Gate Charge (nC)
V
DS
, Drain−to−Source Voltage (V)
Figure 9. VGS − Qg
Figure 10. ASO
1.8
1.6
1.4
When mounted on ceramic substrate
(900 mm × 0.8 mm)
2
1.2
1.0
0.8
0.6
0.4
0.2
0
140
80
160
0
20
40
60
100
120
Ta, Ambient Temperature (°C)
Figure 11. PD − Ta
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−28FL / ECH8
CASE 318BF
ISSUE O
DATE 31 MAR 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON78700E
SOT−28FL / ECH8
PAGE 1 OF 1
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