DTC114EET1_06 [ONSEMI]
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network; 偏置电阻晶体管NPN硅表面贴装晶体管与单片偏置电阻网络
| 型号： | DTC114EET1_06 |
| 厂家： | 
ONSEMI |
| 描述： | Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network |
| 文件： | 总11页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTC114EET1 Series
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base−emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC−75/SOT−416 package which is designed for low power surface
mount applications.
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NPN SILICON
BIAS RESISTOR TRANSISTORS
PIN 3
COLLECTOR
(OUTPUT)
Features
PIN 1
R1
• Simplifies Circuit Design
BASE
(INPUT)
• Reduces Board Space
R2
• Reduces Component Count
PIN 2
EMITTER
(GROUND)
• The SC−75/SOT−416 Package Can be Soldered Using Wave or
Reflow
• The Modified Gull−Winged Leads Absorb Thermal Stress During
Soldering Eliminating the Possibility of Damage to the Die
• Pb−Free Packages are Available
3
2
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
Value
50
Unit
Vdc
V
V
CBO
CEO
SC−75 (SOT−416)
CASE 463
50
Vdc
STYLE 1
I
100
mAdc
C
THERMAL CHARACTERISTICS
MARKING DIAGRAM
Rating
Symbol
Value
Unit
Total Device Dissipation,
P
D
FR−4 Board (Note 1) @ T = 25°C
Derate above 25°C
200
1.6
mW
mW/°C
A
xx M G
Thermal Resistance,
Junction−to−Ambient (Note 1)
R
600
°C/W
q
JA
G
Total Device Dissipation,
P
D
FR−4 Board (Note 2) @ T = 25°C
Derate above 25°C
300
2.4
mW
mW/°C
A
xx
=
Specific Device Code
xx = (Refer to page 2)
Date Code*
Thermal Resistance,
Junction−to−Ambient (Note 2)
R
400
°C/W
q
JA
M
G
=
=
Pb−Free Package
Junction and Storage Temperature
Range
T , T
J
−55 to +150
°C
stg
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
2. FR−4 @ 1.0 × 1.0 Inch Pad
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
March, 2006 − Rev. 8
DTC114EET1/D
DTC114EET1 Series
ORDERING INFORMATION, DEVICE MARKING and RESISTOR VALUES
†
Device
DTC114EET1
Marking
R1 (K)
R2 (K)
Package
Shipping
SC−75/SOT−416
3000 Tape & Reel
3000 Tape & Reel
8A
10
10
DTC114EET1G
SC−75/SOT−416
(Pb−Free)
DTC124EET1
SC−75/SOT−416
3000 Tape & Reel
3000 Tape & Reel
8B
8C
8D
94
8F
8H
8J
22
47
22
47
47
∞
DTC124EET1G
SC−75/SOT−416
(Pb−Free)
DTC144EET1
SC−75/SOT−416
3000 Tape & Reel
3000 Tape & Reel
DTC144EET1G
SC−75/SOT−416
(Pb−Free)
DTC114YET1
SC−75/SOT−416
3000 Tape & Reel
3000 Tape & Reel
10
DTC114YET1G
SC−75/SOT−416
(Pb−Free)
DTC114TET1
SC−75/SOT−416
3000 Tape & Reel
3000 Tape & Reel
10
DTC114TET1G
SC−75/SOT−416
(Pb−Free)
DTC143TET1
SC−75/SOT−416
3000 Tape & Reel
3000 Tape & Reel
4.7
2.2
4.7
4.7
22
∞
DTC143TET1G
SC−75/SOT−416
(Pb−Free)
DTC123EET1
SC−75/SOT−416
3000 Tape & Reel
3000 Tape & Reel
2.2
4.7
47
47
47
DTC123EET1G
SC−75/SOT−416
(Pb−Free)
DTC143EET1
SC−75/SOT−416
3000 Tape & Reel
3000 Tape & Reel
DTC143EET1G
SC−75/SOT−416
(Pb−Free)
DTC143ZET1
SC−75/SOT−416
3000 Tape & Reel
3000 Tape & Reel
8K
8L
8M
DTC143ZET1G
SC−75/SOT−416
(Pb−Free)
DTC124XET1
SC−75/SOT−416
3000 Tape & Reel
3000 Tape & Reel
DTC124XET1G
SC−75/SOT−416
(Pb−Free)
DTC123JET1
SC−75/SOT−416
3000 Tape & Reel
3000 Tape & Reel
2.2
DTC123JET1G
SC−75/SOT−416
(Pb−Free)
DTC115EET1
SC−75/SOT−416
3000 Tape & Reel
3000 Tape & Reel
8N
8P
100
47
100
22
DTC115EET1G
SC−75/SOT−416
(Pb−Free)
DTC144WET1
SC−75/SOT−416
SC−75/SOT−416
3000 Tape & Reel
3000 Tape & Reel
DTC144WET1G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
DTC114EET1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (V = 50 V, I = 0)
I
I
−
−
−
−
100
500
nAdc
nAdc
mAdc
CB
E
CBO
CEO
Collector−Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
Emitter−Base Cutoff Current
(V = 6.0 V, I = 0)
DTC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC115EET1
DTC144WET1
I
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
EBO
EB
C
Collector−Base Breakdown Voltage (I = 10 mA, I = 0)
V
V
50
50
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
(BR)CEO
Collector−Emitter Breakdown Voltage (Note 3)
(I = 2.0 mA, I = 0)
C
B
ON CHARACTERISTICS (Note 3)
DC Current Gain
DTC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC115EET1
DTC144WET1
h
FE
35
60
80
60
−
−
−
−
−
−
−
−
−
−
−
−
−
(V = 10 V, I = 5.0 mA)
100
140
140
350
350
15
CE
C
80
160
160
8.0
15
80
80
80
80
80
30
200
150
140
150
140
Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)
V
CE(sat)
−
−
0.25
Vdc
Vdc
C
B
(I = 10 mA, I = 5 mA) DTC123EET1
C
B
(I = 10 mA, I = 1 mA) DTC143TET1/DTC114TET1/
C
B
DTC143EET1/DTC143ZET1/DTC124XET1
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)
V
OL
DTC114EET1
DTC124EET1
DTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC144EET1
DTC115EET1
DTC144WET1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V = 5.0 V, V = 3.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 5.5 V, R = 1.0 kW)
CC
B
L
(V = 5.0 V, V = 4.0 V, R = 1.0 kW)
CC
B
L
Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 kW)
V
4.9
−
−
Vdc
CC
B
L
OH
(V = 5.0 V, V = 0.25 V, R = 1.0 kW)
DTC143TET1
CC
B
L
DTC143ZET1
DTC114TET1
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
DTC114EET1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Input Resistor
TC114EET1
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
kW
DTC124EET1
DTC144EET1
DTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC115EET1
DTC144WET1
15.4
1.54
70
32.9
Resistor Ratio
DTC114EET1/DTC124EET1/DTC144EET1/
DTC115EET1
R /R
1 2
0.8
0.17
−
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
DTC114YET1
DTC143TET1/DTC114TET1
DTC123EET1/DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
0.8
1.2
0.055
0.38
0.038
1.7
0.185
0.56
0.056
2.6
DTC144WET1D
250
200
150
100
50
0
R
q
JA
= 600°C/W
−ꢀ50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 2. Normalized Thermal Response
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4
DTC114EET1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTC114EET1
1
1000
I /I = 10
C B
V
= 10 V
T ꢁ=ꢁ−25°C
A
CE
25°C
T ꢁ=ꢁ75°C
A
25°C
0.1
−25°C
75°C
100
0.01
0.001
10
0
20
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. VCE(sat) versus IC
Figure 4. DC Current Gain
4
3
100
10
25°C
75°C
f = 1 MHz
I = 0 V
E
T ꢁ=ꢁ−25°C
A
T = 25°C
A
1
0.1
2
1
0
0.01
0.001
V
= 5 V
9
O
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 5. Output Capacitance
Figure 6. Output Current versus Input Voltage
10
V
= 0.2 V
T ꢁ=ꢁ−25°C
A
O
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 7. Input Voltage versus Output Current
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5
DTC114EET1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTC123EET1
100
1
I /I = 10
C
B
75°C
0.1
0.01
25°C
75°C
−25°C
10
25°C
T = −25°C
A
V
= 10 V
CE
0.001
1
0
10
20
30
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 8. VCE(sat) versus IC
Figure 9. DC Current Gain
4.5
4
100
10
1
75°C
f = 1 MHz
= 0 V
T = 25°C
A
I
E
3.5
3
25°C
2.5
2
T = −25°C
A
0.1
1.5
1
0.01
V
= 5 V
O
0.5
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 10. Output Capacitance
Figure 11. Output Current versus Input Voltage
10
T = −25°C
A
75°C
1
25°C
V
= 0.2 V
40
O
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 12. Input Voltage versus Output Current
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6
DTC114EET1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTC124EET1
1000
1
V
= 10 V
CE
I /I = 10
C B
T ꢁ=ꢁ75°C
A
25°C
25°C
T ꢁ=ꢁ−25°C
A
0.1
−25°C
75°C
100
0.01
10
0.001
1
10
I , COLLECTOR CURRENT (mA)
100
0
20
I , COLLECTOR CURRENT (mA)
40
50
C
C
Figure 13. VCE(sat) versus IC
Figure 14. DC Current Gain
4
3
2
1
0
100
10
1
75°C
25°C
f = 1 MHz
I = 0 V
T ꢁ=ꢁ−25°C
A
E
T = 25°C
A
0.1
0.01
V
= 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 15. Output Capacitance
Figure 16. Output Current versus Input Voltage
100
V
= 0.2 V
O
T ꢁ=ꢁ−25°C
A
10
1
25°C
75°C
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 17. Input Voltage versus Output
Current
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7
DTC114EET1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTC144EET1
10
1
1000
V
= 10 V
CE
I /I = 10
C B
T ꢁ=ꢁ75°C
A
25°C
−25°C
25°C
75°C
100
T ꢁ=ꢁ−25°C
A
0.1
0.01
10
0
20
I , COLLECTOR CURRENT (mA)
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 18. VCE(sat) versus IC
Figure 19. DC Current Gain
1
100
10
1
25°C
f = 1 MHz
I = 0 V
75°C
E
T ꢁ=ꢁ−25°C
A
0.8
T = 25°C
A
0.6
0.4
0.1
0.01
0.2
0
V
= 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 20. Output Capacitance
Figure 21. Output Current versus Input Voltage
100
V
= 0.2 V
O
T ꢁ=ꢁ−25°C
A
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 22. Input Voltage versus Output Current
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8
DTC114EET1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTC114YET1
1
300
T ꢁ=ꢁ75°C
A
V
= 10
I /I = 10
C B
CE
T ꢁ=ꢁ−25°C
250
200
150
100
A
25°C
25°C
75°C
0.1
−25°C
0.01
50
0
0.001
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 23. VCE(sat) versus IC
Figure 24. DC Current Gain
4
3.5
3
100
10
1
f = 1 MHz
l = 0 V
T ꢁ=ꢁ75°C
25°C
A
E
T = 25°C
A
−25°C
2.5
2
1.5
1
0.5
0
V
= 5 V
O
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 25. Output Capacitance
Figure 26. Output Current versus Input Voltage
10
V
= 0.2 V
O
T ꢁ=ꢁ−25°C
A
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 27. Input Voltage versus Output Current
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9
DTC114EET1 Series
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM mP OR
OTHER LOGIC
Figure 28. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
V
CC
OUT
IN
LOAD
Figure 29. Open Collector Inverter:
Inverts the Input Signal
Figure 30. Inexpensive, Unregulated Current Source
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10
DTC114EET1 Series
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463−01
ISSUE F
NOTES:
−E−
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
MILLIMETERS
DIM MIN NOM MAX MIN
0.70
A1 0.00
INCHES
NOM MAX
3
e
−D−
A
0.80
0.05
0.90 0.027 0.031 0.035
0.10 0.000 0.002 0.004
0.30 0.006 0.008 0.012
0.25 0.004 0.006 0.010
1.65 0.059 0.063 0.067
0.90 0.027 0.031 0.035
0.04 BSC
1
b 3 PL
0.20 (0.008)
b
C
D
E
e
0.15
0.10
1.55
0.70
0.20
0.15
1.60
0.80
1.00 BSC
0.15
1.60
M
D
H
0.20 (0.008) E
E
L
0.10
1.50
0.20 0.004 0.006 0.008
1.70 0.061 0.063 0.065
H
E
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
A
L
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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DTC114EET1/D
相关型号：
DTC114EETL
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, EMT3, 3 PIN
ROHM
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