DFB20100 [ONSEMI]
玻璃钝化桥式整流器;型号: | DFB20100 |
厂家: | ONSEMI |
描述: | 玻璃钝化桥式整流器 |
文件: | 总6页 (文件大小:413K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
October 2013
DFB2005 - DFB20100
Glass-Passivated Bridge Rectifiers
Features
• UL Certificate: # E258596
• Glass-Passivated Junction
• Ideal for Printed Circuit Board
• Reliable Low-Cost Construction
• Plastic Material has Underwriters Laboratory Flammability Classification 94V-0
• Surge Overload Rating to 250 A Peak
• High Case Dielectric Strength: 2000 VRMS
• Isolated Voltage from Case to Lead: > 2500 V
+
~
~
-
TS-6P
Ordering Informations
Part Number
DFB2005
DFB2010
DFB2020
DFB2040
DFB2060
DFB2080
DFB20100
Marking
DFB2005
DFB2010
DFB2020
DFB2040
DFB2060
DFB2080
DFB20100
Package
Packing Method
TS-6P 4L
Rail
© 2009 Fairchild Semiconductor Corporation
DFB2005 - DFB20100 Rev. 1.2.2
www.fairchildsemi.com
1
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Value
Symbol
Parameter
Units
DFB
2005
DFB
2010
DFB
2020
DFB
2040
DFB
2060
DFB
DFB
2080 20100
Maximum
Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
VRMS
VDC
Maximum RMS Voltage
35
50
70
140
200
280
400
420
600
560
800
700
V
V
Maximum DC Blocking Voltage
100
1000
Maximum
Average Forward Rectified Current
I(AV)
20
A
Peak Forward Surge Current
(8.3 ms Single Half-wave)
IFSM
RθJC
250
A
Typical Thermal Resistance(2)
Operating Temperature Range
Storage Temperature Range
4.75
°C/W
TJ
TSTG
-55 to +150
-55 to +150
°C
°C
Notes:
1. Single-phase, half-wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
2. Device mounted on 4 inch x 5 inch x 0.25 inch Al-plate heat sink.
Electrical Characteristics
Values are at TA = 25°C unless otherwise specified.
Symbol
Parameter
Test condition
Value
1.0
Unit
Maximum
10 A
20 A
VF
V
Instantaneous Forward Voltage
1.1
TA = 25°C
10
Maximum DC Reverse Current
at Rated DC Blocking Voltage
IR
μA
TA = 125°C
500
259
140
I2t
Rating for Fusing (t < 8.3 ms)
A2s
pF
CJ
Typical Junction Capacitance per Leg(3)
Note:
3. Measured at 1 MHz and applied reverse bias of 4.0 V DC.
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
DFB2005 - DFB20100 Rev. 1.2.2
2
Typical Performance Characteristics
25
20
15
10
5
0
0
20
40
60
80 100 120 140 160
Case Temperature, [oC]
Figure 1. Maximum Derating Curve for Output
Current
Figure 2. Maximum Forward Surge Current per Leg
Figure 3. Typical Reverse Characteristics per Leg
Figure 4. Typical Forward Characteristics per Leg
Figure 5. Typical Junction Capacitance
© 2009 Fairchild Semiconductor Corporation
DFB2005 - DFB20100 Rev. 1.2.2
www.fairchildsemi.com
3
30.30
29.70
4.80
4.40
3.40
3.10
3.80
3.40
3.0 x45
20.30
19.70
4.80
11.20
10.80
4.20
3.80
+
~
~
-
2.50
2.90
2.50
2.40
2.00
18.00
17.00
(4X)
(4X)
1.10
0.90
0.70
0.60
7.70
7.30
7.70
7.30
10.20
9.80
NOTES:
A. THIS PACKAGE DOES NOT CONFORM TO
ANY STANDARDS.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
D. DRAWING FILE NAME: TS6P04AREV2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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