DAN222M3T5G [ONSEMI]
开关二极管，双，共阴极;
| 型号： | DAN222M3T5G |
| 厂家： | 
ONSEMI |
| 描述： | 开关二极管，双，共阴极 开关 光电二极管 |
| 文件： | 总5页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DAN222M3T5G
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SOT−723 package which is designed for low
power surface mount applications, where board space is at a premium.
http://onsemi.com
Features
CATHODE
3
• Fast t
rr
• Low C
D
• Available in 4 mm Tape and Reel
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
2
ANODE
MAXIMUM RATINGS (T = 25°C)
A
MARKING
DIAGRAM
Rating
Reverse Voltage
Symbol
Value
80
Unit
V
V
R
3
SOT−723
CASE 631AA
STYLE 3
Peak Reverse Voltage
Forward Current
V
80
V
RM
N9 M
I
100
mA
F
2
1
THERMAL CHARACTERISTICS
Rating
Symbol
Max
260
Unit
mW
°C
N9 = Specific Device Code
M = Date Code
Power Dissipation
P
D
Junction Temperature
Storage Temperature Range
T
J
150
ORDERING INFORMATION
T
stg
−55 to +150
°C
†
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1.0 mS.
Device
DAN222M3T5G
Package
Shipping
SOT−723
(Pb−Free)
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
January, 2013 − Rev. 6
DAN222M3/D
DAN222M3T5G
ELECTRICAL CHARACTERISTICS (T = 25°C)
A
Characteristic
Reverse Voltage Leakage Current (Note 2)
Forward Voltage
Symbol
Condition
= 70 V
Min
−
Max
0.1
1.2
−
Unit
mA
V
I
R
V
R
V
I = 100 mA
F
−
F
R
D
Reverse Breakdown Voltage
Diode Capacitance
V
C
I
R
= 100 mA
80
−
V
V
= 6.0 V, f = 1.0 MHz
3.5
4.0
pF
ns
R
Reverse Recovery Time (Note 3)
t
rr
I = 5.0 mA, V = 6.0 V,
−
F
R
R = 100 W, I = 0.1 I
L
rr
R
2. For each diode while other is not forward biased.
3. t Test Circuit on following page.
rr
TYPICAL ELECTRICAL CHARACTERISTICS
10
100
+150°C
+125°C
1.0
10
+85°C
+55°C
T = 150°C
A
1.0
0.1
125°C
0.01
0.1
-ꢀ40°C
-ꢀ55°C
+25°C
25°C
0.001
0.01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
10
20
30
40
50
60
70
80
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 1. Forward Voltage
Figure 2. Reverse Current
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0
5
10
15
20
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Diode Capacitance
http://onsemi.com
2
DAN222M3T5G
0.1 mF
Pulse Generator
DUT
510
+
100
IF
50 W Scope
RECOVERY TIME EQUIVALENT TEST CIRCUIT
t
r
t
p
t
rr
I
F
t
t
10%
I
rr
= 0.1 I
R
90%
I = 5.0 mA
F
V
= 6 V
R
V
R
R = 100 W
t = 100 ns
p
L
t = 0.4 ns
r
f = 5 kHz
V
R
= 6 V
INPUT PULSE
OUTPUT PULSE
Figure 4. Reverse Recovery Time Test Circuit
http://onsemi.com
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE D
DATE 10 AUG 2009
SCALE 4:1
NOTES:
−X−
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
D
A
b1
−Y−
3
E
HE
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
1
2
MILLIMETERS
2X b
3X
C
DIM MIN
NOM
0.50
0.21
0.31
0.12
1.20
0.80
MAX
0.55
0.27
0.37
0.17
1.25
0.85
2X e
0.08 X Y
A
b
0.45
0.15
0.25
0.07
1.15
0.75
SIDE VIEW
TOP VIEW
b1
C
L
D
1
E
0.40 BSC
1.20
0.29 REF
0.20
e
H E
L
1.15
0.15
1.25
0.25
L2
GENERIC
3X
L2
MARKING DIAGRAM*
BOTTOM VIEW
STYLE 1:
PIN 1. BASE
STYLE 2:
PIN 1. ANODE
2. N/C
STYLE 3:
STYLE 4:
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
PIN 1. ANODE
2. ANODE
PIN 1. CATHODE
2. CATHODE
3. ANODE
XX M
1
2. EMITTER
3. COLLECTOR
3. CATHODE
3. CATHODE
XX
M
= Specific Device Code
= Date Code
RECOMMENDED
SOLDERING FOOTPRINT*
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb−Free indicator, “G”, may
or not be present.
2X
0.40
2X 0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON12989D
SOT−723
PAGE 1 OF 1
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