CPH5871-TL-W [ONSEMI]

单 N 沟道,功率 MOSFET,带肖特基二极管,30V,3.5A,52mΩ;
CPH5871-TL-W
型号: CPH5871-TL-W
厂家: ONSEMI    ONSEMI
描述:

单 N 沟道,功率 MOSFET,带肖特基二极管,30V,3.5A,52mΩ

肖特基二极管
文件: 总6页 (文件大小:484K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CPH5871  
Power MOSFET  
30V, 52m, 3.5A, Single N-Channel  
with Schottky Diode  
www.onsemi.com  
Features  
V
R
(on) Max  
I
DSS  
DS  
D Max  
3.5A  
Composite Type with a N-channel Sillicon MOSFET and a  
Schottky Barrier Diode Contained in One Package  
Facilitating High-density Mounting  
ESD Diode-Protected Gate  
52m@ 4.5V  
74m@ 2.5V  
132m@ 1.8V  
[MOSFET]  
30V  
Pb-Free, Halogen Free and RoHS Compliance  
[MOSFET] High Speed Switching  
[MOSFET] 1.8V Drive  
Electrical Connection  
N-Channel  
[SBD]  
Short Reverse Recovery Time  
Low Forward Voltage  
5
4
3
[SBD]  
1 : Cathode  
2 : Drain  
3 : Gate  
4 : Source  
5 : Anode  
Specifications  
Absolute Maximum Ratings at Ta = 25°C  
Parameter  
Symbol  
Value  
Unit  
[MOSFET]  
1
2
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
V
30  
12  
V
V
A
DSS  
V
GSS  
I
3.5  
D
Packing Type : TL  
Marking  
Drain Current (Pulse)  
I
14  
A
DP  
PW10μs, duty cycle1%  
Power Dissipation  
When mounted on ceramic substrate  
(600mm2  
× 0.8mm) 1unit  
P
D
0.9  
W
TL  
Junction Temperature  
Tj  
150  
°C  
°C  
Storage Temperature  
Tstg  
55 to +125  
[SBD]  
Repetitive Peak Reverse Voltage  
Nonrepetitive Peak Reverse Surge Voltage  
Average Output Current  
V
V
30  
35  
1
V
V
A
RRM  
RSM  
I
O
Surge Forward Current  
50Hz sine wave, 1cycle  
I
10  
A
FSM  
Junction Temperature  
Storage Temperature  
Tj  
55 to +125  
55 to +125  
°C  
°C  
Tstg  
Thermal Resistance Ratings  
Parameter  
Symbol  
Value  
138.8  
Unit  
Junction to Ambient  
R
°C/W  
When mounted on ceramic substrate  
(600mm2  
× 0.8mm) 1unit  
θJA  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,  
damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 6 of this data sheet.  
© Semiconductor Components Industries, LLC, 2015  
March 2015 - Rev. 2  
1
Publication Order Number :  
CPH5871/D  
CPH5871  
Electrical Characteristics at Ta = 25°C  
Value  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
[MOSFET]  
Drain to Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate to Source Leakage Current  
Gate Threshold Voltage  
V(  
)
I
=1mA, V =0V  
GS  
30  
V
μA  
μA  
V
BR DSS  
D
I
I
V
V
V
V
=30V, V =0V  
GS  
1
DSS  
DS  
GS  
DS  
DS  
= 8V, V =0V  
DS  
10  
GSS  
V
GS  
(th)  
=10V, I =1mA  
0.4  
2.0  
1.3  
D
Forward Transconductance  
g
FS  
=10V, I =2A  
3.4  
S
D
R
R
R
(on)1  
(on)2  
(on)3  
I
I
I
=2A, V =4.5V  
GS  
40  
53  
52  
74  
mΩ  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
DS  
DS  
DS  
D
D
D
Static Drain to Source On-State Resistance  
=1A, V =2.5V  
GS  
=0.5A, V =1.8V  
GS  
82  
132  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Ciss  
430  
59  
Coss  
Crss  
V
=10V, f=1MHz  
DS  
38  
t (on)  
d
10  
t
41  
r
See specified Test Circuit  
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
36  
t
37  
f
Total Gate Charge  
Gate to Source Charge  
Gate to Drain “Miller” Charge  
Forward Diode Voltage  
[SBD]  
Qg  
4.7  
0.8  
1.1  
0.8  
Qgs  
Qgd  
V
=15V, V =4.5V, I =3.5A  
DS GS  
D
V
SD  
I =3.5A, V =0V  
1.2  
S
GS  
Reverse Voltage  
V
V
V
I
=0.5mA  
30  
V
V
R
R
I =0.7A  
0.45  
0.48  
0.5  
0.53  
15  
F1  
F2  
F
Forward Voltage  
I =1A  
V
F
Reverse Current  
I
V
=16V  
R
μA  
pF  
ns  
R
Interterminal Capacitance  
Reverse Recovery Time  
C
V
=10V, f=1MHz, 1cycle  
R
27  
t
I = I =100mA, See specified Test Circuit  
10  
rr  
F
R
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be  
indicated by the Electrical Characteristics if operated under different conditions.  
Switching Time Test Circuit  
(MOSFET)  
trr Test Circuit  
(SBD)  
V
=15V  
DD  
V
IN  
4.5V  
0V  
Duty≤10%  
I
=2A  
D
V
IN  
R =7.5Ω  
L
50Ω  
100Ω  
10Ω  
D
V
OUT  
PW=10μs  
D.C.≤1%  
10μs  
G
--5V  
t
rr  
CPH5871  
P.G  
50Ω  
S
www.onsemi.com  
2
CPH5871  
www.onsemi.com  
3
CPH5871  
www.onsemi.com  
4
CPH5871  
www.onsemi.com  
5
CPH5871  
Package Dimensions  
CPH5871-TL-H / CPH5871-TL-W  
CPH5  
CASE 318BC  
ISSUE O  
unit : mm  
1 : Cathode  
2 : Drain  
3 : Gate  
4 : Source  
5 : Anode  
Recommended  
Soldering Footprint  
0.6  
0.95  
0.95  
ORDERING INFORMATION  
Device  
Package  
CPH5  
Shipping  
Note  
CPH5871-TL-H  
Pb-Free  
and Halogen Free  
3,000 pcs. / Tape & Reel  
SC-74A, SOT-25  
CPH5871-TL-W  
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel  
Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF  
Note on usage : Since the CPH5871 is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States  
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of  
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without  
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose,  
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including  
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can  
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each  
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are  
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or  
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,  
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,  
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was  
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all  
applicable copyright laws and is not for resale in any manner.  
www.onsemi.com  
6

相关型号:

CPH5871_12

General-Purpose Switching Device Applications
SANYO

CPH5901

High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications
SANYO

CPH5901-G

Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction FET, CPH5, 5 PIN
ONSEMI

CPH5901F

TRANSISTOR,JFET,N-CHANNEL,15V V(BR)DSS,6MA I(DSS),SOT-25
ONSEMI

CPH5901F-TL-E

High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications
SANYO

CPH5901F-TL-E

N 沟道 JFET 和 NPN 双极晶体管,15V,6 至 20mA,50V,150mA,复合型 CPH5
ONSEMI

CPH5901G

TRANSISTOR,JFET,N-CHANNEL,15V V(BR)DSS,10MA I(DSS),SOT-25
ONSEMI

CPH5901G-TL-E

High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications
SANYO

CPH5901G-TL-E

N 沟道 JFET 和 NPN 双极晶体管,15V,6 至 20mA,50V,150mA,复合型 CPH5
ONSEMI

CPH5901_12

High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications
SANYO

CPH5902

High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications
SANYO

CPH5902G

TRANSISTOR,JFET,N-CHANNEL,15V V(BR)DSS,10MA I(DSS),SOT-25
ONSEMI