CPH5871-TL-W [ONSEMI]
单 N 沟道,功率 MOSFET,带肖特基二极管,30V,3.5A,52mΩ;型号: | CPH5871-TL-W |
厂家: | ONSEMI |
描述: | 单 N 沟道,功率 MOSFET,带肖特基二极管,30V,3.5A,52mΩ 肖特基二极管 |
文件: | 总6页 (文件大小:484K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CPH5871
Power MOSFET
30V, 52mΩ, 3.5A, Single N-Channel
with Schottky Diode
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Features
V
R
(on) Max
I
DSS
DS
D Max
3.5A
• Composite Type with a N-channel Sillicon MOSFET and a
Schottky Barrier Diode Contained in One Package
Facilitating High-density Mounting
• ESD Diode-Protected Gate
52mΩ@ 4.5V
74mΩ@ 2.5V
132mΩ@ 1.8V
[MOSFET]
30V
• Pb-Free, Halogen Free and RoHS Compliance
[MOSFET] • High Speed Switching
[MOSFET] • 1.8V Drive
Electrical Connection
N-Channel
[SBD]
• Short Reverse Recovery Time
• Low Forward Voltage
5
4
3
[SBD]
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Value
Unit
[MOSFET]
1
2
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
V
30
12
V
V
A
DSS
V
GSS
I
3.5
D
Packing Type : TL
Marking
Drain Current (Pulse)
I
14
A
DP
PW≤10μs, duty cycle≤1%
Power Dissipation
When mounted on ceramic substrate
(600mm2
× 0.8mm) 1unit
P
D
0.9
W
TL
Junction Temperature
Tj
150
°C
°C
Storage Temperature
Tstg
−55 to +125
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
V
V
30
35
1
V
V
A
RRM
RSM
I
O
Surge Forward Current
50Hz sine wave, 1cycle
I
10
A
FSM
Junction Temperature
Storage Temperature
Tj
−55 to +125
−55 to +125
°C
°C
Tstg
Thermal Resistance Ratings
Parameter
Symbol
Value
138.8
Unit
Junction to Ambient
R
°C/W
When mounted on ceramic substrate
(600mm2
× 0.8mm) 1unit
θJA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
March 2015 - Rev. 2
1
Publication Order Number :
CPH5871/D
CPH5871
Electrical Characteristics at Ta = 25°C
Value
typ
Parameter
Symbol
Conditions
Unit
min
max
[MOSFET]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
V(
)
I
=1mA, V =0V
GS
30
V
μA
μA
V
BR DSS
D
I
I
V
V
V
V
=30V, V =0V
GS
1
DSS
DS
GS
DS
DS
= 8V, V =0V
DS
10
GSS
V
GS
(th)
=10V, I =1mA
0.4
2.0
1.3
D
Forward Transconductance
g
FS
=10V, I =2A
3.4
S
D
R
R
R
(on)1
(on)2
(on)3
I
I
I
=2A, V =4.5V
GS
40
53
52
74
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
D
D
D
Static Drain to Source On-State Resistance
=1A, V =2.5V
GS
=0.5A, V =1.8V
GS
82
132
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Ciss
430
59
Coss
Crss
V
=10V, f=1MHz
DS
38
t (on)
d
10
t
41
r
See specified Test Circuit
Turn-OFF Delay Time
Fall Time
t (off)
d
36
t
37
f
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
[SBD]
Qg
4.7
0.8
1.1
0.8
Qgs
Qgd
V
=15V, V =4.5V, I =3.5A
DS GS
D
V
SD
I =3.5A, V =0V
1.2
S
GS
Reverse Voltage
V
V
V
I
=0.5mA
30
V
V
R
R
I =0.7A
0.45
0.48
0.5
0.53
15
F1
F2
F
Forward Voltage
I =1A
V
F
Reverse Current
I
V
=16V
R
μA
pF
ns
R
Interterminal Capacitance
Reverse Recovery Time
C
V
=10V, f=1MHz, 1cycle
R
27
t
I = I =100mA, See specified Test Circuit
10
rr
F
R
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
(MOSFET)
trr Test Circuit
(SBD)
V
=15V
DD
V
IN
4.5V
0V
Duty≤10%
I
=2A
D
V
IN
R =7.5Ω
L
50Ω
100Ω
10Ω
D
V
OUT
PW=10μs
D.C.≤1%
10μs
G
--5V
t
rr
CPH5871
P.G
50Ω
S
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2
CPH5871
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3
CPH5871
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4
CPH5871
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5
CPH5871
Package Dimensions
CPH5871-TL-H / CPH5871-TL-W
CPH5
CASE 318BC
ISSUE O
unit : mm
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Recommended
Soldering Footprint
0.6
0.95
0.95
ORDERING INFORMATION
Device
Package
CPH5
Shipping
Note
CPH5871-TL-H
Pb-Free
and Halogen Free
3,000 pcs. / Tape & Reel
SC-74A, SOT-25
CPH5871-TL-W
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel
Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the CPH5871 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
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6
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