CNY17F1SVM [ONSEMI]
6-Pin DIP High BVCEO Phototransistor Output Optocoupler, MDIP 6L, 1000-BULK;
| 型号： | CNY17F1SVM |
| 厂家： | 
ONSEMI |
| 描述： | 6-Pin DIP High BVCEO Phototransistor Output Optocoupler, MDIP 6L, 1000-BULK 输出元件 光电 |
| 文件： | 总14页 (文件大小：432K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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October 2014
CNY171M, CNY172M, CNY173M, CNY174M,
CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M,
MOC8106M
6-Pin DIP High BVCEO Phototransistor Optocouplers
Features
Description
■ High BV
: 70 V Minimum (CNY17XM, CNY17FXM,
The CNY17XM, CNY17FXM, and MOC8106M devices
consist of a gallium arsenide infrared emitting diode
coupled with an NPN phototransistor in a dual in-line
package.
CEO
MOC8106M)
■ Closely Matched Current Transfer Ratio (CTR)
Minimizes Unit-to-Unit Variation
■ Current Transfer Ratio In Select Groups
Package Outlines
■ Very Low Coupled Capacitance Along With
No Chip-to-Pin 6 Base Connection for Minimum Noise
Susceptability (CNY17FXM, MOC8106M)
■ Safety and Regulatory Approvals:
– UL1577, 4,170 VAC
for 1 Minute
RMS
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
■ Power Supply Regulators
■ Digital Logic Inputs
■ Microprocessor Inputs
■ Appliance Sensor Systems
■ Industrial Controls
Figure 1. Package Outlines
Schematics
1
2
6
1
2
6
BASE
ANODE
NC
ANODE
CATHODE
5 COLLECTOR
4 EMITTER
CATHODE
5 COLLECTOR
4 EMITTER
3
3
NC
NC
CNY17F1M/2M/3M/4M
MOC8106M
CNY171M/2M/3M/4M
Figure 2. Schematics
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
< 150 V
< 300 V
I–IV
I–IV
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
RMS
RMS
Climatic Classification
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
Input-to-Output Test Voltage, Method A, V
x 1.6 = V
,
IORM
PR
1360
V
V
peak
peak
Type and Sample Test with t = 10 s, Partial Discharge < 5 pC
m
V
PR
Input-to-Output Test Voltage, Method B, V
x 1.875 = V
,
IORM
PR
1594
100% Production Test with t = 1 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over-Voltage
850
6000
≥ 7
V
V
IORM
peak
V
IOTM
peak
External Creepage
mm
mm
mm
mm
°C
External Clearance
≥ 7
External Clearance (for Option TV, 0.4" Lead Spacing)
Distance Through Insulation (Insulation Thickness)
≥ 10
≥ 0.5
175
350
800
DTI
(1)
T
Case Temperature
S
(1)
I
Input Current
mA
mW
Ω
S,INPUT
(1)
P
Output Power
S,OUTPUT
(1)
9
R
Insulation Resistance at T , V = 500 V
> 10
IO
S
IO
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameters
Value
Units
TOTAL DEVICE
T
Storage Temperature
-40 to +125
-40 to +100
-40 to +125
260 for 10 seconds
270
°C
°C
STG
T
Ambient Operating Temperature
Junction Temperature
A
T
ºC
J
T
Lead Solder Temperature
°C
SOL
mW
mW/°C
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
P
D
2.94
EMITTER
I
Continuous Forward Current
Reverse Voltage
60
6
mA
V
F
V
R
I (pk)
Forward Current – Peak (1 µs pulse, 300 pps)
1.5
120
1.41
A
F
mW
mW/°C
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
P
D
DETECTOR
I
Continuous Collector Current
Collector-Emitter Voltage
Emitter Collector Voltage
50
70
mA
V
C
V
V
CEO
ECO
7
V
150
1.76
mW
mW/°C
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
P
D
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
3
Electrical Characteristics
T = 25°C unless otherwise specified.
A
Individual Component Characteristics
Symbol
EMITTER
Parameters
Test Conditions
Device
Min. Typ. Max. Units
I = 10 mA
All Devices
1.0
1.0
1.15
1.35
18
1.50
1.65
V
V
F
V
Input Forward Voltage
Capacitance
CNY17XM,
CNY17FXM
F
I = 60 mA
F
C
V = 0 V, f = 1.0 MHz
All Devices
pF
µA
J
F
Reverse Leakage
Current
I
V = 6 V
All Devices
0.001
10
R
R
DETECTOR
Breakdown Voltage
Collector-to-Emitter I = 1 mA, I = 0
BV
BV
BV
All Devices
CNY17XM
All Devices
70
70
7
100
120
10
V
V
V
CEO
CBO
ECO
C
F
Collector-to-Base
I = 10 µA, I = 0
C F
Emitter-to-Collector I = 100 µA, I = 0
E
F
Leakage Current
Collector-to-Emitter
Collector-to-Base
Capacitance
I
I
V
= 10 V, I = 0
All Devices
CNY17XM
1
50
20
nA
nA
CEO
CE
F
V
= 10 V, I = 0
CBO
CB
F
C
Collector-to-Emitter
Collector-to-Base
Emitter-to-Base
V
V
V
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
All Devices
CNY17XM
CNY17XM
8
pF
pF
pF
CE
CB
EB
CE
CB
EB
C
20
10
C
Transfer Characteristics
Symbol
Parameters
Test Conditions
Device
Min. Typ. Max. Units
COUPLED
I = 10 mA, V = 10 V
MOC8106M
50
40
63
150
80
%
%
%
%
%
F
CE
I = 10 mA, V = 5 V
CNY171M, CNY17F1M
CNY172M, CNY17F2M
F
CE
Current Transfer
Ratio
I = 10 mA, V = 5 V
125
200
320
CTR
F
CE
I = 10 mA, V = 5 V
CNY173M, CNY17F3M 100
CNY174M, CNY17F4M 160
MOC8106M
F
CE
I = 10 mA, V = 5 V
F
CE
I
I
= 0.5 mA, I = 5 mA
Collector-Emitter
Saturation Voltage
C
C
F
V
0.4
V
CE(SAT)
= 2.5 mA, I = 10 mA
CNY17XM/CNY17FXM
F
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
4
Electrical Characteristics (Continued)
T = 25°C unless otherwise specified.
A
AC Characteristics
Symbol Parameters
Test Conditions
Device
Min. Typ. Max. Units
NON-SATURATED SWITCHING TIME
t
t
Turn-On Time
Turn-Off Time
Delay Time
Rise Time
I
I
= 2.0 mA, V = 10 V, R = 100 Ω All Devices
2.0
3.0
10.0
10.0
5.6
µs
µs
µs
µs
µs
µs
on
off
C
C
CC
L
= 2.0 mA, V = 10 V, R = 100 Ω All Devices
CC
L
t
I = 10 mA, V = 5 V, R = 75 Ω
CNY17XM/CNY17FXM
CNY17XM/CNY17FXM
CNY17XM/CNY17FXM
CNY17XM/CNY17FXM
d
F
CC
L
t
I = 10 mA, V = 5 V, R = 75 Ω
4.0
r
F
CC
L
t
Storage Time
Fall Time
I = 10 mA, V = 5 V, R = 75 Ω
4.1
s
F
CC
L
t
I = 10 mA, V = 5 V, R = 75 Ω
3.5
f
F
CC
L
SATURATED SWITCHING TIMES
I = 20 mA, V = 5 V, R = 1 kΩ
CNY171M/F1M
5.5
8.0
µs
µs
µs
µs
µs
µs
µs
µs
F
CC
L
t
Delay Time
Rise Time
Storage Time
Fall Time
CNY172M/3M/4M
CNY17F2M/F3M/F4M
d
I = 10 mA, V = 5 V, R = 1 kΩ
F
CC
L
I = 20 mA, V = 5 V, R = 1 kΩ
CNY171M/F1M
4.0
F
CC
L
t
CNY172M/3M/4M
CNY17F2M/F3M/F4M
r
I = 10 mA, V
= 5 V, R = 1 kΩ
6.0
F
CC
L
I = 20 mA, V = 5 V, R = 1 kΩ
CNY171M/F1M
34.0
39.0
20.0
24.0
F
CC
L
t
CNY172M/3M/4M
CNY17F2M/F3M/F4M
s
I = 10 mA, V = 5 V, R = 1 kΩ
F
CC
L
I = 20 mA, V = 5 V, R = 1 kΩ
CNY171M/F1M
F
CC
L
t
CNY172M/3M/4M
CNY17F2M/F3M/F4M
f
I = 10 mA, V = 5 V, R = 1 kΩ
F
CC
L
Isolation Characteristics
Symbol Characteristic
Test Conditions
Min.
Typ.
Max.
Units
V
C
R
Input-Output Isolation Voltage t = 1 Minute
4170
VAC
RMS
ISO
ISO
ISO
Isolation Capacitance
Isolation Resistance
V
V
= 0 V, f = 1 MHz
0.2
pF
I-O
I-O
11
= 500 VDC, T = 25°C
10
Ω
A
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
5
Typical Performance Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.6
V
T
= 5.0 V
Normalized to
= 10 mA
CE
= 25˚C
I
A
F
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
= 5 mA
F
I
I
= 10 mA
= 20 mA
F
F
Normalized to:
= 10 mA
I
F
T
= 25˚C
A
-60
-40
-20
0
20
40
60
80
100
0
2
4
6
8
10
12
14
16
18
20
I
– FORWARD CURRENT (mA)
F
T
A
– AMBIENT TEMPERATURE (˚C)
Figure 3. Normalized CTR vs. Forward Current
Figure 4. Normalized CTR vs. Ambient Temperature
1.0
0.9
1.0
0.9
0.8
I
= 20 mA
F
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
F
= 10 mA
I
= 5 mA
V
CE
= 0.3 V
F
I
= 20 mA
= 10 mA
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
F
I
F
I
= 5 mA
F
V
= 5.0 V
CE
10
100
1000
10
100
1000
R
BE
– BASE RESISTANCE (kΩ)
R
– BASE RESISTANCE (kΩ)
BE
Figure 5. CTR vs. RBE (Unsaturated)
Figure 6. CTR vs. RBE (Saturated)
1000
100
10
I
V
T
= 10 mA
F
= 10 V
CC
= 25˚C
A
5.0
V
10 V
CC =
= 2 mA
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
C
R
= 100 Ω
L
T
f
T
off
T
on
T
r
1
0.1
0.1
1
10
100
10
100
1000
10000
100000
R – LOAD RESISTOR (kΩ)
R
– BASE RESISTANCE (kΩ)
BE
Figure 7. Switching Speed vs. Load Resistor
Figure 8. Normalized t vs. R
on BE
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
6
Typical Performance Characteristics (Continued)
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
T
= -55°C
= 25°C
= 100°C
A
T
A
V
I
R
10V
CC =
= 2mA
0.4
0.3
0.2
0.1
C
T
A
= 100Ω
L
1
10
100
10
100
1000
10000
100000
I – LED FORWARD CURRENT (mA)
F
R
BE
– BASE RESISTANCE (kΩ)
Figure 9. Normalized t vs. R
off
BE
Figure 10. LED Forward Voltage vs. Forward Current
100
T
= 25˚C
A
10
1
I
= 2.5mA
F
0.1
I
= 20mA
F
0.01
0.001
I
= 5mA
F
I
= 10mA
F
0.01
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
Figure 11. Collector-Emitter Saturation Voltage vs. Collector Current
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
7
Switching Test Circuit and Waveforms
VCC
INPUT PULSE
10%
90%
RL
IC
OUTPUT PULSE
IF
INPUT
OUTPUT (V
)
td
ton
ts
CE
tf
tr
toff
Figure 12. Switching Test Circuit and Waveforms
Reflow Profile
300
260°C
280
260
240
220
200
180
160
140
120
100
80
> 245°C = 42 s
Time above
183°C = 90 s
°C
1.822°C/s Ramp-up rate
60
40
33 s
20
0
0
60
120
180
270
360
Time (s)
Figure 13. Reflow Profile
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
8
Ordering Information
Part Number
Package
Packing Method
CNY171M
DIP 6-Pin
Tube (50 Units)
CNY171SM
CNY171SR2M
CNY171TM
CNY171VM
CNY171SVM
SMT 6-Pin (Lead Bend)
SMT 6-Pin (Lead Bend)
Tube (50 Units)
Tape and Reel (1000 Units)
Tube (50 Units)
DIP 6-Pin, 0.4” Lead Spacing
DIP 6-Pin, DIN EN/IEC60747-5-5 Option
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
Tube (50 Units)
Tube (50 Units)
CNY171SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
Tape and Reel (1000 Units)
Tube (50 Units)
CNY171TVM
DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option
Note:
2. The product orderable part number system listed in this table also applies to the CNY17FXM product family and the
MOC8106M device.
Marking Information
1
2
CNY17-1
6
V
X YY Q
5
3
4
Figure 14. Top Mark
Table 1. Top Mark Definitions
1
2
3
4
5
6
Fairchild Logo
Device Number
DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
One-Digit Year Code, e.g., “4”
Digit Work Week, Ranging from “01” to “53”
Assembly Package Code
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
9
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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