CM1485-02SE [ONSEMI]
2 沟道 EMI 滤波器 (C-R-C)，带 ESD 保护;
| 型号： | CM1485-02SE |
| 厂家： | 
ONSEMI |
| 描述： | 2 沟道 EMI 滤波器 (C-R-C)，带 ESD 保护 |
| 文件： | 总7页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CM1485
Dual Channel EMI Filter
with ESD Protection
Product Description
The CM1485 is a 2 channel pi-style EMI filter array with ESD
protection, housed in a 6−lead SOT−563 package. The CM1485 has
component values of 12 pF − 100 W − 12 pF per channel. The
CM1485 has a cut−off frequency of 125 MHz and can be used in
applications with data rates up to 48 Mbps. The parts include ESD
diodes on every pin, which provide a very high level of protection for
sensitive electronic components that may be subjected to electrostatic
discharge (ESD). The ESD protection diodes safely dissipate ESD
strikes of 15 kV, well beyond the maximum requirement of the
IEC61000−4−2 international standard. Using the MIL−STD−883
(Method 3015) specification for Human Body Model (HBM) ESD, the
pins are protected for contact discharges at greater than 30 kV.
This device is particularly well−suited for portable electronics
(e.g. wireless handsets, PDAs, notebook computers) because of its
small package and easy-to-use pin assignments. In particular, the
CM1485 is ideal for EMI filtering and protecting data and control lines
for the I/O data ports, LCD display and camera interface in mobile
handsets.
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SOT−563
SE SUFFIX
CASE 463A
ELECTRICAL SCHEMATIC
100 W
Filter
+
Filter
+
ESDn*
R
ESDn*
C
C
12 pF
12 pF
GND
The CM1485 is housed in a small, 6−lead SOT−563 package and is
available with lead−free finishing.
1 of 2 EMI/RFI + ESD Channels
* See Package/Pinout Diagrams for expanded pin information.
Features
• Two Channels of EMI Filtering with Integrated ESD Protection
• Pi−Style EMI Filters in a Capacitor−Resistor−Capacitor (C−R−C)
Network
MARKING DIAGRAM
•
15 kV ESD Protection on Each Channel
(IEC 61000−4−2 Level 4, Contact Discharge)
30 kV ESD Protection on Each Channel (HBM)
N85 M G
1
•
N85= CM1485−02SE
• Greater than 30 dB Attenuation (Typical) at 1 GHz
• 6−lead SOT−563 Package
M
G
= Month Code
= Pb−Free Package
• These Devices are Pb−Free and are RoHS Compliant
ORDERING INFORMATION
Applications
†
Device
CM1485−02SE
Package
Shipping
• LCD and Camera Data Lines in Mobile Handsets
• I/O Port Protection for Mobile Handsets, Notebook Computers,
PDAs, etc.
• EMI Filtering for Data Ports in Cell Phones, PDAs or Notebook
Computers
SOT−563 5000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
• Wireless Handsets
• Handheld PCs/PDAs
• LCD and Camera Modules
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
April, 2011 − Rev. 3
CM1485/D
CM1485
PACKAGE / PINOUT DIAGRAMS
Table 1. PIN DESCRIPTIONS
6−Lead SOT−563 Package
Description
Filter + ESD Channel 1
Top View
Pin
1
Name
FILTER1
GND
CH1
1
5
CH2
2
Ground (Note 1)
GND
CH1
2
3
5
4
GND
CH2
3
FILTER1
FILTER2
GND
Filter + ESD Channel 1
Filter + ESD Channel 2
Ground (Note 1)
4
5
6−Lead SOT−563
6
FILTER2
Filter + ESD Channel 2
1. Pin 2 and Pin 5 must be well grounded at the same time.
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
°C
Storage Temperature Range
DC Power per Resistor
−65 to +150
100
mW
W
DC Package Power Rating
0.15
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Rating
Units
–40 to +85
°C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
Min
90
Typ
100
24.0
Max
Units
W
R
Resistance
110
C
I
Total Channel Capacitance
At 2.5 V DC Reverse Bias,
1 MHz, 30 mV AC
19.2
28.8
pF
TOTAL
Diode Leakage Current (Reverse Bias)
V
DIODE
= +3.0 V
1.0
mA
LEAK
V
BR
Breakdown Voltage
Positive Clamp
V
I
= 1 mA
6.0
7.0
LOAD
V
ESD
In−system ESD Withstand Voltage
a) Human Body Model, MIL−STD−883,
Method 3015
b) Contact Discharge per
IEC 61000−4−2 Level 4
(Note 2)
kV
30
15
R
Dynamic Resistance
Positive
Negative
W
DYN
2.3
0.9
f
Cut−off Frequency
MHz
dB
C
Z
= 50 W, Z
= 50 W
125
35
SOURCE
LOAD
A
Absolute Attenuation @ 1 GHz from 0 dB Level
Z
= 50 W, Z
= 50 W,
1GHz
SOURCE
LOAD
DC Bias = 0 V (Notes 1 and 3)
A
Absolute Attenuation @ 800 MHz to 1 GHz
from 0 dB Level
Z
= 50 W, Z = 50 W,
30
dB
800MHz − 6GHz
SOURCE
LOAD
DC Bias = 0 V (Notes 1 and 3)
1. T = 25°C unless otherwise specified.
A
2. ESD applied to input and output pins with respect to GND, one at a time.
3. Attenuation / RF curves characterized by a network analyzer using microprobes.
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2
CM1485
PERFORMANCE INFORMATION
Typical Filter Performance (TA = 255C, DC Bias = 0 V, 50 W Environment)
Figure 1. Insertion Loss vs. Frequency (FILTER1 Input to GND)
Figure 2. Insertion Loss vs. Frequency (FILTER2 Input to GND)
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3
CM1485
PERFORMANCE INFORMATION (Cont’d)
Figure 3. Filter Capacitance vs. Input Voltage
(normalized to capacitance at 2.5 V DC and 255C)
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
6
ISSUE H
1
DATE 26 JAN 2021
SCALE 4:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOT−563, 6 LEAD
CASE 463A
ISSUE H
DATE 26 JAN 2021
GENERIC
MARKING DIAGRAM*
XX MG
1
XX = Specific Device Code
M
= Month Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11126D
SOT−563, 6 LEAD
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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