CAT28C64BHFJI-12TE13 [ONSEMI]

IC 8K X 8 EEPROM 5V, 120 ns, PDSO28, 0.300 INCH, SOIC-28, Programmable ROM;
CAT28C64BHFJI-12TE13
元器件型号: CAT28C64BHFJI-12TE13
生产厂家: ON SEMICONDUCTOR    ON SEMICONDUCTOR
描述和应用:

IC 8K X 8 EEPROM 5V, 120 ns, PDSO28, 0.300 INCH, SOIC-28, Programmable ROM

可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
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型号参数:CAT28C64BHFJI-12TE13参数
是否无铅 含铅
是否Rohs认证 不符合
生命周期Obsolete
零件包装代码SOIC
包装说明SOP,
针数28
Reach Compliance Codecompliant
ECCN代码EAR99
HTS代码8542.32.00.51
风险等级5.01
最长访问时间120 ns
JESD-30 代码R-PDSO-G28
JESD-609代码e0
长度17.9 mm
内存密度65536 bit
内存集成电路类型EEPROM
内存宽度8
湿度敏感等级1
功能数量1
端子数量28
字数8192 words
字数代码8000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织8KX8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装形状RECTANGULAR
封装形式SMALL OUTLINE
并行/串行PARALLEL
峰值回流温度(摄氏度)240
编程电压5 V
认证状态Not Qualified
座面最大高度2.65 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层TIN LEAD
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
宽度7.5 mm
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
CAT28C64B
64K-Bit CMOS PARALLEL EEPROM
FEATURES
s
Fast read access times:
s
Commercial, industrial and automotive
– 90/120/150ns
s
Low power CMOS dissipation:
temperature ranges
s
Automatic page write operation:
– Active: 25 mA max.
– Standby: 100
µ
A max.
s
Simple write operation:
– 1 to 32 bytes in 5ms
– Page load timer
s
End of write detection:
– On-chip address and data latches
– Self-timed write cycle with auto-clear
s
Fast write cycle time:
– Toggle bit
DATA
polling
s
100,000 program/erase cycles
s
100 year data retention
– 5ms max.
s
CMOS and TTL compatible I/O
s
Hardware and software write protection
DESCRIPTION
The CAT28C64B is a fast, low power, 5V-only CMOS
Parallel EEPROM organized as 8K x 8-bits. It requires a
simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with
auto-clear and V
CC
power up/down write protection
eliminate additional timing and protection hardware.
DATA
Polling and Toggle status bits signal the start and
end of the self-timed write cycle. Additionally, the
CAT28C64B features hardware and software write
protection.
The CAT28C64B is manufactured using Catalyst’s
advanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 100 years. The device is available in JEDEC-
approved 28-pin DIP, TSOP, SOIC, or, 32-pin PLCC
package .
BLOCK DIAGRAM
A5–A12
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
ROW
DECODER
8,192 x 8
EEPROM
ARRAY
32 BYTE PAGE
REGISTER
VCC
HIGH VOLTAGE
GENERATOR
CE
OE
WE
CONTROL
LOGIC
I/O BUFFERS
TIMER
DATA POLLING
AND
TOGGLE BIT
COLUMN
DECODER
I/O0–I/O7
A0–A4
ADDR. BUFFER
& LATCHES
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
1
Doc. No. MD-1011, Rev. I
CAT28C64B
PIN CONFIGURATION
DIP Package (P, L)
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
SOIC Package (J, W) (K, X)
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PLCC Package (N, G)
A7
A12
NC
NC
VCC
WE
NC
TSOP Package (8mm x 13.4mm) (H13)
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
4 3 2 1 32 31 30
5
29
6
28
7
27
8
26
9
25
TOP VIEW
10
24
11
23
12
22
13
21
14 15 16 17 18 19 20
I/O1
I/O2
VSS
NC
I/O3
I/O4
I/O5
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
OE
A11
A9
A8
NC
WE
VCC
NC
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
PIN FUNCTIONS
Pin Name
A
0
–A
12
I/O
0
–I/O
7
CE
OE
Function
Address Inputs
Data Inputs/Outputs
Chip Enable
Output Enable
Pin Name
WE
V
CC
V
SS
NC
Function
Write Enable
5 V Supply
Ground
No Connect
Doc. No. MD-1011, Rev. I
2
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
CAT28C64B
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55°C to +125°C
Storage Temperature ....................... –65°C to +150°C
Voltage on Any Pin with
Respect to Ground
(2)
........... –2.0V to +V
CC
+ 2.0V
V
CC
with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current
(3)
........................ 100 mA
RELIABILITY CHARACTERISTICS
Symbol
N
END(1)
T
DR(1)
V
ZAP(1)
I
LTH(1)(4)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch-Up
Min.
10
5
100
2000
100
Max.
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
Units
Cycles/Byte
Years
Volts
mA
Test Method
MIL-STD-883, Test Method 1033
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 3015
JEDEC Standard 17
MODE SELECTION
Mode
Read
Byte Write (WE Controlled)
Byte Write (CE Controlled)
Standby, and Write Inhibit
Read and Write Inhibit
H
X
CE
L
L
L
X
H
WE
H
OE
L
H
H
X
H
I/O
D
OUT
D
IN
D
IN
High-Z
High-Z
Power
ACTIVE
ACTIVE
ACTIVE
STANDBY
ACTIVE
CAPACITANCE
T
A
= 25°C, f = 1.0 MHz, V
CC
= 5V
Symbol
C
I/O(1)
C
IN(1)
Test
Input/Output Capacitance
Input Capacitance
Max.
10
6
Units
pF
pF
Conditions
V
I/O
= 0V
V
IN
= 0V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+0.5V, which may overshoot to V
CC
+2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to V
CC
+1V.
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
3
Doc. No. MD-1011, Rev. I
CAT28C64B
D.C. OPERATING CHARACTERISTICS
V
CC
= 5V
±10%,
unless otherwise specified.
Limits
Symbol
I
CC
I
CCC(1)
I
SB
I
SBC(2)
I
LI
I
LO
V
IH(2)
V
IL(1)
V
OH
V
OL
V
WI
Parameter
V
CC
Current (Operating, TTL)
V
CC
Current (Operating, CMOS)
V
CC
Current (Standby, TTL)
V
CC
Current (Standby, CMOS)
Input Leakage Current
Output Leakage Current
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Write Inhibit Voltage
3.5
–10
–10
2
–0.3
2.4
0.4
Min.
Typ.
Max.
30
25
1
100
10
10
V
CC
+0.3
0.8
Units
mA
mA
mA
µA
µA
µA
V
V
V
V
V
I
OH
= –400µA
I
OL
= 2.1mA
Test Conditions
CE
=
OE
= V
IL
,
f = 1/t
RC
min, All I/O’s Open
CE
=
OE
= V
ILC
,
f = 1/t
RC
min, All I/O’s Open
CE
= V
IH
, All I/O’s Open
CE
= V
IHC
,
All I/O’s Open
V
IN
= GND to V
CC
V
OUT
= GND to V
CC
,
CE
= V
IH
Note:
(1) V
ILC
= –0.3V to +0.3V.
(2) V
IHC
= V
CC
–0.3V to V
CC
+0.3V.
Doc. No. MD-1011, Rev. I
4
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
CAT28C64B
A.C. CHARACTERISTICS, Read Cycle
V
CC
= 5V
±10%,
unless otherwise specified.
28C64B-90
Symbol Parameter
t
RC
t
CE
t
AA
t
OE
t
LZ(1)
t
OLZ(1)
t
HZ(1)(2)
t
OHZ(1)(2)
t
OH(1)
Read Cycle Time
CE
Access Time
Address Access Time
OE
Access Time
CE
Low to Active Output
OE
Low to Active Output
CE
High to High-Z Output
OE
High to High-Z Output
Output Hold from Address Change
0
0
0
50
50
0
Min.
90
90
90
50
0
0
50
50
0
Max.
28C64B-12
Min.
120
120
120
60
0
0
50
50
Max.
28C64B-15
Min.
150
150
150
70
Max.
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Figure 1. A.C. Testing Input/Output Waveform(3)
VCC - 0.3V
INPUT PULSE LEVELS
0.0 V
0.8 V
2.0 V
REFERENCE POINTS
Figure 2. A.C. Testing Load Circuit (example)
1.3V
1N914
3.3K
DEVICE
UNDER
TEST
OUT
CL = 100 pF
CL INCLUDES JIG CAPACITANCE
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer.
(3) Input rise and fall times (10% and 90%) < 10 ns.
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
5
Doc. No. MD-1011, Rev. I
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