C106D [ONSEMI]
Sensitive Gate Silicon Controlled Rectifiers; 敏感栅硅控整流器
| 型号： | C106D |
| 厂家： | 
ONSEMI |
| 描述： | Sensitive Gate Silicon Controlled Rectifiers |
| 文件： | 总6页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
C106 Series
Preferred Devices
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Glassivated PNPN devices designed for high volume consumer
applications such as temperature, light, and speed control; process and
remote control, and warning systems where reliability of operation is
important.
http://onsemi.com
SCRs
Features
4 A RMS, 200 − 600 Volts
• Glassivated Surface for Reliability and Uniformity
• Power Rated at Economical Prices
• Practical Level Triggering and Holding Characteristics
G
A
• Flat, Rugged, Thermopad Construction for Low Thermal Resistance,
K
High Heat Dissipation and Durability
• Sensitive Gate Triggering
• Pb−Free Packages are Available*
TO−225AA
CASE 077
STYLE 2
MARKING DIAGRAM & PIN ASSIGNMENT
1. Cathode
YWW
2. Anode
C106xxG
3. Gate
Y
= Year
WW
= Work Week
C106xx = Device Code
xx
G
= B, D, D1, M, M1
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
August, 2005 − Rev. 8
C106/D
C106 Series
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Max
Unit
Peak Repetitive Off−State Voltage (Note 1)
V
V
DRM,
(Sine Wave, 50−60 Hz, R = 1 kW,
V
RRM
GK
T
= −40° to 110°C)
C
C106B
C106D, C106D1*
C106M, C106M1*
200
400
600
On-State RMS Current
(180° Conduction Angles, T = 80°C)
I
4.0
2.55
20
A
A
A
T(RMS)
C
Average On−State Current
(180° Conduction Angles, T = 80°C)
I
T(AV)
C
Peak Non-Repetitive Surge Current
I
TSM
(1/2 Cycle, Sine Wave, 60 Hz, T = +110°C)
J
2
2
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power
I t
1.65
0.5
A s
P
W
W
A
GM
(Pulse Width v1.0 msec, T = 80°C)
C
Forward Average Gate Power
P
0.1
0.2
G(AV)
(Pulse Width v1.0 msec, T = 80°C)
C
Forward Peak Gate Current
I
GM
(Pulse Width v1.0 msec, T = 80°C)
C
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque (Note 2)
T
−40 to +110
−40 to +150
6.0
°C
°C
J
T
stg
in. lb.
−
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. V
and V
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
DRM
RRM
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Anode lead and heatsink contact pad are common.
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
Max
3.0
75
Unit
°C/W
°C/W
°C
R
q
JC
JA
L
Thermal Resistance, Junction−to−Ambient
R
q
Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds
T
260
ORDERING INFORMATION
†
Device
Package
Shipping
C106B
TO−225AA
500 Units / Box
500 Units / Box
C106BG
TO−225AA
(Pb−Free)
C106D
TO−225AA
500 Units / Box
500 Units / Box
C106DG
TO−225AA
(Pb−Free)
C106D1*
TO−225AA
500 Units / Box
500 Units / Box
C106D1G*
TO−225AA
(Pb−Free)
C106M
TO−225AA
500 Units / Box
500 Units / Box
C106MG
TO−225AA
(Pb−Free)
C106M1*
TO−225AA
500 Units / Box
500 Units / Box
C106M1G*
TO−225AA
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*D1 signifies European equivalent for D suffix and M1 signifies European equivalent for M suffix.
http://onsemi.com
2
C106 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Peak Repetitive Forward or Reverse Blocking Current
I
, I
DRM RRM
(V = Rated V
or V
, R = 1000 Ohms)
T = 25°C
T = 110°C
J
−
−
−
−
10
100
mA
mA
AK
DRM
RRM
GK
J
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 3)
V
−
−
2.2
V
TM
(I = 4 A)
TM
Gate Trigger Current (Continuous dc) (Note 4)
(V = 6 Vdc, R = 100 Ohms)
I
mA
GT
T = 25°C
T = −40°C
J
−
−
15
35
200
500
AK
L
J
Peak Reverse Gate Voltage (I
= 10 mA)
V
−
−
6.0
V
V
GR
GRM
Gate Trigger Voltage (Continuous dc) (Note 4)
(V = 6 Vdc, R = 100 Ohms)
V
GT
T = 25°C
T = −40°C
J
0.4
0.5
0.60
0.75
0.8
1.0
AK
L
J
Gate Non−Trigger Voltage (Continuous dc) (Note 4)
V
0.2
−
−
V
GD
(V = 12 V, R = 100 Ohms, T = 110°C)
AK
L
J
Latching Current
I
mA
L
(V = 12 V, I = 20 mA)
T = 25°C
T = −40°C
J
−
−
0.20
0.35
5.0
7.0
AK
G
J
Holding Current (V = 12 Vdc)
I
mA
D
H
(Initiating Current = 20 mA, Gate Open)
T = 25°C
−
−
−
0.19
0.33
0.07
3.0
6.0
2.0
J
T = −40°C
J
T = +110°C
J
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of Off−State Voltage
dv/dt
−
8.0
−
V/ms
(V = Rated V
, Exponential Waveform, R = 1000 Ohms,
DRM GK
AK
T = 110°C)
J
3. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
4. R is not included in measurement.
GK
Voltage Current Characteristic of SCR
+ Current
Anode +
V
Symbol
Parameter
TM
V
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
DRM
DRM
on state
I
I
H
I
at V
RRM
RRM
V
RRM
I
RRM
V
TM
+ Voltage
I
Holding Current
H
I
at V
DRM
Reverse Blocking Region
(off state)
DRM
Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode −
http://onsemi.com
3
C106 Series
110
100
10
JUNCTION TEMPERATURE ≈ 110°C
90
80
70
8
DC
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD
50 TO 400Hz.
6
4
60
50
DC
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD.
50 to 400 Hz
40
30
2
0
20
10
0
.4
.8
1.2 1.6
2.0
2.4 2.6
3.2
3.6
4.0
0
.4
.8
1.2 1.6
2.0
2.4 2.8
3.2
3.6
4.0
I
AVERAGE ON-STATE CURRENT (AMPERES)
I
AVERAGE ON-STATE CURRENT (AMPERES)
T(AV)
T(AV)
Figure 1. Average Current Derating
Figure 2. Maximum On−State Power Dissipation
100
1000
10
100
1
−40 −25 −10
10
−40 −25 −10
5
20
35
50
65
80
95
110
5
20
35
50
65
80
95 110
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. Typical Gate Trigger Current versus
Junction Temperature
Figure 4. Typical Holding Current versus
Junction Temperature
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1000
100
0.3
0.2
10
−40 −25 −10
−45 −25 −10
5
20
35
50
65
80
95
110
5
20
35
50
65
80
95 110
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Typical Gate Trigger Voltage versus
Junction Temperature
Figure 6. Typical Latching Current versus
Junction Temperature
http://onsemi.com
4
C106 Series
PACKAGE INTERCHANGEABILITY
The dimensional diagrams below compare the critical dimensions of the ON Semiconductor C-106 package with
competitive devices. It has been demonstrated that the smaller dimensions of the ON Semiconductor package make it
compatible in most lead-mount and chassis-mount applications. The user is advised to compare all critical dimensions for
mounting compatibility.
.400
____
.360
.295
____
.305
.115
____
.130
.095
____
.105
.127
____
.123
.135
____
.115
DIA
.026
____
.019
.145
____
.155
.148
____
.158
.520
____
.480
_
5
.425
____
.435
TYP
1
2 3
.385
____
.365
.315
____
.285
.050
____
.095
.575
____
.655
.420
____
.400
.105
____
.095
.105
____
.095
.015
____
.025
.040
.190
____
.170
.094 BSC
.054
____
.046
.045
____
.055
.025
____
.035
.020
____
.026
ON Semiconductor C-106 Package
Competitive C-106 Package
http://onsemi.com
5
C106 Series
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
−B−
F
C
U
Q
M
−A−
INCHES
DIM MIN MAX
MILLIMETERS
1
2 3
MIN
10.80
7.50
2.42
0.51
2.93
MAX
11.04
7.74
2.66
0.66
3.30
A
B
C
D
F
0.425
0.295
0.095
0.020
0.115
0.435
0.305
0.105
0.026
0.130
H
K
G
H
J
0.094 BSC
2.39 BSC
0.050
0.015
0.575
5
0.095
0.025
0.655
1.27
0.39
14.61
5
2.41
0.63
16.63
J
V
G
K
M
Q
R
S
U
V
TYP
TYP
_
_
R
0.148
0.045
0.025
0.145
0.040
0.158
0.065
0.035
0.155
−−−
3.76
1.15
0.64
3.69
1.02
4.01
1.65
0.88
3.93
−−−
M
M
M
B
0.25 (0.010)
A
S
D 2 PL
M
M
M
B
0.25 (0.010)
A
STYLE 2:
PIN 1. CATHODE
2. ANODE
3. GATE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
C106/D
相关型号：
C106D-2
Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, PLASTIC PACKAGE-3
NEC
C106D-AA
Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-202, PLASTIC PACKAGE-2
NEC
C106D-BY
Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-202, PLASTIC PACKAGE-3
NEC
©2020 ICPDF网 联系我们和版权申明