BZX85C8V2RL2 [ONSEMI]
1 Watt DO-41 Hermetically Sealed Glass Zener Voltage Regulators; 1瓦DO- 41密封式玻璃齐纳稳压器型号: | BZX85C8V2RL2 |
厂家: | ONSEMI |
描述: | 1 Watt DO-41 Hermetically Sealed Glass Zener Voltage Regulators |
文件: | 总8页 (文件大小:61K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BZX85C3V3RL Series
1 Watt DO-41 Hermetically
Sealed Glass Zener Voltage
Regulators
This is a complete series of 1 Watt Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon–oxide passivated junctions. All this in an axial–lead
hermetically sealed glass package that offers protection in all common
environmental conditions.
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Cathode
Anode
Specification Features:
• Zener Voltage Range – 3.3 V to 85 V
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• DO–41 (DO–204AL) Package
• Double Slug Type Construction
• Metallurgical Bonded Construction
• Oxide Passivated Die
AXIAL LEAD
CASE 59
GLASS
Mechanical Characteristics:
CASE: Double slug type, hermetically sealed glass
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MARKING DIAGRAM
L
BZX
85C
xxx
YWW
L
= Assembly Location
BZX85Cxxx= Device Code
= (See Table Next Page)
= Year
= Work Week
MAXIMUM RATINGS
Y
WW
Rating
Symbol
Value
Unit
Max. Steady State Power Dissipation
P
D
1
W
@ T ≤ 50°C, Lead Length = 3/8″
L
Derate above 50°C
6.67
mW/°C
°C
ORDERING INFORMATION
Operating and Storage
Temperature Range
T , T
–65 to
+200
J
stg
Device
BZX85CxxxRL
Package
Shipping
Axial Lead
6000/Tape & Reel
6000/Tape & Reel
BZX85CxxxRL2 Axial Lead
* The “2” suffix refers to 26 mm tape spacing.
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
February, 2002 – Rev. 1
BZX85C3V3RL/D
BZX85C3V3RL Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless
A
I
otherwise noted, V = 1.2 V Max., I = 200 mA for all types)
F
F
I
F
Symbol
Parameter
V
Z
Reverse Zener Voltage @ I
ZT
I
ZT
Reverse Current
Z
I
Maximum Zener Impedance @ I
Reverse Current
ZT
ZT
V
Z
V
R
V
I
ZT
ZK
V
F
R
I
Z
ZK
Maximum Zener Impedance @ I
ZK
I
Reverse Leakage Current @ V
Breakdown Voltage
R
R
V
R
I
F
Forward Current
V
Forward Voltage @ I
F
F
Zener Voltage Regulator
I
R
Surge Current @ T = 25°C
A
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2
BZX85C3V3RL Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 1.2 V Max., I = 200 mA for all types)
A
F
F
Zener Voltage (Notes 2 and 3)
Zener Impedance (Note 4)
Leakage Current
I
R
V (Volts)
Z
@ I
Z
ZT
@ I
Z
ZK
@ I
I @ V
R
(Note 5)
ZT
ZT
ZK
R
Device
Device
Min
Nom
Max
mA
W
W
mA
µA Max
Volts
mA
(Note 1)
Marking
BZX85C3V3RL BZX85C3V3
BZX85C3V6RL BZX85C3V6
BZX85C3V9RL BZX85C3V9
BZX85C4V3RL BZX85C4V3
BZX85C4V7RL BZX85C4V7
3.1
3.4
3.7
4.0
4.4
3.3
3.6
3.9
4.3
4.7
3.5
3.8
4.1
4.6
5.0
80
60
60
50
45
20
15
15
13
13
400
500
500
500
600
1
1
1
1
1
1
1
1
1
1.5
60
30
5
3
3
1380
1260
1190
1070
970
BZX85C5V1RL BZX85C5V1
BZX85C5V6RL BZX85C5V6
BZX85C6V2RL BZX85C6V2
BZX85C6V8RL BZX85C6V8
BZX85C7V5RL BZX85C7V5
4.8
5.2
5.8
6.4
7.0
5.1
5.6
6.2
6.8
7.45
5.4
6.0
6.6
7.2
7.9
45
45
35
35
35
10
7
4
3.5
3
500
400
300
300
200
1
1
1
1
0.5
2
2
3
4
4.5
1
1
1
1
1
890
810
730
660
605
BZX85C8V2RL BZX85C8V2
BZX85C9V1RL BZX85C9V1
7.7
8.5
9.4
11.4
12.4
8.2
9.05
10
12.05
13.25
8.7
9.6
10.6
12.7
14.1
25
25
25
20
20
5
5
7
9
10
200
200
200
350
400
0.5
0.5
0.5
0.5
0.5
5
1
550
500
454
380
344
6.5
7
8.4
9.1
1
BZX85C10RL
BZX85C12RL
BZX85C13RL
BZX85C10
BZX85C12
BZX85C13
0.5
0.5
0.5
BZX85C15RL
BZX85C16RL
BZX85C18RL
BZX85C22RL
BZX85C24RL
BZX85C15
BZX85C16
BZX85C18
BZX85C22
BZX85C24
13.8
15.3
16.8
20.8
22.8
14.7
16.2
17.95
22.05
24.2
15.6
17.1
19.1
23.3
25.6
15
15
15
10
10
15
15
20
25
25
500
500
500
600
600
0.5
0.5
0.5
0.5
0.5
10.5
11
12.5
15.5
17
0.5
0.5
0.5
0.5
0.5
304
285
250
205
190
BZX85C27RL
BZX85C30RL
BZX85C33RL
BZX85C36RL
BZX85C43RL
BZX85C27
BZX85C30
BZX85C33
BZX85C36
BZX85C43
25.1
28
31
34
40
27
30
33
36
43
28.9
32
35
38
46
8
8
8
8
6
30
30
35
40
50
750
0.25
0.25
0.25
0.25
0.25
19
21
23
25
30
0.5
0.5
0.5
0.5
0.5
170
150
135
125
110
1000
1000
1000
1000
BZX85C47RL
BZX85C62RL
BZX85C75RL
BZX85C82RL
BZX85C47
BZX85C62
BZX85C75
BZX85C82
44
58
70
77
47
62
75
82
50
66
80
87
4
4
4
90
1500
2000
2000
3000
0.25
0.25
0.25
0.25
33
43
51
56
0.5
0.5
0.5
0.5
95
70
60
55
125
150
200
2.7
1. TOLERANCE AND TYPE NUMBER DESIGNATION
The type numbers listed have zener voltage min/max limits as shown and have a standard tolerance on the nominal zener voltage of ±5%.
2. AVAILABILITY OF SPECIAL DIODES
For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage
tolerances, contact your nearest ON Semiconductor representative.
3. ZENER VOLTAGE (V ) MEASUREMENT
Z
V measured after the test current has been applied to 40 ±10 msec, while maintaining the lead temperature (T ) at 30°C ±1°C, 3/8″ from
Z
L
the diode body.
4. ZENER IMPEDANCE (Z ) DERIVATION
Z
The zener impedance is derived from 1 kHz cycle AC voltage, which results when an AC current having an rms value equal to 10% of the
DC zener current (I or I ) is superimposed on I or I
.
ZK
ZT
ZK
ZT
5. SURGE CURRENT (I ) NON–REPETITIVE
R
The rating listed in the electrical characteristics table is maximum peak, non–repetitive, reverse surge current of 1/2 square wave or eqivalent
sine wave pulse of 1/120 second duration superimposed on the test current, I . However, actual device capability is as described in Figure
ZT
5 of the General Data – DO–41 Glass.
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3
BZX85C3V3RL Series
1.25
1
L = LEAD LENGTH
TO HEAT SINK
L = 1″
L = 1/8″
L = 3/8″
0.75
0.5
0.25
0
20 40
60
80 100 120 140 160 180
200
T , LEAD TEMPERATURE (°C)
L
Figure 1. Power Temperature Derating Curve
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4
BZX85C3V3RL Series
a. Range for Units to 12 Volts
b. Range for Units to 12 to 100 Volts
100
70
+12
+10
+8
50
30
20
+6
+4
+2
0
RANGE
V Ă@ĂI
Z ZT
10
7
5
V Ă@ĂI
Z
ZT
RANGE
3
2
-2
-4
1
2
3
4
5
6
7
8
9
10
11 12
10
20
30
50
70 100
V , ZENER VOLTAGE (VOLTS)
Z
V , ZENER VOLTAGE (VOLTS)
Z
Figure 2. Temperature Coefficients
(–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.)
+6
175
150
125
100
75
V Ă@ĂI
Z
Z
+4
+2
T Ă=Ă25°C
A
20ĂmA
0
0.01ĂmA
50
1ĂmA
-2
-4
NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: EFFECT TEMPERATURE COEFFICIENTS
25
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8 0.9
1
3
4
5
6
7
8
L, LEAD LENGTH TO HEAT SINK (INCHES)
V , ZENER VOLTAGE (VOLTS)
Z
Figure 3. Typical Thermal Resistance
versus Lead Length
Figure 4. Effect of Zener Current
100
70
RECTANGULAR
WAVEFORM
T Ă=Ă25°C PRIOR TO
J
INITIAL PULSE
50
11ĂV-100ĂV NONREPETITIVE
3.3ĂV-10ĂV NONREPETITIVE
30
20
5% DUTY CYCLE
10
7
10% DUTY CYCLE
5
20% DUTY CYCLE
3
2
1
0.01 0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500 1000
PW, PULSE WIDTH (ms)
This graph represents 90 percentile data points.
For worst case design characteristics, multiply surge power by 2/3.
Figure 5. Maximum Surge Power
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5
BZX85C3V3RL Series
1000
500
1000
700
500
T = 25°C
Z
f = 60 Hz
T = 25°C
Z
f = 60 Hz
J
i (rms) = 0.1 I (dc)
J
i (rms) = 0.1 I (dc)
V = 2.7 V
Z
Z
Z
I = 1 mA
Z
200
200
100
70
50
47 V
27 V
100
50
5 mA
20 mA
20
10
20
10
7
5
6.2 V
5
2
1
2
1
0.1
0.2
0.5
1
2
5
10
20
50 100
1
2
3
5
7
10
20 30
50 70 100
I , ZENER CURRENT (mA)
Z
V , ZENER VOLTAGE (V)
Z
Figure 6. Effect of Zener Current
on Zener Impedance
Figure 7. Effect of Zener Voltage
on Zener Impedance
10000
7000
5000
400
300
200
100
50
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
2000
1000
700
500
0 V BIAS
1 V BIAS
200
20
100
70
50
10
8
50% OF BREAKDOWN BIAS
20
4
10
7
5
1
2
5
10
20
50
100
V , NOMINAL V (VOLTS)
Z Z
Figure 9. Typical Capacitance versus VZ
2
1
0.7
0.5
1000
MINIMUM
MAXIMUM
500
200
100
50
+125°C
0.2
0.1
0.07
0.05
0.02
20
10
5
75°C
0.01
0.007
0.005
+25°C
25°C
0°C
150°C
0.002
0.001
2
1
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
3
4
5
6
7
8
9
10 11 12 13 14 15
V , NOMINAL ZENER VOLTAGE (VOLTS)
Z
V , FORWARD VOLTAGE (VOLTS)
F
Figure 8. Typical Leakage Current
Figure 10. Typical Forward Characteristics
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6
BZX85C3V3RL Series
APPLICATION NOTE
TJ = TL + ∆TJL
.
Since the actual voltage available from a given zener
∆TJL = θJLPD.
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
θ
may be determined from Figure 3 for dc power
conditions. For worst-case design, using expected limits of
I , limits of P and the extremes of T (∆T ) may be
JL
Z
D
J
J
Lead Temperature, T , should be determined from:
L
estimated. Changes in voltage, V , can then be found from:
Z
TL = θLAPD + TA.
∆V = θVZ ∆TJ.
θ
is the lead-to-ambient thermal resistance (°C/W) and P
D
LA
θ
, the zener voltage temperature coefficient, is found
VZ
is the power dissipation. The value for θ will vary and
depends on the device mounting method. θ is generally 30
to 40°C/W for the various clips and tie points in common use
and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
LA
from Figure 2.
LA
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Surge limitations are given in Figure 5. They are lower
than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device
degradation should the limits of Figure 5 be exceeded.
Using the measured value of T , the junction temperature
L
may be determined by:
∆T is the increase in junction temperature above the lead
JL
temperature and may be found as follows:
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7
BZX85C3V3RL Series
OUTLINE DIMENSIONS
Zener Voltage Regulators – Axial Leaded
1 Watt DO–41 Glass
GLASS DO–41
CASE 59–10
ISSUE R
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
B
2. CONTROLLING DIMENSION: INCH.
3. 59-04 OBSOLETE, NEW STANDARD 59-09.
4. 59-03 OBSOLETE, NEW STANDARD 59-10.
5. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY
6. POLARITY DENOTED BY CATHODE BAND.
7. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
K
D
F
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.10
2.00
0.71
---
MAX
5.20
2.70
0.86
1.27
---
A
B
D
F
0.161
0.079
0.028
---
0.205
0.106
0.034
0.050
---
A
F
K
1.000
25.40
K
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
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intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
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PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
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4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
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Email: r14525@onsemi.com
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For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
BZX85C3V3RL/D
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