BZX84C39LT3G [ONSEMI]
250 mW 39 V ±5% Zener Diode Voltage Regulator;型号: | BZX84C39LT3G |
厂家: | ONSEMI |
描述: | 250 mW 39 V ±5% Zener Diode Voltage Regulator 测试 光电二极管 齐纳二极管 |
文件: | 总8页 (文件大小:84K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BZX84B4V7LT1,
BZX84C2V4LT1 Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
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3
1
Cathode
Anode
Features
• Pb−Free Packages are Available
• 225 mW Rating on FR−4 or FR−5 Board
• Zener Breakdown Voltage Range − 2.4 V to 75 V
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (>16 KV) per Human Body Model
• Tight Tolerance Series Available (See Page 4)
3
SOT−23
CASE 318
STYLE 8
1
2
MARKING DIAGRAM
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
xxxM
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
xxx = Specific Device Code
M
=Month Code
ORDERING INFORMATION
MAXIMUM RATINGS
†
Rating
Symbol
Max
Unit
Device*
Package
Shipping
Total Power Dissipation on FR−5 Board,
P
BZX84CxxxLT1
SOT−23
3000/Tape & Reel
3000/Tape & Reel
D
(Note 1) @ T = 25°C
225
1.8
556
mW
mW/°C
°C/W
A
BZX84CxxxLT1G SOT−23
(Pb−Free)
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
BZX84CxxxLT3
BZX84BxxxLT1
SOT−23 10,000/Tape & Reel
Total Power Dissipation on Alumina
P
D
SOT−23
3000/Tape & Reel
3000/Tape & Reel
Substrate, (Note 2) @ T = 25°C
300
2.4
417
mW
mW/°C
°C/W
A
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
BZX84BxxxLT1G SOT−23
(Pb−Free)
R
q
JA
Junction and Storage
Temperature Range
T , T
−65 to
+150
°C
BZX84BxxxLT3
SOT−23 10,000/Tape & Reel
J
stg
*The “T1” suffix refers to an 8 mm, 7 inch reel.
The “T3” suffix refers to an 8 mm, 13 inch reel.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. FR−5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
December, 2004 − Rev. 8
BZX84C2V4LT1/D
BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C
I
A
I
F
unless otherwise noted, V = 0.95 V Max. @ I = 10 mA)
F
F
Symbol
Parameter
V
Reverse Zener Voltage @ I
Reverse Current
Z
ZT
I
ZT
V
Z
V
R
V
I
Z
ZT
Maximum Zener Impedance @ I
V
F
R
ZT
ZT
I
I
Reverse Leakage Current @ V
Reverse Voltage
R
R
V
R
I
F
Forward Current
V
F
Forward Voltage @ I
F
QV
Maximum Temperature Coefficient of V
Z
Z
Zener Voltage Regulator
C
Max. Capacitance @ V = 0 and f = 1 MHz
R
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2
BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)
A
F
F
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
V
@ I
(Volts)
V
(V)
= 1 mA
V
(V)
= 20 mA
Max Reverse
Leakage
Current
q
VZ
Z1
Z2
Z3
= 5 mA
@ I
@ I
(mV/k)
@ I = 5 mA
ZT1
ZT1
ZT2
(Note 3)
ZT3
(Note 3)
Z
(W)
@ I
5 mA
Z
(W)
@ I
1 mA
Z
ZT3
(W)
@ I =
ZT3
(Note 3)
ZT1
ZT2
C (pF)
I
V
R
Volts
Device
=
=
@ V = 0
R
R
ZT1
ZT2
@
Min
Nom
2.4
2.7
3
Max
2.6
Min
1.7
Max
2.1
2.4
2.7
2.9
3.3
3.5
4
Min
Max
3.2
mA
Min
Max
0
Device
Marking
20 mA
f = 1 MHz
BZX84C2V4LT1, G*
BZX84C2V7LT1, G*
BZX84C3V0LT1
BZX84C3V3LT1, G*
BZX84C3V6LT1, G*
BZX84C3V9LT1, G*
BZX84C4V3LT1, G*
BZX84C4V7LT1
BZX84C5V1LT1
BZX84C5V6LT1
BZX84C6V2LT1
BZX84C6V8LT1
BZX84C7V5LT1
BZX84C8V2LT1
BZX84C9V1LT1
BZX84C10LT1, G*
BZX84C11LT1, G*
BZX84C12LT1, G*
BZX84C13LT1, G*
BZX84C15LT1
Z11
Z12
Z13
Z14
Z15
Z16
W9
Z1
2.2
2.5
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
600
600
600
600
600
600
600
500
480
400
150
80
2.6
3
50
50
1
1
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
450
2.9
1.9
3.6
50
50
40
40
30
30
15
15
10
6
20
10
5
0
450
450
450
450
450
450
260
225
200
185
155
140
135
130
130
130
130
120
110
105
100
85
2.8
3.2
2.1
3.3
3.6
3.9
4.1
4.4
4.5
5
3.9
1
0
3.1
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
3.5
2.3
4.2
1
0
3.4
3.8
2.7
4.5
5
1
0
3.7
4.1
2.9
4.7
3
1
−2.5
0
4
4.6
3.3
5.1
3
1
4.4
5
3.7
4.7
5.3
6
5.4
3
2
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
Z2
4.8
5.4
4.2
5.9
2
2
Z3
5.2
6
4.8
5.2
5.8
6.4
7
6.3
1
2
Z4
5.8
6.6
5.6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14
6.8
3
4
Z5
6.4
7.2
6.3
7.4
6
2
4
1.2
Z6
7
7.9
6.9
80
8
6
1
5
2.5
Z7
7.7
8.7
7.6
80
7.7
8.5
9.4
10.4
11.4
12.5
13.9
15.4
16.9
18.9
20.9
22.9
8.8
6
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
5
3.2
Z8
8.5
9.6
8.4
100
150
150
150
170
200
200
225
225
250
250
9.7
8
6
3.8
Z9
9.4
10.6
11.6
12.7
14.1
15.8
17.1
19.1
21.2
23.3
25.6
9.3
10.7
11.8
12.9
14.2
15.7
17.2
19.2
21.4
23.4
25.7
10
10
10
15
20
20
20
20
25
25
7
4.5
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
10.4
11.4
12.4
14.3
15.3
16.8
18.8
20.8
22.8
11
10.2
11.2
12.3
13.7
15.2
16.7
18.7
20.7
22.7
8
5.4
12
8
6.0
13
8
7.0
15
15.5
17
10.5
11.2
12.6
14
15.4
16.8
9.2
BZX84C16LT1, G*
BZX84C18LT1
16
10.4
12.4
14.4
16.4
18.4
18
19
BZX84C20LT1, G*
BZX84C22LT1, G*
BZX84C24LT1
20
21.1
23.2
25.5
22
85
24
80
V
Below
= 0.1 m
A
Max Reverse
Leakage
Current
q
VZ
(mV/k) Below
@ I = 2 mA
ZT1
Z2
V
Below
= 2 mA
@ I
ZT2
V Below
Z3
Z1
Z
Z
Z
@ I
ZT1
@ I
ZT3
= 10 mA
ZT1
ZT2
ZT3
Below
Below
Below
C (pF)
I
V
R
Device
Marking
@ I
2 mA
=
@ I
0.5 mA
=
@ I
10 mA
=
@ V = 0
R
f = 1 MHz
R
ZT1
ZT4
ZT3
@
Min
Nom
Max
28.9
32
Min
Max
28.9
32
Min
Max
29.3
32.4
35.4
38.4
41.5
46.5
50.5
54.6
60.8
67
mA
(V)
18.9
21
Min
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
Device
BZX84C27LT1, G*
Y10
Y11
Y12
Y13
Y14
Y15
Y16
Y17
Y18
Y19
Y20
Y21
25.1
28
31
34
37
40
44
48
52
58
64
70
27
30
33
36
39
43
47
51
56
62
68
75
80
80
25
300
300
325
350
350
375
375
400
425
450
475
500
25.2
28.1
31.1
34.1
37.1
40.1
44.1
48.1
52.1
58.2
64.2
70.3
45
50
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
70
BZX84C30LT1
27.8
30.8
33.8
36.7
39.7
43.7
47.6
51.5
57.4
63.4
69.4
70
70
70
45
40
40
40
40
35
35
35
BZX84C33LT1, G*
BZX84C36LT1
35
80
35
55
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
38
90
38
60
BZX84C39LT1, G*
BZX84C43LT1, G*
BZX84C47LT1, G*
BZX84C51LT1
41
130
150
170
180
200
215
240
255
41
70
46
46
80
50
50
90
54
54
100
110
120
130
140
BZX84C56LT1, G*
BZX84C62LT1
60
60
66
66
BZX84C68LT1, G*
BZX84C75LT1, G*
72
72
73.2
80.2
79
79
3. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C.
Z
* The “G” suffix indicates Pb−Free package available.
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3
BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)
A
F
F
Max Reverse
Leakage
Z
ZT
(W) @
q
Current
VZ
I
ZT
= 5 mA
V
(Volts) @ I
= 5 mA
(mV/k)
@ I = 5 mA
Z
ZT
C (pF)
I
V
R
(Note 4)
Max
80
(Note 4)
Nom
4.7
R
ZT
@ V =0,
Device
@
R
Min
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
15.7
17.6
Max
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
16.3
18.4
mA
Volts
Min
Max
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7
f = 1 MHz
260
Marking
Device
BZX84B4V7LT1
T10
T11
T12
T13
T14
T15
T16
T17
T19
T20
3
2
1
3
2
1
2
2
−3.5
−2.7
−2
BZX84B5V1LT1, G*
BZX84B5V6LT1
5.1
60
225
5.6
40
2
200
BZX84B6V2LT1, G*
BZX84B6V8LT1, G*
BZX84B7V5LT1, G*
BZX84B8V2LT1, G*
BZX84B9V1LT1, G*
BZX84B16LT1
6.2
10
4
0.4
185
6.8
15
4
1.2
155
7.5
15
5
2.5
140
8.2
15
0.7
0.5
5
3.2
135
9.1
15
6
3.8
130
16
40
0.05
0.05
11.2
12.6
10.4
12.4
14
105
BZX84B18LT1
18
45
16
100
4. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C.
Z
* The “G” suffix indicates Pb−Free package available.
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4
−
1
−
2
3
BZX84B4V7LT1, BZX84C2V4LT1 Series
TYPICAL CHARACTERISTICS
8
7
6
5
4
3
100
TYPICAL T VALUES
C
TYPICAL T VALUES
C
V @ I
Z
ZT
V @ I
Z
ZT
10
2
1
0
−1
2
3
4
5
6
7
8
9
10
11
12
10
100
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 1. Temperature Coefficients
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
(Temperature Range −55°C to +150°C)
1000
100
10
1
1000
100
10
T = 25°C
I = 0.1 I
Z(AC)
f = 1 kHz
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
J
Z(DC)
I = 1 mA
Z
5 mA
20 mA
75°C 25°C
0.6 0.7
0°C
150°C
0.5
1
0.4
1
10
V , NOMINAL ZENER VOLTAGE
100
0.8
0.9
1.0
1.1
1.2
V , FORWARD VOLTAGE (V)
F
Z
Figure 3. Effect of Zener Voltage on
Zener Impedance
Figure 4. Typical Forward Voltage
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5
BZX84B4V7LT1, BZX84C2V4LT1 Series
TYPICAL CHARACTERISTICS
1000
100
1000
T = 25°C
A
100
10
0 V BIAS
1 V BIAS
1
+150°C
BIAS AT
50% OF V NOM
0.1
0.01
Z
10
1
+ꢀ25°C
−ꢀ55°C
0.001
0.0001
0.00001
1
10
100
0
10
20
30
40
50
60
70
80
90
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 5. Typical Capacitance
Figure 6. Typical Leakage Current
100
10
100
10
T = 25°C
A
T = 25°C
A
1
1
0.1
0.01
0.1
0.01
10
30
50
70
90
0
2
4
6
8
10
12
V , ZENER VOLTAGE (V)
Z
V , ZENER VOLTAGE (V)
Z
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
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6
BZX84B4V7LT1, BZX84C2V4LT1 Series
PACKAGE DIMENSIONS
SOT−23
TO−236AB
CASE 318−09
ISSUE AK
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
3
S
C
B
1
2
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
V
G
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
G
H
J
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
H
J
D
K
K
L
S
V
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
BZX84B4V7LT1, BZX84C2V4LT1 Series
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
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