BUL45_06 [ONSEMI]
NPN Silicon Power Transistor; NPN硅功率晶体管
| 型号： | BUL45_06 |
| 厂家： | 
ONSEMI |
| 描述： | NPN Silicon Power Transistor |
| 文件： | 总8页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUL45
NPN Silicon Power
Transistor
High Voltage SWITCHMODEt Series
Designed for use in electronic ballast (light ballast) and in
Switchmode Power supplies up to 50 Watts.
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Features
POWER TRANSISTOR
5.0 AMPERES, 700 VOLTS,
35 AND 75 WATTS
• Improved Efficiency Due to:
♦ Low Base Drive Requirements (High and Flat DC Current Gain h )
FE
♦ Low Power Losses (On−State and Switching Operations)
♦ Fast Switching: t = 100 ns (typ) and t = 3.2 ms (typ)
fi
si
♦ @ I = 2.0 A, I = I = 0.4 A
C
B1
B2
• Full Characterization at 125°C
• Tight Parametric Distributions Consistent Lot−to−Lot
• Pb−Free Package is Available*
TO−220AB
CASE 221A−09
MAXIMUM RATINGS
Rating
Symbol
Value
400
Unit
Vdc
Vdc
1
STYLE 1
2
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
V
3
CEO
V
700
CES
EBO
Emitter−Base Voltage
V
9.0
Vdc
Adc
MARKING DIAGRAM
Collector Current − Continuous
− Peak (Note 1)
I
5.0
10
C
I
CM
Base Current
I
2.0
Adc
B
Total Device Dissipation @ T = 25_C
P
75
0.6
W
W/_C
C
D
Derate above 25°C
BUL45G
AY WW
Operating and Storage Temperature
THERMAL CHARACTERISTICS
T , T
−65 to 150
_C
J
stg
Characteristics
Symbol
Max
1.65
62.5
Unit
_C/W
_C/W
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
q
JC
JA
R
q
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
BUL45 = Device Code
A
= Assembly Location
Y
= Year
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
WW
G
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
BUL45
Package
Shipping
TO−220
50 Units / Rail
50 Units / Rail
BUL45G
TO−220
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
February, 2006 − Rev. 7
BUL45/D
BUL45
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)
V
400
−
−
−
−
Vdc
mAdc
mAdc
C
CEO(sus)
Collector Cutoff Current (V = Rated V
, I = 0)
I
CEO
100
CE
CEO
B
Collector Cutoff Current (V = Rated V
, V = 0)
I
−
−
−
−
10
100
CE
CES
EB
CES
(T = 125°C)
C
Emitter Cutoff Current (V = 9.0 Vdc, I = 0)
I
−
−
100
mAdc
EB
C
EBO
ON CHARACTERISTICS
Base−Emitter Saturation Voltage
V
Vdc
BE(sat)
(I = 1.0 Adc, I = 0.2 Adc)
−
−
0.84
0.89
1.2
1.25
C
B
(I = 2.0 Adc, I = 0.4 Adc)
C
B
Collector−Emitter Saturation Voltage (I = 1.0 Adc, I = 0.2 Adc)
V
V
−
−
0.175
0.150
0.25
−
Vdc
Vdc
−
C
B
CE(sat)
CE(sat)
(T = 125°C)
C
Collector−Emitter Saturation Voltage (I = 2.0 Adc, I = 0.4 Adc)
−
−
0.25
0.275
0.4
−
C
B
(T = 125°C)
C
DC Current Gain (I = 0.3 Adc, V = 5.0 Vdc)
h
FE
14
−
7.0
5.0
10
−
34
−
−
−
−
C
CE
(T = 125°C)
C
32
14
12
22
(I = 2.0 Adc, V = 1.0 Vdc)
C
CE
(T = 125°C)
C
(I = 10 mAdc, V = 5.0 Vdc)
C
CE
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (I = 0.5 Adc, V = 10 Vdc, f = 1.0 MHz)
f
−
−
−
12
50
—
75
MHz
pF
C
CE
T
Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz)
C
CB
E
ob
Input Capacitance (V = 8.0 Vdc)
C
920
1200
pF
EB
ib
−
−
1.75
4.4
−
−
1.0 ms
3.0 ms
1.0 ms
3.0 ms
(I = 1.0 Adc
(T = 125°C)
C
C
I
V
= 100 mAdc
= 300 V)
B1
CC
−
−
0.5
1.0
−
−
Dynamic Saturation Voltage:
(T = 125°C)
C
Determined 1.0 ms and 3.0 ms
V
CE
(Dyn sat)
Vdc
respectively after rising I
B1
−
−
1.85
6.0
−
−
reaches 90% of final I
(I = 2.0 Adc
B1
(T = 125°C)
C
C
B1
(see Figure 18)
I
= 400 mAdc
−
−
0.5
1.0
−
−
V
= 300 V)
CC
(T = 125°C)
C
SWITCHING CHARACTERISTICS: Resistive Load
Turn−On Time
(I = 2.0 Adc, I = I = 0.4 Adc
t
t
−
−
75
120
110
−
ns
C
B1
B2
on
Pulse Width = 20 ms,
(T = 125°C)
C
Turn−Off Time
Duty Cycle < 20% V = 300 V
−
−
2.8
3.5
3.5
−
ms
CC
off
(T = 125°C)
C
SWITCHING CHARACTERISTICS: Inductive Load (V = 15 Vdc, L = 200 mH, V
= 300 Vdc)
CC
C
clamp
Fall Time
(I = 2.0 Adc, I = 0.4 Adc
t
fi
70
−
−
200
170
−
ns
ms
ns
ns
ms
ns
ns
C
B1
I
= 0.4 Adc)
(T = 125°C)
B2
C
Storage Time
Crossover Time
Fall Time
t
2.6
−
−
4.2
3.8
−
si
(T = 125°C)
C
t
−
−
230
400
350
−
c
fi
(T = 125°C)
C
(I = 1.0 Adc, I = 100 mAdc
t
−
−
110
100
150
−
C
B2
B1
I
= 0.5 Adc)
(T = 125°C)
C
Storage Time
Crossover Time
Fall Time
t
−
−
1.1
1.5
1.7
−
si
(T = 125°C)
C
t
−
−
170
170
250
−
c
fi
(T = 125°C)
C
(I = 2.0 Adc, I = 250 mAdc
t
−
80
120
C
B1
I
= 2.0 Adc)
(T = 125°C)
C
B2
Storage Time
(T = 125°C)
t
−
−
0.6
0.9
ms
C
si
Crossover Time
(T = 125°C)
C
t
175
300
ns
c
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2
BUL45
TYPICAL STATIC CHARACTERISTICS
100
100
V
= 1 V
V
= 5 V
CE
CE
T = 25°C
J
T = 25°C
J
T = 125°C
J
T = 125°C
J
T = −ꢀ20°C
J
T = −ꢀ20°C
J
10
10
1
0.01
1
0.01
0.10
1.00
10.00
0.10
1.00
10.00
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain at @ 5 Volts
2.0
1.5
1.0
10
T = 25°C
J
1.0
1.5
A
1 A
2ꢀA 3 A 4 A 5 A
6 A
I /I = 10
C B
0.1
0.5
0
T = 25°C
T = 125°C
J
J
I /I = 5
C B
I = 0.5 A
C
0.01
0.01
0.01
0.10
1.00
10.00
0.10
1.00
10.00
I , BASE CURRENT (AMPS)
B
I , COLLECTOR CURRENT (AMPS)
C
Figure 3. Collector−Emitter Saturation Region
Figure 4. Collector−Emitter Saturation Voltage
1.1
10000
1000
T = 25°C
J
f = 1 MHz
1.0
0.9
0.8
0.7
C
ib
C
ob
100
10
1
T = 25°C
J
0.6
0.5
0.4
T = 125°C
J
I /I = 10
C B
I /I = 5
C B
0.01
0.10
1.00
10.00
1
10
100
1000
I , COLLECTOR CURRENT (AMPS)
C
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
Figure 5. Base−Emitter Saturation Region
Figure 6. Capacitance
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3
BUL45
TYPICAL SWITCHING CHARACTERISTICS
(I = I /2 for all switching)
B2
C
1200
1000
800
3000
2500
2000
1500
1000
I
= I /2
B(off) C
= 300 V
T = 25°C
T = 125°C
J
I
= I /2
C
J
B(off)
T = 25°C
T = 125°C
J
V
J
CC
V
= 300 V
CC
I /I = 5
C B
PW = 20 ms
PW = 20 ms
I /I = 10
C B
I /I = 10
C B
600
400
200
0
500
0
I /I = 5
C B
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 7. Resistive Switching, ton
Figure 8. Resistive Switching, toff
3500
3000
2500
2000
1500
1000
3500
3000
2500
2000
1500
1000
500
I
= I /2
C
B(off)
T = 25°C
T = 125°C
J
V = 300 V
Z
J
L = 200 mH
C
V = 300 V
V
I
= 15 V
= I /2
CC
Z
I /I = 5
C B
B(off)
C
V
= 15 V
CC
L = 200 mH
C
I = 1 A
C
T = 25°C
T = 125°C
J
J
500
0
I = 2 A
C
I /I = 10
C B
0
1
2
3
4
5
3
4
5
6
7
8
9
10 11 12 13 14 15
h , FORCED GAIN
FE
I , COLLECTOR CURRENT (AMPS)
C
Figure 9. Inductive Storage Time, tsi
Figure 10. Inductive Storage Time, tsi(hFE
)
300
250
200
150
100
200
150
100
50
t
c
t
c
I
= I /2
B(off) C
= 15 V
V
I
= 15 V
= I /2
CC
V
CC
t
fi
B(off)
C
50
0
t
fi
V = 300 V
Z
T = 25°C
T = 125°C
J
T = 25°C
L = 200 mH
C
V = 300 V
J
J
L = 200 mH
C
T = 125°C
J
Z
0
0
1
2
3
4
5
0
1
2
3
4
5
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 11. Inductive Switching, tc & tfi, IC/IB = 5
Figure 12. Inductive Switching, tc & tfi, IC/IB = 10
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4
BUL45
TYPICAL SWITCHING CHARACTERISTICS
(I = I /2 for all switching)
B2
C
150
140
130
120
110
100
90
300
250
200
150
V
= 15 V
V = 300 V
CC
I
= I /2
B(off) C
= 15 V
T = 25°C
T = 125°C
J
J
Z
V
CC
V = 300 V
I
= I /2
C
B(off)
Z
L = 200 mH
C
L = 200 mH
C
I = 1 A
C
I = 1 A
C
100
50
I = 2 A
C
T = 25°C
T = 125°C
J
80
J
I = 2 A
C
70
3
4
5
6
7
8
9
10 11 12 13 14 15
3
4
5
6
7
8
9
10 11 12 13 14 15
h
, FORCED GAIN
h , FORCED GAIN
FE
FE
Figure 13. Inductive Fall Time, tfi(hFE
)
Figure 14. Crossover Time
GUARANTEED SAFE OPERATING AREA INFORMATION
100
10
6
DC (BUL45)
5ꢁms
T ≤ 125°C
C
I /I ≥ 4
C B
5
1ꢁms
50ꢁms
10ꢁms
1ꢁms
L = 500 mH
C
4
3
2
EXTENDED
SOA
1.0
0.1
−5 V
1
0
V
= 0 V
−1.5 V
BE(off)
0.01
10
100
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1000
300
400
V , COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
500
600
700
800
V
CE
Figure 15. Forward Bias Safe Operating Area
Figure 16. Reverse Bias Switching Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC − VCE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate. The data of Figure 15 is based on TC = 25°C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated when
TC ≥ 25°C. Second breakdown limitations do not derate the same
as thermal limitations. Allowable current at the voltages shown in
Figure 15 may be found at any case temperature by using the
appropriate curve on Figure 17. TJ(pk) may be calculated from the
data in Figures 20. At any case temperatures, thermal limitations
will reduce the power that can be handled to values less than the
limitations imposed by second breakdown. For inductive loads,
high voltage and current must be sustained simultaneously during
turn−off with the base−to−emitter junction reverse−biased. The
safe level is specified as a reverse−biased safe operating area
(Figure 16). This rating is verified under clamped conditions so
that the device is never subjected to an avalanche mode.
1.0
SECOND BREAKDOWN
DERATING
0.8
0.6
0.4
THERMAL DERATING
0.2
0
20
40
60
80
100
120
140
160
T , CASE TEMPERATURE (°C)
C
Figure 17. Forward Bias Power Derating
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5
BUL45
10
5
4
V
CE
90% I
I
C
C
9
8
7
6
5
t
fi
3
dyn 1 ms
t
si
2
dyn 3 ms
1
t
c
10% I
C
V
10% V
CLAMP
0
CLAMP
−1
−2
−3
−4
−5
4
3
2
1
0
90% I
B
I
B
90% I 1
B
1 ms
3 ms
I
B
0
1
2
3
4
5
6
7
8
TIME
TIME
Figure 18. Dynamic Saturation Voltage Measurements
Figure 19. Inductive Switching Measurements
+15 V
I PEAK
C
100 mF
1 mF
MTP8P10
MUR105
MJE210
100 W
3 W
150 W
3 W
V
PEAK
CE
V
CE
MTP8P10
MPF930
R
R
B1
I 1
B
I
MPF930
+10 V
out
I
B
A
I 2
B
50 W
B2
V(BR)CEO(sus)
L = 10 mH
INDUCTIVE SWITCHING
L = 200 mH
RB2 = 0
RBSOA
COMMON
MTP12N10
150 W
3 W
L = 500 mH
RB2 = 0
RB2 = ∞
500 mF
V
= 20 VOLTS
I (pk) = 100 mA
V
= 15 VOLTS
V
= 15 VOLTS
CC
CC
CC
RB1 SELECTED FOR
DESIRED I 1
RB1 SELECTED
FOR DESIRED I 1
C
1 mF
B
B
−V
off
Table 1. Inductive Load Switching Drive Circuit
TYPICAL THERMAL RESPONSE
1.00
D = 0.5
0.2
0.1
R
R
(t) = r(t) R
q
JC
q
q
JC
0.10
P
(pk)
= 2.5°C/W MAX
JC
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
0.05
0.02
t
t
1
2
1
T
− T = P
C
R
(t)
q
JC
SINGLE PULSE
J(pk)
(pk)
DUTY CYCLE, D = t /t
1 2
0.01
0.01
0.10
1.00
10.00
100.00
1000.00
t, TIME (ms)
Figure 20. Typical Thermal Response (ZqJC(t)) for BUL45
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6
BUL45
The BUL45 Bipolar Power Transistors were specially
designed for use in electronic lamp ballasts. A circuit
designed by ON Semiconductor applications was built to
demonstrate how well these devices operate. The circuit and
detailed component list are provided below.
C5 400 V
Q1
D5
I
C
0.1 mF
MUR150
D3
22 mF 385 V
1000 V
47
W
C1
15 mF
470
1 W
T1A
D10
D9
D7
TUBE
kW
C4
T1B
Q2
1N4007
D1
D8
D6
47 W
I
C
FUSE
C3 1000 V
400 V
MUR150
D4
C2
C6
10 nF
0.1 mF
L
CTN
0.1 mF 100 V
5.5 mH
D2
1N5761
AC LINE
220 V
1 W
Components Lists
Q1 = Q2 = BUL45 Transistor
D1 = 1N4007 Rectifier
D2 = 1N5761 Rectifier
D3 = D4 = MUR150
D5 = D6 = MUR105
D7 = D8 = D9 = D10 = 1N400
ꢀAll resistors are 1/4 Watt, 5%
R1 = 470 kW
R2 = R3 = 47 W
R4 = R5 = 1 W (these resistors are optional, and
might be replaced by a short circuit)
C1 = 22 mF/385 V
CTN = 47 W @ 25°C
C2 = 0.1 mF
L = RM10 core, A1 = 400, B51 (LCC) 75 turns,
wire ∅ = 0.6 mm
C3 = 10 nF/1000 V
C4 = 15 nF/1000 V
T1 = FT10 toroid, T4A (LCC)
C5 = C6 = 0.1 mF/400 V
Primary: 4 turns
Secondaries: T1A: 4 turns
Secondaries: T1B: 4 turns
NOTES:
1. Since this design does not include the line input filter, it cannot be used “as−is” in a practical industrial circuit.
2. The windings are given for a 55 Watt load. For proper operation they must be re−calculated with any other loads.
Figure 21. Application Example
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7
BUL45
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
1
2
3
U
H
G
H
J
K
L
L
R
J
N
Q
R
S
T
V
G
D
U
V
Z
N
−−− 0.080
2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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