BUL45D2AU [ONSEMI]
5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN;
| 型号： | BUL45D2AU |
| 厂家： | 
ONSEMI |
| 描述： | 5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN 晶体 晶体管 功率双极晶体管 开关 局域网 |
| 文件： | 总12页 (文件大小：446K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document
by BUL45D2/D
SEMICONDUCTOR TECHNICAL DATA
POWER TRANSISTORS
5 AMPERES
700 VOLTS
75 WATTS
The BUL45D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time)
make it ideally suitable for light ballast applications. Therefore, there is no need to
guarantee an h
window.
FE
Main features:
•
•
•
Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ I = 100 mA
Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
C
•
•
•
Integrated Collector–Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic V
CE(sat)
“6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
It’s characteristics make it also suitable for PFC application.
CASE 221A–06
TO–220AB
MAXIMUM RATINGS
Rating
Symbol
Value
400
700
700
12
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Collector–Emitter Sustaining Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
V
V
CEO
CBO
V
CES
EBO
V
Collector Current — Continuous
— Peak (1)
I
C
5
10
I
CM
Base Current — Continuous
Base Current — Peak (1)
I
2
4
Adc
B
I
BM
*Total Device Dissipation @ T = 25 C
C
*Derate above 25°C
P
D
75
0.6
Watt
W/ C
Operating and Storage Temperature
T , T
–65 to 150
C
J
stg
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
C/W
R
θJC
R
θJA
1.65
62.5
Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
T
L
260
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(I = 100 mA, L = 25 mH)
C
V
400
700
12
450
910
14.1
Vdc
Vdc
CEO(sus)
Collector–Base Breakdown Voltage
V
V
CBO
EBO
CEO
(I
CBO
= 1 mA)
Emitter–Base Breakdown Voltage
(I = 1 mA)
Vdc
EBO
Collector Cutoff Current
(V = Rated V , I = 0)
I
100
µAdc
µAdc
CE CEO
B
Collector Cutoff Current (V
= Rated V
, V
CES EB
= 0)
@ T = 25°C
I
100
500
100
CE
C
CES
@ T = 125°C
C
Collector Cutoff Current (V
Emitter–Cutoff Current
= 500 V, V
= 0)
@ T = 125°C
C
CE
EB
I
100
µAdc
EBO
(V
EB
= 10 Vdc, I = 0)
C
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(I = 0.8 Adc, I = 80 mAdc)
V
Vdc
BE(sat)
@ T = 25°C
0.8
0.7
1
0.9
C
B
C
@ T = 125°C
C
(I = 2 Adc, I = 0.4 Adc)
@ T = 25°C
0.89
0.79
1
0.9
C
B
C
@ T = 125°C
C
Collector–Emitter Saturation Voltage
(I = 0.8 Adc, I = 80 mAdc)
V
Vdc
CE(sat)
@ T = 25°C
0.28
0.32
0.4
0.5
C
B
C
@ T = 125°C
C
(I = 2 Adc, I = 0.4 Adc)
@ T = 25°C
0.32
0.38
0.5
0.6
C
B
C
@ T = 125°C
C
(I = 0.8 Adc, I = 40 mAdc)
@ T = 25°C
0.46
0.62
0.75
1
C
B
C
@ T = 125°C
C
DC Current Gain
(I = 0.8 Adc, V
C CE
h
FE
—
= 1 Vdc)
@ T = 25°C
22
20
34
29
C
@ T = 125°C
C
(I = 2 Adc, V
C CE
= 1 Vdc)
@ T = 25°C
10
7
14
9.5
C
@ T = 125°C
C
DIODE CHARACTERISTICS
Forward Diode Voltage
V
EC
V
(I
EC
(I
EC
(I
EC
= 1 Adc)
= 2 Adc)
= 0.4 Adc)
@ T = 25°C
1.04
0.7
1.5
1.6
1.2
C
@ T = 125°C
C
@ T = 25°C
1.2
C
@ T = 125°C
C
@ T = 25°C
0.85
0.62
C
@ T = 125°C
C
Forward Recovery Time (see Figure 27)
(I = 1 Adc, di/dt = 10 A/µs)
T
fr
330
ns
@ T = 25°C
F
C
(I = 2 Adc, di/dt = 10 A/µs)
@ T = 25°C
360
320
F
C
(I = 0.4 Adc, di/dt = 10 A/µs)
F
@ T = 25°C
C
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
f
13
50
MHz
pF
T
(I = 0.5 Adc, V
C CE
= 10 Vdc, f = 1 MHz)
Output Capacitance
(V = 10 Vdc, I = 0, f = 1 MHz)
C
75
ob
CB
Input Capacitance
(V = 8 Vdc)
E
C
340
500
pF
ib
EB
DYNAMIC SATURATION VOLTAGE
@ 1 µs
@ 3 µs
@ 1 µs
@ 3 µs
@ T = 25°C
V
3.7
9.4
V
V
V
V
C
CE(dsat)
I
= 1 A
= 100 mA
= 300 V
@ T = 125°C
C
C
I
V
Dynamic Saturation
Voltage:
Determined 1 µs and
3 µs respectively after
B1
CC
@ T = 25°C
0.35
2.7
C
@ T = 125°C
C
@ T = 25°C
3.9
12
C
rising I reaches
I
C
= 2 A
= 0.8 A
= 300 V
B1
@ T = 125°C
C
90% of final I
B1
I
B1
CC
@ T = 25°C
0.4
1.5
C
V
@ T = 125°C
C
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)
Turn–on Time
Turn–off Time
Turn–on Time
Turn–off Time
@ T = 25°C
t
90
105
150
1.3
150
2.4
ns
µs
ns
µs
C
on
I
= 2 Adc, I = 0.4 Adc
B1
@ T = 125°C
C
C
C
I
= 1 Adc
B2
CC
@ T = 25°C
t
1.15
1.5
C
off
V
= 300 Vdc
@ T = 125°C
C
@ T = 25°C
t
on
90
110
C
I
= 2 Adc, I = 0.4 Adc
@ T = 125°C
B1
= 0.4 Adc
= 300 Vdc
C
I
B2
@ T = 25°C
t
2.1
C
off
V
CC
@ T = 125°C
3.1
C
SWITCHING CHARACTERISTICS: Inductive Load (V
= 300 V, V
CC
= 15 V, L = 200 µH)
clamp
Fall Time
@ T = 25°C
t
90
93
150
0.9
ns
µs
ns
ns
µs
ns
C
f
@ T = 125°C
C
I
= 1 Adc
= 100 mAdc
= 500 mAdc
C
Storage Time
Crossover Time
Fall Time
@ T = 25°C
t
s
t
c
0.72
1.05
C
I
I
B1
B2
@ T = 125°C
C
@ T = 25°C
95
95
150
150
2.25
300
C
@ T = 125°C
C
@ T = 25°C
t
f
80
105
C
@ T = 125°C
C
I
= 2 Adc
= 0.4 Adc
= 0.4 Adc
C
B1
B2
Storage Time
Crossover Time
@ T = 25°C
t
t
1.95
C
s
I
I
@ T = 125°C
2.9
C
@ T = 25°C
225
450
C
c
@ T = 125°C
C
3
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
100
80
100
V
CE
= 1 V
V
= 5 V
CE
T
= 125°C
T
= 125°C
80
60
40
J
J
T
= 25°C
T
= 25°C
J
J
60
40
T
= –20°C
T
= –20°C
J
J
20
0
20
0
0.001
0.01
0.1
1
10
10
10
0.001
0.01
0.1
1
10
10
10
I
, COLLECTOR CURRENT (AMPS)
I , COLLECTOR CURRENT (AMPS)
C
C
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volt
4
3
2
10
T
= 25°C
J
I
/I = 5
C B
T
= 25°C
J
1
T
= 125°C
J
5 A
3 A
1
0
2 A
4 A
T
= –20°C
1 A
J
I
= 500 mA
0.01
C
0.1
0.001
0.001
0.1
, BASE CURRENT (AMPS)
1
0.01
0.1
1
I
I , COLLECTOR CURRENT (AMPS)
C
B
Figure 3. Collector Saturation Region
Figure 4. Collector–Emitter Saturation Voltage
10
10
I
/I = 10
I
/I = 20
C B
C B
1
1
T
= 125°C
J
T
= 25°C
J
T
= –20°C
T
= –20°C
J
J
T
= 125°C
J
T
= 25
°
C
J
0.1
0.001
0.1
0.001
0.01
0.1
1
0.01
0.1
1
I
, COLLECTOR CURRENT (AMPS)
I , COLLECTOR CURRENT (AMPS)
C
C
Figure 5. Collector–Emitter Saturation Voltage
Figure 6. Collector–Emitter Saturation Voltage
4
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
10
10
I
/I = 5
I
/I = 10
C B
C B
T
= 25°C
J
T
= –20°C
1
1
T
= –20°C
J
J
T
= 125°C
J
T
= 125°C
J
T
= 25°C
J
0.1
0.001
0.1
0.001
0.01
0.1
1
10
0.01
0.1
1
10
I
, COLLECTOR CURRENT (AMPS)
I , COLLECTOR CURRENT (AMPS)
C
C
Figure 7. Base–Emitter Saturation Region
Figure 8. Base–Emitter Saturation Region
10
10
I
/I = 20
C B
25°C
1
1
T = –20°C
J
125°C
T
= 125°C
J
T
= 25°C
J
0.1
0.001
0.1
0.01
0.01
0.1
1
10
0.1
1
10
I
, COLLECTOR CURRENT (AMPS)
REVERSE EMITTER–COLLECTOR CURRENT (AMPS)
C
Figure 9. Base–Emitter Saturation Region
Figure 10. Forward Diode Voltage
1000
100
1000
900
800
700
600
T
f
= 25°C
T
= 25°C
C
(pF)
J
J
ib
BVCER @ 10 mA
= 1 MHz
(test)
C
(pF)
ob
10
1
BVCER(sus) @ 200 mA
500
400
1
10
, REVERSE VOLTAGE (VOLTS)
100
10
100
1000
V
R
(Ω)
R
BE
Figure 11. Capacitance
Figure 12. BVCER = f(ICER)
5
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
1000
800
600
400
5
I
= I
= 300 V
T
T
= 125°C
= 25°C
Bon Boff
J
J
I
= I
= 300 V
Bon Boff
V
CC
PW = 20
V
I
/I = 10
CC
PW = 20
C B
4
3
2
µs
µs
I
/I = 10
C B
I
/I = 5
C B
I
/I = 5
C B
200
0
1
0
T
T
= 125°C
J
J
= 25°C
0.5
1
1.5
2
2.5
3
3.5
4
0.5
1
1.5
2
2.5
3
3.5
4
I
, COLLECTOR CURRENT (AMPS)
I
, COLLECTOR CURRENT (AMPS)
C
C
Figure 13. Resistive Switch Time, t
Figure 14. Resistive Switch Time, t
off
on
4
3
2
5
4
3
2
I
V
V
= I
= 15 V
= 300 V
= 200
I
V
V
L
= I
Bon Boff
CC
Bon Boff
I
/I = 5
C B
= 15 V
CC
= 300 V
= 200
Z
C
Z
L
µH
µH
C
1
0
1
0
T
T
= 125
°
C
T
T
= 125°C
= 25°C
J
J
J
J
= 25°C
0
1
2
3
4
0
1
2
3
4
I
, COLLECTOR CURRENT (AMPS)
I , COLLECTOR CURRENT (AMPS)
C
C
Figure 15. Inductive Storage Time,
@ I /I = 5
Figure 16. Inductive Storage Time,
t
t @ I /I = 10
si C B
si
C B
600
500
400
300
200
400
300
200
I
V
V
= I
= 15 V
= 300 V
= 200
T
T
= 125°C
= 25°C
Bon Boff
CC
J
J
I
V
V
= I
= 15 V
= 300 V
= 200 µH
Boff Bon
CC
Z
C
Z
C
L
µH
t
c
L
100
0
100
0
T
T
= 125
= 25°C
°
C
J
J
t
fi
0
1
2
3
4
0
1
2
3
4
I
, COLLECTOR CURRENT (AMPS)
I , COLLECTOR CURRENT (AMPS)
C
C
Figure 17. Inductive Switching,
Figure 18. Inductive Switching,
@ I /I = 10
t & t @ I /I = 5
t
fi
c
fi C B
C B
6
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
1500
1000
5
I
V
V
= I
= 15 V
= 300 V
= 200 µH
Bon Boff
CC
Z
C
T
T
= 125°C
= 25°C
I
= I
T
T
= 125°C
= 25°C
J
J
Boff Bon
J
J
V
V
L
= 15 V
CC
= 300 V
I
= 1 A
Z
C
C
L
= 200 µH
4
500
0
3
2
I
= 2 A
C
0
1
2
3
4
0
5
10
, FORCED GAIN
15
20
I
, COLLECTOR CURRENT (AMPS)
h
FE
C
Figure 19. Inductive Switching,
t @ I /I = 10
Figure 20. Inductive Storage Time
c
C B
450
350
250
1400
1200
1000
800
I
V
V
= I
= 15 V
= 300 V
= 200 µH
Boff Bon
CC
Z
C
T
T
= 125
°
C
I
V
V
= I
= 15 V
= 300 V
= 200 µH
T
T
= 125°C
= 25°C
J
J
Bon Boff
CC
Z
C
J
J
= 25°C
I
= 1 A
C
L
L
I
I
= 2 A
C
600
400
150
50
200
0
I
= 2 A
18
C
= 1 A
18
C
2
4
6
8
10
12
14
16
20
2
4
6
8
10
12
14
16
20
h
, FORCED GAIN
h , FORCED GAIN
FE
FE
Figure 21. Inductive Fall Time
Figure 22. Inductive Crossover Time
3000
2000
360
340
I
= I
I
V
V
= I
= 15 V
= 300 V
= 200 µH
B1 B2
Bon Boff
CC
Z
C
dI/dt = 10 A/
µs
T
= 25°C
C
L
I
= 50 mA
B
I
= 100 mA
B
1000
0
320
300
I
= 200 mA
B
I
= 500 mA
B
I
= 1 A
B
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
I
, COLLECTOR CURRENT (AMPS)
I , FORWARD CURRENT (AMP)
C
F
Figure 23. Inductive Storage Time, t
si
Figure 24. Forward Recovery Time t
fr
7
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
10
V
CE
9
8
7
6
5
4
3
2
I
90% I
C
C
dyn 1
µs
t
fi
t
si
dyn 3 µs
10% I
C
0 V
V
10% V
clamp
clamp
t
c
90% I
B
I
B
90% I
B1
1 µs
I
1
0
B
3
µs
0
1
2
3
4
5
6
8
7
TIME
TIME
Figure 25. Dynamic Saturation
Voltage Measurements
Figure 26. Inductive Switching Measurements
V
V
(1.1 V unless
F
FRM
FR
otherwise specified)
V
F
V
F
t
fr
0.1 V
F
0
I
F
10% I
F
0
2
4
6
8
10
Figure 27. t Measurements
fr
8
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
+15 V
I
PEAK
C
100 µF
1
µ
F
100
3 W
Ω
MTP8P10
MUR105
150
3 W
Ω
V
PEAK
CE
V
MTP8P10
CE
R
MPF930
B1
I
1
B
MPF930
I
+10 V
out
I
B
A
I
2
B
50
Ω
R
B2
MJE210
COMMON
MTP12N10
150
3 W
Ω
V
Inductive Switching
L = 200
RBSOA
L = 500 µH
(BR)CEO(sus)
L = 10 mH
µH
500 µF
R
=
∞
R
= 0
= 15 Volts
selected for
R
= 0
= 15 Volts
B2
B2
B2
V
= 20 Volts
= 100 mA
V
R
V
CC
CC
B1
CC
1
µF
I
R selected for
C(pk)
B1
–V
off
desired I
desired I
B1
B1
TYPICAL CHARACTERISTICS
100
10
6
5
T
≤ 125°C
≥ 5
= 2 mH
C
GAIN
1 µs
L
C
10
µs
4
3
2
5 ms
1 ms
1
DC
–5 V
0.1
1
0
0 V
–1.5 V
600
0.01
10
100
1000
200
300
400
500
700
800
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
CE
Figure 28. Forward Bias Safe Operating Area
Figure 29. Reverse Bias Safe Operating Area
9
Motorola Bipolar Power Transistor Device Data
TYPICAL CHARACTERISTICS
1
0.8
0.6
SECOND BREAKDOWN
DERATING
THERMAL DERATING
0.4
0.2
0
20
40
60
80
100
120
C)
140
160
T
, CASE TEMPERATURE (
°
C
Figure 30. Forward Bias Power Derating
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
T
may be calculated from the data in Figure 31. At any
J(pk)
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn–off with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating
area (Figure 29). This rating is verified under clamped
conditions so that the device is never subjected to an
avalanche mode.
down. Safe operating area curves indicate I –V
limits of
C
CE
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate. The data of Figure 28 is based
on T = 25°C; T
Second breakdown pulse limits are valid for duty cycles to
is variable depending on power level.
C
J(pk)
10% but must be derated when T > 25°C. Second
C
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
Figure 28 may be found at any case temperature by using
the appropriate curve on Figure 30.
TYPICAL THERMAL RESPONSE
1
0.5
0.2
0.1
P
(pk)
R
R
(t) = r(t) R
θ
θ
θ
JC
JC
JC
°C/W MAX
0.1
0.05
= 2.5
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.02
t
1
READ TIME AT t
1
t
2
SINGLE PULSE
T
– T = P
C
R
(t)
JC
J(pk)
(pk)
θ
DUTY CYCLE, D = t /t
1 2
0.01
0.01
0.1
1
10
100
1000
t, TIME (ms)
Figure 31. Typical Thermal Response (Z
θJC
(t)) for BUL45D2
10
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
A
K
Q
Z
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
1
2
3
U
H
L
R
J
V
G
T
U
V
D
N
Z
0.080
2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
11
Motorola Bipolar Power Transistor Device Data
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE: Motorola Literature Distribution;
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609
INTERNET: http://Design–NET.com
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
BUL45D2/D
◊
相关型号：
BUL45D2BC
TRANSISTOR 5 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power
ONSEMI
©2020 ICPDF网 联系我们和版权申明