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BU806 [ONSEMI]

DARLINGTON NPN POWER TRANSISTORS; 达林顿NPN功率晶体管
BU806
型号： BU806
厂家： ONSEMI    ONSEMI
描述：

DARLINGTON NPN POWER TRANSISTORS
达林顿NPN功率晶体管

晶体 晶体管
文件： 总4页 (文件大小：108K)
中文：  中文翻译
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by BU806/D  
SEMICONDUCTOR TECHNICAL DATA  
8.0 AMPERE  
DARLINGTON  
NPN POWER  
TRANSISTORS  
60 WATTS  
This Darlington transistor is a high voltage, high speed device for use in horizontal  
deflection circuits in TV’s and CRT’s.  
•
•
High Voltage: V  
= 330 or 400 V  
Fast Switching Speed:  
CEV  
t = 1.0 µs (max)  
c
200 VOLTS  
•
Low Saturation Voltage:  
V
= 1.5 V (max)  
CE(sat)  
Packaged in JEDEC TO–220AB  
Damper Diode V is specified.  
•
•
F
V
= 2.0 V (max)  
F
CASE 221A–06  
TO–220AB  
MAXIMUM RATINGS  
Rating  
Symbol  
BU806  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
200  
400  
400  
6.0  
V
CEV  
CBO  
EBO  
V
V
Collector Current — Continuous  
— Peak  
I
C
8.0  
15  
Emitter–Collector Diode Current  
Base Current  
I
10  
Adc  
Adc  
F
I
B
2.0  
Total Device Dissipation, T = 25°C  
Derate above T = 25 C  
C
P
D
60  
0.48  
Watts  
W/ C  
C
Operating and Storage Junction Temperature Range  
T , T  
–65 to 150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
2.08  
70  
Unit  
C/W  
C/W  
C
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
R
θJC  
θJA  
Lead Temperature for Soldering Purposes,  
1/8″ from Case for 5.0 Seconds  
T
L
275  
REV 1  
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (1)  
V
200  
—
—
—
—
—
—
Vdc  
µAdc  
µAdc  
mAdc  
CEO(sus)  
(I = 100 mAdc, I = 0)  
C
B
Collector Cutoff Current  
(V = Rated V , V  
I
I
100  
100  
3.0  
CES  
CEV  
EBO  
= 0)  
CE CBO BE  
Collector Cutoff Current  
(V = Rated V , V  
—
= 6.0 Vdc)  
CE CEV BE(off)  
Emitter Cutoff Current  
(V = 6.0 Vdc, I = 0)  
I
—
EB  
ON CHARACTERISTICS (1)  
Collector–Emitter Saturation Voltage  
(I = 5.0 Adc, I = 50 mAdc)  
C
V
—
—
—
—
—
—
1.5  
2.4  
2.0  
Vdc  
Vdc  
Vdc  
CE(sat)  
C
B
Base–Emitter Saturation Voltage  
(I = 5.0 Adc, I = 50 mAdc)  
V
BE(sat)  
C
B
Emitter–Collector Diode Forward Voltage  
(I = 4.0 Adc)  
F
V
F
SWITCHING CHARACTERISTICS  
Turn–On Time  
t
—
—
—
—
0.35  
0.55  
0.20  
0.40  
—
—
µs  
µs  
µs  
µs  
on  
(Resistive Load, V  
= 100 Vdc,  
= 5.0 Adc, I = 50 mAdc,  
CC  
Storage Time  
Fall Time  
t
s
I
C
B1  
= 500 mAdc)  
I
B2  
t
f
—
Crossover Time  
t
c
1.0  
(I = 5.0 Adc, I = 50 mAdc, V  
= 4.0 Vdc,  
C
clamp  
B1  
BE(off)  
V
= 200 Vdc, L = 500 µH)  
(1) Pulse Test: Pulse Width  
300 µs, Duty Cycle  
1%.  
600  
400  
20  
10  
non–repetitive  
5.0 ms  
V
T
= 5.0 V  
= 25°C  
CE  
J
10 µs  
1.0 ms  
300  
200  
dc  
1.0  
BONDING WIRE LIMIT  
THERMAL LIMIT  
SECOND BREAKDOWN LIMIT  
100  
80  
0.1  
0
60  
50 ms  
BU806  
40  
30  
T
= 25°C  
C
0.2  
0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0  
10  
3.0  
10  
60  
100  
200 300  
I
, COLLECTOR CURRENT (AMPS)  
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
C
CE  
Figure 1. DC Current Gain  
Figure 2. Safe Operating Area (FBSOA)  
2
Motorola Bipolar Power Transistor Device Data  
PACKAGE DIMENSIONS  
NOTES:  
SEATING  
PLANE  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
–T–  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION Z DEFINES A ZONE WHERE ALL  
BODY AND LEAD IRREGULARITIES ARE  
ALLOWED.  
C
S
B
F
T
4
INCHES  
MIN  
MILLIMETERS  
DIM  
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX  
0.620  
0.405  
0.190  
0.035  
0.147  
0.105  
0.155  
0.025  
0.562  
0.060  
0.210  
0.120  
0.110  
0.055  
0.255  
0.050  
–––  
MIN  
14.48  
9.66  
4.07  
0.64  
3.61  
2.42  
2.80  
0.46  
12.70  
1.15  
4.83  
2.54  
2.04  
1.15  
5.97  
0.00  
1.15  
–––  
MAX  
15.75  
10.28  
4.82  
0.88  
3.73  
2.66  
3.93  
0.64  
14.27  
1.52  
5.33  
3.04  
2.79  
1.39  
6.47  
1.27  
–––  
A
K
Q
Z
0.570  
0.380  
0.160  
0.025  
0.142  
0.095  
0.110  
0.018  
0.500  
0.045  
0.190  
0.100  
0.080  
0.045  
0.235  
0.000  
0.045  
–––  
1
2
3
U
H
L
R
J
V
G
T
U
V
D
N
Z
0.080  
2.04  
STYLE 1:  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
4. COLLECTOR  
CASE 221A–06  
TO–220AB  
ISSUE Y  
3
Motorola Bipolar Power Transistor Device Data  
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,  
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different  
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does  
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in  
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of  
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such  
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless  
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.  
Motorola and  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.  
How to reach us:  
USA / EUROPE: Motorola Literature Distribution;  
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,  
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447  
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315  
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609  
INTERNET: http://Design–NET.com  
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,  
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298  
BU806/D  
◊

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