概述
规格参数
数据手册
替代型号BTB16-600CW3G 概述
Triacs Silicon Bidirectional Thyristors 双向晶闸管硅双向晶闸管 TRIAC
BTB16-600CW3G 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Transferred | 零件包装代码： | TO-220AB |
| 包装说明： | LEAD FREE, CASE 221A-09, 3 PIN | 针数： | 3 |
| Reach Compliance Code： | not_compliant | ECCN代码： | EAR99 |
| HTS代码： | 8541.30.00.80 | 风险等级： | 5.71 |
| Is Samacsys： | N | 外壳连接： | MAIN TERMINAL 2 |
| 配置： | SINGLE | 关态电压最小值的临界上升速率： | 1000 V/us |
| 最大直流栅极触发电流： | 35 mA | 最大直流栅极触发电压： | 1.1 V |
| 最大维持电流： | 50 mA | JEDEC-95代码： | TO-220AB |
| JESD-30 代码： | R-PSFM-T3 | JESD-609代码： | e3 |
| 元件数量： | 1 | 端子数量： | 3 |
| 最高工作温度： | 125 °C | 最低工作温度： | -40 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | FLANGE MOUNT | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 认证状态： | Not Qualified | 最大均方根通态电流： | 16 A |
| 断态重复峰值电压： | 600 V | 子类别： | TRIACs |
| 表面贴装： | NO | 端子面层： | Tin (Sn) |
| 端子形式： | THROUGH-HOLE | 端子位置： | SINGLE |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 触发设备类型： | 4 QUADRANT LOGIC LEVEL TRIAC |
| Base Number Matches： | 1 |
BTB16-600CW3G 数据手册
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PDF下载BTB16-600CW3G,
BTB16-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full‐wave ac control applications
where high noise immunity and high commutating di/dt are required.
http://onsemi.com
Features
TRIACS
•ăBlocking Voltage to 800 V
16 AMPERES RMS
600 thru 800 VOLTS
•ăOn‐State Current Rating of 16 A RMS at 25°C
•ăUniform Gate Trigger Currents in Three Quadrants
•ăHigh Immunity to dV/dt - 1000 V/ms minimum at 125°C
•ăMinimizes Snubber Networks for Protection
•ăIndustry Standard TO‐220AB Package
•ăHigh Commutating dI/dt - 6.0 A/ms minimum at 125°C
•ăThese are Pb-Free Devices
MT2
4
MT1
G
MARKING
DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage (Note 1)
(T = -40 to 125°C, Sine Wave,
V
V
RRM
V
DRM,
J
50 to 60 Hz, Gate Open)
BTB16-600CW3G
BTB16-800CW3G
BTB16-xCWG
AYWW
TO-220AB
CASE 221A
STYLE 4
600
800
1
2
3
On‐State RMS Current
(Full Cycle Sine Wave, 60 Hz, T = 80°C)
I
16
A
A
T(RMS)
C
x
= 6 or 8
= Assembly Location
= Year
Peak Non‐Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
I
170
TSM
A
Y
T
C
= 25°C)
WW
G
= Work Week
= Pb-Free Package
2
2
Circuit Fusing Consideration (t = 10 ms)
I t
144
A sec
Non-Repetitive Surge Peak Off-State
Voltage (T = 25°C, t = 10ms)
V
V
V
V
V
DSM/
DSM/ RSM
+100
J
RSM
PIN ASSIGNMENT
Peak Gate Current (T = 125°C, t = 20ms)
I
4.0
A
J
GM
1
2
3
4
Main Terminal 1
Peak Gate Power
(Pulse Width ≤ 1.0 ms, T = 80°C)
P
20
W
GM
C
Main Terminal 2
Gate
Average Gate Power (T = 125°C)
P
G(AV)
1.0
W
°C
°C
J
Operating Junction Temperature Range
Storage Temperature Range
T
-ā40 to +125
-ā40 to +150
J
Main Terminal 2
T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping
1. V
and V
for all types can be applied on a continuous basis. Blocking
DRM
RRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
BTB16-600CW3G TO-220AB
(Pb-Free)
50 Units / Rail
BTB16-800CW3G TO-220AB
(Pb-Free)
50 Units / Rail
*For additional information on our Pb-Free strategy and
soldering details, please download the ON Semicon‐
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
©ꢀ Semiconductor Components Industries, LLC, 2008
February, 2008 - Rev. 1
1
Publication Order Number:
BTB16-600CW3/D
BTB16-600CW3G, BTB16-800CW3G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
Junction-to-Case
Junction-to-Ambient
R
2.1
60
°C/W
q
q
JC
R
JA
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
T
L
260
°C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
, V
I
/
mA
DRM
I
RRM
(V = Rated V
D
; Gate Open)
T = 25°C
T = 125°C
J
-
-
-
-
0.005
2.0
DRM
RRM
J
ON CHARACTERISTICS
Peak On‐State Voltage (Note 2)
(I ā22.5 A Peak)
V
TM
-
-
1.55
V
=
TM
Gate Trigger Current (Continuous dc) (V = 12 V, R = 33 W)
D
I
mA
L
GT
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
2.0
2.0
2.0
-
-
-
35
35
35
Holding Current
(V = 12 V, Gate Open, Initiating Current = 500 mA)
I
-
-
50
mA
mA
H
D
Latching Current (V = 12 V, I = 1.2 x I
D
)
GT
I
G
L
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
-
-
-
-
-
-
60
65
60
Gate Trigger Voltage (V = 12 V, R = 33 W)
L
V
V
V
D
GT
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
0.5
0.5
0.5
-
-
-
1.7
1.1
1.1
Gate Non-Trigger Voltage (T = 125°C)
V
GD
J
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
0.2
0.2
0.2
-
-
-
-
-
-
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, T = 125°C, No Snubber)
(dI/dt)
dI/dt
6.0
-
-
-
-
-
50
-
A/ms
A/ms
V/ms
c
J
Critical Rate of Rise of On-State Current
(T = 125°C, f = 120 Hz, I = 2 x I , tr ≤ 100 ns)
J
G
GT
Critical Rate of Rise of Off‐State Voltage
(V = 0.66 x V
, Exponential Waveform, Gate Open, T = 125°C)
dV/dt
1000
D
DRM
J
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
http://onsemi.com
2
BTB16-600CW3G, BTB16-800CW3G
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
Parameter
V
TM
V
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
DRM
DRM
on state
I
I
H
I
at V
RRM
V
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
RRM
RRM
RRM
I
V
Maximum On State Voltage
Holding Current
+ Voltage
at V
DRM
off state
TM
I
H
I
DRM
I
H
Quadrant 3
V
TM
MainTerminal 2 -
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(-) I
GT
GATE
(+) I
GT
GATE
MT1
MT1
REF
REF
I
-
+ I
GT
GT
(-) MT2
(-) MT2
Quadrant III
Quadrant IV
(+) I
GT
GATE
(-) I
GT
GATE
MT1
REF
MT1
REF
-
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in-phase signals (using standard AC lines) quadrants I and III are used.
http://onsemi.com
3
BTB16-600CW3G, BTB16-800CW3G
125
120
115
110
105
100
95
24
22
DC
180°
120°
20
30°
60°
90°
18
16
14
12
120°
180°
10
8
90
DC
90°
85
6
60°
80
4
30°
75
2
70
0
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
I
, RMS ON‐STATE CURRENT (AMP)
I , AVERAGE ON‐STATE CURRENT (AMP)
T(AV)
T(RMS)
Figure 1. Typical RMS Current Derating
Figure 2. On‐State Power Dissipation
100
1
TYPICAL AT
MAXIMUM @ T = 125°C
J
T = 25°C
J
0.1
10
0.01
4
0.1
1
10
100
1000
1ā·ā10
t, TIME (ms)
Figure 4. Thermal Response
40
35
30
25
20
15
10
5
MAXIMUM @ T = 25°C
J
1
MT2 POSITIVE
MT2 NEGATIVE
-40 -25 -10
5
20 35 50 65 80 95 110 125
0.1
0
0.5
1
1.5
2
2.5
3
3.5
4
V , INSTANTANEOUS ON‐STATE VOLTAGE (V)
T
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. On‐State Characteristics
Figure 5. Typical Hold Current Variation
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4
BTB16-600CW3G, BTB16-800CW3G
1.6
100
10
1
V
= 12 V
V
= 12 V
D
R = 30 W
D
R = 30 W
L
L
1.4
1.2
1
Q3
Q1
Q1
Q2
Q3
0.8
0.6
0.4
Q2
-40 -25 -10
5
20 35 50 65 80 95 110 125
-40 -25 -10
5
20 35 50 65 80 95 110 125
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Typical Gate Trigger Voltage Variation
Figure 6. Typical Gate Trigger Current Variation
5000
4K
3K
2K
1K
0
100
V
= 800 Vpk
D
T = 125°C
J
T = 125°C
100°C
75°C
J
10
I
TM
1
f =
t
w
2 t
w
6f I
TM
(di/dt)
=
c
1000
V
DRM
1
10
10
100
1000
10000
20
30
40
50
60
70
80
90
100
R , GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
G
(di/dt) , RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
c
Figure 8. Critical Rate of Rise of Off‐State Voltage
(Exponential Waveform)
Figure 9. Critical Rate of Rise of
Commutating Voltage
L
L
1N4007
200 V
RMS
ADJUST FOR
, 60 Hz V
MEASURE
I
I
TM
AC
CHARGE
-
+
TRIGGER
CONTROL
200 V
CHARGE
MT2
G
1N914
51 W
MT1
NON‐POLAR
C
L
Note: Component values are for verification of rated (di/dt) . See AN1048 for additional information.
c
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
http://onsemi.com
5
BTB16-600CW3G, BTB16-800CW3G
PACKAGE DIMENSIONS
TO-220
CASE 221A-07
ISSUE AA
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
-T-
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
4
3
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.022
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
Q
A
K
1
2
U
H
G
H
J
Z
K
L
N
Q
R
S
T
R
L
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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BTB16-600CW3/D
BTB16-600CW3G CAD模型
引脚图
封装焊盘图
BTB16-600CW3G 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| BTA16-600BW3G | LITTELFUSE | 此三端双向可控硅专门用于需要高抗扰度和换向di/dt的高性能全波交流控制应用。 功能与特色 | 功能相似 |
|
| BTA316-800B | WEEN | Planar passivated high commutation three quadrant triac in a SOT78 plastic package intende | 功能相似 |
|
BTB16-600CW3G 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BTB16-600CWRG | STMICROELECTRONICS | 16A TRIACS | 获取价格 |
|
| BTB16-600G | STMICROELECTRONICS | 16 A Snubberless?, logic level and standard Triacs | 获取价格 |
|
| BTB16-600G-TR | STMICROELECTRONICS | 16 A Snubberless?, logic level and standard Triacs | 获取价格 |
|
| BTB16-600SW | STMICROELECTRONICS | 16A TRIACS | 获取价格 |
|
| BTB16-600SWRG | STMICROELECTRONICS | 16A TRIACS | 获取价格 |
|
| BTB16-700AW | ETC | TRIAC|700V V(DRM)|16A I(T)RMS|TO-220 | 获取价格 |
|
| BTB16-700B | STMICROELECTRONICS | STANDARD TRIACS | 获取价格 |
|
| BTB16-700B/F2 | STMICROELECTRONICS | 700V, 16A, TRIAC, TO-220, 3 PIN | 获取价格 |
|
| BTB16-700B/F3 | STMICROELECTRONICS | 700V, 16A, TRIAC, TO-220, 2 PIN | 获取价格 |
|
| BTB16-700B/F5 | STMICROELECTRONICS | 700V, 16A, TRIAC, TO-220AB, TO-220, 3 PIN | 获取价格 |
|
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