BSR17A [ONSEMI]
NPN 通用放大器;
| 型号： | BSR17A |
| 厂家： | 
ONSEMI |
| 描述： | NPN 通用放大器 放大器 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：438K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
June 2007
BSR17A
NPN General Purpose Amplifier
C
E
B
SOT-23
MARK: U92
Features
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings *Ta = 25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
60
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Junction Temperature
Storage Temperature
40
V
6.0
V
200
mA
°C
TJ
-55 ~ +150
-55 ~ +150
TSTG
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics *Ta = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
PD
Total Device Dissipation
350
mW
mW/℃
Derate above 25℃
2.8
R θ JA
Thermal Resistance, Junction to Ambient
357
℃/W
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
©2007 Fairchild Semiconductor Corporation
Rev. A
1
www.fairchildsemi.com
Electrical Characteristics *Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
MIN
MAX
Units
Off Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0
40
60
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
IC = 10 µA, IB = 0
IC = 10 µA, IB = 0
6.0
V
VCB = 30 V, TA = 150°C
VCE = 30 V, VEB = 3.0 V
VCE = 30 V, VEB = 3.0 V
5.0
50
50
µA
nA
nA
ICEX
Emitter-Cutoff Current
IBEX
IBEX Reverse Base Current
On Characteristics
hFE
DC Current Gain
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
40
70
100
60
300
30
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage * IC = 10 mA, IB = 1.0 mA
0.2
0.3
V
V
IC = 50 mA, IB = 5.0 mA
Emitter-Base Breakdown Voltage *
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.65
300
0.85
0.95
V
V
Small Signal Characteristics
fT
Transition Frequency
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
IC = 20 mA, VCE = 20 V, f = 100 MHz
VCB = 0.5 V, IE = 0, f = 1.0 MHz
VEB = 0.5 V, IC = 0, f = 1.0 MHz
VCE= 10 V,IC= 1.0 mA,f=1.0 kHz
VCE= 10 V,IC= 1.0 mA,f=1.0 kHz
VCE= 10 V,IC= 1.0 mA,f=1.0 kHz
MHz
pF
Ccb
Ceb
hie
hfe
hoe
4.0
8.0
10
pF
1.0
100
1.0
kΩ
Small-Signal Current Gain
Output Admittance
400
40
µS
Switching Characteristics
td
tr
Delay Time
Rise Time
Storage Time
Fall Time
IC = 10 mA, IB1 = 1.0 mA,VEB= 0.5 V
IC = 10 mA, IBon = IBoff = 1.0 mA
35
4.0
200
50
ns
pF
ns
ns
ts
tf
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0 %
Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
2
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BSR17A Rev. A
Typical Performance Characteristics
3
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BSR17A Rev. A
Typical Performance Characteristics (continued)
4
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BSR17A Rev. A
Typical Performance Characteristics (continued)
Test Circuits
5
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BSR17A Rev. A
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Formative or In Design
This datasheet contains the design specifications for
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any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
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design.
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Obsolete
Full Production
This datasheet contains final specifications. Fairchild
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any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I23
6
www.fairchildsemi.com
BSR17A Rev. A
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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