BS170RLRA [ONSEMI]

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET; 小信号MOSFET小信号MOSFET小信号MOSFET
BS170RLRA
型号: BS170RLRA
厂家: ONSEMI    ONSEMI
描述:

Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET
小信号MOSFET小信号MOSFET小信号MOSFET

晶体 晶体管 开关
文件: 总4页 (文件大小:56K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BS170  
Preferred Device  
Small Signal MOSFET  
500 mA, 60 V  
N−Channel TO−92 (TO−226)  
Features  
http://onsemi.com  
Pb−Free Package is Available*  
500 mA, 60 V  
RDS(on) = 5 W  
MAXIMUM RATINGS  
Rating  
DrainSource Voltage  
Symbol  
Value  
Unit  
V
DS  
60  
Vdc  
N−Channel  
Gate−Source Voltage  
− Continuous  
D
V
V
GSM  
±20  
±40  
Vdc  
Vpk  
GS  
− Non−repetitive (t 50 ms)  
p
Drain Current (Note)  
I
0.5  
Adc  
mW  
°C  
D
G
Total Device Dissipation @ T = 25°C  
P
350  
A
D
Operating and Storage Junction  
Temperature Range  
T , T  
55 to  
+150  
J
stg  
S
1. The Power Dissipation of the package may result in a lower continuous drain  
current.  
TO−92 (TO−226)  
CASE 29  
STYLE 30  
1
2
3
MARKING DIAGRAM  
& PIN ASSIGNMENT  
BS170  
YWW  
1
3
Drain  
Source  
2
Gate  
Y
WW  
= Year  
= Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
April, 2004 − Rev. 4  
BS170/D  
BS170  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Gate Reverse Current  
I
0.01  
90  
10  
nAdc  
Vdc  
GSS  
(V = 15 Vdc, V = 0)  
GS  
DS  
Drain−Source Breakdown Voltage  
(V = 0, I = 100 mAdc)  
V
60  
(BR)DSS  
GS  
D
ON CHARACTERISTICS (Note 1)  
Gate Threshold Voltage  
V
0.8  
2.0  
1.8  
3.0  
5.0  
0.5  
Vdc  
W
GS(Th)  
(V = V , I = 1.0 mAdc)  
DS  
GS  
D
Static Drain−Source On Resistance  
(V = 10 Vdc, I = 200 mAdc)  
r
DS(on)  
GS  
D
Drain Cutoff Current  
(V = 25 Vdc, V = 0 Vdc)  
I
mA  
D(off)  
DS  
GS  
Forward Transconductance  
(V = 10 Vdc, I = 250 mAdc)  
g
fs  
200  
mmhos  
DS  
D
SMALL−SIGNAL CHARACTERISTICS  
Input Capacitance  
C
60  
pF  
iss  
(V = 10 Vdc, V = 0, f = 1.0 MHz)  
DS  
GS  
SWITCHING CHARACTERISTICS  
Turn−On Time  
(I = 0.2 Adc) See Figure 1  
D
t
t
4.0  
4.0  
10  
10  
ns  
ns  
on  
Turn−Off Time  
off  
(I = 0.2 Adc) See Figure 1  
D
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.  
ORDERING INFORMATION  
Device  
Package  
Shipping†  
BS170  
TO−92 (TO−226)  
1000 Unit / Box  
1000 Unit / Box  
BS170G  
TO−92 (TO−226)  
(Pb−Free)  
BS170RLRA  
BS170RLRM  
BS170RLRP  
BS170RL1  
2000 Tape & Reel  
2000 Tape & Ammo Box  
2000 Tape & Ammo Box  
2000 Tape & Reel  
TO−92 (TO−226)  
BS170ZL1  
2000 Tape & Ammo Box  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
2
 
BS170  
RESISTIVE SWITCHING  
+25 V  
t
on  
t
off  
V
in  
125 W  
TO SAMPLING SCOPE  
50 W INPUT  
V
20 dB  
PULSE GENERATOR  
90%  
out  
40 pF  
50 W ATTENUATOR  
10%  
OUTPUT  
V
out  
50 W  
INVERTED  
50 W  
1.0 MW  
90%  
50%  
10%  
V
in  
INPUT  
PULSE  
WIDTH  
(V Amplitude 10 Volts)  
in  
Figure 2. Switching Waveforms  
Figure 1. Switching Test Circuit  
2.0  
1.6  
2.0  
1.6  
1.2  
0.8  
0.4  
V
GS  
= 10 V  
V
= V  
GS  
= 1.0 mA  
DS  
I
D
9.0 V  
8.0 V  
7.0 V  
1.2  
0.8  
6.0 V  
5.0 V  
4.0 V  
0.4  
0
100  
T , JUNCTION TEMPERATURE (°C)  
150  
0
1.0  
, DRAINTꢀ O−SOURCE VOLTAGE (VOLTS)  
DS  
2.0  
3.0  
4.0  
50  
0
50  
V
J
Figure 3. VGS(th) Normalized versus Temperature  
Figure 4. On−Region Characteristics  
2.0  
100  
V
GS  
= 10 V  
9.0 V  
8.0 V  
V
GS  
= 0 V  
1.6  
1.2  
0.8  
0.4  
80  
60  
40  
20  
7.0 V  
6.0 V  
C
iss  
5.0 V  
4.0 V  
C
oss  
C
rss  
20  
, DRAINTꢀ O−SOURCE VOLTAGE (VOLTS)  
0
10  
30  
40  
0
10  
20  
V , DRAINTꢀ O−SOURCE VOLTAGE (VOLTS)  
DS  
30  
40  
50  
60  
V
DS  
Figure 5. Output Characteristics  
Figure 6. Capacitance versus  
Drain−To−Source Voltage  
http://onsemi.com  
3
BS170  
PACKAGE DIMENSIONS  
TO−92 (TO−226)  
CASE 29−11  
ISSUE AL  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
A
B
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND  
BEYOND DIMENSION K MINIMUM.  
P
L
SEATING  
PLANE  
INCHES  
DIM MIN MAX  
MILLIMETERS  
K
MIN  
4.45  
4.32  
3.18  
0.407  
1.15  
2.42  
0.39  
12.70  
6.35  
2.04  
−−−  
MAX  
5.20  
5.33  
4.19  
0.533  
1.39  
2.66  
0.50  
−−−  
A
B
C
D
G
H
J
0.175  
0.170  
0.125  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
−−−  
0.205  
0.210  
0.165  
0.021  
0.055  
0.105  
0.020  
−−−  
D
X X  
G
J
H
V
K
L
−−−  
−−−  
C
N
P
R
V
0.105  
0.100  
−−−  
2.66  
2.54  
−−−  
SECTION X−X  
0.115  
0.135  
2.93  
3.43  
1
N
−−−  
−−−  
N
STYLE 30:  
PIN 1. DRAIN  
2. GATE  
3. SOURCE  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
BS170/D  

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