BMS3003-1E [ONSEMI]
P 沟道，功率 MOSFET，-60V，-78A，6.5mΩ;
| 型号： | BMS3003-1E |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，功率 MOSFET，-60V，-78A，6.5mΩ |
| 文件： | 总5页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1907B
BMS3003
P-Channel Power MOSFET
http://onsemi.com
–
–
Ω
60V, 78A, 6.5m , TO-220F-3SG
Features
•
ON-resistance R (on)1=5.0m (typ.)
Input capacitance Ciss=13200pF (typ.)
-4V drive
Ω
DS
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
--60
Unit
V
V
DSS
V
±20
V
GSS
I
--78
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
--312
2.0
A
≤
μ
≤
DP
W
W
Allowable Power Dissipation
P
D
Tc=25 C
40
°
Channel Temperature
Tch
150
C
C
°
°
Storage Temperature
Tstg
--55 to +150
420
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
mJ
A
AS
I
AV
--60
Note : 1 V =--36V, L=100 H, I =--60A (Fig.1)
*
μ
DD
2 L 100 H, Single pulse
AV
*
≤
μ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ.)
Product & Package Information
• Package
: TO-220F-3SG
7529-001
• JEITA, JEDEC
: SC-67
•
Minimum Packing Quantity : 50 pcs./tube
BMS3003-1E
4.7
10.16
3.18
2.54
Marking
Electrical Connection
2
A
MS3003
1
LOT No.
2.76
1.47 MAX
0.8
DETAIL-A
3
(0.84)
1
2
3
0.5
1 : Gate
FRAME
2 : Drain
3 : Source
EMC
2.54
2.54
TO-220F-3SG
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
April, 2014
40714 TKIM/91212 TKIM TC-00002812/D2210QA TKIM TC-00002546 No.A1907-1/5
BMS3003
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--60
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V
I
=-- 1mA, V =0V
V
μA
μA
V
(BR)DSS
D GS
I
I
V
V
V
V
=--60V, V =0V
GS
--10
DSS
DS
GS
DS
DS
=±16V, V =0V
DS
±10
GSS
V
(off)
GS
=-- 10V, I =-- 1mA
--1.2
--2.6
D
Forward Transfer Admittance
| yfs |
=-- 10V, I =--39A
130
5.0
S
D
R
R
(on)1
(on)2
I
I
=--39A, V =-- 10V
GS
6.5
9.0
mΩ
mΩ
pF
pF
pF
ns
DS
D
D
Static Drain to Source On-State Resistance
=--39A, V =-- 4V
GS
6.5
DS
Input Capacitance
Ciss
13200
1300
950
90
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--20V, f=1MHz
DS
t
t
t
t
(on)
d
r
360
1200
680
285
35
ns
See Fig.2
Turn-OFF Delay Time
Fall Time
(off)
ns
d
f
ns
Total Gate Charge
Qg
nC
nC
nC
V
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Qgs
Qgd
V
=--36V, V =--10V, I =--78A
GS
DS
D
70
V
I =--78A, V =0V
--0.95
150
470
--1.5
SD
S
GS
t
ns
See Fig.3
rr
I =--78A, V =0V, di/dt=--100A/
s
μ
Q
nC
S
GS
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.2 Switching Time Test Circuit
V = -36V
DD
V
IN
D
0V
10V
L
-
≥50Ω
I
=
-
39A
D
RG
G
V
IN
R =0.92Ω
L
D
V
OUT
BMS3003
PW=10μs
D.C.≤1%
0V
10V
S
V
DD
50Ω
-
G
BMS3003
P. G
50Ω
S
Fig.3 Reverse Recovery Time Test Circuit
D
BMS3003
L
G
V
DD
S
Driver MOSFET
Ordering Information
Device
Package
Shipping
memo
Pb Free
BMS3003-1E
TO-220F-3SG
50pcs./tube
No.A1907-2/5
BMS3003
I
D
-- V
DS
I
-- V
D GS
--160
--140
--120
--100
--80
--160
--140
--120
--100
--80
Tc=25°C
V
DS
= --10V
--60
--60
--40
--40
--20
0
--20
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
0
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
IT16240
Drain to Source Voltage, V
DS
-- V
IT16239
Gate to Source Voltage, V -- V
GS
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
16
14
12
10
8
16
14
12
10
8
Single pulse
I = --39A
D
Single pulse
6
6
4
4
2
0
2
0
--50
--25
0
25
50
75
100
125
150
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
Gate to Source Voltage, V
-- V
IT16241
Case Temperature, Tc -- °C
IT16242
GS
| yfs | -- I
I
-- V
D
S SD
--1000
1000
7
V
=0V
V
= --10V
7
5
DS
GS
Single pulse
5
3
2
3
2
--100
7
5
3
2
100
7
5
--10
7
5
3
3
2
2
--1.0
7
5
10
7
5
3
2
--0.1
7
3
2
5
3
2
--0.01
1.0
--0.1
2
3
5
7
2
3
5
7
2
3
5
7
--100
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT16244
-- V
--1.4
--1.0
--10
Drain Current, I -- A
IT16243
Diode Forward Voltage, V
SD
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
10000
100000
f=1MHz
V
V
= --36V
= --10V
7
5
7
5
DD
GS
3
2
3
2
1000
10000
t
7
5
7
5
f
3
2
3
2
t
r
t (on)
100
7
5
1000
d
7
5
3
2
3
2
10
--0.1
100
2
3
5
7
2
3
5
7
2
3
5
7
0
--5
--10
--15
--20
--25
--30
IT16246
--1.0
--10
--100
Drain Current, I -- A
IT16245
Drain to Source Voltage, V
DS
-- V
D
No.A1907-3/5
BMS3003
V
GS
-- Qg
A S O
--1000
--10
--9
--8
--7
--6
--5
--4
--3
--2
7
V
= --36V
DS
= --78A
5
I
= --312A (PW≤10μs)
DP
= --78A
D
I
D
3
2
I
--100
7
5
3
2
--10
7
5
Operation in
this area is
3
2
limited by R (on).
DS
--1.0
7
5
3
2
Tc=25°C
Single pulse
--1
0
--0.1
--0.1
2
3
5
7
2
3
5
7
2
3
5
7
0
0
0
50
100
150
200
250
300
--1.0
--10
--100
IT16248
IT16247
Drain to Source Voltage, V
DS
-- V
Total Gate Charge, Qg -- nC
P
-- Ta
P
-- Tc
D
D
45
2.5
2.0
1.5
1.0
40
35
30
25
20
15
10
0.5
0
5
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT16249
Case Temperature, Tc -- °C
IT16250
E
-- Ta
AS
120
100
80
60
40
20
0
20
40
60
80
100
120
140
160
IT16251
Ambient Temperature, Ta -- °C
No.A1907-4/5
BMS3003
Outline Drawing
BMS3003-1E
Mass (g) Unit
1.8
mm
* For reference
Note on usage : Since the BMS3003 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.A1907-5/5
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