BF423 [ONSEMI]

High Voltage Transistors(PNP Silicon); 高压晶体管( PNP硅)
BF423
型号: BF423
厂家: ONSEMI    ONSEMI
描述:

High Voltage Transistors(PNP Silicon)
高压晶体管( PNP硅)

晶体 晶体管 高压
文件: 总4页 (文件大小:86K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Order this document  
by BF421/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
2
3
BASE  
1
EMITTER  
1
2
3
MAXIMUM RATINGS  
Rating  
Symbol  
BF421  
–300  
BF423  
Unit  
Vdc  
CASE 29–11, STYLE 14  
TO–92 (TO–226AA)  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
CEO  
V
CBO  
V
EBO  
–250  
–250  
–300  
Vdc  
–5.0  
Vdc  
Collector Current — Continuous  
I
C
–500  
mAdc  
Total Device Dissipation  
P
625  
5.0  
mW  
mW/°C  
D
D
@ T = 25°C  
A
Derate above 25°C  
Total Device Dissipation  
P
1.5  
12  
Watts  
mW/°C  
@ T = 25°C  
C
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
55 to +150  
°C  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
(I = –1.0 mAdc, I = 0)  
V
Vdc  
(BR)CEO  
BF421  
BF423  
–300  
–250  
C
B
CollectorBase Breakdown Voltage  
(I = –100 Adc, I = 0)  
V
Vdc  
Vdc  
(BR)CBO  
BF421  
BF423  
–300  
–250  
C
E
EmitterBase Breakdown Voltage  
(I = –100 Adc, I = 0)  
V
(BR)EBO  
BF421  
BF423  
–5.0  
–5.0  
E
C
Collector Cutoff Current  
(V = –200 Vdc, I = 0)  
I
Adc  
CBO  
BF421  
BF423  
–0.01  
CB  
E
Emitter Cutoff Current  
(V = –5.0 Vdc, I = 0)  
I
nAdc  
EBO  
BF421  
BF423  
–100  
EB  
C
1. Pulse Test: Pulse Width  
REV 1  
300 s; Duty Cycle  
2.0%.  
Motorola, Inc. 1998
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)  
A
Characteristic  
ON CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
DC Current Gain  
(I = –25 mA, V  
C
h
FE  
= –20 Vdc)  
CE  
BF421  
BF423  
50  
50  
CollectorEmitter Saturation Voltage  
(I = –20 mAdc, I = –2.0 mAdc)  
V
V
–0.5  
Vdc  
Vdc  
CE(sat)  
C
B
BaseEmitter Saturation Voltage  
(I = –20 mA, I = –2.0 mA)  
–2.0  
BE(sat)  
C
B
SMALLSIGNAL CHARACTERISTICS  
CurrentGain — Bandwidth Product  
f
60  
MHz  
pF  
T
(I = –10 mAdc, V  
= –10 Vdc, f = 20 MHz)  
C
CE  
Common Emitter Feedback Capacitance  
(V = –30 Vdc, I = 0, f = 1.0 MHz)  
C
2.8  
re  
CB  
E
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
300  
250  
V
= 10 Vdc  
CE  
T
= +125°C  
J
200  
150  
100  
25°C  
–55°C  
50  
0
0.1  
1.0  
10  
100  
I
, COLLECTOR CURRENT (mA)  
C
Figure 1. DC Current Gain  
100  
10  
150  
130  
C
@ 1MHz  
ib  
110  
90  
C
cb  
@ 1MHz  
70  
50  
30  
1.0  
0.1  
T
= 25°C  
= 20 Vdc  
J
V
CE  
F = 20 MHz  
10  
0.1  
1.0  
10  
, REVERSE VOLTAGE (VOLTS)  
100  
1000  
11  
I , COLLECTOR CURRENT (mA)  
C
13  
15  
17  
19  
21  
1
3
5
7
9
V
R
Figure 2. Capacitance  
Figure 3. Current–Gain — Bandwidth  
1.4  
1.2  
1.0  
V
@ 25  
°
C, I /I = 10  
CE(sat)  
CE(sat)  
CE(sat)  
BE(sat)  
C B  
V
V
V
@ 125  
@ –55  
°C, I /I = 10  
C B  
°
C, I /I = 10  
C B  
@ 25  
°
C, I /I = 10  
C B  
C, I /I = 10  
C B  
0.8  
0.6  
V
@ 125  
@ –55  
°
BE(sat)  
BE(sat)  
V
°
C, I /I = 10  
C B  
V
V
V
@ 25  
°
C, V  
= 10 V  
BE(on)  
BE(on)  
BE(on)  
CE  
C, V  
0.4  
0.2  
0.0  
@ 125  
@ –55  
°
°
= 10 V  
= 10 V  
CE  
C, V  
CE  
0.1  
1.0  
10  
100  
I
, COLLECTOR CURRENT (mA)  
C
Figure 4. ”ON” Voltages  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
3
PACKAGE DIMENSIONS  
NOTES:  
A
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
B
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
4. LEAD DIMENSION IS UNCONTROLLED IN P AND  
BEYOND DIMENSION K MINIMUM.  
R
P
L
INCHES  
MIN  
MILLIMETERS  
SEATING  
PLANE  
K
DIM  
A
B
C
D
G
H
J
K
L
N
P
MAX  
0.205  
0.210  
0.165  
0.021  
0.055  
0.105  
0.020  
–––  
MIN  
4.45  
4.32  
3.18  
0.407  
1.15  
2.42  
0.39  
12.70  
6.35  
2.04  
–––  
MAX  
5.20  
5.33  
4.19  
0.533  
1.39  
2.66  
0.50  
–––  
0.175  
0.170  
0.125  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
–––  
D
X X  
G
J
H
V
–––  
–––  
C
0.105  
0.100  
–––  
2.66  
2.54  
–––  
SECTION X–X  
R
V
0.115  
0.135  
2.93  
3.43  
1
N
–––  
–––  
N
STYLE 14:  
PIN 1. EMITTER  
CASE 029–11  
(TO–226AA)  
ISSUE AJ  
2. COLLECTOR  
3. BASE  
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and  
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola  
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,includingTypicals”  
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of  
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other  
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury  
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola  
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees  
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that  
Motorola was negligent regarding the design or manufacture of the part. Motorola and  
Opportunity/Affirmative Action Employer.  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal  
Mfax is a trademark of Motorola, Inc.  
How to reach us:  
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;  
JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141,  
P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan. 81–3–5487–8488  
Customer Focus Center: 1–800–521–6274  
Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 1–602–244–6609  
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,  
Motorola Fax Back System  
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298  
– http://sps.motorola.com/mfax/  
HOME PAGE: http://motorola.com/sps/  
BF421/D  

相关型号:

BF423,116

TRANSISTOR 50 mA, 250 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal
NXP

BF423-A

Small Signal Bipolar Transistor, 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
DIODES

BF423-AMMO

TRANSISTOR 50 mA, 250 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal
NXP

BF423-AP

Small Signal Bipolar Transistor, 0.1A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC

BF423-AP-HF

Small Signal Bipolar Transistor,
MCC

BF423-B

Transistor
MCC

BF423-BP

Small Signal Bipolar Transistor, 0.1A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC

BF423-BP-HF

Small Signal Bipolar Transistor,
MCC

BF423-T/R

50mA, 250V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN
NXP

BF423A3

PNP Epitaxial Planar Transistor
CYSTEKEC

BF423A3S

PNP Epitaxial Planar Transistor
CYSTEKEC

BF423G

High Voltage Transistors
ONSEMI