BCX18LT1G [ONSEMI]
General Purpose Transistors; 通用晶体管![BCX18LT1G](http://pdffile.icpdf.com/pdf1/p00170/img/icpdf/BCX18_952800_icpdf.jpg)
型号: | BCX18LT1G |
厂家: | ![]() |
描述: | General Purpose Transistors |
文件: | 总4页 (文件大小:125K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BCX18LT1G, PNP
BCX19LT1G, NPN
General Purpose
Transistors
Voltage and Current are Negative for
PNP Transistors
http://onsemi.com
PNP
NPN
Features
COLLECTOR
3
COLLECTOR
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
1
BASE
2
EMITTER
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
3
Collector − Emitter Voltage
BCX19LT1
BCX18LT1
V
CEO
Vdc
45
25
1
Collector − Base Voltage
BCX19LT1
BCX18LT1
V
Vdc
2
CBO
50
30
SOT−23
CASE 318
STYLE 6
Emitter − Base Voltage
V
5.0
Vdc
EBO
Collector Current − Continuous
I
C
500
mAdc
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
P
225
mW
D
xx M G
(Note 1), T = 25°C
A
G
Derate above 25°C
1.8
mW/°C
°C/W
1
Thermal Resistance,
Junction−to−Ambient
xx
M
G
= T2 or U1
= Date Code*
= Pb−Free Package
R
q
556
JA
Total Device Dissipation Alumina
P
D
Substrate, (Note 2) T = 25°C
300
2.4
mW
mW/°C
A
(Note: Microdot may be in either location)
Derate above 25°C
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Thermal Resistance,
Junction−to−Ambient
R
417
°C/W
°C
q
JA
Junction and Storage Temperature
T , T
J
−55 to +150
stg
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2009 − Rev. 0
BCX18LT1/D
BCX18LT1G, PNP BCX19LT1G, NPN
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I = 10 mAdc, I = 0)
V
Vdc
(BR)CEO
BCX19
BCX18
45
25
−
−
−
−
C
B
Collector−Emitter Breakdown Voltage
(I = 10 mAdc, I = 0)
V
Vdc
(BR)CES
BCX19
BCX18
50
30
−
−
−
−
C
C
Collector Cutoff Current
(V = 20 Vdc, I = 0)
I
CBO
−
−
−
−
100
5.0
nAdc
mAdc
CB
E
(V = 20 Vdc, I = 0, T = 150°C)
CB
E
A
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
I
−
−
10
mAdc
EBO
EB
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 100 mAdc, V = 1.0 Vdc)
100
70
40
−
−
−
600
−
−
C
CE
(I = 300 mAdc, V = 1.0 Vdc)
C
CE
(I = 500 mAdc, V = 1.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = 500 mAdc, I = 50 mAdc)
V
−
−
−
0.62
1.2
Vdc
Vdc
CE(sat)
C
B
Base−Emitter On Voltage
(I = 500 mAdc, V = 1.0 Vdc)
V
BE(on)
−
C
CE
ORDERING INFORMATION
Device
†
Specific Marking
Package
Shipping
BCX18LT1G
SOT−23
3000 / Tape & Reel
3000 / Tape & Reel
T2
(Pb−Free)
BCX19LT1G
SOT−23
(Pb−Free)
U1
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
BCX18LT1G, PNP BCX19LT1G, NPN
1000
100
10
V
= 1 V
CE
T = 25°C
J
0.1
1.0
10
100
1000
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
1.0
0.8
0.6
0.4
1.0
T = 25°C
T = 25°C
A
J
V
@ I /I = 10
C B
BE(sat)
0.8
0.6
0.4
0.2
0
V
BE(on)
@ V = 1 V
CE
I
C
= 10 mA
100 mA 300 mA
500 mA
0.2
0
V
@ I /I = 10
C B
CE(sat)
0.01
0.1
1
I , BASE CURRENT (mA)
10
100
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
B
Figure 2. Saturation Region
Figure 3. “On” Voltages
100
+1
0
q
for V
CE(sat)
VC
C
ib
10
-1
-2
C
ob
q
for V
BE
VB
1
0.1
1
10
100
1000
1
10
100
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Temperature Coefficients
Figure 5. Capacitances
http://onsemi.com
3
BCX18LT1G, PNP BCX19LT1G, NPN
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
3
H
E
E
c
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
b
0.25
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
e
q
A
L
A1
L1
VIEW C
H
E
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
BCX18LT1/D
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