BCW33LT3 [ONSEMI]
NPN 双极晶体管;
ONSEMI 
BCW33LT1G
General Purpose Transistor
NPN Silicon
Features
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• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
MAXIMUM RATINGS
1
BASE
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Symbol
Value
32
Unit
Vdc
V
CEO
V
CBO
V
EBO
2
32
Vdc
EMITTER
5.0
Vdc
3
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
I
100
mAdc
C
1
Symbol
Max
Unit
2
Total Device Dissipation FR−5 Board
(Note 1)
P
D
SOT−23
(TO−236AB)
CASE 318
STYLE 6
T
A
= 25°C
225
1.8
mW
mW/°C
Derate above 25°C
Thermal Resistance,
R
556
°C/W
q
JA
Junction−to−Ambient
MARKING DIAGRAM
Total Device Dissipation
P
D
Alumina Substrate (Note 2),
T
= 25°C
300
2.4
mW
mW/°C
D3 M G
A
Derate above 25°C
G
Thermal Resistance,
R
417
°C/W
q
JA
Junction−to−Ambient
D3
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
Junction and Storage Temperature
T , T
−55 to +150
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
ORDERING INFORMATION
†
Device
Package
Shipping
BCW33LT1G
SOT−23
3000/Tape & Reel
(Pb−Free)
BCW33LT3G
SOT−23
10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2009 − Rev. 4
BCW33LT1/D
BCW33LT1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
V
32
32
−
−
−
Vdc
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 2.0 mAdc, I = 0)
C
B
Collector−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
V
C
B
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
5.0
E
C
Collector Cutoff Current
(V = 32 Vdc, I = 0)
I
CBO
−
−
100
10
nAdc
mAdc
CB
E
(V = 32 Vdc, I = 0, T = 100°C)
CB
E
A
ON CHARACTERISTICS
DC Current Gain
hFE
−
(I = 2.0 mAdc, V = 5.0 Vdc)
420
−
800
0.25
0.70
C
CE
Collector−Emitter Saturation Voltage
(I = 10 mAdc, I = 0.5 mAdc)
V
Vdc
Vdc
CE(sat)
C
B
Base−Emitter On Voltage
(I = 2.0 mAdc, V = 5.0 Vdc)
V
BE(on)
0.55
C
CE
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
C
−
−
4.0
10
pF
dB
obo
(V = 10 Vdc, I = 0, f = 1.0 MHz)
CB
E
Noise Figure
NF
(V = 5.0 Vdc, I = 0.2 mAdc, R = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
CE
C
S
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+ꢀ3.0 V
+ꢀ3.0 V
t
1
10 < t < 500 ms
1
DUTY CYCLE = 2%
300 ns
+10.9 V
<1.0 ns
275
275
+10.9 V
DUTY CYCLE = 2%
10 k
10 k
0
-ꢀ0.5 V
<1.0 ns
C
< 4.0 pF*
C < 4.0 pF*
S
S
-ꢀ9.1 V
1N916
*Total shunt capacitance of test jig and connectors
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
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2
BCW33LT1G
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
20
10
100
I
C
= 1.0 mA
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
50
I
C
= 1.0 mA
R ≈ ∞
S
R
= 0
S
20
300 mA
300 mA
100 mA
10
5.0
7.0
5.0
100 mA
2.0
1.0
10 mA
0.5
0.2
0.1
30 mA
30 mA
3.0
2.0
10 mA
10 20
50 100 200
500 1ꢁk
2ꢁk
5ꢁk 10ꢁk
10
20
50 100 200
500 1ꢁk
2ꢁk
5ꢁk 10ꢁk
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 3. Noise Voltage
Figure 4. Noise Current
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
500ꢁk
1ꢁM
500ꢁk
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
200ꢁk
100ꢁk
50ꢁk
200ꢁk
100ꢁk
50ꢁk
20ꢁk
20ꢁk
10ꢁk
10ꢁk
5ꢁk
2.0 dB
1.0 dB
5ꢁk
2ꢁk
1ꢁk
3.0 dB
4.0 dB
2.0 dB
2ꢁk
1ꢁk
3.0 dB
5.0 dB
8.0 dB
6.0 dB
10 dB
500
500
200
100
50
200
100
10
20 30
50 70 100
200 300
500 700 1ꢁk
10
20 30
50 70 100
200 300
500 700 1ꢁk
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Narrow Band, 100 Hz
Figure 6. Narrow Band, 1.0 kHz
500ꢁk
10 Hz to 15.7 kHz
200ꢁk
100ꢁk
50ꢁk
Noise Figure is defined as:
2
20ꢁk
2
R
n S
2
1ń2
e
n
) 4KTR ) I
S
10 ǒ
Ǔ
NF + 20 log
10ꢁk
5ꢁk
4KTR
S
1.0 dB
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
2ꢁk
1ꢁk
2.0 dB
I
n
= Noise Current of the Transistor referred to the input. (Figure 4)
−23
3.0 dB
K
T
R
= Boltzman’s Constant (1.38 x 10
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
j/°K)
500
5.0 dB
8.0 dB
S
200
100
50
20 30
50 70 100
200 300
500 700 1ꢁk
10
I , COLLECTOR CURRENT (mA)
C
Figure 7. Wideband
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3
BCW33LT1G
TYPICAL STATIC CHARACTERISTICS
1.0
0.8
0.6
0.4
0.2
0
100
T = 25°C
PULSE WIDTH = 300 ms
DUTY CYCLE ≤ 2.0%
A
BCW33LT1
I
B
= 500 mA
400 mA
T = 25°C
J
80
60
300 mA
200 mA
I
C
= 1.0 mA
10 mA
50 mA
100 mA
40
20
0
100 mA
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
5.0 10 20
0
5.0
10
15
20
25
30
35
40
I , BASE CURRENT (mA)
B
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Collector Saturation Region
Figure 9. Collector Characteristics
1.4
1.2
1.6
0.8
0
*APPLIES for I /I ≤ h /2
C
B
FE
T = 25°C
J
25°C to 125°C
-55°C to 25°C
1.0
0.8
0.6
0.4
*q for V
VC
CE(sat)
V
@ I /I = 10
C B
BE(sat)
-ꢀ0.8
-ꢀ1.6
-ꢀ2.4
V
BE(on)
@ V = 1.0 V
CE
25°C to 125°C
-55°C to 25°C
0.2
0
q
for V
BE
VB
V
@ I /I = 10
C B
CE(sat)
0.1 0.2
0.5 1.0
2.0
5.0
10
20
50 100
0.1
0.2
0.5
1.0 2.0
5.0 10 20
50 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
300
200
1000
V
= 3.0 V
CC
I /I = 10
700
500
C
B
t
s
T = 25°C
J
100
70
300
200
50
t
r
100
70
30
20
t
f
50
t @ V
d
= 0.5 Vdc
BE(off)
V
= 3.0 V
10
CC
I /I = 10
30
20
C
B
= I
7.0
5.0
I
B1 B2
T = 25°C
J
3.0
10
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 12. Turn−On Time
Figure 13. Turn−Off Time
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4
BCW33LT1G
TYPICAL DYNAMIC CHARACTERISTICS
500
10
7.0
5.0
T = 25°C
J
f = 1.0 MHz
T = 25°C
J
f = 100 MHz
300
200
C
ib
V
CE
= 20 V
5.0 V
C
ob
3.0
2.0
100
70
50
1.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 14. Current−Gain — Bandwidth Product
Figure 15. Capacitance
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
0.02
0.1
0.07
0.05
FIGURE 19A
DUTY CYCLE, D = t /t
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
1
2
P
(pk)
0.03
0.02
t
1
READ TIME AT t (SEE AN−569)
1
0.01
Z
T
= r(t) ꢀ R
− T = P
q
q
JA(t)
J(pk)
JA
Z
SINGLE PULSE
t
2
q
A
(pk)
JA(t)
0.01
0.01 0.02
0.05 0.1 0.2
0.5 1.0 2.0
5.0
10 20
50 100 200
500 1.0ꢁk 2.0ꢁk 5.0ꢁk 10ꢁk 20ꢁk
100ꢁk
50ꢁk
t, TIME (ms)
Figure 16. Thermal Response
4
3
10
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
V
CC
= 30 Vdc
A train of periodical power pulses can be represented by the model
as shown in Figure 16A. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 16 was calculated for various duty cycles.
10
10
2
I
CEO
To find Z
, multiply the value obtained from Figure 16 by the
JA(t)
q
steady state value R
.
1
0
q
JA
10
Example:
I
The MPS3904 is dissipating 2.0 watts peak under the following
conditions:
CBO
AND
10
I
@ V
= 3.0 Vdc
t = 1.0 ms, t = 5.0 ms. (D = 0.2)
1 2
CEX
BE(off)
-1
10
10
Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
-2
The peak rise in junction temperature is therefore
-4 -2
0
+20 +40 +60 +80 +100 +120 +140 +160
DT = r(t) x P
x R
= 0.22 x 2.0 x 200 = 88°C.
q
(pk)
JA
0
0
T , JUNCTION TEMPERATURE (°C)
J
For more information, see AN−569.
Figure 16A.
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5
BCW33LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
3
H
E
E
c
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
b
0.25
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
e
q
A
L
L1
A1
L1
VIEW C
H
E
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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BCW33LT1/D
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