BC848BLT3 [ONSEMI]
General Purpose Transistors(NPN Silicon); 通用晶体管( NPN硅)型号: | BC848BLT3 |
厂家: | ONSEMI |
描述: | General Purpose Transistors(NPN Silicon) |
文件: | 总6页 (文件大小:96K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BC846ALT1 Series
BC846, BC847 and BC848 are Preferred Devices
General Purpose
Transistors
NPN Silicon
Features
http://onsemi.com
• Pb−Free Packages are Available
• Moisture Sensitivity Level: 1
COLLECTOR
3
• ESD Rating − Human Body Model: >4000 V
ESD Rating − Machine Model: >400 V
1
BASE
MAXIMUM RATINGS
2
Rating
Symbol
Value
Unit
EMITTER
Collector-Emitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
BC846
65
45
30
BC847, BC850
BC848, BC849
3
Collector−Base Voltage
Vdc
Vdc
BC846
BC847, BC850
BC848, BC849
80
50
30
1
2
Emitter−Base Voltage
SOT−23
BC846
BC847, BC850
BC848, BC849
6.0
6.0
5.0
CASE 318
STYLE 6
Collector Current − Continuous
I
C
100
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
MARKING DIAGRAM
xxD
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
(Note 1)
P
D
225
mW
xx
D
= Specific Device Code
= Date Code
T = 25°C
A
Derate above 25°C
1.8
mW/°C
°C/W
Thermal Resistance,
R
556
q
JA
ORDERING INFORMATION
See detailed ordering and shipping information in the package
Junction−to−Ambient (Note 1)
dimensions section on page 5 of this data sheet.
Total Device Dissipation
P
D
300
mW
Alumina Substrate (Note 2)
T = 25°C
A
Preferred devices are recommended choices for future use
Derate above 25°C
2.4
mW/°C
°C/W
and best overall value.
Thermal Resistance,
R
417
q
JA
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
T , T
−55 to
+150
°C
J
stg
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in 99.5% alumina.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
June, 2004 − Rev. 6
BC846ALT1/D
BC846ALT1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage BC846A,B
V
65
45
30
−
−
−
−
−
−
V
(BR)CEO
(I = 10 mA)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
C
Collector−Emitter Breakdown Voltage BC846A,B
V
80
50
30
−
−
−
−
−
−
V
V
V
(BR)CES
(BR)CBO
(BR)EBO
(I = 10 mA, V = 0)
BC847A,B,C BC850B,C
BC848A,B,C, BC849B,C
C
EB
Collector−Base Breakdown Voltage
BC846A,B
V
V
80
50
30
−
−
−
−
−
−
(I = 10 mA)
C
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
Emitter−Base Breakdown Voltage
BC846A,B
6.0
6.0
5.0
−
−
−
−
−
−
(I = 1.0 mA)
E
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
Collector Cutoff Current (V = 30 V)
I
−
−
−
−
15
5.0
nA
mA
CB
CBO
(V = 30 V, T = 150°C)
CB
A
ON CHARACTERISTICS
DC Current Gain
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
h
FE
−
−
−
90
150
270
−
−
−
−
(I = 10 mA, V = 5.0 V)
C
CE
(I = 2.0 mA, V = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B,
BC849B, BC850B
110
200
180
290
220
450
C
CE
BC847C, BC848C, BC849C, BC850C
420
520
800
Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA)
V
−
−
−
−
0.25
0.6
V
V
C
B
CE(sat)
Collector−Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA)
C
B
Base−Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA)
V
−
−
0.7
0.9
−
−
C
B
BE(sat)
Base−Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA)
C
B
Base−Emitter Voltage (I = 2.0 mA, V = 5.0 V)
V
BE(on)
580
−
660
−
700
770
mV
C
CE
Base−Emitter Voltage (I = 10 mA, V = 5.0 V)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
100
−
−
−
−
MHz
T
(I = 10 mA, V = 5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance (V = 10 V, f = 1.0 MHz)
C
4.5
pF
dB
CB
obo
Noise Figure (I = 0.2 mA,
NF
C
V
= 5.0 Vdc, R = 2.0 kW,
BC846A,B, BC847A,B,C, BC848A,B,C
BC849B,C, BC850B,C
−
−
−
−
10
4.0
CE
S
f = 1.0 kHz, BW = 200 Hz)
http://onsemi.com
2
BC846ALT1 Series
BC847, BC848, BC849, BC850
2.0
1.5
1.0
V
= 10 V
T = 25°C
A
0.9
0.8
0.7
CE
T = 25°C
A
V
@ I /I = 10
C B
BE(sat)
1.0
0.8
V
BE(on)
@ V = 10 V
CE
0.6
0.5
0.4
0.3
0.6
0.4
0.3
0.2
0.1
V
@ I /I = 10
C B
CE(sat)
0.2
0
0.1
0.2
0.5 1.0
2.0
5.0 10
20
50 100 200
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
2.0
1.6
1.2
0.8
0.4
0
1.0
1.2
1.6
2.0
2.4
2.8
T = 25°C
−55°C to +125°C
A
I
C
= 200 mA
I
=
I
=
I
C
= 50 mA
I = 100 mA
C
C
C
10 mA 20 mA
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
5.0
400
300
T = 25°C
A
200
C
ib
V
= 10 V
CE
T = 25°C
100
80
3.0
2.0
A
C
ob
60
40
30
1.0
20
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
http://onsemi.com
3
BC846ALT1 Series
BC846
1.0
T = 25°C
A
V
= 5 V
CE
T = 25°C
0.8
A
V
@ I /I = 10
C B
BE(sat)
2.0
1.0
0.5
0.6
0.4
0.2
0
V
@ V = 5.0 V
CE
BE
0.2
V
@ I /I = 10
C B
CE(sat)
0.1 0.2
1.0
10
100
0.2
0.5 1.0 2.0
5.0
10 20
50 100 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. DC Current Gain
Figure 8. “On” Voltage
2.0
1.6
1.2
0.8
0.4
0
−1.0
−1.4
−1.8
−2.2
−2.6
−3.0
T = 25°C
A
100 mA
200 mA
20 mA
50 mA
q
for V
BE
VB
−55°C to 125°C
I
=
C
10 mA
0.02 0.05 0.1 0.2
0.5
1.0 2.0
5.0 10
20
0.2
0.5 1.0 2.0
5.0
10 20
50
100 200
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 9. Collector Saturation Region
Figure 10. Base−Emitter Temperature Coefficient
40
T = 25°C
A
V
= 5 V
CE
T = 25°C
500
A
20
10
C
ib
200
100
50
6.0
4.0
C
ob
20
2.0
0.1 0.2
0.5
1.0 2.0
5.0
10 20
50
100
1.0
5.0 10
50 100
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
http://onsemi.com
4
BC846ALT1 Series
ORDERING INFORMATION
Device
†
Marking
Package
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
Shipping
BC846ALT1
1A
1A
1B
1B
1E
1E
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
BC846ALT3
BC846BLT1
BC846BLT3
BC847ALT1
3,000 / Tape & Reel
3,000 / Tape & Reel
BC847ALT1G
SOT−23
(Pb−Free)
BC847BLT1
BC847CLT1
BC847CLT1G
1F
1G
1G
SOT−23
SOT−23
3,000 / Tape & Reel
10,000 / Tape & Reel
SOT−23
(Pb−Free)
BC847CLT3
1G
1G
SOT−23
BC847CLT3G
SOT−23
(Pb−Free)
BC848ALT1
1J
1J
SOT−23
3,000 / Tape & Reel
3,000 / Tape & Reel
BC848ALT1G
SOT−23
(Pb−Free)
BC848BLT1
BC848BLT3
BC848CLT1
BC848CLT1G
1K
1K
1L
1L
SOT−23
SOT−23
SOT−23
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
SOT−23
(Pb−Free)
BC849BLT1
BC849BLT3
BC849CLT1
BC849CLT1G
2B
2B
2C
2C
SOT−23
SOT−23
SOT−23
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
SOT−23
(Pb−Free)
3,000 / Tape & Reel
3,000 / Tape & Reel
BC850BLT1
BC850CLT1
BC850CLT1G
2F
2G
2G
SOT−23
SOT−23
3,000 / Tape & Reel
SOT−23
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
http://onsemi.com
5
BC846ALT1 Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−09
ISSUE AI
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
L
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09.
3
B
S
1
2
INCHES
MILLIMETERS
DIM
A
B
C
D
G
H
J
MIN
0.1102
MAX
0.1197
MIN
2.80
1.20
0.99
0.36
1.70
0.10
0.085
0.45
0.89
2.10
0.45
MAX
3.04
1.40
1.26
0.50
2.10
0.25
0.177
0.60
1.02
2.50
0.60
0.0472 0.0551
0.0385 0.0498
0.0140 0.0200
0.0670 0.0826
0.0040 0.0098
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
V
G
C
K
L
S
J
V
H
K
D
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
BC846ALT1/D
相关型号:
BC848BR
TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BC848BR-TAPE-13
TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BC848BR-TAPE-7
TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
©2020 ICPDF网 联系我们和版权申明