BC848BLT3 [ONSEMI]

General Purpose Transistors(NPN Silicon); 通用晶体管( NPN硅)
BC848BLT3
型号: BC848BLT3
厂家: ONSEMI    ONSEMI
描述:

General Purpose Transistors(NPN Silicon)
通用晶体管( NPN硅)

晶体 小信号双极晶体管 光电二极管
文件: 总6页 (文件大小:96K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BC846ALT1 Series  
BC846, BC847 and BC848 are Preferred Devices  
General Purpose  
Transistors  
NPN Silicon  
Features  
http://onsemi.com  
Pb−Free Packages are Available  
Moisture Sensitivity Level: 1  
COLLECTOR  
3
ESD Rating − Human Body Model: >4000 V  
ESD Rating − Machine Model: >400 V  
1
BASE  
MAXIMUM RATINGS  
2
Rating  
Symbol  
Value  
Unit  
EMITTER  
Collector-Emitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
BC846  
65  
45  
30  
BC847, BC850  
BC848, BC849  
3
Collector−Base Voltage  
Vdc  
Vdc  
BC846  
BC847, BC850  
BC848, BC849  
80  
50  
30  
1
2
Emitter−Base Voltage  
SOT−23  
BC846  
BC847, BC850  
BC848, BC849  
6.0  
6.0  
5.0  
CASE 318  
STYLE 6  
Collector Current − Continuous  
I
C
100  
mAdc  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
MARKING DIAGRAM  
xxD  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board,  
(Note 1)  
P
D
225  
mW  
xx  
D
= Specific Device Code  
= Date Code  
T = 25°C  
A
Derate above 25°C  
1.8  
mW/°C  
°C/W  
Thermal Resistance,  
R
556  
q
JA  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
Junction−to−Ambient (Note 1)  
dimensions section on page 5 of this data sheet.  
Total Device Dissipation  
P
D
300  
mW  
Alumina Substrate (Note 2)  
T = 25°C  
A
Preferred devices are recommended choices for future use  
Derate above 25°C  
2.4  
mW/°C  
°C/W  
and best overall value.  
Thermal Resistance,  
R
417  
q
JA  
Junction−to−Ambient (Note 2)  
Junction and Storage  
Temperature Range  
T , T  
55 to  
+150  
°C  
J
stg  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
June, 2004 − Rev. 6  
BC846ALT1/D  
 
BC846ALT1 Series  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage BC846A,B  
V
65  
45  
30  
V
(BR)CEO  
(I = 10 mA)  
BC847A,B,C, BC850B,C  
BC848A,B,C, BC849B,C  
C
CollectorEmitter Breakdown Voltage BC846A,B  
V
80  
50  
30  
V
V
V
(BR)CES  
(BR)CBO  
(BR)EBO  
(I = 10 mA, V = 0)  
BC847A,B,C BC850B,C  
BC848A,B,C, BC849B,C  
C
EB  
CollectorBase Breakdown Voltage  
BC846A,B  
V
V
80  
50  
30  
(I = 10 mA)  
C
BC847A,B,C, BC850B,C  
BC848A,B,C, BC849B,C  
EmitterBase Breakdown Voltage  
BC846A,B  
6.0  
6.0  
5.0  
(I = 1.0 mA)  
E
BC847A,B,C, BC850B,C  
BC848A,B,C, BC849B,C  
Collector Cutoff Current (V = 30 V)  
I
15  
5.0  
nA  
mA  
CB  
CBO  
(V = 30 V, T = 150°C)  
CB  
A
ON CHARACTERISTICS  
DC Current Gain  
BC846A, BC847A, BC848A  
BC846B, BC847B, BC848B  
BC847C, BC848C  
h
FE  
90  
150  
270  
(I = 10 mA, V = 5.0 V)  
C
CE  
(I = 2.0 mA, V = 5.0 V)  
BC846A, BC847A, BC848A  
BC846B, BC847B, BC848B,  
BC849B, BC850B  
110  
200  
180  
290  
220  
450  
C
CE  
BC847C, BC848C, BC849C, BC850C  
420  
520  
800  
CollectorEmitter Saturation Voltage (I = 10 mA, I = 0.5 mA)  
V
0.25  
0.6  
V
V
C
B
CE(sat)  
CollectorEmitter Saturation Voltage (I = 100 mA, I = 5.0 mA)  
C
B
BaseEmitter Saturation Voltage (I = 10 mA, I = 0.5 mA)  
V
0.7  
0.9  
C
B
BE(sat)  
BaseEmitter Saturation Voltage (I = 100 mA, I = 5.0 mA)  
C
B
BaseEmitter Voltage (I = 2.0 mA, V = 5.0 V)  
V
BE(on)  
580  
660  
700  
770  
mV  
C
CE  
BaseEmitter Voltage (I = 10 mA, V = 5.0 V)  
C
CE  
SMALL−SIGNAL CHARACTERISTICS  
CurrentGain − Bandwidth Product  
f
100  
MHz  
T
(I = 10 mA, V = 5.0 Vdc, f = 100 MHz)  
C
CE  
Output Capacitance (V = 10 V, f = 1.0 MHz)  
C
4.5  
pF  
dB  
CB  
obo  
Noise Figure (I = 0.2 mA,  
NF  
C
V
= 5.0 Vdc, R = 2.0 kW,  
BC846A,B, BC847A,B,C, BC848A,B,C  
BC849B,C, BC850B,C  
10  
4.0  
CE  
S
f = 1.0 kHz, BW = 200 Hz)  
http://onsemi.com  
2
BC846ALT1 Series  
BC847, BC848, BC849, BC850  
2.0  
1.5  
1.0  
V
= 10 V  
T = 25°C  
A
0.9  
0.8  
0.7  
CE  
T = 25°C  
A
V
@ I /I = 10  
C B  
BE(sat)  
1.0  
0.8  
V
BE(on)  
@ V = 10 V  
CE  
0.6  
0.5  
0.4  
0.3  
0.6  
0.4  
0.3  
0.2  
0.1  
V
@ I /I = 10  
C B  
CE(sat)  
0.2  
0
0.1  
0.2  
0.5 1.0  
2.0  
5.0 10  
20  
50 100 200  
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100  
I , COLLECTOR CURRENT (mAdc)  
C
I , COLLECTOR CURRENT (mAdc)  
C
Figure 1. Normalized DC Current Gain  
Figure 2. “Saturation” and “On” Voltages  
2.0  
1.6  
1.2  
0.8  
0.4  
0
1.0  
1.2  
1.6  
2.0  
2.4  
2.8  
T = 25°C  
−55°C to +125°C  
A
I
C
= 200 mA  
I
=
I
=
I
C
= 50 mA  
I = 100 mA  
C
C
C
10 mA 20 mA  
0.02  
0.1  
1.0  
10 20  
0.2  
1.0  
10  
100  
I , BASE CURRENT (mA)  
B
I , COLLECTOR CURRENT (mA)  
C
Figure 3. Collector Saturation Region  
Figure 4. Base−Emitter Temperature Coefficient  
10  
7.0  
5.0  
400  
300  
T = 25°C  
A
200  
C
ib  
V
= 10 V  
CE  
T = 25°C  
100  
80  
3.0  
2.0  
A
C
ob  
60  
40  
30  
1.0  
20  
0.4 0.6 0.8 1.0  
2.0  
4.0 6.0 8.0 10  
20  
40  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50  
V , REVERSE VOLTAGE (VOLTS)  
R
I , COLLECTOR CURRENT (mAdc)  
C
Figure 5. Capacitances  
Figure 6. Current−Gain − Bandwidth Product  
http://onsemi.com  
3
BC846ALT1 Series  
BC846  
1.0  
T = 25°C  
A
V
= 5 V  
CE  
T = 25°C  
0.8  
A
V
@ I /I = 10  
C B  
BE(sat)  
2.0  
1.0  
0.5  
0.6  
0.4  
0.2  
0
V
@ V = 5.0 V  
CE  
BE  
0.2  
V
@ I /I = 10  
C B  
CE(sat)  
0.1 0.2  
1.0  
10  
100  
0.2  
0.5 1.0 2.0  
5.0  
10 20  
50 100 200  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 7. DC Current Gain  
Figure 8. “On” Voltage  
2.0  
1.6  
1.2  
0.8  
0.4  
0
−1.0  
−1.4  
−1.8  
−2.2  
−2.6  
−3.0  
T = 25°C  
A
100 mA  
200 mA  
20 mA  
50 mA  
q
for V  
BE  
VB  
−55°C to 125°C  
I
=
C
10 mA  
0.02 0.05 0.1 0.2  
0.5  
1.0 2.0  
5.0 10  
20  
0.2  
0.5 1.0 2.0  
5.0  
10 20  
50  
100 200  
I , BASE CURRENT (mA)  
B
I , COLLECTOR CURRENT (mA)  
C
Figure 9. Collector Saturation Region  
Figure 10. Base−Emitter Temperature Coefficient  
40  
T = 25°C  
A
V
= 5 V  
CE  
T = 25°C  
500  
A
20  
10  
C
ib  
200  
100  
50  
6.0  
4.0  
C
ob  
20  
2.0  
0.1 0.2  
0.5  
1.0 2.0  
5.0  
10 20  
50  
100  
1.0  
5.0 10  
50 100  
V , REVERSE VOLTAGE (VOLTS)  
R
I , COLLECTOR CURRENT (mA)  
C
Figure 11. Capacitance  
Figure 12. Current−Gain − Bandwidth Product  
http://onsemi.com  
4
BC846ALT1 Series  
ORDERING INFORMATION  
Device  
Marking  
Package  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
Shipping  
BC846ALT1  
1A  
1A  
1B  
1B  
1E  
1E  
3,000 / Tape & Reel  
10,000 / Tape & Reel  
3,000 / Tape & Reel  
10,000 / Tape & Reel  
BC846ALT3  
BC846BLT1  
BC846BLT3  
BC847ALT1  
3,000 / Tape & Reel  
3,000 / Tape & Reel  
BC847ALT1G  
SOT−23  
(Pb−Free)  
BC847BLT1  
BC847CLT1  
BC847CLT1G  
1F  
1G  
1G  
SOT−23  
SOT−23  
3,000 / Tape & Reel  
10,000 / Tape & Reel  
SOT−23  
(Pb−Free)  
BC847CLT3  
1G  
1G  
SOT−23  
BC847CLT3G  
SOT−23  
(Pb−Free)  
BC848ALT1  
1J  
1J  
SOT−23  
3,000 / Tape & Reel  
3,000 / Tape & Reel  
BC848ALT1G  
SOT−23  
(Pb−Free)  
BC848BLT1  
BC848BLT3  
BC848CLT1  
BC848CLT1G  
1K  
1K  
1L  
1L  
SOT−23  
SOT−23  
SOT−23  
3,000 / Tape & Reel  
10,000 / Tape & Reel  
3,000 / Tape & Reel  
SOT−23  
(Pb−Free)  
BC849BLT1  
BC849BLT3  
BC849CLT1  
BC849CLT1G  
2B  
2B  
2C  
2C  
SOT−23  
SOT−23  
SOT−23  
3,000 / Tape & Reel  
10,000 / Tape & Reel  
3,000 / Tape & Reel  
SOT−23  
(Pb−Free)  
3,000 / Tape & Reel  
3,000 / Tape & Reel  
BC850BLT1  
BC850CLT1  
BC850CLT1G  
2F  
2G  
2G  
SOT−23  
SOT−23  
3,000 / Tape & Reel  
SOT−23  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-  
cations Brochure, BRD8011/D.  
http://onsemi.com  
5
BC846ALT1 Series  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−09  
ISSUE AI  
NOTES:  
A
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
L
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH  
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09.  
3
B
S
1
2
INCHES  
MILLIMETERS  
DIM  
A
B
C
D
G
H
J
MIN  
0.1102  
MAX  
0.1197  
MIN  
2.80  
1.20  
0.99  
0.36  
1.70  
0.10  
0.085  
0.45  
0.89  
2.10  
0.45  
MAX  
3.04  
1.40  
1.26  
0.50  
2.10  
0.25  
0.177  
0.60  
1.02  
2.50  
0.60  
0.0472 0.0551  
0.0385 0.0498  
0.0140 0.0200  
0.0670 0.0826  
0.0040 0.0098  
0.0034 0.0070  
0.0180 0.0236  
0.0350 0.0401  
0.0830 0.0984  
0.0177 0.0236  
V
G
C
K
L
S
J
V
H
K
D
STYLE 6:  
PIN 1. BASE  
2. EMITTER  
3. COLLECTOR  
SOLDERING FOOTPRINT*  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
0.8  
0.031  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
BC846ALT1/D  

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