BC847S [ONSEMI]
NPN 多芯片通用放大器;
ONSEMI 
Is Now Part of
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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BC847S
E2
B2
C1
C2
SC70-6
Mark: 1C
B1
pin #1
E1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 200 mA. Sourced from Process 07.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCES
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
45
50
V
V
4
50
V
6.0
V
Collector Current - Continuous
200
mA
Operating and Storage Junction Temperature Range
-55 to +150
TJ, Tstg
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
BC847S
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
300
2.4
415
mW
mW/°C
°C/W
RθJA
2001 Fairchild Semiconductor Corporation
Rev.A1
NPN Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0
45
50
50
6.0
V
V
Collector-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
IC = 10 µA, IE = 0
V
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 30 V, IE = 0
V
15
nA
VCB = 30 V, IE = 0, TA = 150°C
5.0
µ
A
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 2.0 mA, VCE = 5.0 V
110
630
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5.0 mA
0.25
0.65
0.7
V
VCE(sat)
V
V
V
Base-Emitter ON Voltage
IC = 2.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V
0.58
VBE(on)
0.77
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
IC = 20 mA, VCE = 5.0,
f = 100 mHz
VCB = 10 V, f = 1.0 MHz
200
2.0
MHz
pF
fT
Output Capacitance
Cobo
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
1200
1000
800
600
400
200
0
0.3
0.25
0.2
VCE = 5.0 V
125 °C
β = 10
125 °C
0.15
0.1
25 °C
25 °C
- 40 °C
- 40 °C
0.05
0.01 0.03 0.1 0.3
1
3
10
30
100
0.1
1
10
100
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
1
- 40 °C
- 40 °C
0.8
0.8
25 °C
25 °C
0.6
0.6
125 °C
125 °C
0.4
0.4
β = 10
VCE = 5.0 V
0.2
0.2
0.1
1
10
100
0.1
1
10
40
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Input and Output Capacitance
vs Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
5
4
3
2
1
0
10
f = 1.0 MHz
VCB = 45V
C
te
1
4
C
ob
0.1
0
4
8
12
16
20
25
50
75
100
125
150
REVERSE BIAS VOLTAGE (V)
T - AMBIE NT TEMP ERATURE ( C)
°
A
Contours of Constant Gain
Bandwidth Product (fT )
Normalized Collector-Cutoff Current
vs Ambient Temperature
10
7
1000
100
10
175 MHz
5
150 MHz
3
2
125 MHz
100 MHz
75 MHz
1
1
0.1
1
10
100
25
50
75
100
125
150
I C - COLLECTOR CURRENT (mA)
TA - AMBIENT TEMPERATURE ( C)
°
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Noise Figure vs Frequency
Wideband Noise Frequency
vs Source Resistance
10
I
= 200 µA,
= 10 kΩ
C
5
R
VCE = 5.0 V
S
8
6
4
2
I
R
= 100 µA,
C
BANDWIDTH = 15.7 kHz
4
3
2
1
= 10 kΩ
S
I
= 100 µA
C
I
R
= 1.0 mA,
= 500 Ω
C
S
I
= 30 µA
C
I
R
= 1.0 mA,
= 5.0 kΩ
C
S
V
= 5.0V
CE
I
= 10 µA
C
0
0
1,000
2,000
5,000
10,000
20,000
50,000
100,000
0.0001 0.001
0.01
0.1
1
10
100
R
- SOURCE RESISTANCE (Ω )
f - FREQUENCY (MHz)
S
Power Dissipation vs
Ambient Temperature
500
400
SC70-6
300
200
100
0
0
25
50
75
100
125
150
TEMPERATURE (ºC)
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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