BC847AMTF [ONSEMI]
NPN Epitaxial Silicon Transistor;型号: | BC847AMTF |
厂家: | ONSEMI |
描述: | NPN Epitaxial Silicon Transistor |
文件: | 总7页 (文件大小:275K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
BC846 / BC847 / BC848 / BC850
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
3
• Suitable for Automatic Insertion in Thick and Thin-film Circuits
• Low Noise: BC850
2
• Complement to BC856, BC857, BC858, BC859, and BC860
SOT-23
1
1. Base 2. Emitter 3. Collector
Ordering Information(1)
Part Number
BC846AMTF
BC846BMTF
BC846CMTF
BC847AMTF
BC847BMTF
BC847CMTF
BC848BMTF
BC848CMTF
BC850AMTF
BC850CMTF
Marking
8AA
Package
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
Packing Method
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
8AB
8AC
8BA
8BB
8BC
8CB
8CC
8EA
8EC
Note:
1. Affix “-A,-B,-C” means hFE classification. Affix “-M” means SOT-23 package. Affix “-TF” means the tape and reel type
packing.
Publication Order Number:
BC846/D
© 2002 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
1
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
BC846
80
VCBO
Collector-Base Voltage
BC847 / BC850
BC848
50
V
30
BC846
65
VCEO
Collector-Emitter Voltage
Emitter-Base Voltage
BC847 / BC850
BC848
45
V
V
30
BC846 / BC847
BC848 / BC850
6
VEBO
5
100
IC
TJ
Collector Current (DC)
Junction Temperature
mA
°C
150
TSTG
Storage Temperature Range
-65 to +150
°C
Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Value
310
Unit
mW
Power Dissipation
Derate Above 25°C
2.48
403
mW/°C
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
www.onsemi.com
2
Electrical Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
ICBO
Parameter
Collector Cut-Off Current
DC Current Gain
Conditions
VCB = 30 V, IE = 0
Min.
Typ.
Max.
15
Unit
nA
hFE
VCE = 5 V, IC = 2 mA
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCE = 5 V, IC = 2 mA
110
800
250
600
90
Collector-Emitter Saturation
Voltage
VCE(sat)
mV
mV
200
700
900
660
VBE(sat) Collector-Base Saturation Voltage
580
700
720
VBE(on) Base-Emitter On Voltage
mV
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 10 mA,
f = 100 MHz
fT
Current Gain Bandwidth Product
300
MHz
Cob
Cib
Output Capacitance
Input Capacitance
VCB = 10 V, IE = 0, f = 1 MHz
VEB = 0.5 V, IC = 0, f = 1 MHz
3.5
9
6.0
pF
pF
BC846 / BC847 / BC848
2.0
1.2
10.0
4.0
V
CE = 5 V, IC = 200 μA,
RG = 2 kΩ, f = 1 kHz
Noise
Figure
BC850
NF
dB
V
CE = 5 V, IC = 200 μA,
BC850
1.4
3.0
RG = 2 kΩ, f = 30 to 15000 Hz
Note:
3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%
hFE Classification
Classification
A
B
C
hFE
110 ~ 220
200 ~ 450
420 ~ 800
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3
Typical Performance Characteristics
1000
100
10
100
VCE = 5V
TA = 150 o
C
IB = 400μA
IB = 350μA
80
IB = 300μA
TA = 25 o
C
IB = 250μA
60
IB = 200μA
TA = -55 o
C
IB = 150μA
40
IB = 100μA
20
IB = 50μA
0
0.1
1
10
100
1000
0
4
8
12
16
20
IC [mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC Current Gain
1
10
IC = 10IB
IC = 20IB
1
0.1
TA = 150oC
TA = 25oC
0.1
TA = 150oC
A = -55oC
TA = 25oC
T
TA = -55oC
0.01
0.1
0.01
0.1
1
10
100
1000
1
10
100
1000
IC [mA], COLLECTOR CURRENT
IC [mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
1.2
1.2
IC = 10IB
IC = 20IB
1.0
0.8
1.0
0.8
A = -55oC
T
A = -55oC
T
TA = 25oC
TA = 25oC
0.6
0.4
0.2
0.6
0.4
0.2
TA = 150oC
TA = 150oC
0.1
1
10
100
1000
0.1
1
10
100
1000
IC [mA], COLLECTOR CURRENT
IC [mA], COLLECTOR CURRENT
Figure 5. Base-Emitter Saturation Voltage
Figure 6. Base-Emitter Saturation Voltage
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4
Typical Performance Characteristics (Continued)
100
10
1
VCE = 5V
100
10
1
f=1MHz
TA = 150oC
TA = 25oC
TA = -55oC
0.1
0.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
VBE(ON) [V], BASE-EMITTER ON VOLTAGE
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 7. Base-Emitter On Voltage
Figure 8. Collector Output Capacitance
1000
100
10
VCE=5V
1
0.1
1
10
100
IC[mA], COLLECTOR CURRENT
Figure 9. Current Gain Bandwidth Product
www.onsemi.com
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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