BC638 [ONSEMI]
High Current Transistors; 高电流晶体管
| 型号： | BC638 |
| 厂家： | 
ONSEMI |
| 描述： | High Current Transistors |
| 文件： | 总4页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC636, BC636-16, BC638,
BC640, BC640-16
High Current Transistors
PNP Silicon
http://onsemi.com
COLLECTOR
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
3
Collector-Emitter Voltage
V
V
V
Vdc
CEO
CBO
EBO
BASE
BC636
BC638
BC640
–45
–60
–80
1
Collector-Base Voltage
Emitter-Base Voltage
Vdc
EMITTER
BC636
BC638
BC640
–45
–60
–80
–5.0
–0.5
Vdc
Adc
Collector Current — Continuous
I
C
Total Device Dissipation
P
D
D
@ T = 25°C
625
5.0
mW
mW/°C
A
Derate above 25°C
1
Total Device Dissipation
P
2
3
@ T = 25°C
1.5
12
Watts
mW/°C
C
Derate above 25°C
CASE 29
TO–92
STYLE 14
Operating and Storage Junction
Temperature Range
T , T
–55 to
+150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
R
200
°C/W
θJA
ORDERING INFORMATION
Thermal Resistance,
Junction to Case
R
83.3
°C/W
θJC
Device
Package
TO–92
TO–92
TO–92
TO–92
TO–92
TO–92
TO–92
TO–92
Shipping
BC636
5000 Units/Box
2000/Ammo Pack
2000/Ammo Pack
5000 Units/Box
2000/Ammo Pack
5000 Units/Box
2000/Ammo Pack
5000 Units/Box
BC636ZL1
BC636–16ZL1
BC638
BC638ZL1
BC640
BC640ZL1
BC640–16
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
June, 2000 – Rev. 1
BC636/D
BC636, BC636–16, BC638, BC640, BC640–16
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = –10 mAdc, I = 0)
V
Vdc
(BR)CEO
BC636
BC638
BC640
–45
–60
–80
—
—
—
—
—
—
C
B
Collector–Base Breakdown Voltage
(I = –100 µAdc, I = 0)
V
Vdc
Vdc
(BR)CBO
BC636
BC638
BC640
–45
–60
–80
—
—
—
—
—
—
C
E
Emitter–Base Breakdown Voltage
(I = –10 mAdc, I = 0)
V
–5.0
—
—
(BR)EBO
E
C
Collector Cutoff Current
I
CBO
(V
CB
(V
CB
= –30 Vdc, I = 0)
—
—
—
—
–100
–10
nAdc
µAdc
E
= –30 Vdc, I = 0, T = 125°C)
E
A
(1)
ON CHARACTERISTICS
DC Current Gain
h
FE
—
(I = –5.0 mAdc, V
= –2.0 Vdc)
= –2.0 Vdc)
CE
25
40
100
40
40
100
25
—
—
—
—
—
—
—
—
C
CE
(I = –150 mAdc, V
BC636
BC636–16
BC638
BC640
BC640–16
250
250
160
160
250
—
C
(I = –500 mA, V
C CE
= –2.0 V)
Collector–Emitter Saturation Voltage
(I = –500 mAdc, I = –50 mAdc)
V
—
—
–0.25
–0.5
–0.5
—
Vdc
Vdc
CE(sat)
C
B
Base–Emitter On Voltage
(I = –500 mAdc, V
V
—
—
–1.0
BE(on)
= –2.0 Vdc)
CE
C
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
f
—
—
—
150
9.0
—
—
—
MHz
pF
T
(I = –50 mAdc, V
C
= –2.0 Vdc, f = 100 MHz)
CE
Output Capacitance
C
ob
(V
CB
= –10 Vdc, I = 0, f = 1.0 MHz)
E
Input Capacitance
(V = –0.5 Vdc, I = 0, f = 1.0 MHz)
C
110
pF
ib
EB
C
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.
http://onsemi.com
2
BC636, BC636–16, BC638, BC640, BC640–16
500
-1000
-500
V
CE
= -2 V
SOA = 1S
-B
-200
-100
P
D
T 25°C
A
200
100
50
-A
-L
-50
P
D
T
C
25°C
-20
-10
-5
BC636
BC638
BC640
P
P
T
25°C
25°C
D
D
A
-2
-1
T
C
20
-1
-2 -3 -4 -5 -7 -10
-20 -30-40 -50 -70 -100
-1
-3 -5 -10
-30 -50 -100
-300 -500 -1000
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
I , COLLECTOR CURRENT (mA)
C
Figure 1. Active Region Safe Operating Area
Figure 2. DC Current Gain
500
300
-1
-0.8
-0.6
V
@ I /I = 10
C B
BE(sat)
V
@ V = -2 V
CE
BE(on)
V
CE
= -2 V
100
50
-0.4
-0.2
0
V
@ I /I = 10
C B
CE(sat)
20
-1
-10
-100
-1000
-1
-10
-100
-1000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. Current Gain Bandwidth Product
Figure 4. “Saturation” and “On” Voltages
-0.2
-1.0
V
= -2 VOLTS
CE
∆T = 0°C to +100°C
-1.6
-2.2
θ
for V
BE
V
-1
-3 -5 -10
-30 -50 -100
-300 -500 -1000
I , COLLECTOR CURRENT (mA)
C
Figure 5. Temperature Coefficients
http://onsemi.com
3
BC636, BC636–16, BC638, BC640, BC640–16
PACKAGE DIMENSIONS
TO–92
(TO–226)
CASE 29–11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
---
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
---
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
---
0.205
0.210
0.165
0.021
0.055
0.105
0.020
---
D
X X
G
J
H
V
K
L
---
---
C
N
P
R
V
0.105
0.100
---
2.66
2.54
---
SECTION X–X
0.115
0.135
2.93
3.43
1
N
---
---
N
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
BC636/D
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