BC557BZL1G [ONSEMI]
Amplifier Transistors PNP Silicon; 放大器晶体管PNP硅
| 型号： | BC557BZL1G |
| 厂家： | 
ONSEMI |
| 描述： | Amplifier Transistors PNP Silicon |
| 文件： | 总7页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC556B, BC557A, B, C,
BC558B, C
Amplifier Transistors
PNP Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available*
COLLECTOR
1
MAXIMUM RATINGS
2
BASE
Rating
Symbol
Value
Unit
Collector - Emitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
3
BC556
BC557
BC558
−65
−45
−30
EMITTER
Collector - Base Voltage
Emitter - Base Voltage
Vdc
BC556
BC557
BC558
−80
−50
−30
−5.0
Vdc
TO−92
CASE 29
STYLE 17
Collector Current − Continuous
Collector Current − Peak
I
−100
−200
mAdc
C
I
I
1
CM
2
3
Base Current − Peak
−200
mAdc
BM
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
625
5.0
mW
mW/°C
A
D
D
Total Device Dissipation @ T = 25°C
P
1.5
12
W
mW/°C
C
MARKING DIAGRAM
Derate above 25°C
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
BC
55xx
AYWW G
G
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
R
200
°C/W
q
JA
Thermal Resistance,
Junction−to−Case
R
83.3
°C/W
q
JC
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
BC55x = Device Code
x = 6, 7, or 8
A
= Assembly Location
Y
= Year
WW
G
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
September, 2005 − Rev. 2
BC556B/D
BC556B, BC557A, B, C, BC558B, C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I = −2.0 mAdc, I = 0)
V
V
(BR)CEO
(BR)CBO
(BR)EBO
BC556
BC557
BC558
−65
−45
−30
−
−
−
−
−
−
C
B
Collector−Base Breakdown Voltage
(I = −100 mAdc)
C
V
V
V
V
BC556
BC557
BC558
−80
−50
−30
−
−
−
−
−
−
Emitter−Base Breakdown Voltage
(I = −100 mAdc, I = 0)
BC556
BC557
BC558
−5.0
−5.0
−5.0
−
−
−
−
−
−
E
C
Collector−Emitter Leakage Current
I
CES
(V
(V
= −40 V)
= −20 V)
BC556
BC557
BC558
BC556
BC557
BC558
−
−
−
−
−
−
−2.0
−2.0
−2.0
−
−
−
−100
−100
−100
−4.0
−4.0
−4.0
nA
CES
CES
(V
CES
= −20 V, T = 125°C)
mA
A
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = −10 mAdc, V = −5.0 V)
A Series Device
B Series Devices
C Series Devices
BC557
A Series Device
B Series Devices
C Series Devices
A Series Device
B Series Devices
C Series Devices
−
−
−
120
120
180
420
−
90
−
−
−
800
220
460
800
−
C
CE
150
270
−
170
290
500
120
180
300
(I = −2.0 mAdc, V = −5.0 V)
C
CE
(I = −100 mAdc, V = −5.0 V)
C
CE
−
−
−
−
Collector−Emitter Saturation Voltage
(I = −10 mAdc, I = −0.5 mAdc)
V
V
CE(sat)
−
−
−
−0.075
−0.3
−0.25
−0.3
−0.6
−0.65
C
B
(I = −10 mAdc, I = see Note 1)
C
B
(I = −100 mAdc, I = −5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = −10 mAdc, I = −0.5 mAdc)
V
V
V
BE(sat)
−
−
−0.7
−1.0
−
−
C
B
(I = −100 mAdc, I = −5.0 mAdc)
C
B
Base−Emitter On Voltage
(I = −2.0 mAdc, V = −5.0 Vdc)
V
BE(on)
−0.55
−
−0.62
−0.7
−0.7
−0.82
C
CE
(I = −10 mAdc, V = −5.0 Vdc)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
T
MHz
(I = −10 mA, V = −5.0 V, f = 100 MHz)
BC556
BC557
BC558
−
−
−
280
320
360
−
−
−
C
CE
Output Capacitance
C
−
3.0
6.0
pF
dB
ob
(V = −10 V, I = 0, f = 1.0 MHz)
CB
C
Noise Figure
NF
(I = −0.2 mAdc, V = −5.0 V,
BC556
BC557
BC558
−
−
−
2.0
2.0
2.0
10
10
10
C
CE
R
= 2.0 kW, f = 1.0 kHz, Df = 200 Hz)
S
Small−Signal Current Gain
(I = −2.0 mAdc, V = 5.0 V, f = 1.0 kHz)
h
fe
−
BC557
A Series Device
B Series Devices
C Series Devices
125
125
240
450
−
−
−
−
900
260
500
900
C
CE
1. I = −10 mAdc on the constant base current characteristics, which yields the point I = −11 mAdc, V = −1.0 V.
C
C
CE
http://onsemi.com
2
BC556B, BC557A, B, C, BC558B, C
BC557/BC558
2.0
1.5
−1.0
T = 25°C
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
0
A
V
= −10 V
CE
T = 25°C
V
@ I /I = 10
C B
BE(sat)
A
1.0
0.7
0.5
V
BE(on)
@ V = −10 V
CE
0.3
0.2
V
@ I /I = 10
C B
CE(sat)
−0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100 −200
−0.1
−1.0
−10
−100
−50
−0.2
−0.5
−2.0
−5.0
−20
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
1.0
1.2
1.6
2.0
2.4
2.8
−2.0
−1.6
−1.2
−0.8
−0.4
0
−55°C to +125°C
T = 25°C
A
I
=
I
= −50 mA
I
C
= −200 mA
= −100 mA
C
−10 mA
C
I
C
I
= −20 mA
C
−0.02
−0.1
−1.0
−10 −20
−0.2
−1.0
−10
−100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
5.0
400
300
C
ib
T = 25°C
A
200
150
V
= −10 V
CE
T = 25°C
A
100
80
C
ob
3.0
2.0
60
40
30
1.0
−0.4
20
−0.5
−0.6 −1.0
−2.0
−4.0 −6.0
−10
−20 −30 −40
−1.0
−2.0 −3.0 −5.0
−10
−20 −30 −50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
http://onsemi.com
3
BC556B, BC557A, B, C, BC558B, C
BC556
−1.0
T = 25°C
J
V
= −5.0 V
CE
T = 25°C
−0.8
A
V
@ I /I = 10
C B
BE(sat)
2.0
1.0
0.5
−0.6
−0.4
−0.2
0
V
@ V = −5.0 V
CE
BE
0.2
V
@ I /I = 10
C B
CE(sat)
−0.1 −0.2
−1.0 −2.0
−10 −20
−100 −200
−50
−0.2 −0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100 −200
−5.0
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. DC Current Gain
Figure 8. “On” Voltage
−2.0
−1.6
−1.2
−0.8
−0.4
0
−1.0
−1.4
−1.8
−2.2
−2.6
−3.0
−100 mA −200 mA
I
=
−20 mA
−50 mA
C
−10 mA
q
for V
BE
VB
−55°C to 125°C
T = 25°C
J
−0.02 −0.05 −0.1 −0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−0.2 −0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100 −200
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 9. Collector Saturation Region
Figure 10. Base−Emitter Temperature Coefficient
40
20
V
CE
= −5.0 V
500
T = 25°C
J
C
ib
200
100
50
10
8.0
6.0
4.0
C
ob
20
2.0
−0.1 −0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100
−1.0
−10
−100
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
http://onsemi.com
4
BC556B, BC557A, B, C, BC558B, C
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
SINGLE PULSE
0.05
Z
q
(t) = (t) R
q
JC
JC
0.1
R
Z
= 83.3°C/W MAX
q
JC
0.1
0.07
0.05
P
(pk)
(t) = r(t) R
q
q
JA
JA
SINGLE PULSE
R
q
= 200°C/W MAX
JA
t
1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
2
0.03
0.02
READ TIME AT t
1
DUTY CYCLE, D = t /t
1 2
T
J(pk)
− T = P
R
q
JC
(t)
C
(pk)
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0ꢁk
2.0ꢁk
5.0ꢁk
10ꢁ
t, TIME (ms)
Figure 13. Thermal Response
−200
1 s
3 ms
−100
−50
The safe operating area curves indicate I −V
limits of the
C
CE
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
T = 25°C
J
T = 25°C
A
The data of Figure 14 is based upon T
= 150°C; T or T is
J(pk)
C A
BC558
BC557
BC556
variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T ≤ 150°C. T may be
J(pk)
J(pk)
−10
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power than can
be handled to values less than the limitations imposed by second
breakdown.
−5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−2.0
−1.0
−5.0
−10
−30 −45 −65 −100
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Active Region − Safe Operating Area
http://onsemi.com
5
BC556B, BC557A, B, C, BC558B, C
DEVICE ORDERING INFORMATION
†
Device
BC556B
Package
Shipping
TO−92
5000 Units / Bulk
5000 Units / Bulk
BC556BG
TO−92
(Pb−Free)
BC556BZL1
TO−92
2000 / Ammo Box
2000 / Ammo Box
BC556BZL1G
TO−92
(Pb−Free)
BC557AZL1
TO−92
2000 / Ammo Box
2000 / Ammo Box
BC557AZL1G
TO−92
(Pb−Free)
BC557B
TO−92
5000 Units / Bulk
5000 Units / Bulk
BC557BG
TO−92
(Pb−Free)
BC557BRL1
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
BC557BRL1G
TO−92
(Pb−Free)
BC557BZL1
TO−92
2000 / Ammo Box
2000 / Ammo Box
BC557BZL1G
TO−92
(Pb−Free)
BC557C
TO−92
5000 Units / Bulk
5000 Units / Bulk
BC557CG
TO−92
(Pb−Free)
BC557CZL1
TO−92
2000 / Ammo Box
2000 / Ammo Box
BC557CZL1G
TO−92
(Pb−Free)
BC558BRL
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
BC558BRLG
TO−92
(Pb−Free)
BC558BRL1
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
BC558BRL1G
TO−92
(Pb−Free)
BC558BZL1
TO−92
2000 / Ammo Box
2000 / Ammo Box
BC558BZL1G
TO−92
(Pb−Free)
BC558CZL1
TO−92
2000 / Ammo Box
2000 / Ammo Box
BC558CZL1G
TO−92
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
6
BC556B, BC557A, B, C, BC558B, C
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
−−−
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
SEATING
PLANE
K
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
−−−
0.205
0.210
0.165
0.021
0.055
0.105
0.020
−−−
D
X X
G
K
L
J
H
V
−−−
−−−
N
P
R
V
0.105
0.100
−−−
2.66
2.54
−−−
C
0.115
0.135
2.93
3.43
SECTION X−X
−−−
−−−
1
N
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
BC556B/D
相关型号：
BC557B{AMMOPAK}
Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
DIODES
©2020 ICPDF网 联系我们和版权申明