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BC557BTA [ONSEMI]

50 V, 100 mA PNP Bipolar Junction Epitaxial Silicon Transistor, 2000-FNFLD;
BC557BTA
型号： BC557BTA
厂家： ONSEMI    ONSEMI
描述：

50 V, 100 mA PNP Bipolar Junction Epitaxial Silicon Transistor, 2000-FNFLD

晶体 放大器 晶体管 开关 PC
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BC556B, BC557, A, B, C,  
BC558B, C  
Amplifier Transistors  
PNP Silicon  
http://onsemi.com  
COLLECTOR  
MAXIMUM RATINGS  
1
Rating  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
V
Vdc  
2
CEO  
1
BC556  
BC557  
BC558  
–65  
–45  
–30  
BASE  
2
3
3
CASE 29  
TO–92  
Collector-Base Voltage  
Emitter-Base Voltage  
V
Vdc  
CBO  
EBO  
EMITTER  
BC556  
BC557  
BC558  
–80  
–50  
–30  
STYLE 17  
ORDERING INFORMATION  
V
–5.0  
Vdc  
Device  
Package  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
Shipping  
Collector Current – Continuous  
Collector Current – Peak  
I
–100  
–200  
mAdc  
C
I
CM  
BC556B  
5000 Units/Box  
2000/Tape & Reel  
2000/Ammo Pack  
5000 Units/Box  
Base Current – Peak  
I
–200  
mAdc  
BM  
BC556BRL1  
BC556BZL1  
BC557  
Total Device Dissipation  
P
D
D
@ T = 25°C  
625  
5.0  
mW  
mW/°C  
A
Derate above 25°C  
Total Device Dissipation  
P
@ T = 25°C  
1.5  
12  
Watts  
mW/°C  
BC557ZL1  
2000/Ammo Pack  
C
Derate above 25°C  
BC557A  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
5000 Units/Box  
2000/Ammo Pack  
5000 Units/Box  
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to  
+150  
°C  
J
stg  
BC557AZL1  
BC557B  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
BC557BRL1  
BC557BZL1  
BC557C  
2000/Tape & Reel  
2000/Ammo Pack  
5000 Units/Box  
Thermal Resistance,  
Junction to Ambient  
R
200  
°C/W  
θJA  
Thermal Resistance,  
Junction to Case  
R
83.3  
°C/W  
θJC  
BC557CZL1  
BC558B  
2000/Ammo Pack  
5000 Units/Box  
BC558BRL  
BC558BRL1  
BC558BZL1  
BC558C  
2000/Tape & Reel  
2000/Tape & Reel  
2000/Ammo Pack  
5000 Units/Box  
BC558CRL1  
BC558ZL1  
BC558CZL1  
2000/Tape & Reel  
2000/Ammo Pack  
2000/Ammo Pack  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
June, 2000 – Rev. 1  
BC556/D  
BC556B, BC557, A, B, C, BC558B, C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I = –2.0 mAdc, I = 0)  
V
V
(BR)CEO  
BC556  
BC557  
BC558  
–65  
–45  
–30  
–
–
–
–
–
–
C
B
Collector–Base Breakdown Voltage  
(I = –100 µAdc)  
C
V
V
V
(BR)CBO  
BC556  
BC557  
BC558  
–80  
–50  
–30  
–
–
–
–
–
–
Emitter–Base Breakdown Voltage  
V
(BR)EBO  
(I = –100 mAdc, I = 0)  
BC556  
BC557  
BC558  
–5.0  
–5.0  
–5.0  
–
–
–
–
–
–
E
C
Collector–Emitter Leakage Current  
I
CES  
(V  
CES  
(V  
CES  
= –40 V)  
= –20 V)  
BC556  
BC557  
BC558  
BC556  
BC557  
BC558  
–
–
–
–
–
–
–2.0  
–2.0  
–2.0  
–
–
–
–100  
–100  
–100  
–4.0  
–4.0  
–4.0  
nA  
(V  
CES  
= –20 V, T = 125°C)  
µA  
A
http://onsemi.com  
2
BC556B, BC557, A, B, C, BC558B, C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
ON CHARACTERISTICS  
DC Current Gain  
(I = –10 µAdc, V  
C CE  
h
FE  
–
= –5.0 V)  
A Series Device  
B Series Devices  
C Series Devices  
BC557  
A Series Device  
B Series Devices  
C Series Devices  
A Series Device  
B Series Devices  
C Series Devices  
–
–
–
120  
120  
180  
420  
–
90  
–
–
–
800  
220  
460  
800  
–
150  
270  
–
170  
290  
500  
120  
180  
300  
(I = –2.0 mAdc, V  
C
= –5.0 V)  
= –5.0 V)  
CE  
(I = –100 mAdc, V  
C CE  
–
–
–
–
Collector–Emitter Saturation Voltage  
(I = –10 mAdc, I = –0.5 mAdc)  
V
V
V
CE(sat)  
–
–
–
–0.075  
–0.3  
–0.25  
–0.3  
–0.6  
–0.65  
C
B
(I = –10 mAdc, I = see Note 1)  
C
C
B
B
(I = –100 mAdc, I = –5.0 mAdc)  
Base–Emitter Saturation Voltage  
(I = –10 mAdc, I = –0.5 mAdc)  
V
V
BE(sat)  
–
–
–0.7  
–1.0  
–
–
C
C
B
B
(I = –100 mAdc, I = –5.0 mAdc)  
Base–Emitter On Voltage  
V
BE(on)  
(I = –2.0 mAdc, V  
(I = –10 mAdc, V  
C
= –5.0 Vdc)  
CE  
= –5.0 Vdc)  
CE  
–0.55  
–
–0.62  
–0.7  
–0.7  
–0.82  
C
SMALL–SIGNAL CHARACTERISTICS  
Current–Gain – Bandwidth Product  
f
T
MHz  
(I = –10 mA, V  
CE  
= –5.0 V, f = 100 MHz)  
BC556  
BC557  
BC558  
–
–
–
280  
320  
360  
–
–
–
C
Output Capacitance  
(V = –10 V, I = 0, f = 1.0 MHz)  
C
–
3.0  
6.0  
pF  
dB  
ob  
CB  
Noise Figure  
(I = –0.2 mAdc, V  
C
NF  
= –5.0 V,  
CE  
= 2.0 kW, f = 1.0 kHz, ∆f = 200 Hz)  
BC556  
BC557  
BC558  
–
–
–
2.0  
2.0  
2.0  
10  
10  
10  
C
R
S
Small–Signal Current Gain  
(I = –2.0 mAdc, V = 5.0 V, f = 1.0 kHz)  
h
fe  
–
BC557  
125  
125  
240  
450  
–
–
–
–
900  
260  
500  
900  
C
CE  
A Series Device  
B Series Devices  
C Series Devices  
Note 1: I = –10 mAdc on the constant base current characteristics, which yields the point I = –11 mAdc, V  
CE  
= –1.0 V.  
C
C
http://onsemi.com  
3
BC556B, BC557, A, B, C, BC558B, C  
BC557/BC558  
2.0  
1.5  
-1.0  
T
A
= 25°C  
-0.9  
-0.8  
-0.7  
-0.6  
-0.5  
-0.4  
-0.3  
-0.2  
-0.1  
0
V
T
= -10 V  
CE  
= 25°C  
V
@ I /I = 10  
C B  
BE(sat)  
A
1.0  
0.7  
0.5  
V
@ V = -10 V  
CE  
BE(on)  
0.3  
0.2  
V
@ I /I = 10  
C B  
CE(sat)  
-0.2  
-0.5 -1.0 -2.0  
-5.0 -10 -20  
-50 -100 -200  
-0.1  
-1.0  
-10  
-100  
-50  
-0.2  
-0.5  
-2.0  
-5.0  
-20  
I , COLLECTOR CURRENT (mAdc)  
C
I , COLLECTOR CURRENT (mAdc)  
C
Figure 1. Normalized DC Current Gain  
Figure 2. “Saturation” and “On” Voltages  
1.0  
1.2  
1.6  
2.0  
2.4  
2.8  
-2.0  
-1.6  
-1.2  
-0.8  
-0.4  
0
-55°C to +125°C  
T
A
= 25°C  
I
=
I
= -50 mA  
I
C
= -200 mA  
C
-10 mA  
C
I
C
= -100 mA  
I
= -20 mA  
C
-0.02  
-0.1  
-1.0  
-10 -20  
-0.2  
-1.0  
-10  
-100  
I , BASE CURRENT (mA)  
B
I , COLLECTOR CURRENT (mA)  
C
Figure 3. Collector Saturation Region  
Figure 4. Base–Emitter Temperature Coefficient  
10  
7.0  
5.0  
400  
300  
C
ib  
T
A
= 25°C  
200  
150  
V
= -10 V  
CE  
= 25°C  
T
A
100  
80  
C
ob  
3.0  
2.0  
60  
40  
30  
1.0  
-0.4  
20  
-0.5  
-0.6 -1.0  
-2.0  
-4.0 -6.0  
-10  
-20 -30 -40  
-1.0  
-2.0 -3.0 -5.0  
-10  
-20 -30 -50  
V , REVERSE VOLTAGE (VOLTS)  
R
I , COLLECTOR CURRENT (mAdc)  
C
Figure 5. Capacitances  
Figure 6. Current–Gain – Bandwidth Product  
http://onsemi.com  
4
BC556B, BC557, A, B, C, BC558B, C  
BC556  
-1.0  
T
= 25°C  
J
V
= -5.0 V  
CE  
= 25°C  
-0.8  
-0.6  
T
A
V
@ I /I = 10  
C B  
BE(sat)  
2.0  
1.0  
0.5  
V
@ V = -5.0 V  
CE  
BE  
-0.4  
-0.2  
0
0.2  
V
@ I /I = 10  
C B  
CE(sat)  
-0.1 -0.2  
-1.0 -2.0  
-10 -20  
-100 -200  
-50  
-0.2 -0.5 -1.0 -2.0  
-5.0 -10 -20  
-50 -100 -200  
-5.0  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 7. DC Current Gain  
Figure 8. “On” Voltage  
-2.0  
-1.6  
-1.2  
-0.8  
-0.4  
0
-1.0  
-1.4  
-1.8  
-2.2  
-2.6  
-3.0  
-100 mA -200 mA  
I
=
-20 mA  
-50 mA  
C
-10 mA  
θ
for V  
BE  
VB  
-55°C to 125°C  
T
= 25°C  
J
-0.02 -0.05 -0.1 -0.2  
-0.5 -1.0 -2.0  
-5.0 -10 -20  
-0.2 -0.5 -1.0 -2.0  
-5.0 -10 -20  
-50 -100 -200  
I , BASE CURRENT (mA)  
B
I , COLLECTOR CURRENT (mA)  
C
Figure 9. Collector Saturation Region  
Figure 10. Base–Emitter Temperature Coefficient  
40  
20  
V
CE  
= -5.0 V  
500  
T
= 25°C  
J
C
ib  
200  
100  
50  
10  
8.0  
6.0  
4.0  
C
ob  
20  
2.0  
-0.1 -0.2  
-0.5 -1.0 -2.0  
-5.0 -10 -20  
-50 -100  
-1.0  
-10  
-100  
V , REVERSE VOLTAGE (VOLTS)  
R
I , COLLECTOR CURRENT (mA)  
C
Figure 11. Capacitance  
Figure 12. Current–Gain – Bandwidth Product  
http://onsemi.com  
5
BC556B, BC557, A, B, C, BC558B, C  
1.0  
0.7  
0.5  
D = 0.5  
0.2  
0.3  
0.2  
SINGLE PULSE  
0.05  
Z
R
Z
(t) = (t) R  
q
JC  
q
JC  
0.1  
= 83.35C/W MAX  
q
JC  
JA  
(t) = r(t) R  
q
JA  
0.1  
0.07  
0.05  
q
P
(pk)  
R
= 2005C/W MAX  
q
JA  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
SINGLE PULSE  
READ TIME AT t  
1
t
1
T
– T = P  
R (t)  
q
JC  
J(pk)  
C
(pk)  
t
0.03  
0.02  
2
DUTY CYCLE, D = t /t  
1 2  
0.01  
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
100  
200  
500  
1.0Ăk  
2.0Ăk  
5.0Ăk  
10Ă  
t, TIME (ms)  
Figure 13. Thermal Response  
-200  
1 s  
3 ms  
-100  
-50  
The safe operating area curves indicate I –V  
limits of the  
C
CE  
transistor that must be observed for reliable operation. Collector  
load lines for specific circuits must fall below the limits indicated by  
the applicable curve.  
T
= 25°C  
T
A
= 25°C  
J
The data of Figure 14 is based upon T  
= 150°C; T or T is  
J(pk)  
C A  
BC558  
BC557  
BC556  
variable depending upon conditions. Pulse curves are valid for  
duty cycles to 10% provided T ≤ 150°C. T may be  
J(pk)  
J(pk)  
-10  
calculated from the data in Figure 13. At high case or ambient  
temperatures, thermal limitations will reduce the power than can  
be handled to values less than the limitations imposed by second  
breakdown.  
-5.0  
BONDING WIRE LIMIT  
THERMAL LIMIT  
SECOND BREAKDOWN LIMIT  
-2.0  
-1.0  
-5.0  
-10  
-30 -45 -65 -100  
V , COLLECTOR-EMITTER VOLTAGE (V)  
CE  
Figure 14. Active Region – Safe Operating Area  
http://onsemi.com  
6
BC556B, BC557, A, B, C, BC558B, C  
PACKAGE DIMENSIONS  
TO–92  
(TO–226)  
CASE 29–11  
ISSUE AL  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
A
B
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
4. LEAD DIMENSION IS UNCONTROLLED IN P AND  
BEYOND DIMENSION K MINIMUM.  
R
P
L
INCHES  
DIM MIN MAX  
MILLIMETERS  
SEATING  
PLANE  
K
MIN  
4.45  
4.32  
3.18  
0.407  
1.15  
2.42  
0.39  
12.70  
6.35  
2.04  
---  
MAX  
5.20  
5.33  
4.19  
0.533  
1.39  
2.66  
0.50  
---  
A
B
C
D
G
H
J
0.175  
0.170  
0.125  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
---  
0.205  
0.210  
0.165  
0.021  
0.055  
0.105  
0.020  
---  
D
X X  
G
J
H
V
K
L
---  
---  
C
N
P
R
V
0.105  
0.100  
---  
2.66  
2.54  
---  
SECTION X–X  
0.115  
0.135  
2.93  
3.43  
1
N
---  
---  
N
STYLE 17:  
PIN 1. COLLECTOR  
2. BASE  
3. EMITTER  
http://onsemi.com  
7
BC556B, BC557, A, B, C, BC558B, C  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,  
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or  
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold  
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable  
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
Literature Fulfillment:  
JAPAN: ON Semiconductor, Japan Customer Focus Center  
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031  
Phone: 81–3–5740–2700  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada  
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada  
Email: ONlit@hibbertco.com  
Email: r14525@onsemi.com  
ON Semiconductor Website: http://onsemi.com  
For additional information, please contact your local  
Sales Representative.  
N. American Technical Support: 800–282–9855 Toll Free USA/Canada  
BC556/D  

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