BC517RLRP [ONSEMI]
1000mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN;
| 型号： | BC517RLRP |
| 厂家： | 
ONSEMI |
| 描述： | 1000mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN 晶体管 |
| 文件： | 总6页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC517
Darlington Transistors
NPN Silicon
Features
http://onsemi.com
• These are Pb−Free Devices*
COLLECTOR 1
MAXIMUM RATINGS
BASE
2
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
30
Unit
Vdc
Vdc
Vdc
Adc
V
CES
V
CB
40
EMITTER 3
V
EB
10
Collector Current − Continuous
I
C
1.0
Total Power Dissipation @ T = 25°C
P
625
12
mW
A
D
TO−92
CASE 29
STYLE 17
Derate above T = 25°C
mW/°C
A
Total Power Dissipation @ T = 25°C
P
D
1.5
12
W
mW/°C
C
Derate above T = 25°C
C
1
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
1
2
2
3
3
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
R
q
JA
R
83.3
MARKING DIAGRAM
q
JC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BC
517
AYWW G
G
A
Y
= Assembly Location
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
BC517G
Package
Shipping
TO−92
(Pb−Free)
5000 Units / Bulk
2000 / Tape & Reel
2000 / Ammo Pack
BC517RL1G
BC517ZL1G
TO−92
(Pb−Free)
TO−92
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
September, 2011 − Rev. 5
BC517/D
BC517
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Collector−Emitter Breakdown Voltage
V
Vdc
Vdc
(BR)CES
(BR)CBO
(BR)EBO
(I = 2.0 mAdc, I = 0)
30
40
10
−
−
−
−
−
−
−
−
−
C
BE
Collector−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = 100 mAdc, I = 0)
Vdc
−
E
C
Collector Cutoff Current
I
nAdc
nAdc
nAdc
CES
(V = 30 Vdc)
500
100
100
CE
Collector Cutoff Current
I
CBO
(V = 30 Vdc, I = 0)
−
CB
E
Emitter Cutoff Current
(V = 10 Vdc, I = 0)
I
EBO
−
CB
C
ON CHARACTERISTICS (Note 1)
DC Current Gain
h
−
FE
(I = 20 mAdc, V = 2.0 Vdc)
30,000
−
−
−
−
C
CE
Collector−Emitter Saturation Voltage
(I = 100 mAdc, I = 0.1 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
1.0
1.4
C
B
Collector−Emitter Saturation Voltage
(I = 10 mAdc, V = 5.0 Vdc)
V
BE(on)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
f
T
MHz
(I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz)
−
200
−
C
CE
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
2. f = |h | • f
T
fe
test
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2
BC517
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
500
2.0
BANDWIDTH = 1.0 Hz
R ≈ 0
BANDWIDTH = 1.0 Hz
S
1.0
0.7
0.5
200
100
50
I = 1.0 mA
C
0.3
0.2
10 mA
100 mA
I = 1.0 mA
100 mA
0.1
0.07
0.05
20
10 mA
C
10
0.03
0.02
5.0
10 20
50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
f, FREQUENCY (Hz)
10 20
50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
f, FREQUENCY (Hz)
Figure 2. Noise Voltage
Figure 3. Noise Current
200
14
12
BANDWIDTH = 10 Hz TO 15.7 kHz
BANDWIDTH = 10 Hz TO 15.7 kHz
100
70
10
8.0
6.0
4.0
2.0
I = 10 mA
C
10 mA
50
100 mA
100 mA
30
20
I = 1.0 mA
C
1.0 mA
10
0
1.0
1.0 2.0
5.0
10
20
50 100 200
500 1000
2.0
5.0
10
20
50 100 200
500 1000
R , SOURCE RESISTANCE (kW)
S
R , SOURCE RESISTANCE (kW)
S
Figure 4. Total Wideband Noise Voltage
Figure 5. Wideband Noise Figure
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3
BC517
SMALL−SIGNAL CHARACTERISTICS
20
10
4.0
V
= 5.0 V
CE
f = 100 MHz
T = 25°C
J
T = 25°C
J
2.0
7.0
5.0
C
ibo
1.0
0.8
C
obo
0.6
0.4
3.0
2.0
0.2
0.04
0.1 0.2
0.4
1.0 2.0 4.0
10 20
40
0.5 1.0
2.0
0.5 10 20
50
100 200
500
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 6. Capacitance
Figure 7. High Frequency Current Gain
200ꢀk
3.0
2.5
2.0
1.5
1.0
0.5
T = 125°C
J
T = 25°C
J
100ꢀk
70ꢀk
50ꢀk
I =
C
50 mA
250 mA 500 mA
10 mA
25°C
30ꢀk
20ꢀk
10ꢀk
7.0ꢀk
5.0ꢀk
-ꢁ55°C
V
CE
= 5.0 V
3.0ꢀk
2.0ꢀk
500
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
5.0 7.0 10
20 30
50 70 100
200 300
I , COLLECTOR CURRENT (mA)
C
I , BASE CURRENT (mA)
B
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
1.6
1.4
-ꢁ1.0
-ꢁ2.0
-ꢁ3.0
-ꢁ4.0
-ꢁ5.0
-ꢁ6.0
*APPLIES FOR I /I ≤ h /3.0
C
B
FE
25°C TO 125°C
T = 25°C
J
*R
FOR V
CE(sat)
q
VC
V
@ I /I = 1000
-ꢁ55°C TO 25°C
25°C TO 125°C
BE(sat)
C B
1.2
1.0
0.8
0.6
V
BE(on)
@ V = 5.0 V
CE
q
FOR V
BE
VB
-ꢁ55°C TO 25°C
V
@ I /I = 1000
C B
CE(sat)
5.0 7.0
10
20 30
50 70 100 200 300
500
5.0 7.0 10
20 30
50 70 100
200 300 500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
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4
BC517
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
SINGLE PULSE
0.05
0.1
0.1
0.07
SINGLE PULSE
0.05
0.03
0.02
Z
Z
= r(t) • R ꢂT
- T = P
Z
q
q
q
q
JC(t)
JA(t)
JC
J(pk)
C
(pk) JC(t)
= r(t) • R ꢂT
- T = P
Z
q
q
JA
J(pk)
A
(pk) JA(t)
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0ꢀk
2.0ꢀk
5.0ꢀk
10ꢀk
t, TIME (ms)
Figure 12. Thermal Response
1.0ꢀk
700
FIGURE A
1.0 ms
500
t
P
T = 25°C
C
300
200
100 ms
T = 25°C
A
P
P
P
P
1.0 s
100
70
50
t
1
30
20
CURRENT LIMIT
THERMAL LIMIT
1/f
SECOND BREAKDOWN LIMIT
t
1
DUTYꢀCYCLE + t ꢀf +
10
0.4 0.6
1
t
P
40
1.0
2.0
4.0 6.0
10
20
PEAK PULSE POWER = P
P
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data
http://onsemi.com
5
BC517
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
A
STRAIGHT LEAD
BULK PACK
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
---
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
---
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
---
0.205
0.210
0.165
0.021
0.055
0.105
0.020
---
D
X X
G
J
H
V
K
L
---
---
N
P
R
V
0.105
0.100
---
2.66
2.54
---
C
SECTION X−X
0.115
0.135
2.93
3.43
1
N
---
---
N
NOTES:
A
BENT LEAD
TAPE & REEL
AMMO PACK
B
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
R
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
P
T
SEATING
PLANE
MILLIMETERS
K
DIM MIN
MAX
5.20
5.33
4.19
0.54
2.80
0.50
---
A
B
C
D
G
J
4.45
4.32
3.18
0.40
2.40
0.39
12.70
2.04
1.50
2.93
3.43
D
X X
G
K
N
P
R
V
J
2.66
4.00
---
V
C
---
SECTION X−X
1
N
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BC517/D
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