BC368ZL1 [ONSEMI]
Amplifier Transistors; 放大器晶体管
| 型号： | BC368ZL1 |
| 厂家： | 
ONSEMI |
| 描述： | Amplifier Transistors |
| 文件： | 总4页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC368 (NPN), BC369 (PNP)
Amplifier Transistors
Voltage and Current are Negative
for PNP Transistors
Features
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• Pb−Free Packages are Available*
COLLECTOR
2
COLLECTOR
2
3
3
BASE
BASE
MAXIMUM RATINGS
NPN
EMITTER
PNP
Rating
Symbol
Value
20
Unit
Vdc
Vdc
Vdc
Adc
mW
1
1
EMITTER
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
V
CEO
V
CES
V
EBO
25
MARKING
DIAGRAM
5.0
Collector Current − Continuous
Total Device Dissipation
I
C
1.0
P
P
625
CASE 29
TO−92
STYLE 14
BC
36x
YWW
D
@ T = 25°C
A
Derate above 25°C
5.0
1.5
mW/°C
1
Total Device Dissipation
Watt
D
2
@ T = 25°C
3
C
Derate above 25°C
12
mW/°C
°C
BC36x = Specific Device Code
Operating and Storage Junction
Temperature Range
T , T
−55 to
+150
J
stg
x
Y
= 8 or 9
= Year
WW = Work Week
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
ORDERING INFORMATION
THERMAL CHARACTERISTICS
†
Device
Package
TO−92
Shipping
Characteristic
Symbol
Max
Unit
BC368
5000 Units/Box
Thermal Resistance,
R
200
°C/W
q
JA
Junction−to−Ambient
BC368ZL1
TO−92
2000/Ammo Pack
2000/Ammo Pack
Thermal Resistance,
Junction−to−Case
R
83.3
°C/W
q
JC
BC368ZL1G
TO−92
(Pb−Free)
BC369
TO−92
TO−92
5000 Units/Box
2000/Ammo Pack
2000/Ammo Pack
BC369ZL1
BC369ZL1G
TO−92
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
May, 2004 − Rev. 4
BC368/D
BC368 (NPN), BC369 (PNP)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I = 10 mA, I = 0)
V
20
25
−
−
−
−
−
−
Vdc
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
C
B
Collector−Base Breakdown Voltage
(I = 100 mA, I = 0 )
V
V
C
E
Emitter−Base Breakdown Voltage
(I = 100 mA, I = 0)
5.0
E
C
Collector Cutoff Current
(V = 25 V, I = 0)
I
CBO
−
−
−
−
10
1.0
mAdc
mAdc
CB
E
(V = 25 V, I = 0, T = 150°C)
CB
E
J
Emitter Cutoff Current
(V = 5.0 V, I = 0)
I
−
−
10
mAdc
EBO
EB
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(V = 10 V, I = 5.0 mA)
50
85
170
60
−
−
−
−
−
CE
C
(V = 1.0 V, I = 0.5 A)
BC368, 369
BC368−25
375
375
−
CE
C
(V = 1.0 V, I = 1.0 A)
CE
C
Bandwidth Product (I = 10 mA, V = 5.0 V, f = 20 MHz)
f
T
65
−
−
−
−
−
MHz
V
C
CE
Collector−Emitter Saturation Voltage (I = 1.0 A, I = 100 mA)
V
CE(sat)
0.5
1.0
C
B
Base−Emitter On Voltage (I = 1.0 A, V = 1.0 V)
V
BE(on)
−
V
C
CE
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2
BC368 (NPN), BC369 (PNP)
200
100
1.0
0.8
T = 25°C
J
0.6
70
50
50 mA
100 mA
0.4
0.2
0
V
= 1.0 V
CE
T = 25°C
J
1000 mA
500 mA
I
C
= 10 mA
250 mA
20
10
20
50
100
200
500
1000
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 2. Collector Saturation Region
Figure 1. DC Current Gain
−0.8
−1.2
−1.6
−2.0
−2.4
−2.8
1.0
0.8
V
@ I /I = 10
C B
BE(sat)
T = 25°C
J
V
BE(on)
@ V = 1.0 V
CE
0.6
0.4
0.2
0
q
for V
BE
VB
V
@ I /I = 10
C B
CE(sat)
1.0 2.0 5.0 10 20
50 100 200 500 1000
1.0 2.0 5.0 10 20
50 100 200 500 1000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 4. Temperature Coefficient
Figure 3. “On” Voltages
300
200
160
120
80
T = 25°C
J
100
70
C
C
ibo
V
= 10 V
CE
T = 25°C
40
0
50
J
f = 20 MHz
obo
30
10
20
50
100
200
500
1000
C
5.0
1.0
10
15
20
25
obo
C
2.0
3.0
4.0
5.0
ibo
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 5. Current−Gain — Bandwidth Product
Figure 6. Capacitance
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3
BC368 (NPN), BC369 (PNP)
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
−−−
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
SEATING
PLANE
K
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
−−−
0.205
0.210
0.165
0.021
0.055
0.105
0.020
−−−
D
X X
G
K
L
J
H
V
−−−
−−−
N
P
R
V
0.105
0.100
−−−
2.66
2.54
−−−
C
0.115
0.135
2.93
3.43
SECTION X−X
−−−
−−−
1
N
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
local Sales Representative.
BC368/D
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