BAV99WT3G [ONSEMI]
100 V 开关二极管，双，串联;
| 型号： | BAV99WT3G |
| 厂家： | 
ONSEMI |
| 描述： | 100 V 开关二极管，双，串联 开关 二极管 |
| 文件： | 总4页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV99WT1,
SBAV99WT1G,
BAV99RWT1,
SBAV99RWT1G
Dual Series Switching
Diodes
http://onsemi.com
The BAV99WT1 is a smaller package, equivalent to the BAV99LT1.
Features
SC−70
• These Devices are Pb−Free and are RoHS Compliant
CASE 419
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q100 Qualified and
PPAP Capable
ANODE
1
CATHODE
2
3
Suggested Applications
CATHODE/ANODE
• ESD Protection
BAV99WT1
• Polarity Reversal Protection
• Data Line Protection
• Inductive Load Protection
• Steering Logic
SC−70, CASE 419, STYLE 9
CATHODE ANODE
1
2
3
CATHODE/ANODE
BAV99RWT1
SC−70, CASE 419, STYLE 10
MAXIMUM RATINGS (Each Diode)
Rating
Symbol
Value
100
215
500
70
Unit
Vdc
mAdc
mAdc
V
MARKING DIAGRAM
Reverse Voltage
Forward Current
V
R
I
F
A7
F7
M
= BAV99WT1
= BAV99RWT1
= Date Code
X7 MG
Peak Forward Surge Current
I
FM(surge)
G
Repetitive Peak Reverse Voltage
V
RRM
G
= Pb−Free Package
1
Average Rectified Forward Current
(Note 1)
(averaged over any 20 ms period)
I
715
mA
F(AV)
ORDERING INFORMATION
Repetitive Peak Forward Current
I
450
mA
A
FRM
†
Device
Package
Shipping
Non−Repetitive Peak Forward Current
I
FSM
BAV99WT1G
SC−70
(Pb−Free)
3,000 / Tape & Reel
t = 1.0 ms
t = 1.0 ms
t = 1.0 s
2.0
1.0
0.5
SBAV99WT1G
BAV99RWT1G
SBAV99RWT1G
SC−70
(Pb−Free)
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
SC−70
(Pb−Free)
SC−70
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
May, 2013 − Rev. 7
BAV99WT1/D
BAV99WT1, SBAV99WT1G, BAV99RWT1, SBAV99RWT1G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board, (Note 1) T = 25°C
P
D
200
1.6
mW
mW/°C
A
Derate above 25°C
Thermal Resistance Junction−to−Ambient
R
625
°C/W
q
JA
Total Device Dissipation Alumina Substrate, (Note 2) T = 25°C
P
D
300
2.4
mW
mW/°C
A
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
T , T
J
−65 to +150
stg
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Each Diode)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
V
(BR)
Vdc
(I
= 100 mA)
100
−
(BR)
Reverse Voltage Leakage Current
(V = 100 Vdc)
I
R
mAdc
−
−
−
2.5
30
50
R
(V = 25 Vdc, T = 150°C)
R
J
(V = 70 Vdc, T = 150°C)
R
J
Diode Capacitance
C
V
pF
D
(V = 0, f = 1.0 MHz)
−
1.5
R
Forward Voltage
mVdc
F
(I = 1.0 mAdc)
−
−
−
−
715
855
1000
1250
F
(I = 10 mAdc)
F
(I = 50 mAdc)
F
(I = 150 mAdc)
F
Reverse Recovery Time
t
ns
V
rr
(I = I = 10 mAdc, i
= 1.0 mAdc) (Figure 1) R = 100 W
−
−
6.0
F
R
R(REC)
L
Forward Recovery Voltage
(I = 10 mA, t = 20 ns)
V
FR
1.75
F
r
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
820 W
+10 V
2 k
0.1 mF
I
F
t
r
t
p
t
I
F
100 mH
0.1 mF
t
rr
t
10%
90%
DUT
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
i
= 1 mA
R(REC)
I
R
V
R
OUTPUT PULSE
INPUT SIGNAL
(I = I = 10 mA; measured
F
R
at i
= 1 mA)
R(REC)
Notes: (a) A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: (b) Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: (c) t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2
BAV99WT1, SBAV99WT1G, BAV99RWT1, SBAV99RWT1G
CURVES APPLICABLE TO EACH DIODE
1000
100
10
10
T = 150°C
A
T = 125°C
A
1.0
T = 85°C
A
0.1
T = 55°C
A
T = 150°C
A
T = 25°C T = -ꢂ55°C
A
A
1.0
0.01
T = 25°C
A
0.1
0.0
0.001
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
0.64
0.60
0.56
0.52
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Capacitance
http://onsemi.com
3
BAV99WT1, SBAV99WT1G, BAV99RWT1, SBAV99RWT1G
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
MILLIMETERS
INCHES
3
DIM
A
A1
A2
b
c
D
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
MAX
0.040
0.004
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
E
e
e
0.65 BSC
0.38
2.10
0.026 BSC
0.015
0.083
e1
L
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
H
E
c
A
A2
STYLE 9:
STYLE 10:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
PIN 1. CATHODE
2. ANODE
3. ANODE-CATHODE
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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BAV99WT1/D
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