BAV99LT1 [ONSEMI]

Monolithic Dual Switching Diode; 单片双开关二极管
BAV99LT1
型号: BAV99LT1
厂家: ONSEMI    ONSEMI
描述:

Monolithic Dual Switching Diode
单片双开关二极管

整流二极管 开关 光电二极管
文件: 总4页 (文件大小:47K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAV99LT1  
Preferred Device  
Dual Series  
Switching Diode  
Features  
Pb−Free Packages are Available  
http://onsemi.com  
ANODE  
CATHODE  
2
MAXIMUM RATINGS (Each Diode)  
Rating  
1
Symbol  
Value  
70  
Unit  
Vdc  
mAdc  
mAdc  
V
3
Reverse Voltage  
V
R
CATHODE/ANODE  
Forward Current  
I
F
215  
500  
70  
Peak Forward Surge Current  
Repetitive Peak Reverse Voltage  
I
FM(surge)  
V
RRM  
Average Rectified Forward Current (Note 1)  
(averaged over any 20 ms period)  
I
715  
mA  
F(AV)  
3
CASE 318  
SOT−23  
STYLE 11  
Repetitive Peak Forward Current  
I
450  
mA  
A
1
FRM  
2
Non−Repetitive Peak Forward Current  
I
FSM  
2.0  
1.0  
0.5  
t = 1.0 ms  
t = 1.0 ms  
t = 1.0 s  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
MARKING DIAGRAM  
THERMAL CHARACTERISTICS  
A7 M  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
D
225  
mW  
FR5 Board (Note 1) T = 25°C  
Derate above 25°C  
A
1.8  
mW/°C  
A7 = Device Code  
M = Date Code  
Thermal Resistance, Junction−to−Ambient  
R
556  
300  
°C/W  
q
JA  
Total Device Dissipation  
P
mW  
D
Alumina Substrate (Note 2)  
ORDERING INFORMATION  
T = 25°C  
A
2.4  
mW/°C  
Derate above 25°C  
Device  
Package  
Shipping  
Thermal Resistance, Junction−to−Ambient  
R
417  
°C/W  
°C  
q
JA  
BAV99LT1  
SOT−23  
3000/Tape & Reel  
3000/Tape & Reel  
Junction and Storage  
Temperature Range  
T , T  
J
65 to  
+150  
stg  
BAV99LT1G  
SOT−23  
(Pb−Free)  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.  
BAV99LT3  
SOT−23  
10,000/Tape & Reel  
10,000/Tape & Reel  
BAV99LT3G  
SOT−23  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
September, 2004 − Rev. 3  
BAV99LT1/D  
 
BAV99LT1  
OFF CHARACTERISTICS (T = 25°C unless otherwise noted) (Each Diode)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
Reverse Breakdown Voltage,  
V
(BR)  
70  
Vdc  
(I  
(BR)  
= 100 mA)  
Reverse Voltage Leakage Current,  
(V = 70 Vdc)  
I
R
2.5  
30  
50  
mAdc  
R
(V = 25 Vdc, T = 150°C)  
R
J
(V = 70 Vdc, T = 150°C)  
R
J
Diode Capacitance,  
Forward Voltage,  
C
1.5  
pF  
(V = 0, f = 1.0 MHz)  
D
R
V
715  
855  
1000  
1250  
mVdc  
(I = 1.0 mAdc)  
F
F
(I = 10 mAdc)  
F
(I = 50 mAdc)  
F
(I = 150 mAdc)  
F
Reverse Recovery Time,  
Forward Recovery Voltage,  
t
6.0  
ns  
V
(I = I = 10 mAdc, i  
= 1.0 mAdc) R = 100 W  
rr  
F
R
R(REC)  
L
V
FR  
1.75  
(I = 10 mA, t = 20 ns)  
F
r
http://onsemi.com  
2
BAV99LT1  
CURVES APPLICABLE TO EACH DIODE  
100  
10  
10  
T = 150°C  
A
T = 125°C  
A
1.0  
0.1  
T = 85°C  
A
T = 85°C  
A
T = 25°C  
A
1.0  
0.1  
T = 55°C  
A
0.01  
T = −ꢂ40°C  
A
T = 25°C  
A
0.001  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
10  
20  
30  
40  
50  
V , FORWARD VOLTAGE (VOLTS)  
F
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 1. Forward Voltage  
Figure 2. Leakage Current  
0.68  
0.64  
0.60  
0.56  
0.52  
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 3. Capacitance  
http://onsemi.com  
3
BAV99LT1  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
PLASTIC PACKAGE  
CASE 318−08  
ISSUE AK  
NOTES:  
A
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
L
2. CONTROLLING DIMENSION: INCH.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD  
THICKNESS IS THE MINIMUM THICKNESS OF  
BASE MATERIAL.  
3
S
C
B
1
2
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW  
STANDARD 318−08.  
V
G
INCHES  
MIN  
MILLIMETERS  
DIM  
A
B
C
D
G
H
J
MAX  
0.1197  
0.0551  
0.0440  
0.0200  
0.0807  
0.0040  
0.0070  
0.0285  
0.0401  
0.1039  
0.0236  
MIN  
2.80  
1.20  
0.89  
0.37  
1.78  
0.013  
0.085  
0.35  
0.89  
2.10  
0.45  
MAX  
3.04  
1.40  
1.11  
0.50  
2.04  
0.100  
0.177  
0.69  
1.02  
2.64  
0.60  
0.1102  
0.0472  
0.0350  
0.0150  
0.0701  
0.0005  
0.0034  
0.0140  
0.0350  
0.0830  
0.0177  
H
J
D
K
K
L
S
V
STYLE 11:  
PIN 1. ANODE  
2. CATHODE  
3. CATHODE−ANODE  
SOLDERING FOOTPRINT*  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
0.8  
0.031  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
BAV99LT1/D  

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