BAT54CLT1 [ONSEMI]
Dual Series Schottky Barrier Diodes; 双肖特基势垒二极管
| 型号： | BAT54CLT1 |
| 厂家： | 
ONSEMI |
| 描述： | Dual Series Schottky Barrier Diodes |
| 文件： | 总4页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAT54CLT1
Preferred Device
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand−held and portable applications where
space is limited.
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30 VOLT
DUAL COMMON CATHODE
SCHOTTKY BARRIER DIODES
Features
• Pb−Free Package is Available
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 Volts (Typ) @ I = 10 mAdc
F
1
2
ANODE
ANODE
3
CATHODE
MAXIMUM RATINGS (T = 125°C unless otherwise noted)
J
MARKING
DIAGRAM
Rating
Reverse Voltage
Forward Power Dissipation
Symbol
Value
Unit
V
R
30
V
P
F
3
3
@ T = 25°C
225
1.8
mW
mW/°C
A
SOT−23
CASE 318
STYLE 9
Derate above 25°C
5C M
1
Thermal Resistance,
Junction-to-Ambient
R
508 (Note 1)
311 (Note 2)
°C/W
q
JA
2
1
2
Forward Current (DC)
Junction Temperature
I
200 Max
125 Max
mA
°C
F
5C
M
= Device Code
= Date Code
T
J
Storage Temperature Range
T
stg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
ORDERING INFORMATION
†
Device
Package
Shipping
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 inch Pad.
BAT54CLT1
SOT−23
3000/Tape & Reel
3000/Tape & Reel
BAT54CLT1G
SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
September, 2004 − Rev. 2
BAT54SLT1/D
BAT54CLT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)
A
Characteristic
Reverse Breakdown Voltage (I = 10 mA)
Symbol
Min
30
−
Typ
−
Max
−
Unit
V
V
(BR)R
R
Total Capacitance (V = 1.0 V, f = 1.0 MHz)
C
7.6
0.5
0.22
0.41
0.52
−
10
pF
R
T
Reverse Leakage (V = 25 V)
I
R
−
2.0
0.24
0.5
0.8
5.0
mAdc
Vdc
Vdc
Vdc
ns
R
Forward Voltage (I = 0.1 mAdc)
V
F
V
F
V
F
−
F
Forward Voltage (I = 30 mAdc)
−
F
Forward Voltage (I = 100 mAdc)
−
F
Reverse Recovery Time
t
rr
−
(I = I = 10 mAdc, I = 1.0 mAdc, Figure 1)
R(REC)
F
R
Forward Voltage (I = 1.0 mAdc)
V
V
−
−
−
−
−
0.29
0.35
−
0.32
0.40
200
300
600
Vdc
Vdc
F
F
Forward Voltage (I = 10 mAdc)
F
F
Forward Current (DC)
I
F
mAdc
mAdc
mAdc
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current (t < 1.0 s)
I
I
−
FRM
FSM
−
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2
BAT54CLT1
820 W
+10 V
2 k
0.1 mF
I
F
t
r
t
p
T
I
F
100 mH
t
T
10%
90%
rr
0.1 mF
DUT
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
i
= 1 mA
R(REC)
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; measured
INPUT SIGNAL
F
R
at i
= 1 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
100
1000
T = 150°C
A
125°C
85°C
100
10
T = 125°C
A
10
1.0
0.1
1.0
150°C
T = 85°C
A
0.1
0.01
25°C
−40°C
−55°C
T = 25°C
A
0.001
15
25
30
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
5
10
20
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 2. Forward Voltage
Figure 3. Leakage Current
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Total Capacitance
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3
BAT54CLT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
PLASTIC PACKAGE
CASE 318−08
ISSUE AJ
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
3
S
C
B
1
2
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
V
G
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
G
H
J
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
H
J
D
K
K
L
S
V
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
SOLDERING FOOTPRINT*
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
local Sales Representative.
BAT54CLT1/D
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