BAS31 [ONSEMI]
高压通用型二极管;
| 型号： | BAS31 |
| 厂家： | 
ONSEMI |
| 描述： | 高压通用型二极管 高压 光电二极管 |
| 文件： | 总5页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Small Signal Diode
BAS31
3
2
1
SOT−23
CASE 318BM
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
(Note 1, 2)
Symbol
Parameter
Ratings Unit
MARKING DIAGRAM
V
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
120
200
1.0
V
mA
A
3
RRM
I
F(AV)
L21M
I
Non−Repetitive Pulse Width = 1.0 second
Peak Forward
FSM
1
2
Pulse Width = 1.0 microsecond
2.0
Surge Current
L21 = Specific Device Code
= Date Code
M
T
Storage Temperature Range
−55 to
+150
°C
°C
STG
T
J
Operating Junction Temperature
150
CONNECTION DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
3
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady−state limits. onsemi should be consulted on applications
involving pulsed or low− duty−cycle operations.
1
2
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Ratings Unit
ORDERING INFORMATION
P
D
Power Dissipation
Thermal Resistance, Junction−to−Ambient
350
357
°C/W
†
Device
BAS31
Package
Reel
Shipping
R
q
JA
SOT−23 3L
(Pb−Free,
7”
3000 / Tape
& Reel
Halide Free)
BAS31−D87Z
13” 10000 / Tape
& Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Breakdown Voltage
Conditions
Min
120
−
Max
−
Unit
V
V
R
I = 1.0 mA
R
V
F
Forward Voltage
I = 10 mA
F
750
840
900
1.00
1.25
100
100
35
mV
mV
mV
V
I = 50 mA
F
−
I = 100 mA
F
−
I = 200 mA
F
−
I = 400 mA
F
−
V
I
R
Reverse Current
V
R
V
R
V
R
= 90 V
−
nA
mA
pF
ns
= 90 V, T = 150°C
−
A
C
Total Capacitance
= 0 V, f = 1.0 MHz
−
T
t
rr
Reverse Recovery Time
I = I = 30 mA, I = 3.0 mA, R = 100 W
−
50
F
R
RR
L
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
May, 2023 − Rev. 3
BAS31/D
BAS31
TYPICAL PERFORMANCE CHARACTERISTICS
325
300
275
50
Ta = 25°C
Ta = 25°C
40
30
20
10
0
3
5
10
20
30
50
100
255
10
55
75
95
115 135 155 175 195
I , REVERSE CURRENT (mA)
V , REVERSE VOLTAGE (V)
R
R
GENERAL RULE: The Reverse Current of a diode will approximately
Figure 1. Reverse Voltage vs. Reverse Current BV −
double for every ten (10) Degree C increase in Temperature
1.0 to 100 mA
Figure 2. Reverse Current vs. Reverse Voltage IR −
55 to 205 V
100
Ta = 25°C
Ta = 25°C
450
90
80
70
60
50
40
30
20
400
350
300
250
180
200
220
240
1
2
3
5
10
20 30
50
100
V , REVERSE VOLTAGE (V)
I , FORWARD CURRENT (mA)
F
R
GENERAL RULE: The Reverse Current of a diode will approximately
Figure 4. Forward Voltage vs. Forward Current VF −
double for every ten (10) Degree C increase in Temperature
1.0 to 100 mA
Figure 3. Reverse Current vs. Reverse Voltage IR −
180 to 255 V
725
1.4
Ta = 25°C
Ta = 25°C
700
650
600
550
500
450
1.3
1.2
1.1
1
0.9
0.8
0.7
0.1
0.2 0.3 0.5
1
2
3
5
10
20 30
50
100
200 300 500 800
I , FORWARD CURRENT (mA)
F
I , FORWARD CURRENT (mA)
F
Figure 5. Forward Voltage vs. Forward Current VF −
0.1 to 10 mA
Figure 6. Forward Voltage vs. Forward Current VF −
10 to 800 mA
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2
BAS31
TYPICAL PERFORMANCE CHARACTERISTICS (CONTINUED)
1.3
Ta = 25°C
800
600
400
Ta = −40°C
Ta = 25°C
1.2
1.1
1
Ta = +80°C
0.9
0.8
200
0.001 0.003 0.01 0.03
0.1
0.3
1
3
10
0
2
4
6
8
10
12
14 15
I , FORWARD CURRENT (mA)
F
REVERSE VOLTAGE (V)
Figure 7. Forward Voltage vs. Ambient Temperature
Figure 8. Capacitance vs. Reverse Voltage
VF − 1.0 mA − 10 mA (− 40 to +805C)
50
40
500
400
300
200
100
0
I
− FORWARD CURRENT
R
STEADY STATE − mA
30
Io − AVERAGE RECTIFIED
IF = IR = 30 mA
Rloop = 100 W
CURRENT − mA
20
1
1.5
2
2.5
3
0
50
100
150
Irr, REVERSE RECOVERY CURRENT (mA)
T , AMBIENT TEMPERATURE (°C)
A
Figure 9. Reverse Recovery Time vs.
Reverse Recovery Current (Irr)
Figure 10. Average Rectified Current (IO) and
Forward Current (IF) vs. Ambient Temperature (TA)
500
400
300
200
100
0
SOT−23 Pkg
0
50
100
150
200
I , AVERAGE TEMPERATURE (°C)
O
Figure 11. Power Derating Curve
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23
CASE 318BM
ISSUE A
DATE 01 SEP 2021
GENERIC
MARKING DIAGRAM*
XXXMG
G
1
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13784G
SOT−23
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2021
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